Abstract: Embodiments of the present disclosure include MEMS devices and methods for forming MEMS devices. An embodiment is a method for forming a microelectromechanical system (MEMS) device, the method including forming a MEMS wafer having a first cavity, the first cavity having a first pressure, and bonding a carrier wafer to a first side of the MEMS wafer, the bonding forming a second cavity, the second cavity having a second pressure, the second pressure being greater than the first pressure. The method further includes bonding a cap wafer to a second side of the MEMS wafer, the second side being opposite the first side, the bonding forming a third cavity, the third cavity having a third pressure, the third pressure being greater than the first pressure and less than the second pressure.

Abstract: A wireless network connection method for an electronic device is provided, in which a first signal is transmitted to additional electronic device and is utilized to identify the electronic device. When the additional electronic device identifies the electronic device through the first signal, it establishes wireless communication between the electronic device and the additional electronic device. A second signal is transmitted to the additional electronic device. The second signal is an audio signal to instruct the additional electronic device to maintain the wireless communication.

Abstract: A series of ladder-type multifused arenes (hexacyclic, heptacyclic and nonacyclic units) and the synthesizing methods thereof are provided. The ladder-type multifused arenes are copolymerized with various electron-deficient acceptor units to afford various p-type low-band gap conjugated copolymers.

Abstract: An image-partitioned display device for virtual image is disclosed. The display device comprises an image display unit, a refractive element, and a virtual image generation module. The refractive element is disposed between the image display unit and the virtual image generation module. Firstly, the image display unit generates at least one image, and then the refractive element refracts and partitions the image into a plurality of sub-images. Finally, the virtual image generation module receives lights of the sub-images to generate a large area virtual image or a plurality of enlarged virtual images. A volume of the virtual image generation module is reduced and all kinds of display information are provided by the image-partitioned technology.

Abstract: Provided is a method for fabricating a semiconductor device including the following steps. A silicon-containing conductive layer is formed on a substrate. Then, a dielectric layer is formed around the silicon-containing conductive layer. A portion of the dielectric layer is removed to expose a first sidewall of the silicon-containing conductive layer. A shielding structure is formed on a partial surface of the silicon-containing conductive layer, and the shielding structure exposes at least the first sidewall. A metal layer is formed on the substrate to cover the silicon-containing conductive layer not covered by the shielding structure. A salicide process is performed to form a silicide layer.

Abstract: A simulated flame structure comprises a bracket, a simulated flame element, a first magnetic element and a light-emitting element. The bracket is formed with a position limiting hole. The simulated flame element is restricted in the position limiting hole through a position limiting portion. The first magnetic element is disposed on the simulated flame element. The light-emitting element is disposed on the bracket and outputs light toward the simulated flame element. By magnetic attractive actions between the first magnetic element and a metal element in the position limiting hole, the simulated flame element may be suspended in the position limiting hole and naturally swing relatively to the bracket, thereby achieving visual effects of optimized flame combustion.

Abstract: The present invention provides a pacemaker signal detecting method, a pacemaker signal detecting system, and an electrocardial detecting device. The pacemaker signal detecting system pre-processes an original pacemaker signal separated from a pacemaker electrocardial signal, calculates a number of basic morphological features based on the pre-processed original pacemaker signal, confirms an authenticity of a pacemaker signal according to the calculated basic morphological features, and records positions of the true pacemaker signal has been confirmed. The basic morphological features include a width, a slew rate, and amplitude of the pacemaker signal. The electrocardial detecting device of the present invention can detect the pacemaker signal more precisely and output the electrocardial signal marked with the pacemaker signal.

Abstract: The present disclosure relates to a method of forming a resistive random access memory (RRAM) cell having a reduced leakage current, and an associated apparatus. In some embodiments, the method is performed by forming a bottom electrode over a lower metal interconnect layer using an atomic layer deposition (ALD) process to form at least a top portion of the bottom electrode. A dielectric data storage layer is formed onto the top portion of the bottom electrode in-situ with forming the top portion of the bottom electrode. A top electrode is formed over the dielectric data storage layer, and an upper metal interconnect layer is formed over the top electrode. By forming the top portion of the bottom electrode using an ALD process that is in-situ with the formation of the overlying dielectric data storage layer, leakage current, leakage current distribution and device yield of the RRAM cell are improved.

Abstract: A synthesis method of a heterocyclic compound is disclosed. The synthesis method includes steps of: carrying out a McMurry coupling reaction on a first compound having a carbonyl group to form a second compound, wherein the second compound includes an alkyl group which is symmetrical to a symmetrical center, and carrying out a 6?-cyclization on the second compound to form a third compound.

Abstract: A micro-electro mechanical system (MEMS) device is provided. The MEMS device includes a cap substrate and a MEMS substrate bonded with the cap substrate. The MEMS substrate includes a first movable element and a second movable element. The MEMS device also includes a first closed chamber between the MEMS substrate and the cap substrate, and the first movable element is in the first closed chamber. The MEMS device further includes an outgassing layer in the first closed chamber. In addition, the MEMS device includes a second closed chamber between the MEMS substrate and the cap substrate, and the second movable element is in the second closed chamber.

Abstract: A method of forming a semiconductor device having through molding vias includes eutectic bonding a capping wafer and a base wafer to form a wafer package. The base wafer includes a first chip package portion, a second chip package portion, and a third chip package portion. The capping wafer includes a plurality of isolation trenches and a plurality of separation trenches having a depth greater than the isolation trenches with respect to a same surface of the capping wafer. The method also includes removing a portion of the capping wafer exposing a first chip package portion contact, a second chip package portion contact, and a third chip package portion contact. The method further includes separating the wafer package to separate the wafer package into a first chip package, a second chip package, and a third chip package.

Abstract: Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided herein. A semiconductor arrangement comprises a cap wafer, a microelectromechanical systems (MEMS) wafer, and a complementary metal-oxide-semiconductor (CMOS) wafer. The MEMS wafer comprises a thermal insulator air gap formed between a sensing layer and a membrane. An ambient pressure chamber is formed between the CMOS wafer and the membrane of the MEMS wafer. The ambient pressure chamber is configured as a second thermal insulator air gap. The thermal insulator air gap and the second thermal insulator air gap protect portions of the semiconductor arrangement, such as the MEMS wafer, from heat originating from the CMOS wafer, which can otherwise damage such portions of the semiconductor arrangement. In some embodiments, one or more buffer layers are formed over the cap wafer as stress buffers.

Abstract: A method of updating network detection and selection information and traffic routing information for a communication device in a wireless communication system is disclosed. The method comprises updating network detection and selection information and traffic routing information by an access stratum procedure, handover procedure, area update procedure, attach procedure, or cell selection or reselection procedure.

Abstract: A sound transmitting apparatus, a sound receiving apparatus and a method for transferring data from the sound transmitting apparatus to the sound receiving apparatus using a sound signal are provided. In the method, a plurality of basic tones and control tones are defined by using a plurality of sound frequencies within a sound frequency range, in which each basic tone corresponds a character and each control tone corresponds an order of the basic tones. A plurality of characters in the data to be transferred are transformed into corresponding basic tones and the corresponding control tone is determined according to the order of the characters. The basic tones and the control tone are transmitted to the sound receiving apparatus. The sound receiving apparatus transforms the received basic tones into the characters and determines the order of the characters according to the received control tone, so as to recover the data.

Abstract: A method includes forming a MEMS device, forming a bond layer adjacent the MEMS device, and forming a protection layer over the bond layer.

Abstract: Embodiments of mechanisms of forming a semiconductor device structure are provided. The semiconductor device structure includes a substrate and a gate stack structure formed on the substrate. The semiconductor device structure also includes gate spacers formed on sidewalls of the gate stacks. The semiconductor device structure includes doped regions formed in the substrate. The semiconductor device structure also includes a strained source and drain (SSD) structure adjacent to the gate spacers, and the doped regions are adjacent to the SSD structure. The semiconductor device structure includes SSD structure has a tip which is closest to the doped region, and the tip is substantially aligned with an inner side of gate spacers.

Abstract: An authentication method for user equipment (UE) and LIPA network entities is applicable to a cross-LIPA communication environment having an UE end, a visiting LIPA network entity end (LIPAV), and a home LIPA network entity end (LIPAH). The UE end successfully registers to a core network (CN) via the LIPAV, thereby attaining mutual trust relationship between the UE end and the LIPAV. The UE end successfully registers to the CN via the LIPAH, thereby attaining mutual trust relationship between the UE end and the LIPAH. The LIPAH requests the UE end via the LIPAV for successfully re-authenticating the CN, thereby attaining mutual trust relationship between the LIPAV and the LIPAH.

Abstract: Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided herein. A semiconductor arrangement comprises a cap wafer, a microelectromechanical systems (MEMS) wafer, and a complementary metal-oxide-semiconductor (CMOS) wafer. The cap wafer comprises one or more spring structures, such as a first spring structure and a second spring structure. The first spring structure and the second spring structure relieve stress as portions of the semiconductor arrangement, such as a membrane and a poly layer, move. An ambient pressure chamber is formed between the CMOS wafer and the MEMS wafer, such as for CMOS outgassing relief. One or more thermal insulator structures are formed between the CMOS wafer and the MEMS wafer to protect the MEMS wafer from heat originating from the CMOS wafer.

Abstract: Among other things, one or more semiconductor arrangements and techniques for forming such semiconductor arrangements are provided herein. A semiconductor arrangement comprises a cap wafer, a microelectromechanical systems (MEMS) wafer, and a complementary metal-oxide-semiconductor (CMOS) wafer. The cap wafer comprises a first spring structure and the MEMS wafer comprises a second spring structure. The first spring structure and the second spring structure relieve stress as portions of the semiconductor arrangement, such as a membrane and a poly layer, move. An ambient pressure chamber is formed between the CMOS wafer and the MEMS wafer as a thermal insulation air gap to protect the MEMS wafer from heat originating from the CMOS wafer. The ambient pressure chamber is connected to ambient air, such as for CMOS outgassing relief.

Abstract: A stacked semiconductor structure includes a first substrate. A multilayer interconnect is disposed over the first substrate. Metal sections are disposed over the multilayer interconnect. First bonding features are over the metal sections. A second substrate has a front surface. A cavity extends from the front surface into a depth D in the second substrate. A movable structure is disposed over the front surface of the second substrate and suspending over the cavity. The movable structure includes a dielectric membrane, metal units over the dielectric membrane and a cap dielectric layer over the metal units. Second bonding features are over the cap dielectric layer and bonded to the first bonding features. The second bonding features extend through the cap dielectric layer and electrically coupled to the metal units.