Patents by Inventor Wen Hao

Wen Hao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11460787
    Abstract: An apparatus for generating a laminar flow includes an injection nozzle and a suction nozzle. The injection nozzle and the suction nozzle are operable to form the laminar flow for blocking particles from contacting a proximate surface of an object. The injection nozzle includes a main outlet to blow out the laminar flow and is configured to generate a Coanda flow along an external surface of the injection nozzle. The suction nozzle is configured to provide a gas pressure gradient for the laminar flow.
    Type: Grant
    Filed: October 20, 2021
    Date of Patent: October 4, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventor: Wen-Hao Cheng
  • Patent number: 11454877
    Abstract: An EUV reflective structure includes a substrate and multiple pairs of a Si layer and a Mo layer. The Si layer includes a plurality of cavities.
    Type: Grant
    Filed: October 2, 2019
    Date of Patent: September 27, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Benny Ku, Keith Kuang-Kuo Koai, Wen-Hao Cheng
  • Publication number: 20220300231
    Abstract: A data transmitting method of a display device, which applies to a transmitting device and the display device. The transmitting device includes a first transmitting module. The display device includes a processing module, a second transmitting module, a storage module, and a display module. The data transmission method includes steps of: select a file on the transmitting device; compress the file to form a compressed file; send the compressed file to the display device via the first transmitting module; receive the compressed file by the second transmitting module of the display device; decompress the compressed file by the processing module to obtain the file; write the file into the storage module by the processing module and correspondingly displaying on the display module based on the file. In this way, a time for transmitting the file could be effectively reduced.
    Type: Application
    Filed: March 17, 2021
    Publication date: September 22, 2022
    Applicant: WINSTAR DISPLAY CO., LTD.
    Inventors: CHIA-HSIANG NI, WEN-WEI CHUNG, YU-CHANG SONG, CHIEN-CHOU HSU, WEN-HAO LIAO, YU-PIN LIAO
  • Publication number: 20220297037
    Abstract: A device for removing particles in a gas stream includes a first cylindrical portion configured to receive the gas stream containing a target gas and the particles, a rotatable device disposed within the first cylindrical portion and configured to generate a centrifugal force when in a rotational action to divert the particles away from the rotatable device, a second cylindrical portion coupled to the first cylindrical portion and configured to receive the target gas, and a third cylindrical portion coupled to the first cylindrical portion and surrounding the second cylindrical portion, the third cylindrical portion being configured to receive the diverted particles.
    Type: Application
    Filed: July 28, 2021
    Publication date: September 22, 2022
    Inventors: Wen-Hao Cheng, Hsuan-Chih Chu, Yen-Yu Chen
  • Patent number: 11449656
    Abstract: A method including selecting a plurality of layout patterns, wherein each of the layout patterns comprises a corresponding via pillar structure that satisfies an electromigration (EM) rule, wherein each of the via pillar structures comprises metal layers and at least one via coupled to the metal layers. The method further includes selecting a layout pattern from the plurality of layout patterns having a smallest physical size. The method further includes performing a placement and routing process by using the selected layout pattern.
    Type: Grant
    Filed: September 23, 2020
    Date of Patent: September 20, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Shao-Huan Wang, Sheng-Hsiung Chen, Wen-Hao Chen, Chun-Chen Chen, Hung-Chih Ou
  • Patent number: 11448970
    Abstract: A lithography exposure system includes a light source, a substrate stage, and a mask stage between the light source and the substrate stage along an optical path from the light source to the substrate stage. The lithography exposure system further comprises a reflector along the optical path. The reflector comprises: a first layer having a first material and a first thickness; a second layer having the first material and a second thickness different from the first thickness; and a third layer between the first layer and the second layer, and having a second material different from the first material.
    Type: Grant
    Filed: March 23, 2021
    Date of Patent: September 20, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Eng Hock Lee, Wen-Hao Cheng
  • Patent number: 11435597
    Abstract: A displaying device adapted to a screen is provided. The displaying device includes a transparent pyramid, a movable support, and an image conversion unit. The movable support is connected to the transparent pyramid to move the transparent pyramid between a first location and a second location which is different from the first location. The first location is the position on the screen. The image conversion unit is configured to receive image data. When the transparent pyramid moves to the first location, the image conversion unit converts the image data to a holographic image displayed on the screen, and the transparent pyramid generates a 3D hologram based on the holographic image.
    Type: Grant
    Filed: December 18, 2019
    Date of Patent: September 6, 2022
    Assignee: ASUSTEK COMPUTER INC.
    Inventors: Wen-Hao Hsieh, Kai-Ze Luo, Ming-Lung Lin, Yu-Chen Lee, Sheng-Yen Tseng, Yen-Hui Zheng, Kuan-Yi Lin, Chih-Shien Lin
  • Patent number: 11429028
    Abstract: A method includes: providing a first layout of a first layer over a substrate, the first layer having at least one metal pattern, and generating a second layout by placing a cut mask at a first position relative to the substrate to remove material from a first region of the at least one metal pattern to provide a first metal pattern and placing the cut mask at a second position relative to the first layer over the substrate to remove material from a second region of the at least one metal pattern to provide a second metal pattern.
    Type: Grant
    Filed: November 13, 2019
    Date of Patent: August 30, 2022
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chin-Hsiung Hsu, Huang-Yu Chen, Tsong-Hua Ou, Wen-Hao Chen
  • Patent number: 11412023
    Abstract: The present disclosure discloses a video description generation method and apparatus, a video playing method and apparatus, and a computer-readable storage medium. The method includes: extracting video features, and obtaining a video feature sequence corresponding to video encoding moments in a video stream; encoding the video feature sequence by using a forward recurrent neural network and a backward recurrent neural network, to obtain a forward hidden state sequence and a backward hidden state sequence corresponding to each video encoding moment; and positioning, according to the forward hidden state sequence and the backward hidden state sequence, an event corresponding to each video encoding moment and an interval corresponding to the event at the video encoding moment, thereby predicting a video content description of the event.
    Type: Grant
    Filed: May 28, 2020
    Date of Patent: August 9, 2022
    Assignee: TENCENT TECHNOLOGY (SHENZHEN) COMPANY LIMITED
    Inventors: Jing Wen Wang, Wen Hao Jiang, Lin Ma, Wei Liu
  • Publication number: 20220246758
    Abstract: A switch device includes a P-type substrate, a first gate structure, a first N-well, a shallow trench isolation structure, a first P-well, a second gate structure, a first N-type doped region, a second P-well, and a second N-type doped region. The first N-well is formed in the P-type substrate and partly under the first gate structure. The shallow trench isolation structure is formed in the first N-well and under the first gate structure. The first P-well is formed in the P-type substrate and under the first gate structure. The first N-type doped region is formed in the P-type substrate and between the first gate structure and the second gate structure. The second P-well is formed in the P-type substrate and under the second gate structure. The second N-type doped region is formed in the second P-well and partly under the second gate structure.
    Type: Application
    Filed: April 15, 2022
    Publication date: August 4, 2022
    Applicant: eMemory Technology Inc.
    Inventors: Chih-Hsin Chen, Shih-Chen Wang, Tsung-Mu Lai, Wen-Hao Ching, Chun-Yuan Lo, Wei-Chen Chang
  • Patent number: 11397385
    Abstract: A lithography system includes a radiation source and a photomask. The radiation source is configured to generate electromagnetic radiation traveling towards the photomask. The lithography system also includes an incident channel between the radiation source and the photomask for the electromagnetic radiation to travel through. There are a first injection nozzle configured to generate a first particle shield between the photomask and an exit port of the incident channel and a second injection nozzle configured to generate a second particle shield inside the incident channel.
    Type: Grant
    Filed: September 28, 2020
    Date of Patent: July 26, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD
    Inventor: Wen-Hao Cheng
  • Publication number: 20220223788
    Abstract: A resistive memory cell includes a lower electrode, a resistive transition metal oxide layer, and an upper electrode. The lower electrode includes at least one lower metallic barrier layer, a lower metal layer including a first metal having a melting point higher than 2,000 degrees Celsius, and a transition metal compound layer including an oxide or nitride of a transition metal selected from Ti, Ta, and W. The resistive transition metal oxide layer includes a conductive-filament-forming dielectric oxide of at least one transition metal and located on the transition metal compound layer. The upper electrode includes an upper metal layer including a second metal having a melting point higher than 2,000 degrees Celsius and at least one upper metallic barrier layer.
    Type: Application
    Filed: November 3, 2021
    Publication date: July 14, 2022
    Inventors: Wen-Hao CHENG, Yuan-Huang LEE, Yu-Wen LIAO, Yen-Yu CHEN, Hsuan-Chih CHU
  • Publication number: 20220209188
    Abstract: Embodiments of the present disclosure generally relate to an organic light emitting diode device, and more particularly, to moisture barrier films utilized in an OLED device. The OLED device comprises a thin film encapsulation structure and/or a thin film transistor. A moisture barrier film is used as a first barrier layer in the thin film encapsulation structure and as a passivation layer and/or a gate insulating layer in the thin film transistor. The moisture barrier film comprises a silicon oxynitride material having a low refractive index of less than about 1.5, a low water vapor transmission rate of less than about 5.0×10?5 g/m2/day, and low hydrogen content of less than about 8%.
    Type: Application
    Filed: July 10, 2019
    Publication date: June 30, 2022
    Inventors: Wen-Hao WU, Jriyan Jerry CHEN, Dong Kil YIM
  • Patent number: 11375329
    Abstract: A method includes receiving a request to output audio at a speaker of an electronic device, determining whether the speaker of the electronic device is facing substantially towards or away from a support surface, identifying, based on whether the speaker of the electronic device is facing substantially towards or away from the support surface, an equalization setting, and providing, for output at the speaker of the electronic device, an audio signal with the equalization setting.
    Type: Grant
    Filed: August 16, 2019
    Date of Patent: June 28, 2022
    Assignee: GOOGLE TECHNOLOGY HOLDINGS LLC
    Inventors: Adrian M. Schuster, Kevin J. Bastyr, Prabhu Annabathula, Andrew K. Wells, Wen Hao Zhang
  • Publication number: 20220198122
    Abstract: A multi-bit flip-flop includes a first flip-flop, a second flip-flop and a first inverter. The first flip-flop has a first driving capability. The second flip-flop has a second driving capability different from the first driving capability. The first inverter is configured to receive a first clock signal on a first clock pin, and is configured to generate a second clock signal inverted from the first clock signal. The first flip-flop and the second flip-flop are configured to share at least the first clock pin.
    Type: Application
    Filed: March 11, 2022
    Publication date: June 23, 2022
    Inventors: Sheng-Hsiung CHEN, Wen-Hao CHEN, Hung-Chih OU, Chun-Yao KU, Shao-Huan WANG
  • Patent number: 11357128
    Abstract: A heat dissipation system with air sensation function includes a chassis, multiple fans, multiple air sensation units and an external control device connected to the fans. The chassis has an installation face for installing the fans thereon. The air sensation units are respectively disposed on the fans for detecting the air state of the corresponding fans to generate an air sensation signal. The external control device serves to receive the air sensation signal transmitted from the air sensation units and compare the data contained in the air sensation signal with preset data so as to control/adjust the rotational speed of the corresponding fans. Accordingly, a uniform airflow flows out of the fans to effectively lower the noise.
    Type: Grant
    Filed: November 18, 2019
    Date of Patent: June 7, 2022
    Assignee: Asia Vital Components Co., Ltd.
    Inventors: Bor-Haw Chang, Wen-Hao Liu
  • Patent number: 11346370
    Abstract: The present invention relates to a jet structure of a fan rotor, which comprises a fan wheel and at least one connecting channel. The fan wheel has a hub and plural blades disposed on the circumferential side of the hub. The hub has a top portion and a sidewall. Each of the blades has an upper surface and a lower surface which form a high-pressure zone and a low-pressure zone, respectively. The connecting channel is provided with at least one first inlet disposed in the high-pressure zone and at least one first outlet disposed in the low-pressure zone. The first inlet and the first outlet are a first end and a second end of the connecting channel, respectively. By means of the design of the present invention, the effect of noise reduction can be achieved.
    Type: Grant
    Filed: April 7, 2020
    Date of Patent: May 31, 2022
    Assignee: Asia Vital Components Co., Ltd.
    Inventors: Wen-Hao Liu, Yu-Tzu Chen
  • Publication number: 20220154330
    Abstract: A system and a method for detecting abnormality of a thin-film deposition process are provided. In the method, a thin-film is deposited on a substrate in a thin-film deposition chamber by using a target, a dimension of a collimator mounted between the target and the substrate is scanned by using at least one sensor disposed in the thin-film deposition chamber to derive an erosion profile of the target, and abnormality of the thin-film deposition process is detected by analyzing the erosion profile with an analysis model trained with data of a plurality of erosion profiles derived under a plurality of deposition conditions.
    Type: Application
    Filed: November 13, 2020
    Publication date: May 19, 2022
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Wen-Hao Cheng, Hsuan-Chih Chu, Yen-Yu Chen
  • Patent number: 11335805
    Abstract: A switch device includes a P-type substrate, a first gate structure, a first N-well, a shallow trench isolation structure, a first P-well, a second gate structure, a first N-type doped region, a second P-well, and a second N-type doped region. The first N-well is formed in the P-type substrate and partly under the first gate structure. The shallow trench isolation structure is formed in the first N-well and under the first gate structure. The first P-well is formed in the P-type substrate and under the first gate structure. The first N-type doped region is formed in the P-type substrate and between the first gate structure and the second gate structure. The second P-well is formed in the P-type substrate and under the second gate structure. The second N-type doped region is formed in the second P-well and partly under the second gate structure.
    Type: Grant
    Filed: September 8, 2020
    Date of Patent: May 17, 2022
    Assignee: eMemory Technology Inc.
    Inventors: Chih-Hsin Chen, Shih-Chen Wang, Tsung-Mu Lai, Wen-Hao Ching, Chun-Yuan Lo, Wei-Chen Chang
  • Patent number: 11331840
    Abstract: A lamination forming system includes a melt extruder, a nozzle head and a carrier unit. The melt extruder is configured to melt a plastic raw material into a plastic melt and to deliver the same. The nozzle head includes a sprue channel that has an inlet connected to the melt extruder for entry of the melt plastic into the sprue channel, and an outlet disposed distally from the inlet to deliver the plastic melt from the sprue channel. The carrier unit includes a slide table controllable to move relative to the nozzle head. The slide table is configure to carry the plastic melt outputted from the nozzle head.
    Type: Grant
    Filed: April 26, 2019
    Date of Patent: May 17, 2022
    Assignees: FORMOSA PLASTICS CORPORATION, NATIONAL KAOHSIUNG UNIVERSITY OF SCIENCE AND TECHNOLOGY
    Inventors: Chung-Ching Huang, Te-Wen Lee, Jen-Long Wu, Wen-Hao Kang, Ying-Cheng Weng