Abstract: A semiconductor device includes a substrate, a fin structure protruding from the substrate, a gate insulating layer covering a channel region formed of the fin structure, a gate electrode layer covering the gate insulating layer, and isolation layers disposed on opposite sides of the fin structure. The fin structure includes a bottom portion, a neck portion, and a top portion sequentially disposed on the substrate. A width of the neck portion is less than a width of the bottom portion and a width of a portion of the top portion.

Abstract: A semiconductor device and method of manufacture are provided. After a patterning of a middle layer, the middle layer is removed. In order to reduce or prevent damage to other underlying layers exposed by the patterning of the middle layer and intervening layers, an inhibitor is included within an etching process in order to inhibit the amount of material removed from the underlying layers.

Abstract: An optical system includes a base, a first lens driving module, and a second lens driving module. The first lens driving module includes a first lens holder, a first magnet, and a first coil. The first lens holder is configured to hold a first optical element. The first coil corresponding to the first magnet is configured to drive the first lens holder to move relative to the base. The second lens driving module includes a second lens holder, a second magnet, and a second coil. The second lens holder is configured to hold a second optical element. The second coil corresponding to the second magnet is configured to drive the second lens holder to move relative to the base. The first magnet is disposed between the first and second lens holders, and no other magnet is disposed between the first and second lens holders except the first magnet.

Abstract: A backside illumination (BSI) image sensor and a method of forming the same are provided. A device includes a substrate and a plurality of photosensitive regions in the substrate. The substrate has a first side and a second side opposite to the first side. The device further includes an interconnect structure on the first side of the substrate, and a plurality of recesses on the second side of the substrate. The plurality of recesses extend into a semiconductor material of the substrate.

Abstract: A waterproof structure includes a housing and a waterproof button. The housing has a first surface, a first side surface, and a second surface. The first side surface is recessed in the first surface to define a first opening, the first side surface is connected between the first surface and the second surface, and the second surface is exposed from the first opening. The waterproof button is disposed in the first opening and includes at least one first water blocking structure, and the first water blocking structure is pressed and deformed to abut against the first side surface.

Abstract: The disclosure relates to a microelectromechanical apparatus including a substrate, a stationary electrode, a movable electrode, and a heater. The substrate includes an upper surface, an inner bottom surface, and an inner side surface. The inner side surface surrounds and connects with the inner bottom surface. The inner side surface and the inner bottom surface define a recess. The stationary electrode is disposed on the inner bottom surface. The movable electrode covers the recess. The movable electrode, the inner bottom surface, and the inner side surface define a hermetic chamber. The heater is disposed on the movable electrode and located above the hermetic chamber.

Abstract: A trench power semiconductor device and a manufacturing method thereof are provided. The trench power semiconductor device includes a substrate, an epitaxial layer disposed on the substrate, and a gate structure. The epitaxial layer has at least one trench formed therein, and the gate structure is disposed in the trench. A gate structure includes a lower doped region and an upper doped region disposed above the lower doped region to form a PN junction. The concentration of the impurity decreases along a direction from a peripheral portion of the upper doped region toward a central portion of the upper doped region.

Abstract: A semiconductor power device and a manufacturing method thereof are provided. In the manufacturing method, before the self-aligned silicide process is performed, a gate stacked structure and a spacer are formed on a semiconductor layer having a body region and a source region. The spacer defines a portion of the source region for forming a silicide layer. Subsequently, the self-aligned silicide process is performed with the gate stacked structure and the spacer functioning as a mask to form the silicide layer at the defined portion of the source region. Thereafter, an interconnection structure including an interlayer dielectric layer and a source conductive layer is formed on the semiconductor layer. The source conductive layer is electrically connected to the source region. The silicide layer extends toward the gate stacked structure from a position under the source conductive layer to another position under the interlayer dielectric layer.

Abstract: A driving mechanism for moving an optical element is provided, including a movable portion, a fixed portion, a driving assembly, and a first resilient element. The movable portion is for connecting the optical element. The movable portion is movable relative to the fixed portion. The driving assembly drives the movable portion to move relative to the fixed portion. The first resilient element has a board structure. The movable portion is movably connected to the fixed portion via the first resilient element. The fixed portion includes a connection surface, a restricting surface, and a recessed portion. At least a portion of the first resilient element is disposed on the connection surface. The restricting surface contacts and restricts the movable portion. The recessed portion is located between the connection surface and the restricting surface, wherein the recessed portion is lower than the connection surface and the restricting surface.

Abstract: An antenna structure includes a metal housing, a first radiator, and an isolating portion. The metal housing includes a front frame, a backboard, and a side frame. The side frame is positioned between the front frame and the backboard. The side frame defines a slot and the front frame defines a gap. The gap communicates with the slot and extends across the front frame. The metal housing is divided into at least a long portion and a short portion by the slot and the gap. The first radiator is positioned adjacent to the short portion. The isolating portion is connected to the first radiator to improve isolation between the short portion and the first radiator.

Abstract: A head mounted display (HMD) apparatus is provided. The HMD apparatus includes a first lens, a second lens, a first micro-display disposed on the first lens, a second micro-display disposed on the second lens, a first light source, a second light source, and an eyeglass frame. A first side of the first micro-display corresponding to a first rubbing alignment processing direction and a first side of the second micro-display corresponding to a second rubbing alignment processing direction are symmetric with respect to a center line of the eyeglass frame between the first lens and the second lens. A first incident light emitted by the first light source is obliquely emitted from the first side of the first micro-display toward the first micro-display and a second incident light emitted by the second light source is obliquely emitted from the first side of the second micro-display toward the second micro-display.

Abstract: An antenna structure includes a metal housing, a first feed source, and a second feed source. The metal housing includes a front frame, a backboard, and a side frame. The side frame is positioned between the front frame and the backboard. The side frame defines a slot and the front frame defines a gap. The gap communicates with the slot and extends across the front frame. The metal housing is divided into at least a long portion and a short portion by the slot and the gap. The first feed source is electrically connected to the long portion and the second feed source is electrically connected to the short portion.

Abstract: A manufacturing method is applied to set a stackable chip package. The manufacturing method includes encapsulating a plurality of chips stacked with each other, disposing a lateral surface of the stacked chips having conductive elements onto a substrate, disassembling the substrate from the conductive elements when the stacked chips are encapsulated, and disposing a dielectric layer with openings on the stacked chips to align the openings with the conductive elements for ball mounting process.

Abstract: A method comprises depositing a mask layer on a front-side surface of a wafer, wherein a portion of the wafer has a first resistivity; with the mask layer in place, performing an ion implantation process on a backside surface of the wafer to implant a resistivity reduction impurity into the wafer through the backside surface of the wafer to lower the first resistivity of the portion of the wafer to a second resistivity; after performing the ion implantation process, removing the mask layer from the front-side surface of the wafer; and forming semiconductor devices on the front-side surface of the wafer.

Abstract: The present invention discloses a coating monitoring system of wind turbines, comprising a monitoring object having at least one coating on the surface. A coating monitoring module is coupled to the monitoring object, and the coating monitoring module comprises a MEMS system including a signal generating device, and a printed circuit board connected to the MEMS system. The coating monitoring module measures a measured coating impedance value of the monitoring object. A potentiostat, calculating an actual coating impedance value of the monitoring object, is connected to the monitoring object. And a computing device coupled to the coating monitoring module, the computing device correcting the measured coating impedance value based on the actual coating impedance value.

Abstract: The present invention provides a linear actuator. The linear actuator includes: a substrate having a cavity; a first fixed electrode structure fixed on the substrate; an elastic linkage; and a movable electrode structure connected to the substrate through the elastic linkage, wherein: the cavity has a first area; at least one of the first fixed electrode structure and the movable electrode structure has a second projection area on the substrate; and the first area and the second projection area overlap. The linear actuator allows the making of an out-of-plane linear motion motor with a large motion stroke, the robustness of impact, the easy removal of residual process contaminants, an improvement of the efficiency of electrical-to-mechanical energy conversion and the off-axis motion decoupling of movable comb structure.

Abstract: The present invention provides a tunable spectrum sensing device. The tunable spectrum sensing device includes: a device body; an out-of-plane motion motor mounted on the device body and including: a base having a normal direction; and a single-axis actuator having a motion direction parallel to the normal direction, and including: a substrate with an electronic element; and an actuating end driven by the electronic element; a first glass mounted on and moved by the actuating end; and a second glass mounted on the device body. The out-of-plane motion motor can keep an object at a specific rotation angle, position the object at a specific out-of-plane displacement or be programmed for the object to perform a specific scan trajectory motion. The out-of-plane motion motor also has a large motion stroke, and thus, there is no need to use multiple tunable spectrum sensing devices to satisfy the spectral bandwidth requirement.

Abstract: A micro-electromechanical actuating device is disclosed. The micro-electromechanical actuating device includes a substrate having a cavity having a first area; a fixing portion disposed on the substrate; a first frame disposed around the fixing portion; and an elastic element connecting the first frame and the fixing portion, and causing the first frame to be suspended above the substrate, wherein the first frame has a projecting area onto the substrate; and the first area and the projecting area have an overlapping portion.

Abstract: The present invention provides a single-axis actuator. The single-axis actuator includes: a substrate; a driving capacitor; an actuating end driven by the driving capacitor; and a first pair of resilient elements connecting the actuating end and the substrate for effecting a parametric characteristic of the single-axis actuator to apply to an generation of an acoustic wave.

Abstract: A method for manufacturing an apparatus having in-plane and out-of-plane motions is provided. The method includes the steps of providing an in-plane motion motor capable of moving in a first set of three degrees of freedom with respect to a reference plane for mounting thereon a functional device for performing the application function; providing an out-of-plane motion motor having a base plate surface and supporting thereon the in-plane motion motor; and providing four single-axis motors in the out-of-plane motion motor, wherein: each of the four single-axis motors has a single-axis actuator having an actuating end, a planar surface and a side surface; the side surface is attached to the base plate surface; and the four single-axis motors cooperatively enable the reference plane to be capable of moving in a second set of three degrees of freedom, wherein the first set of three degrees of freedom are all different from the second set of three degrees of freedom.