Abstract: The present invention relates to a reinforcing structure of unexpired concrete building floors used for reinforcing a concrete column, a concrete beam and a concrete floor slab. The structure has: at least one external column each of the at least one external column wrapping around the concrete column; at least one framework each wrapping around the concrete beam; a plurality of brackets fixedly mounted to the lower surface of the concrete floor slab, and a base plate disposed at the bottom of the concrete column, wherein the bottom of each of the at least one external column is fixed to the base plate, the top of each of the at least one external column is fixed to a corresponding one of the at least one framework, and the corresponding framework is fixed to the plurality of brackets along a length direction of the concrete beam.

Abstract: A semiconductor package is provided and includes: an insulative layer having opposing first and second surfaces; a wiring layer embedded in the insulative layer and having a first side that is exposed from the first surface of the insulative layer and a second side opposing the first side and attached to the second surface of the insulative layer; at least one electronic component mounted on the second side of the wiring layer and electrically connected to the wiring layer; and an encapsulating layer formed on the second side of the wiring layer and the second surface of the insulative layer and encapsulating the electronic component. Therefore, the single wiring layer is allowed to be connected to the electronic component on one side and connected to solder balls on the other side thereof to shorten the signal transmission path.

Abstract: An electrostatic-precipitator air cleaner includes a base, a shell, a fan, a barrel, a high-voltage discharge module, a distribution module and a precipitation module. The shell is connected to the base. The fan is connected to an upper portion of the shell. The barrel is connected to the shell above the base. The high-voltage discharge module is connected to the base and inserted in the barrel. The distribution module is connected to the high-voltage discharge module. The precipitation module is inserted in the barrel.

Abstract: Multi-chip wafer level packages and methods of forming the same are provided. A multi-chip wafer level package includes a first tier and a second tier. The first tier includes a first redistribution layer structure and at least one chip over the first redistribution layer structure. The second tier includes a second redistribution layer structure and at least two other chips over the second redistribution layer structure. The first tier is bonded to the second tier with the at least one chip being in physical contact with the second redistribution layer structure. The total number of connectors of the at least two other chips is greater than the total number of connectors of the at least one chip.

Abstract: A semiconductor device includes a semiconductor substrate, a contact region present in the semiconductor substrate, and a silicide present on a textured surface of the contact region. A plurality of sputter ions is present between the silicide and the contact region. Since the surface of the contact region is textured, the contact area provided by the silicide is increased accordingly, thus the resistance of an interconnection structure in the semiconductor device is reduced.

Abstract: In an embodiment, a method includes: stacking a plurality of first dies to form a device stack; revealing testing pads of a topmost die of the device stack; testing the device stack using the testing pads of the topmost die; and after testing the device stack, forming bonding pads in the topmost die, the bonding pads being different from the testing pads.

Abstract: Devices and methods for securing electronic transactions in a computing network are configured to receive a transaction, access transaction contextual data for the transaction, and apply one or more authentication decision rules to the transaction contextual data to determine initial authentication assessment information for the transaction. Further, aspects are configured to convert the initial authentication assessment information into a condensed authentication assessment indicator having an assessment value selected from a plurality of assessment values based on an assessment value definition, and transmit the condensed authentication assessment indicator. Also, aspects receive a transaction authentication decision based in part on the condensed authentication assessment indicator, and process or deny processing of the transaction based on the transaction authentication decision.

Abstract: A multi-gate semiconductor device having a fin element, a gate structure over the fin element, an epitaxial source/drain feature adjacent the fin element; a dielectric spacer interposing the gate structure and the epitaxial source/drain feature.

Abstract: Various embodiments of the present application are directed towards an ion-sensitive field-effect transistor for enhanced sensitivity. In some embodiments, a substrate comprises a pair of first source/drain regions and a pair of second source/drain regions. Further, a first gate electrode and a second gate electrode underlie the substrate. The first gate electrode is laterally between the first source/drain regions, and the second gate electrode is laterally between the second source/drain regions. An interconnect structure underlies the substrate and defines conductive paths electrically shorting the second source/drain regions and the second gate electrode together. A passivation layer is over the substrate and defines a first well and a second well. The first and second wells respectively overlie the first and second gate electrodes, and a sensing layer lines the substrate in the first and second wells. In some embodiments, sensing probes are in the first well, but not the second well.

Abstract: Transistor structures and methods of forming transistor structures are provided. The transistor structures include alternating layers of a first epitaxial material and a second epitaxial material. In some embodiments, one of the first epitaxial material and the second epitaxial material may be removed for one of an n-type or p-type transistor. A bottommost layer of the first epitaxial material and the second epitaxial material maybe be removed, and sidewalls of one of the first epitaxial material and the second epitaxial material may be indented or recessed.

Abstract: A semiconductor structure and a method for manufacturing the same are provided. The semiconductor structure includes a source line structure. The source line structure includes a composite material formed in a trench. The composite material includes an oxide portion and a metal portion.

Abstract: In accordance with some embodiments, a device includes first and second p-type transistors. The first transistor includes a first channel region including a first material of a first fin. The first transistor includes first and second epitaxial source/drain regions each in a respective first recess in the first material and on opposite sides of the first channel region. The first transistor includes a first gate stack on the first channel region. The second transistor includes a second channel region including a second material of a second fin. The second material is a different material from the first material. The second transistor includes third and fourth epitaxial source/drain regions each in a respective second recess in the second material and on opposite sides of the second channel region. The second transistor includes a second gate stack on the second channel region.

Abstract: Systems and methods are provided for fabricating semiconductor device structures on a substrate. A first fin structure is formed on a substrate. A second fin structure is formed on the substrate. A first semiconductor material is formed on both the first fin structure and the second fin structure. A second semiconductor material is formed on the first semiconductor material on both the first fin structure and the second fin structure. The first semiconductor material on the first fin structure is oxidized to form a first oxide. The second semiconductor material on the first fin structure is removed. A first dielectric material and a first electrode are formed on the first fin structure. A second dielectric material and a second electrode are formed on the second fin structure.

Abstract: A display may include an array of pixels. Each pixel in the array includes an organic light-emitting diode coupled to associated semiconducting oxide transistors. The semiconducting oxide transistors may exhibit different device characteristics. Some of the semiconducting oxide transistors may be formed using a first oxide layer formed from a first semiconducting oxide material using first processing steps, whereas other semiconducting oxide transistors are formed using a second oxide layer formed from a second semiconducting oxide material using second processing steps different than the first processing steps. The display may include three or more different semiconducting oxide layers formed during different processing steps.

Abstract: Multi-chip wafer level packages and methods of forming the same are provided. A multi-chip wafer level package includes a first tier and a second tier. The first tier includes a first redistribution layer structure and at least one chip over the first redistribution layer structure. The second tier includes a second redistribution layer structure and at least two other chips over the second redistribution layer structure. The first tier is bonded to the second tier with the at least one chip being in physical contact with the second redistribution layer structure. The total number of connectors of the at least two other chips is greater than the total number of connectors of the at least one chip.

Abstract: A device includes a first semiconductor strip, a first gate dielectric encircling the first semiconductor strip, a second semiconductor strip overlapping the first semiconductor strip, and a second gate dielectric encircling the second semiconductor strip. The first gate dielectric contacts the first gate dielectric. A gate electrode has a portion over the second semiconductor strip, and additional portions on opposite sides of the first and the second semiconductor strips and the first and the second gate dielectrics.

Abstract: Structures and formation methods of a chip package are provided. The chip package includes a semiconductor die and a package layer partially or completely encapsulating the semiconductor die. The chip package also includes a conductive feature penetrating through the package layer. The chip package further includes an interfacial layer the interfacial layer continuously surrounds the conductive feature. The interfacial layer is between the conductive feature and the package layer, and the interfacial layer is made of a metal oxide material.

Abstract: A handle extension structure includes a connection assembly and an operation assembly. The connection assembly has a first end and a second end opposite to each other. The operation assembly is slidably disposed at the connection assembly. The operation assembly includes an extension element and a grip element. The extension element has a first end portion and a second end portion opposite to each other. The first end portion is slidably disposed between the first end and the second end. The grip element is pivoted to the second end portion. An electronic device casing includes a body, a movable apparatus, and the handle extension structure. The handle extension structure is pivoted to the movable apparatus through the connection assembly.