Abstract: The device includes a projecting device, an image sensor and a computing circuit. The projecting device provides a light beam having a predetermined pattern that is projected onto an object. The image sensor receives the light beam reflected from the object to generate an image. The computing circuit compares the image with a first ground-truth image and a ground-truth image to generate a first depth value and a second depth value respectively. The first and second depth values are combined to generate a depth result.

Abstract: A stacked wiring structure includes a first wiring substrate and a second wiring substrate. The first wiring substrate includes a first glass substrate, multiple first conductive through vias penetrating through the first glass substrate, and a first multi-layered redistribution wiring structure disposed on the first glass substrate. The second wiring substrate includes a second glass substrate, multiple second conductive through vias penetrating through the second glass substrate, and a second multi-layered redistribution wiring structure disposed on the second glass substrate. The first conductive through vias are electrically connected to the second conductive through vias. The first glass substrate is spaced apart from the second glass substrate. The first multi-layered redistribution wiring structure is spaced apart from the second multi-layered redistribution wiring structure by the first glass substrate and the second glass substrate.

Abstract: A high electron mobility transistor device including a channel layer, a first barrier layer, and a P-type gallium nitride layer is provided. The first barrier layer is disposed on the channel layer. The P-type gallium nitride layer is disposed on the first barrier layer. The first thickness of the first barrier layer located directly under the P-type gallium nitride layer is greater than the second thickness of the first barrier layer located on two sides of the P-type gallium nitride layer.

Abstract: In some embodiments, the present disclosure relates to an integrated chip that includes a first interconnect dielectric layer arranged over a substrate. An interconnect wire extends through the first interconnect dielectric layer, and a barrier structure is arranged directly over the interconnect wire. The integrated chip further includes an etch stop layer arranged over the barrier structure and surrounds outer sidewalls of the barrier structure. A second interconnect dielectric layer is arranged over the etch stop layer, and an interconnect via extends through the second interconnect dielectric layer, the etch stop layer, and the barrier structure to contact the interconnect wire.

Abstract: Applications of butylidenephthalide (BP), comprising the use of BP in providing a kit for promoting differentiation of stem cells into brown adipose cells, and the use of BP in preparing a medicament, wherein the medicament is used for inhibiting the accumulation of white adipose cells, promoting the conversion of white adipose cells into brown adipose cells, inhibiting weight gain and/or reducing the content of triglycerides, glucose, and total cholesterol in blood.

Abstract: An electronic device, including a substrate, an edge wire, a first protection layer, and a second protection layer, is provided. The substrate has a first surface, a second surface, and a side surface connecting the first surface and the second surface. A normal vector of the side surface is different from the first surface and the second surface. The edge wire is configured on the substrate, extending from the first surface to the second surface while passing through the side surface. The first protection layer is configured on the edge wire. The edge wire is sandwiched between the substrate and the first protection layer. The edge wire and the first protection layer form an undercut structure. The second protection layer is configured on the substrate and fills the undercut structure. A manufacturing method of an electronic device is also provided.

Abstract: A semiconductor structure includes a conductive feature disposed over a semiconductor substrate, a via disposed in a first interlayer dielectric (ILD) layer over the conductive feature, and a metal-containing etch-stop layer (ESL) disposed on the via, where the metal-containing ESL includes a first metal and is resistant to etching by a fluorine-containing etchant. The semiconductor structure further includes a conductive line disposed over the metal-containing ESL, where the conductive line includes a second metal different from the first metal and is etchable by the fluorine-containing etchant, and where the via is configured to interconnect the conductive line to the conductive feature. Furthermore, the semiconductor structure includes a second ILD layer disposed over the first ILD layer.

Abstract: A display apparatus includes a display panel and an emission time control chip. The display panel has a plurality of sub-pixels, and each sub-pixel includes a light emitting device, a pixel driving circuit, and an emission time control circuit. The pixel driving circuit is configured to provide a driving signal for driving the light emitting device to emit light. The emission time control circuit is configured to connect the pixel driving circuit to the light emitting device in response to an emission control signal to control a duration of transmission of the driving signal to the light emitting device. The light emitting time control chip includes at least one output terminal. The emission time control chip is configured to transmit emission time control signals to the light emitting time control circuits of the plurality of sub-pixels through the at least one output terminal.

Abstract: A backside illumination (BSI) image sensor and a method of forming the same are provided. A device includes a substrate and a plurality of photosensitive regions in the substrate. The substrate has a first side and a second side opposite to the first side. The device further includes an interconnect structure on the first side of the substrate, and a plurality of recesses on the second side of the substrate. The plurality of recesses extend into a semiconductor material of the substrate.

Abstract: A semiconductor device package includes a substrate and a conductive lid. The conductive lid is disposed within the substrate. The conductive lid defines a waveguide having a cavity. The waveguide is configured to transmit a signal from a first electronic component to a second electronic component through the cavity.

Abstract: A cooling distribution unit includes a main body, a removable unit and an adjustment mechanism. The main body includes a first guiding structure. The removable unit includes a casing, a pump and a second guiding structure. The first guiding structure and the second guiding structure are coupled with each other. The adjustment mechanism includes a guiding slot and a fulcrum part. The guiding slot has a front end and a rear end. A distance between a center of the front end of the guiding slot and the fulcrum part is greater than a distance between a center of the rear end of the guiding slot and the fulcrum part. While the removable unit is locked on the main body or detached from the main body, the first guiding structure or the second guiding structure is disposed within the guiding slot.

Abstract: The present disclosure provides an electronic device. The electronic device includes a first interposer, a first interconnection array, a first shielding wall, and a second interconnection array. The first interconnection array is disposed in the first interposer and electrically connected to ground. The first shielding wall continuously extends at a side of the first interconnection array. The second interconnection array is disposed between the first shielding wall and the first interconnection array. The second interconnection array is configured to transmit a signal.

Abstract: The present disclosure provides a semiconductor device and a method of fabricating the same, the semiconductor device includes a substrate, an insulating layer, a plurality of bit lines, and a bit line contact. The insulating layer is disposed on the substrate, the bit lines are disposed on the insulating layer, and the bit line contact is disposed between the bit lines and the substrate, to electrically connect the bit lines, wherein the bit line contact comprises a first conductive layer and a first oxidized interface layer, and a bottommost surface of the first oxidized interface layer is lower than a top surface of the insulating layer. Through these arrangements, the semiconductor device includes the bit line contact having a composite semiconductor layer, which is allowable to improve the structural reliability of the bit lines and the bit line contacts, thereby achieve better performance.

Abstract: A memory device and a manufacturing method thereof are disclosed in the present invention. The memory device includes a substrate, trenches, an oxide semiconductor layer, a gate dielectric layer, and word line structures. The substrate includes active regions and an isolation structure located between the active regions. The active regions contain silicon. The trenches are disposed in the active regions and the isolation structure. The oxide semiconductor layer is disposed in each trench. The gate dielectric layer is disposed on the oxide semiconductor layer and located in each trench. The word line structures are disposed on the gate dielectric layer and located in the trenches, respectively. At least a portion of the gate dielectric layer is disposed between the oxide semiconductor layer and each word line structure.

Abstract: The present invention provides a semiconductor memory device including a substrate, a plurality of capacitors and a supporting layer disposed on the substrate, wherein each of the capacitors is connected with at least one of the adjacent capacitors through the supporting layer. Each of the capacitors includes first electrodes, a high-k dielectric layer and a second electrode, and the high-k dielectric layer is disposed between the first electrodes and the second electrode. Due to the supporting layer directly contacts the high-k dielectric layer through a surface thereof, and the high-k dielectric layer completely covers the surface, the second electrode may be formed directly within openings with an enlarged dimension. Accordingly, the process difficulty of performing the deposition and etching processes within the openings may be reduced, and the capacitance of the capacitors is further increased.

Abstract: A fan includes a motor base, a bearing, an impeller, a stator and a magnetic element. The motor base has a bearing stand in a center portion thereof. The impeller includes a metallic case, plural blades and a rotating shaft. A top surface of a top wall of the metallic case continuous with curved surface that defines part of a central opening, and a depth of the central opening is equal to a thickness of the top wall. The blades are disposed around an outer periphery of said metallic case. The rotating shaft is inserted into the central opening and penetrated through the bearing stand, wherein no raised ring structure is formed in the top wall, and the rotating shaft and the metallic case are jointed together by a laser welding process. The magnetic element is disposed on an inner wall of the metallic case and aligned with the stator.

Abstract: The present disclosure provides an electronic module including a circuit including a transmitting part and a receiving part physically separated from the transmitting part. The electronic module also includes an element isolated from the circuit and configured to block electrical interference between the transmitting part and the receiving part.

Abstract: A method including: obtaining data based an optical proximity correction for a spatially shifted version of a training design pattern; and training a machine learning model configured to predict optical proximity corrections for design patterns using data regarding the training design pattern and the data based on the optical proximity correction for the spatially shifted version of the training design pattern.

Abstract: The present disclosure relates to an electronic device that includes a first radiating element configured to radiate a first electromagnetic wave and a second radiating element configured to radiate a second electromagnetic wave. A first radiation pattern of the first electromagnetic wave is configured to be adjusted, and a second radiation pattern of the second electromagnetic wave is configured to be fixed.