Abstract: A method to make dyed functional film comprising the steps of providing a soluble polymer material; adding an appropriate solvent to the polymer material to make a soluble polymer solution; providing a soluble dye; adding an appropriate solvent to the dye to make a soluble dye solution; adding the dye solution to the polymer or PVA solution, and introducing the dyed polymer or PVA solution to a solution casting device; removing a thin dyed functional film from the casting device; and letting the dyed functional film dry and solidified.

Abstract: An electrical connector assembly includes a first connector and a second connector. The first connector includes a first terminal group and a first magnetic element around the first terminal group, the first terminal group defines a first central terminal and two first outer terminals located at both sides of the first central terminal. The second connector includes a second terminal group and a second magnetic element, the second terminal group defines a second central terminal, a second outer terminal and an elastic terminal located at both sides of the second central terminal. When the first connector is engaging with the second connector, the first and second magnetic elements are attached to each other, the first central terminal is contacting the second central terminal, the second outer terminal is contacting either of the first outer terminals and the elastic terminal is elastically abutting against the first magnetic element.

Abstract: An electrical connector includes an insulative seat, a plurality of terminals fixed to the insulative seat and at least one magnetic element retained in the insulative seat. The insulative seat defines a vertical first mating surface and a mating portion extending forwardly from the first mating surface, the mating portion defines an inclined second mating surface. Each terminal defines a contacting portion disposed in the mating portion and a soldering portion extending outside of the insulative seat. The mating portion defines a shallow recess recessed from the second mating surface, and the contacting portion defines a free end exposed on the shallow recess and locating behind the second mating surface.

Abstract: A method of fabricating a spatial semiconductor structure includes steps as follows. Firstly, a semiconductor substrate is provided. Then, a first mask layer is formed above the semiconductor substrate. Then, at least a first opening is formed in the first mask layer and exposes a portion of a surface of the semiconductor substrate. Then, a first semiconductor pattern is formed in the first opening. Then, a second mask layer is formed over the first semiconductor pattern and the first mask layer. Then, at least a second opening is formed through the second mask layer to the first mask layer and exposes another portion of the surface of the semiconductor substrate. And, a second semiconductor pattern is formed in the second opening.

Abstract: The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device includes: drift region, an isolation oxide region, a first oxide region, a second oxide region, a gate, a body region, a source, and a drain. The isolation oxide region, the first oxide region, and the second oxide region have an isolation thickness, a first thickness, and a second thickness respectively, wherein the second thickness is less than the first thickness. The present invention can reduce a conduction resistance without decreasing a breakdown voltage of the LDMOS device by the first oxidation region and the second oxidation region.

Abstract: A method of fabrication a transistor device with a non-uniform stress layer including the following processes. First, a semiconductor substrate having a first transistor region is provided. A low temperature deposition process is carried out to form a first tensile stress layer on a transistor within the first transistor region, wherein a temperature of the low temperature deposition process is lower than 300 degree Celsius (° C.). Then, a high temperature annealing process is performed, wherein a temperature of the high temperature annealing process is at least 150° C. higher than a temperature of the low temperature deposition process. Finally, a second tensile stress layer is formed on the first tensile stress layer, wherein the first tensile stress layer has a tensile stress lower than a tensile stress of the second tensile stress layer.

Abstract: Data processing device and method. The device includes: a spreadsheet of data displaying row for displaying a part of data retrieved from a database and a hyper row for expressing the remaining data; a data processor configured to calculate the value of the formula based on the data retrieved from the database. According to the device and method of the present invention, it is possible to eliminate overhead for loading data from the database to the spreadsheet when there are massive data records, continuously update the resulting data, and minimize users' development and migration cost.

Abstract: A method to manufacture infrared lens comprising the steps of: providing a portion of polyurethane (PU) material; mixing a portion of OH compound into said PU material to form a portion of OH PU material; providing a portion of solvent and mixing said OH PU material to said solvent to form a portion of PU solution; providing a portion of IR dye and mixing said IR dye to said PU solution to form a portion of IR PU solution; providing a portion of catalyst and mixing said catalyst to a portion of NCO compound to form a portion of NCO catalyst; mixing said NCO catalyst to said IR PU solution to form a portion of IR PU liquid solution; applying said IR PU liquid solution to a lens layer; allowing said PU liquid solution to solidify to form a IR functional lens layer.

Abstract: Embodiments of the present disclosure include a semiconductor device, a package and methods of forming a semiconductor device and a package. An embodiment is a semiconductor device including a molding material over a first substrate with a first opening having a first width in the molding material. The semiconductor device further includes a second opening having a second width in the molding material with the second width being greater than the first width. A first connector is in the first opening and a second connector is in the second opening.

Abstract: A projected capacitive touch panel comprises a touch control integrated circuit, sensing electrodes, driving electrodes, a MCU, a AC signal generator, a sensing bus, and a driving bus. The driving electrodes are made of high resistance material. One driving electrodes is selected by MCU based on firmware program as selected driving electrode. A low voltage AC signal is generated by the AC signal generator. The AC signal is transmitted to the selected driving electrode and its adjacent two driving electrodes via the driving bus. The rest of driving electrodes are connected to a fixed DC level. Providing the same AC signal to three driving electrodes simultaneously can induce higher sensing signal in the sensing electrodes.

Abstract: The present invention discloses a lateral double diffused metal oxide semiconductor (LDMOS) device and a manufacturing method thereof. The LDMOS device includes: drift region, an isolation oxide region, a first oxide region, a second oxide region, a gate, a body region, a source, and a drain. The isolation oxide region, the first oxide region, and the second oxide region have an isolation thickness, a first thickness, and a second thickness respectively, wherein the second thickness is less than the first thickness. The present invention can reduce a conduction resistance without decreasing a breakdown voltage of the LDMOS device by the first oxidation region and the second oxidation region.

Abstract: A wearable device including a display unit, a conductive frame and a belt-like structure is provided. The conductive frame surrounds a display region of the display unit, and the conductive frame has a first open slot. Besides, a feeding point and a first ground point are disposed on two sides of an opening of the first open slot, and the conductive frame forms a first antenna element. The belt-like structure is respectively connected to a first edge and a second edge, which are opposite to each other, of the conductive frame.

Abstract: Embodiments of the present disclosure include a semiconductor device, a package and methods of forming a semiconductor device and a package. An embodiment is a semiconductor device including a molding material over a first substrate with a first opening having a first width in the molding material. The semiconductor device further includes a second opening having a second width in the molding material with the second width being greater than the first width. A first connector is in the first opening and a second connector is in the second opening.

Abstract: An electrical connector includes an insulative housing, a positive terminal received in the housing and a metallic shell shielding around the mating portion. The housing has a base portion and a mating portion extending forwardly from the base portion. The metallic shell shields around the mating portion to form a first mating cavity opening forwardly and surrounding an outer surface of the mating portion. The mating portion has a second mating cavity recessed from a front face thereof to be separated from the first mating cavity and opening forwardly. The positive terminal has a contacting portion exposed in the second mating cavity.

Abstract: A gap-filling dielectric layer, method for fabricating the same and applications thereof are disclosed. A silicon-containing dielectric layer is firstly deposited on a substrate. The silicon-containing dielectric layer is then subjected to a curing process, an in-situ wetting treatment and an annealing process in sequence, whereby a gap-filling dielectric layer with a nitrogen atom density less than 1×1022 atoms/cm3 is formed.

Abstract: A liquid crystal display driving method is disclosed, where an interlaced image data is received or generated to generate an odd driving signal and an even driving signal, an odd number of gates and an even number of gates are driven according to the odd driving signal and the even driving signal at different signal frame periods, and sources are driven to inverse in their polarities when the driven gates are switched from the ones having the odd number to the even number. Since an alternating number of the sources is reduced, the efficacy of simultaneous promoted power saving and frame quality is achieved.

Abstract: A method of forming a pattern including following steps is provided. A wafer is provided, wherein the wafer includes a plurality of wafer interior dies and a plurality of wafer edge dies. A first pattern is formed on each of the wafer interior dies, and a second pattern is formed on each of the wafer edge dies. A method of forming the first patterns includes performing at least two exposure processes, and a method of forming the second patterns includes performing at least one of the at least two exposure processes, wherein a number of the exposure processes performed for forming the second patterns is less than a number of the exposure processes performed for forming the first patterns.

Abstract: An aquatic cultivation method for woody and drought-tolerant plants creates a symbiotic system of stable structure by steps of: (1) placing a seed in a pan for three to four weeks to grow an aquatic plant; (2) taking the aquatic plant out of the pan and removing dirt; (3) dipping the dirt-free aquatic plant into a beaker filled with a cultural liquid of somatotropic hormone for two to three hours; (4) taking out the aquatic plant and placing it into a container; (5) filling a substance into the container for securing the aquatic plant placed inside; (6) positioning the container on a water tank filled with water that the root of the aquatic plant can contact the water surface; and (7) completing cultivation when the root of the aquatic plant naturally extending into the water as adopted to an aquatic environment inside the water tank through time.