Abstract: A semiconductor device includes a substrate, an optical element, and a semiconductor element. The substrate includes a first region and a second region which are regions differing from each other. The optical element is formed in one of the first region and the second region. The electric element is formed in another of the first region and the second region. The first region includes a first insulating layer and a first semiconductor layer formed on the first insulating layer. The second region includes the first insulating layer, the first semiconductor layer, a second insulating layer formed on the first semiconductor layer, and a second semiconductor layer formed on the second insulating layer.

Abstract: A semiconductor device includes a first insulating layer, an optical modulator, and a multilayer wiring layer. The optical modulator is formed on the first insulating layer. The multilayer wiring layer is formed on the first insulating layer and including a wiring and a resistive element which are spaced apart from each other. The resistive element is formed without overlapping with the optical modulator in plan view. A material of the resistive element is at least one selected from the group consisting of titanium, titanium nitride, tantalum, tantalum nitride, tungsten, and silicon chromium.

Abstract: A semiconductor device includes a semiconductor substrate having a first surface, a second surface opposite to the first surface, and having a first recess portion formed on the first surface, a first cladding layer located in the first recess portion, and a first optical waveguide formed on the first cladding layer. The first optical waveguide overlaps with the first cladding layer in plan view.

Abstract: A semiconductor device includes a semiconductor substrate, a buried insulating film, a first conductive film, an insulating layer, a first contact and a second contact. The semiconductor substrate includes a first semiconductor region having a first conductive type and a second semiconductor region having a second conductive type. The buried insulating film surrounds the second semiconductor region in plan view. The first conductive film directly contacts with the first and second semiconductor regions. The first and second contacts overlap with the second semiconductor region in plan view and reach the first conductive film. The first contact is adjacent to the second contact along a first side of the second semiconductor region in plan view. In a direction along the first side, a first distance between the second semiconductor region and the buried insulating film is greater than a second distance between the first contact and the second contact.

Abstract: A semiconductor device includes a semiconductor substrate, a semiconductor element, and a multilayer wiring. The semiconductor element is formed on the semiconductor substrate. The multilayer wiring includes a wiring electrically connected with the semiconductor element, and a first inductor. The multilayer wiring is formed on the semiconductor substrate such that the multilayer wiring covers the semiconductor element. The first inductor is formed such that the first inductor electrically isolated from the wiring and is magnetically connected with the wiring.

Abstract: A semiconductor device includes: a first substrate; a multilayer wiring layer formed on the first substrate; a first inductor formed into a meander shape on the multilayer wiring layer in a plan view; and a second inductor formed into a meander shape on the multilayer wiring layer in a plain view, and arranged so as to be close to the first inductor in a plan view and not to overlap with the first inductor. A transformer is configured by the first inductor and the second inductor and, in a plan view, the first inductor and the second inductor extend along a first direction in which one side of the first substrate extends.

Abstract: A semiconductor device includes a semiconductor substrate, a multilayer wiring layer, a first inductor element, and a first capacitor element. The multilayer wiring layer is formed on the semiconductor substrate. The first inductor element and the first capacitor element are formed in the multilayer wiring layer. The first capacitor element is formed in the same layer as a layer in which the first inductor element is formed. The first capacitor element is formed inside the first inductor element in plan view.

Abstract: A semiconductor device includes a first insulating film, a first optical waveguide and a second optical waveguide. The first insulating film has a first surface and a second surface opposite to the first surface. The first optical waveguide is formed on the first surface of the first insulating film. The second optical waveguide is formed on the second surface of the first insulating film. The second optical waveguide, in plan view, overlaps with an end portion of the first optical waveguide without overlapping with another end portion of the first optical waveguide.

Abstract: A semiconductor device has a first area in which first and third semiconductor elements are formed, a second area in which second and fourth semiconductor elements are formed, and a third area located between the first and second areas. On the first to fourth semiconductor elements, a multilayer wiring layer including first and second inductors is formed. A through hole penetrating the semiconductor substrate is formed in the third area, and a first element isolation portion protruding from a front surface side of the semiconductor substrate toward a back surface side of the semiconductor substrate is formed in the through hole. Further, on the back surface side of the semiconductor substrate, the semiconductor substrate in the first area is mounted on the first die pad, and the semiconductor substrate in the second area is mounted on the second die pad.

Abstract: A semiconductor device includes a first semiconductor chip on which a first circuit is formed and a second semiconductor chip on which two circuits are formed. In the first semiconductor chip, a first inductor on the transmitting side electrically connected with the first circuit and a second inductor on the receiving side electrically connected with the second circuit via the bonding wire are formed. In plan view, the first inductor and the second inductor are disposed so as not to overlap each other, and are arranged along each other.

Abstract: The semiconductor module includes a first semiconductor chip and a second semiconductor chip. The first semiconductor chip includes an optical device such as an optical waveguide and wiring formed over the optical device. The second semiconductor chip include semiconductor elements such as MISFET, and wiring formed over the semiconductor elements. A top surface of the first semiconductor chip is laminated with a top surface of the second semiconductor chip such that the first and second wirings are directly contacted with each other.

Abstract: A semiconductor module includes a semiconductor chip including wiring formed over a semiconductor element such as a MISFET, a sealing resin part MR covering the semiconductor chip such that the wiring is exposed, and an inductor formed in redistribution wiring. The inductor overlaps with the sealing resin part covering at least a side surface of the semiconductor chip in plan view.

Abstract: A semiconductor device includes a first insulating layer, an optical modulator, and a multilayer wiring layer. The optical modulator is formed on the first insulating layer. The multilayer wiring layer is formed on the first insulating layer and including a wiring and a resistive element which are spaced apart from each other. The resistive element is formed without overlapping with the optical modulator in plan view. A material of the resistive element is at least one selected from the group consisting of titanium, titanium nitride, tantalum, tantalum nitride, tungsten, and silicon chromium.

Abstract: A semiconductor device includes a first insulating layer, an optical waveguide, a first slab portion, a second insulating layer, and a conductive layer. The optical waveguide is formed on the first insulating layer and has a first side surface and a second side surface. The first slab portion is adjacent to the first side surface. The second insulating layer is formed on the optical waveguide. The conductive layer is formed on the second insulating layer. The optical waveguide has a first conductivity type. The first slab portion has first portion, second portion and third portion. The first portion has a second conductivity type opposite to the first conductivity type. The second portion is located farther from the optical waveguide than the first portion and has a first conductivity type. The third portion is formed between the optical waveguide and the second portion and has the first conductivity type.

Abstract: Two optical waveguides and an insulating film provided to cover the optical waveguides are formed over an insulating layer. Two wirings and a heater metal wire are formed over the insulating film via an insulating film different from the above insulating film. The latter insulating film is thinner than the former insulating film, and has a higher refractive index than the former insulating film. The leaked light from either of the two optical waveguides can be suppressed or prevented from being reflected by any one of the two wirings, the heater metal wire, and the like to travel again toward the two optical waveguides by utilizing the difference between the refractive indices of the two insulating films.

Abstract: According to the present invention, a first semiconductor chip includes a semiconductor substrate, an optical waveguide formed on an upper surface of the semiconductor substrate, and a concave portion formed in the semiconductor substrate in a region that differs from a region in which the optical waveguide is formed. A second semiconductor chip includes a compound semiconductor substrate, and a light emitting unit formed on an upper surface of the compound semiconductor substrate and emitting a laser beam. The second semiconductor chip is mounted in the concave portion of the first semiconductor chip, and a pedestal which is an insulating film is formed between a bottom surface of the concave portion and a back surface of the compound semiconductor substrate.

Abstract: A semiconductor device includes a semiconductor substrate having a first surface, a second surface opposite to the first surface, and having a first recess portion formed on the first surface, a first cladding layer located in the first recess portion, and a first optical waveguide formed on the first cladding layer. The first optical waveguide overlaps with the first cladding layer in plan view.

Abstract: A first semiconductor chip and a second semiconductor chip are stacked such that a first inductor and a second inductor face each other. An insulating sheet is disposed between the first semiconductor chip and the second semiconductor chip. The sealing member seals the first semiconductor chip, the second semiconductor chip, and the insulating sheet. The sealing member is disposed both between the insulating sheet and the first semiconductor chip and between the insulating sheet and the second semiconductor chip.

Abstract: The semiconductor device includes a first semiconductor substrate having a first surface and a second surface having a relationship with each other, a first circuit and electrically connected to the first circuit, and a first inductor formed at a position overlapping with the first semiconductor substrate, between the first surface and the first circuit, a first chip formed so as to cover the first surface, a second semiconductor substrate having a third surface and a fourth surface having a relationship with each other, a second circuit and electrically connected, and a second inductor formed so as to be electromagnetically coupled with the first inductor, the second surface, grooves are formed to reach the first insulating film, in a plan view, It is formed so as to surround the first circuit.

Abstract: A semiconductor device includes a semiconductor substrate, a multilayer wiring layer, a first inductor element, and a first capacitor element. The multilayer wiring layer is formed on the semiconductor substrate. The first inductor element and the first capacitor element are formed in the multilayer wiring layer. The first capacitor element is formed in the same layer as a layer in which the first inductor element is formed. The first capacitor element is formed inside the first inductor element in plan view.