Abstract: The present application provides a method for forming a sidewall protection layer in a heavily N-type doped shielding polysilicon for reducing gate to source leakage in a shielded gate trench metal-oxide-semiconductor field effect transistor (SGT MOSFET). In the process of forming a shielding polysilicon sidewall is manufactured by using a secondary oxidation layer forming process, so as to increase a thickness of an oxide in a top region of the shielding polysilicon and a thickness of an oxide of a trench sidewall in a transition region between the shielding polysilicon and an N-type doped gate polysilicon to solve the problem of serious gate to source leakage current.

Abstract: The present application provides a shielded gate trench (SGT) semiconductor apparatus and a manufacturing method thereof. The SGT semiconductor apparatus includes a heavily N-type doped semiconductor substrate; an N-type epitaxial layer formed on the semiconductor substrate; at least one trench structure formed on the epitaxial layer and accommodating at least one gate polysilicon layer, where the trench structure includes a shielding polysilicon layer and an inter-polysilicon oxide layer; a P-type doped body and an N-type doped source layer formed on the epitaxial layer; a contact region formed for the source and the shield polysilicon connected to a source metal and the gate polysilicon connected to a gate meal. The SGT semiconductor apparatus is surrounded by a shield polysilicon termination trench; the gate polysilicon connected to the gate metal bus line is made outside the active region across the shield polysilicon termination trench.

Abstract: A system and method for logging error data from a central processing unit on a computer system using a dedicated crash dump device, is disclosed. The central processing unit has a management engine. The central processing unit sends an error signal. The dedicated crash dump device is coupled to the central processing unit to receive the error signal. A storage device is coupled to the crash dump device. The crash dump device sends a request to the central processing unit for error data. The crash dump device receives error data from the central processing unit. The crash dump device stores the error data in the storage device.

Abstract: An imaging lens assembly includes a plastic barrel and an optical element set. The optical element set includes an optical lens element, a light blocking sheet and a light-shielding layer. At least one surface of an object-side peripheral surface and an image-side peripheral surface of the optical lens element includes an annular side wall. An annular abutting surface of the light blocking sheet and the annular side wall of the optical lens element are disposed correspondingly to each other. The light-shielding layer surrounds a central opening of the light blocking sheet and includes an annular concave-curved portion. The annular concave-curved portion is for retaining the light blocking sheet, so that there is no relative displacement in a direction parallel to an optical axis between the annular abutting surface of the light blocking sheet and the annular side wall of the optical lens element.

Abstract: An organic light emitting element includes a first electrode a second electrode that faces the first electrode, an emission layer between the first electrode and the second electrode, the emission layer including quantum dots, and a hole transport layer between the first electrode and the emission layer. The quantum dots include at least one of a Group I-VI compound, a Group II-VI compound, and a Group III-VI compound. The hole transport layer includes at least one of a p-doped Group I-VI compound, a p-doped Group II-VI compound, and a p-doped Group III-VI compound.

Abstract: An imaging lens driving module includes an imaging lens set, a carrier element and a driving mechanism. The imaging lens set has an optical axis. The carrier element is configured to dispose the imaging lens set, and includes an assembling structure. The assembling structure is disposed on an outer surface of the carrier element, and extends along a direction away from the optical axis. The driving mechanism is configured to drive the carrier element to move, and includes at least one coil pair and at least two magnets. The coil pair is disposed on the assembling structure, and includes a bottom layer coil and a top layer coil. The bottom layer coil is wound around and directly contacted with the assembling structure. The top layer coil is stacked on and wound around the bottom layer coil. The magnets correspond to the coil pair, respectively.

Abstract: An imaging lens driving module includes a lens carrier, a molded receiving base, a rolling element, a molded frame element and a driving mechanism. The lens carrier defines an optical axis. The molded receiving base is configured to receive the lens carrier. The rolling element is disposed between the lens carrier and the molded receiving base, and the lens carrier is allowed to be displaceable along the optical axis and relatively to the molded receiving base. The molded frame element is coupled with the molded receiving base for defining an inner space to receive the lens carrier. The driving mechanism drives the lens carrier displaceable along the optical axis, and includes a driving magnet and a driving coil, wherein the driving magnet is disposed on the lens carrier, the driving coil is corresponding to and faces towards the driving magnet.

Abstract: A care composition includes an extract from the stems and/or the leaves of a sweet potato, and/or a yam-bean, and/or a yam together with an ion solution. The care composition has a salinity of 0.9%-4% (W/W) and contains less than 0.3% (W/W) of sodium, 0.3%-1% (W/W) of magnesium, and 0.02%-0.2% (W/W) of potassium.

Abstract: An imaging lens assembly includes a plurality of plastic lens elements, a plastic lens barrel, a retaining element, a glue material and a first void structure. The plastic lens barrel includes a plate portion and a tube portion. The plate portion has a central hole, and an optical axis of the imaging lens assembly passing through the central hole. The tube portion is extended from the plate portion which is parallel with the optical axis and defining an inner space and the plastic lens elements is disposed in the inner space. The glue material is disposed between one of the plastic lens elements and the tube portion of the plastic lens barrel, and surrounds the one of the plastic lens elements. The first void structure is extended from the central hole to the tube portion. The plastic lens elements are including a first lens element.

Abstract: A packaged semiconductor includes a substrate and a first component disposed on the substrate. The package includes an underfill that is dispensed under and around the first component. The package also includes a second component disposed on the substrate adjacent to the first component that provides a border to the underfill.

Abstract: An imaging lens driving module includes a base, a casing, a driving mechanism and a damping element. The base has an opening, and the casing has a central aperture corresponding to the opening. The casing includes a plastic frame portion and a metal structure portion. The plastic frame portion is coupled to the base. The metal structure portion has a plurality of pins extending towards the base. The driving mechanism is disposed in the casing. The driving mechanism is configured to drive the lens unit to move in a direction parallel to an optical axis. The damping element is connected to the pins and the lens unit. The metal structure portion is insert-molded with the plastic frame portion to form the casing. The pins are located closer to the optical axis than the other part of the metal structure portion to the optical axis.

Abstract: A filter includes multiple filter circuits. The filter circuits are coupled in series between an input terminal and an output terminal, to generate an output signal according to an input signal. One of the filter circuits operates as an active filter circuit or a passive filter circuit according to amplitude of the input signal.

Abstract: An integrated circuit system including: a split gate super junction cell includes: a highly doped substrate including a first polarity; an epitaxial layer including the first polarity grown on the highly doped substrate; a stripe gate trench formed in the epitaxial layer; a stripe gate poly layer formed in the stripe gate trench; a dot body implant, including a second polarity, implanted adjacent to the stripe gate trench opposite the stripe gate poly layer; and a conductive column, including the second polarity, implanted in the center of the dot body implant and extending into the epitaxial layer.

Abstract: An imaging lens assembly module includes an imaging lens assembly, a light path folding element, a first lens barrel, a second lens barrel, a base and a plurality of rolling bearings. The imaging lens assembly includes a plurality of plastic lens elements, and defines a first optical axis passing through the plastic lens elements. The first lens barrel contains one or more of the plastic lens elements. The second lens barrel contains another one or more of the plastic lens elements. The base includes a guiding groove structure, and the guiding groove structure extends continuously along a direction parallel to the first optical axis. The rolling bearings interposed between the first lens barrel and the base and the rolling bearings interposed between the second lens barrel and the base are interposed in the guiding groove structure.

Abstract: A method includes transferring a wafer into a first processing chamber by using a robot arm mechanism, and applying a photoresist on the wafer in a first processing chamber. The wafer is transferred from the first processing chamber into a second processing chamber by using the robot arm mechanism, and the photoresist is exposed to a pattern of light in the second processing chamber. The method includes transferring the wafer from the second processing chamber into a third processing chamber by using the robot arm mechanism, and developing the exposed wafer in the third processing chamber. The method includes cleaning the robot arm mechanism in a dummy chamber.

Abstract: There is provided a method for geometrical reconstruction of an internal anatomical structure using at least one processor based on a set of contours derived from the internal anatomical structure, the set of contours including a first subset of long-axis contours obtained based on a first set of long-axis images of the internal anatomical structure. The method includes: adjusting the set of contours, comprising adjusting the first subset of long-axis contours to correct for motion artefacts in the first set of long-axis images; and deforming a template three-dimensional (3D) surface mesh preconfigured for the internal anatomical structure's type into a deformed 3D surface mesh based on the adjusted set of contours to obtain the geometrical reconstruction of the internal anatomical structure. In particular, the internal anatomical structure is a heart. There is also provided a corresponding system for geometrical reconstruction of an internal anatomical structure.

Abstract: The present disclosure provides a semiconductor structure. The semiconductor structure includes a gallium nitride (GaN) layer on a substrate; an aluminum gallium nitride (AlGaN) layer disposed on the GaN layer; a gate stack disposed on the AlGaN layer; a source feature and a drain feature disposed on the AlGaN layer and interposed by the gate stack; a dielectric material layer is disposed on the gate stack; and a field plate disposed on the dielectric material layer and electrically connected to the source feature, wherein the field plate includes a step-wise structure.

Abstract: A resin composition is provided. The resin composition includes a styrene-acrylonitrile based copolymer of 75 parts by weight to 90 parts by weight and rubber particles of 10 parts by weight to 25 parts by weight. The resin composition includes an oligomer trimer. The oligomer trimer includes at least one monomer unit selected from the group consisting of a styrene based monomer unit and an acrylonitrile based monomer unit. Wherein, a residual acrylonitrile based monomer is less than 5 ppm of the total weight of the resin composition. The ratio of the peak area of acetophenone to the peak area of air for the resin composition as analyzed by a thermal desorption gas chromatography mass spectrometer (TD-GC-MS) is 100 to 300.

Abstract: Various embodiments of the present application are directed towards an integrated circuit (IC) in which a high voltage metal-oxide-semiconductor (HVMOS) device is integrated with a high voltage junction termination (HVJT) device. In some embodiments, a first drift well and a second drift well are in a substrate. The first and second drift wells border in a ring-shaped pattern and have a first doping type. A peripheral well is in the substrate and has a second doping type opposite the first doping type. The peripheral well surrounds and separates the first and second drift wells. A body well is in the substrate and has the second doping type. Further, the body well overlies the first drift well and is spaced from the peripheral well by the first drift well. A gate electrode overlies a junction between the first drift well and the body well.