Patents by Inventor Ying Zhang

Ying Zhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8538224
    Abstract: A light extraction film having internal nanostructures and external microstructures for organic light emitting diode (OLED) devices. The light extraction film includes a flexible substantially transparent film, a low index nanostructured layer applied to the film, and a high index planarizing backfill layer applied over the nanostructured layer. External optical microstructures are applied to the flexible substantially transparent film on a side opposite the nanostructured layer to enhance light extraction from the OLED devices while providing for a more uniform luminance distribution.
    Type: Grant
    Filed: April 22, 2010
    Date of Patent: September 17, 2013
    Assignee: 3M Innovative Properties Company
    Inventors: Sergey A. Lamansky, Terry L. Smith, Jun-Ying Zhang, Leslie A. Todero, Encai Hao, Ha T. Le, Ding Wang, Fei Lu, Shoichi Masuda
  • Patent number: 8538223
    Abstract: A method for making a waveguide comprises (a) providing a waveguide structure comprising a substrate (22), a lower cladding (20) layer on the substrate, and a core layer (24) comprising silicon nitride, amorphous silicon, or amorphous silicon-germanium alloy on the lower cladding layer; (b) patterning the core layer; and (c) annealing (28) the waveguide structure.
    Type: Grant
    Filed: November 21, 2008
    Date of Patent: September 17, 2013
    Assignee: 3M Innovative Properties Company
    Inventors: Jun-Ying Zhang, Terry L. Smith, Barry J. Koch, Yasha Yi
  • Publication number: 20130238766
    Abstract: A system includes a storage device and a processor. The storage device is configured to store a first set of values of TCP options for a first group of servers. The processor is configured to: transmit first requests to the first group of servers; receive first replies, in response to the first requests, from the first group of servers; determine the first set of values of the TCP options for the first group based on values in the first replies; store the first set of values in the storage device; receive a first message from a client to establish a connection between the client and a server in the first group of servers, and transmit, in response to the first message, a second message to the client.
    Type: Application
    Filed: April 26, 2013
    Publication date: September 12, 2013
    Applicant: JUNIPER NETWORKS, INC.
    Inventors: Xinhua HONG, Hongbin Wang, Ying Zhang, Kirishna Narayanaswamy, Michael Luo
  • Patent number: 8525235
    Abstract: A method for fabricating an integrated circuit includes patterning a mandrel over a layer to be patterned. Dopants are implanted into exposed sidewalls of the mandrel to form at least two doped layers having at least one undoped region adjacent to the doped layers. The doped layers are selectively etched away to form pillars from the undoped regions. The layer to be patterned is etched using the pillars as an etch mask to form features for an integrated circuit device. A semiconductor device is also disclosed.
    Type: Grant
    Filed: July 18, 2012
    Date of Patent: September 3, 2013
    Assignee: International Business Machines Corporation
    Inventors: Kangguo Cheng, Bruce B. Doris, Ying Zhang
  • Publication number: 20130216784
    Abstract: Superhydrophobic films (200, 400) are disclosed. More particularly, durable superhydrophobic films (200, 400) having discrete flat faces (206, 406) spaced apart by valleys (208, 408) where the valleys and faces are covered by nanostructures or nanoparticles (424) are disclosed. Various methods of making such films are also disclosed.
    Type: Application
    Filed: October 20, 2011
    Publication date: August 22, 2013
    Applicant: 3M INNOVATIVE PROPERTIES COMPANY
    Inventors: Jun-Ying Zhang, Terry L. Smith, Katherine A. Brown, Vivian W. Jones, David K. Sayler, Timothy J. Hebrink, Qingbing Wang, Karan Jindal, Encai Hao
  • Publication number: 20130215769
    Abstract: A method implemented by a network topology design system, the network topology design system including a processing device. The method to determine placement of a controller within a network with a split architecture where control plane components of the split architecture network are executed by a controller and the control plane components are separate from data plane components of the split architecture network. The placement of the controller is selected to minimize disruption of the split architecture network caused by a link failure, a switch failure or a connectivity loss between the controller and the data plane components.
    Type: Application
    Filed: February 22, 2012
    Publication date: August 22, 2013
    Applicant: Telefonaktiebolaget L M Ericsson (publ)
    Inventors: Neda Beheshti-Zavareh, Ying Zhang, Joel Halpern
  • Publication number: 20130219048
    Abstract: A method is implemented in a network element to generate quality of experience (QoE) metrics for hypertext transfer protocol (HTTP) sessions over a network between a user device and an HTTP server. The QoE metrics are based on detecting premature termination of a download process that indicate low QoE. This QoE metric data can then be utilized by network administrators or service providers to adjust network characteristics to improve the QoE or to offer changes in services to a customer that would improve the QoE.
    Type: Application
    Filed: February 21, 2012
    Publication date: August 22, 2013
    Applicant: Telefonaktiebolaget L M Ericsson(publ)
    Inventors: Åke Arvidsson, Neda Beheshti, Ying Zhang
  • Publication number: 20130211310
    Abstract: Disclosed are surfaces for resisting and reducing biofilm formation, particularly on medical articles (100). The surfaces include a plurality of microstructures (120) including a plurality of nanofeatures (140) arranged according to at least one unit cell. Also disclosed are methods for creating anti-adherent surfaces.
    Type: Application
    Filed: October 28, 2011
    Publication date: August 15, 2013
    Applicant: 3M INNOVATIVE PROPERTIES COMPANY
    Inventors: G. Marco Bommarito, Matthew T. Scholz, Michael J. Svarovsky, Jeremy M. Yarwood, Scott M. Schnobrich, Robert J. DeVoe, Jun-Ying Zhang, Terry L. Smith
  • Patent number: 8496258
    Abstract: A hybrid torsion beam axle assembly is provided, which includes a steel torsion beam. An end cap is fastened to an end portion of the steel torsion beam, and a cast trailing arm is cast about the end portion of the steel torsion beam including the end cap. In this way, the cast trailing arm is positively and rigidly secured to the steel torsion beam.
    Type: Grant
    Filed: October 26, 2010
    Date of Patent: July 30, 2013
    Assignee: Magna International Inc.
    Inventors: Mark F. Werner, Timothy W. Skszek, Frank A. Horton, Warren Young, Seetarama S. Kotagiri, Gregory P. Kiselis, DeWayne Dale Egle, Gianfranco Gabbianelli, Jeffrey Jay Mellis, Erryn Leigh Langlois, Daniel Sulisz, Pascal P. Charest, Eric deNijs, Ying Zhang, Ryan R. Warpup, Dalip K. Matharoo
  • Publication number: 20130186803
    Abstract: A wafer transport pod for storing or transporting semiconductor wafers during semiconductor wafer processing includes a body having a top panel, a bottom panel, a back panel, two side panels and a front panel. The two side panels are configured for receiving the semiconductor wafers therebetween, The two side panels have a plurality of separately hermetically sealed partitions inside the body, any two of the sealed partitions for sealing a wafer therebetween and for preventing wafer contamination. The front panel provides ingress and egress for the semiconductor wafers to and from the wafer transport pod.
    Type: Application
    Filed: January 20, 2012
    Publication date: July 25, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ying ZHANG, Tien-Chih CHENG, Shu-Huei SUEN, Yu-Cheng LIU, Jian-Huah CHIOU
  • Patent number: 8481389
    Abstract: A semiconductor structure, and method of forming a semiconductor structure, that includes a gate structure on a semiconductor substrate, in which the gate structure includes a gate conductor and a high-k gate dielectric layer. The high-k gate dielectric layer is in contact with the base of the gate conductor and is present on the sidewalls of the gate conductor for a dimension that is less than ¼ the gate structure's height. The semiconductor structure also includes source regions and drain regions present in the semiconductor substrate on opposing sides of the gate structure.
    Type: Grant
    Filed: April 5, 2011
    Date of Patent: July 9, 2013
    Assignee: International Business Machines Corporation
    Inventors: Ying Zhang, Qingyun Yang, Hongwen Yan
  • Patent number: 8469551
    Abstract: Optical films for enhancing light extraction from self-emissive pixelated OLEDs, without introducing significant pixel blur, are disclosed. The extraction films include a flexible carrier film, and a first and second layer carried by the carrier film. The first layer has a nanovoided morphology, includes a polymer binder, and may have a refractive index less than 1.35 or 1.3. An embedded structured surface of light extraction elements is formed between the first and second layers. The extraction film includes a major coupling surface for attachment to an outer surface of the light source. The film is configured such that a land portion between the structured surface and the major coupling surface is thinner than a specified amount, e.g., less than 50, 25, or 10 microns, or less than a thickness of the carrier film.
    Type: Grant
    Filed: October 20, 2010
    Date of Patent: June 25, 2013
    Assignee: 3M Innovative Properties Company
    Inventors: Martin B. Wolk, Sergey Lamansky, David S. Thompson, Zhaohui Yang, Jun-Ying Zhang, Encai Hao, William Blake Kolb, Audrey A. Sherman, Kevin R. Schaffer
  • Publication number: 20130149701
    Abstract: The present invention relates to methods, compositions, assays and kits for identifying an antibacterial agent that decreases persister formation or survival, eliminates or reduces bacterial infection or disease and/or increases killing of a bacterial cell.
    Type: Application
    Filed: June 17, 2011
    Publication date: June 13, 2013
    Inventors: Ying Zhang, Wanliang Shi
  • Patent number: 8461608
    Abstract: Light converting constructions are disclosed. The light converting construction includes a phosphor slab that has a first index of refraction for converting at least a portion of light at a first wavelength to light at a longer second wavelength; and a structured layer that is disposed on the phosphor slab and has a second index of refraction that is smaller than the first index of refraction. The structured layer includes a plurality of structures that are disposed directly on the phosphor slab and a plurality of openings that expose the phosphor slab. The light converting construction further includes a structured overcoat that is disposed directly on at least a portion of the structured layer and a portion of the phosphor slab in the plurality of openings. The structured overcoat has a third index of refraction that is greater than the second index of refraction.
    Type: Grant
    Filed: June 3, 2009
    Date of Patent: June 11, 2013
    Assignee: 3M Innovative Properties Company
    Inventors: Terry L. Smith, Michael A. Haase, Jun-Ying Zhang
  • Patent number: 8457829
    Abstract: A system and method for determining characteristics of a physical environment with simple motion patterns are provided. A plurality of raw orientation readings are received from a simple motion pattern. A distribution of possible wall orientations upon each raw reading is determined. Wall direction is determined as the mean value of the distribution.
    Type: Grant
    Filed: February 19, 2010
    Date of Patent: June 4, 2013
    Assignee: Palo Alto Research Center Incorporated
    Inventors: Qingfeng Huang, Ying Zhang
  • Patent number: 8449781
    Abstract: The present disclosure relates to a method for selectively etching-back a polymer matrix to expose tips of carbon nanotubes comprising: a. growing carbon nanotubes on a conductive substrate; b. filling the gap around the carbon nanotubes with a polymeric fill matrix comprising at least one latent photoacid generator; and c. selectively etching-back the polymeric fill matrix to expose tips of the carbon nanotubes.
    Type: Grant
    Filed: June 22, 2010
    Date of Patent: May 28, 2013
    Assignee: International Business Machines Corporation
    Inventors: Maxime Darnon, Gerald W. Gibson, Pratik P. Joshi, Ryan M. Martin, Ying Zhang
  • Publication number: 20130132542
    Abstract: A method implemented in a network element to determine an autonomous system (AS) path pre-pending (ASPP) vector for an AS of the network element that accounts for AS business relationship induced policies and global impact of ASPP decisions by using comparable paths between AS in a network for application of network management strategies, the comparable paths grouped by path types defined by local preference polices, the method including gathering AS level topological data for the network, categorizing AS link relationships in the topological data, computing the comparable paths for each AS pair, and applying any one of a load balancing process, back-up path provisioning process or traversal avoidance process to the comparable paths to determine an ASPP vector for the AS of the network element.
    Type: Application
    Filed: November 18, 2011
    Publication date: May 23, 2013
    Applicant: Telefonktiebolaget L M Ericsson (publ)
    Inventor: Ying Zhang
  • Patent number: 8445948
    Abstract: Methodologies and gate etching processes are presented to enable the fabrication of gate conductors of semiconductor devices, such as NFETs and/or PFETs, which are equipped with nano-channels. In one embodiment, a sacrificial spacer of equivalent thickness to the diameter of the gate nano-channel is employed and is deposited after patterning the gate conductor down to the gate dielectric. The residue gate material that is beneath the nano-channel is removed utilizing a medium to high density, bias-free, fluorine-containing or fluorine-and chlorine-containing isotropic etch process without compromising the integrity of the gate. In another embodiment, an encapsulation/passivation layer is utilized. In yet further embodiment, no sacrificial spacer or encapsulation/passivation layer is used and gate etching is performed in an oxygen and nitrogen-free ambient.
    Type: Grant
    Filed: September 20, 2010
    Date of Patent: May 21, 2013
    Assignee: International Business Machines Corporation
    Inventors: Nicholas C. M. Fuller, Sarunya Bangsaruntip, Guy Cohen, Sebastian U. Engelmann, Lidija Sekaric, Qingyun Yang, Ying Zhang
  • Patent number: 8440523
    Abstract: A method is disclosed to fabricate an electro-mechanical device such as a MEMS or NEMS switch. The method includes providing a structure composed of a silicon layer disposed over an insulating layer that is disposed on a silicon substrate. The silicon layer is differentiated into a partially released region that will function as a portion of the electro-mechanical device. The method further includes forming a dielectric layer over the silicon layer; forming a hardmask over the dielectric layer, the hardmask being composed of hafnium oxide; opening a window to expose the partially released region; and fully releasing the partially released region using a dry etching process to remove the insulating layer disposed beneath the partially released region while using the hardmask to protect material covered by the hardmask. The step of fully releasing can be performed using a HF vapor.
    Type: Grant
    Filed: December 7, 2011
    Date of Patent: May 14, 2013
    Assignee: International Business Machines Corporation
    Inventors: Michael A Guillorn, Fei Liu, Ying Zhang
  • Publication number: 20130109183
    Abstract: A multilayer construction is disclosed. The multilayer construction includes a -II-VI semiconductor layer (110)x and a Si3N4 layer (120) disposed directly on the II-VI semiconductor layer. To improve the adhesion of the Si3N4 layer (120) a native oxide on the II-VI semiconductor layer is removed.
    Type: Application
    Filed: June 1, 2011
    Publication date: May 2, 2013
    Applicant: 3M INNOVATIVE PROPERTIES COMPANY
    Inventors: Jun-Ying Zhang, Michael A. Haase, Todd A. Ballen, Terry L. Smith