Abstract: A method for fabricating an integrated circuit includes patterning a mandrel over a layer to be patterned. Dopants are implanted into exposed sidewalls of the mandrel to form at least two doped layers having at least one undoped region adjacent to the doped layers. The doped layers are selectively etched away to form pillars from the undoped regions. The layer to be patterned is etched using the pillars as an etch mask to form features for an integrated circuit device. A semiconductor device is also disclosed.

Abstract: An apparatus for detecting electromagnetic waves includes a first electromagnetic wave sensor, two first electrodes, a second electromagnetic wave sensor, and two second electrodes. The two first electrodes are electrically connected to different portions of the first electromagnetic wave sensor. The second electromagnetic wave sensor crosses with and is spaced from the first electromagnetic wave sensor. The two second electrodes are electrically connected to different portions of the second electromagnetic wave sensor.

Abstract: Methods and compositions utilizing a drilling fluid comprising sub-micron precipitated barite having a weight average particle diameter below about 1 micron. Methods include a method comprising circulating a drilling fluid in a well bore, wherein the drilling fluid comprises: a carrier fluid; and a weighting agent that comprises sub-micron precipitated barite having a weight average particle diameter below about 1 micron are disclosed. In some embodiments, the drilling fluid may comprise an invert emulsion. In some embodiments, the sub-micron precipitated barite has a particle size distribution such that at least 10% of particles in the sub-micron precipitated barite have a diameter below about 0.2 micron, at least 50% of the particles in the of the sub-micron precipitated barite have a diameter below about 0.3 micron and at least 90% of the particles in the sub-micron precipitated barite have a diameter below about 0.5 micron.

Abstract: A multifunctional optical film for enhancing light extraction includes a flexible substrate, a structured layer, and a backfill layer. The structured layer effectively uses microreplicated diffractive or scattering nanostructures located near enough to the light generation region to enable extraction of an evanescent wave from an organic light emitting diode (OLED) device. The backfill layer has a material having an index of refraction different from the index of refraction of the structured layer. The backfill layer also provides a planarizing layer over the structured layer in order to conform the light extraction film to a layer of an OLED lighting device such as solid state lighting devices or backlight units. The film may have additional layers added to or incorporated within it to an emissive surface in order to effect additional functionalities beyond improvement of light extraction efficiency.

Abstract: In one embodiment, a method of providing a nanowire semiconductor device is provided, in which the gate structure to the nanowire semiconductor device has a trapezoid shape. The method may include forming a trapezoid gate structure surrounding at least a portion of a circumference of a nanowire. The first portion of the trapezoid gate structure that is in direct contact with an upper surface of the nanowire has a first width and a second portion of the trapezoid gate structure that is in direct contact with a lower surface of the nanowire has a second width. The second width of the trapezoid gate structure is greater than the first width of the trapezoid gate structure. The exposed portions of the nanowire that are adjacent to the portion of the nanowire that the trapezoid gate structure is surrounding are then doped to provide source and drain regions.

Abstract: A contact structure includes a permanent antireflection coating formed on a substrate having contact pads. A patterned dielectric layer is formed on the antireflective coating. The patterned dielectric layer and the permanent antireflective coating form openings. The openings correspond with locations of the contact pads. Contact structures are formed in the openings to make electrical contact with the contacts pads such that the patterned dielectric layer and the permanent antireflective coating each have a conductively filled region forming the contact structures.

Abstract: A semiconductor structure, and method of forming a semiconductor structure, that includes a gate structure on a semiconductor substrate, in which the gate structure includes a gate conductor and a high-k gate dielectric layer. The high-k gate dielectric layer is in contact with the base of the gate conductor and is present on the sidewalls of the gate conductor for a dimension that is less than ¼ the gate structure's height. The semiconductor structure also includes source regions and drain regions present in the semiconductor substrate on opposing sides of the gate structure.

Abstract: A semiconductor device including a substrate having at least one nitride material lined isolation cavity; and a hafnium containing dielectric fill at least partially contained in and at least partially covering at least a portion of the at least one nitride lined isolation cavity.

Abstract: A method is provided for anisotropically etching semiconductor materials such as II-VI and III-V semiconductors. The method involves repeated cycles of plasma sputter etching of semiconductor material with a non-reactive gas through an etch mask, followed by passivation of the side walls by plasma polymerization using a polymer former. Using this procedure small pixels in down-converted light-emitting diode devices can be fabricated.

Abstract: A light extraction film having nanoparticles with engineered periodic structures. The light extraction film includes a substantially transparent substrate, low index one-dimensional or two-dimensional periodic structures on the substrate, and a high index planarizing backfill layer applied over the periodic structures. Light scattering nanoparticles are either applied in a layer over the periodic structures or included in the backfill layer.

Abstract: A method for processing a semiconductor fin structure is disclosed. The method includes thermal annealing a fin structure in an ambient containing an isotope of hydrogen. Following the thermal annealing step, the fin structure is etched in a crystal-orientation dependent, self-limiting, manner. The crystal-orientation dependent etch may be selected to be an aqueous solution containing ammonium hydroxide (NH4OH). The completed fin structure has smooth sidewalls and a uniform thickness profile. The fin structure sidewalls are {110} planes.

Abstract: Asymmetric FET devices, and a method for fabricating such asymmetric devices on a fin structure is disclosed. The fabrication method includes disposing over the fin a high-k dielectric layer followed by a threshold-modifying layer, performing an ion bombardment at a tilted angle which removes the threshold-modifying layer over one of the fin's side-surfaces. The completed FET devices will be asymmetric due to the threshold-modifying layer being present only in one of two devices on the side of the fin. In an alternate embodiment further asymmetries are introduced, again using tilted ion implantation, resulting in differing gate-conductor materials for the two FinFET devices on each side of the fin.

Abstract: Asymmetric FET devices, and a method for fabricating such asymmetric devices on a fin structure is disclosed. The fabrication method includes disposing over the fin a high-k dielectric layer followed by a threshold- modifying layer, performing an ion bombardment at a tilted angle which removes the threshold-modifying layer over one of the fin's side-surfaces. The completed FET devices will be asymmetric due to the threshold-modifying layer being present only in one of two devices on the side of the fin. In an alternate embodiment further asymmetries are introduced, again using tilted ion implantation, resulting in differing gate-conductor materials for the two FinFET devices on each side of the fin.

Abstract: Etched substrates, and particularly, light-absorbing etched substrates, and methods for making such substrates are described.

Abstract: Methods and compositions utilizing a drilling fluid comprising sub-micron precipitated barite having a weight average particle diameter below about 1 micron. Methods include a method comprising circulating a drilling fluid in a well bore, wherein the drilling fluid comprises: a carrier fluid; and a weighting agent that comprises sub-micron precipitated barite having a weight average particle diameter below about 1 micron are disclosed. In some embodiments, the drilling fluid may comprise an invert emulsion. In some embodiments, the sub-micron precipitated barite has a particle size distribution such that at least 10% of particles in the sub-micron precipitated barite have a diameter below about 0.2 micron, at least 50% of the particles in the of the sub-micron precipitated barite have a diameter below about 0.3 micron and at least 90% of the particles in the sub-micron precipitated barite have a diameter below about 0.5 micron.

Abstract: In one aspect, the invention is directed to a twist beam axle for a vehicle. The twist beam axle includes a twist beam and a reinforcement member. The twist beam has a longitudinal axis and has a generally concave cross-sectional shape. The reinforcement member extends longitudinally and is connected to the twist beam to form a longitudinally extending tubular form therewith. The twist beam has first and second side walls. At least one of the side walls extends outside of the tubular form. The tubular form has cross-sectional dimensions that are selected based on the vehicle on which the twist beam axle is to be used.

Abstract: A multifunctional optical film for enhancing light extraction includes a flexible substrate, a structured layer having nanoparticles of different sizes, and a backfill layer. The structured layer effectively uses microreplicated diffractive or scattering nanostructures located near enough to the light generation region to enable extraction of an evanescent wave from an organic light emitting diode (OLED) device. The backfill layer has a material having an index of refraction different from the index of refraction of the structured layer. The backfill layer also provides a planarizing layer over the structured layer in order to conform the light extraction film to a layer of an OLED display device. The film may have additional layers added to or incorporated within it to an emissive surface in order to effect additional functionalities beyond improvement of light extraction efficiency.

Abstract: Techniques and systems for providing capacity planning for data center services are disclosed herein. In some aspects, a multi-tier service is analyzed to determine a query response time (QRT) that can be used for resource planning or other service management reasons. The QRT may include a front end (FE) response time of FE servers and a back end (BE) response time of BE servers, where the BE servers are partitioned servers, and where the response times are based on various request rates from users. In various aspects, the QRT may include a network transmission time of data transmitted between an end user and each tier. In further aspects, the FE response time may be modeled using a single server queuing model while the BE response time may be modeled using a simulation or regression analysis.

Abstract: A semiconductor device is provided that in one embodiment includes at least one semiconductor fin structure atop a dielectric surface, the semiconductor fin structure including a channel region of a first conductivity type and source and drain regions of a second conductivity type, in which the source and drain regions are present at opposing ends of the semiconductor fin structure. A high-k gate dielectric layer having a thickness ranging from 1.0 nm to 5.0 nm is in direct contact with the channel of the semiconductor fin structure. At least one gate conductor layer is in direct contact with the high-k gate dielectric layer. A method of forming the aforementioned device is also provided.

Abstract: Embodiments of the application provide a method, system and device for triggering scheduling information reporting. The method including: determining, by a terminal, whether state transition occurs or an Enhanced Dedicated Channel (E-DCH) Radio Network Temporary Identifier (E-RNTI) changes; when determining the state transition occurs or the E-RNTI changes, adopting, by the terminal, reconfigured resources or a new E-RNTI to trigger the scheduling information reporting. By adopting the method for triggering the scheduling information reporting put forward by embodiments of the application, information about state transition at a terminal or changed E-RNTI may be reported to a Base Station (BS) timely, so as to guarantee normal communications between BS and terminal.