Abstract: A substrate-on-substrate structure and an electronic device including the same are provided, and the substrate-on-substrate structure includes: a first printed circuit board having a first side and a second side, opposite to the first side; a second printed circuit board disposed on the second side of the first printed circuit board, and having a first side connected to the second side of the first printed circuit board and a second side opposite to the first side connected to the second side of the first printed circuit board; a first structure disposed on the second side of the first printed circuit board, and disposed around the second printed circuit board; a second structure disposed on the second side of the second printed circuit board; and a third structure disposed on the first and second structures, and connected to each of the first and second structures.

Abstract: A backlight unit includes a light guide plate; a wavelength conversion member disposed on a surface of the light guide plate; and a housing which houses the wavelength conversion member and is fused to the light guide plate.

Abstract: An airbag control apparatus includes: an airbag, an airbag driver that deploys the airbag, and a processor that estimates a vehicle momentum and a crash progress degree based on a longitudinal acceleration and a vehicle speed upon a vehicle crash, determines deployment of the airbag based on the vehicle momentum and the crash progress degree and controls the airbag driver when the deployment of the airbag is determined.

Abstract: A gravure printing plate includes a convex portion and two or more polygonal cells partitioned by the convex portion, and including at least one protruding portion disposed at an edge of each of the at least two polygonal cells and extending toward a central portion of the corresponding cell therefrom.

Abstract: An organic light emitting diode display device includes a substrate having a plurality of subpixels which each have an emission region and a non-emission region defined along an edge of the emission region. A reflective barrier is disposed to correspond to the non-emission region and includes a reflective side surface. An overcoat layer is disposed on an upper portion of the reflective barrier. A light emitting diode includes a first electrode, an organic light emitting layer, and a second electrode, which are sequentially disposed on the overcoat layer. The reflective side surface of the reflective barrier is inversely tapered such that a width thereof is decreased in a traveling direction of light emitted from the organic light emitting layer.

Abstract: A method of manufacturing a micro-light emitting diode (LED)-based display, and a micro-LED-based display are provided. The method includes forming a micro-LED partitioned in the unit of a plurality of sub-pixels on a semiconductor substrate, planarizing the micro-LED by forming a planarization layer on at least a portion of the micro-LED, forming a via hole in the planarization layer, and integrating the micro-LED and a thin-film transistor (TFT) for an operation of the sub-pixels by arranging and depositing the TFT on the planarized micro-LED.

Abstract: Provided is a micro light emitting diode (LED) structure including an n-type semiconductor substrate layer, a light emitting structure layer formed on the n-type semiconductor substrate layer, and a p-type semiconductor layer formed on the light emitting structure layer, wherein the light emitting structure layer includes an arrangement of light emitting structures in which active layers including In and Ga are formed on tops thereof, wherein the light emitting structure layer forms at least three distinctive regions each including a single light emitting structure or a plurality of light emitting structures, the distinctive regions configured to emit light of at least two different wavelengths, the distinctive regions are controllable to emit light individually, and the distinctive regions are different in at least one of sizes of base faces, heights, and center-to-center distances of the lighting emitting structures of the regions.

Abstract: A chemical supply apparatus includes an evaporation unit disposed downstream of a chemical supply source to vaporize supplied chemical thereto, a filter unit disposed downstream of the evaporation unit, wherein the filter unit filters impurities in the vaporized chemical while the vaporized chemical passes through the filter unit, a liquefaction unit disposed downstream of the filter unit to liquefy the vaporized chemical, and a chemical storage tank disposed downstream of the liquefaction unit to store the liquefied chemical therein, wherein an electrode is disposed between the chemical supply source and the liquefaction unit, wherein the electrode electrically reacts with the chemical or particles in the chemical to change electrical properties of the chemical or the particles.

Abstract: A component mounting board includes first and second substrates, a connection substrate, an interposer, and an electronic component. The first substrate has first and second surfaces opposing each other, a first side surface between the first and second surfaces, and a first signal pattern. The second substrate is disposed on the first substrate, has third and fourth surfaces opposing each other and a second side surface between the third and fourth surfaces, and includes a second signal pattern. The connection substrate is bent to connect the first and second side surfaces, and the interposer is disposed between the first and third surfaces and electrically connects the first and second signal patterns. The electronic component is mounted on at least one of the first to fourth surfaces.

Abstract: A semiconductor memory device including first-first conductive lines on a substrate; second-first conductive lines on the first-first conductive lines; first contacts connected to the first-first conductive lines; and second contacts connected to the second-first conductive lines, wherein the first-first conductive lines protrude in a first direction beyond the second-first conductive lines; the first-first conductive lines include first regions having a first thickness, second regions having a second thickness, the second thickness being greater than the first thickness, and third regions having a third thickness, the third thickness being smaller than the first thickness and smaller than the second thickness, and the second regions of the first-first conductive lines are between the first regions of the first-first conductive lines and the third regions of the first-first conductive lines.

Abstract: A non-volatile memory structure can include a substrate extending horizontally and a filling insulating pattern extending vertically from the substrate. A plurality of active channel patterns can extend vertically from the substrate in a zig-zag pattern around a perimeter of the filling insulating pattern, where each of the active channel patterns having a respective non-circular shaped horizontal cross-section. A vertical stack of a plurality of gate lines can each extend horizontally around the filling insulating pattern and the plurality of active channel patterns.

Abstract: A semiconductor memory device may include a bit line extending in a first direction, a first conductive pattern extending in a second direction intersecting the first direction, a semiconductor pattern connecting the bit line and the first conductive pattern, a second conductive pattern including an insertion portion in the first conductive pattern, and a dielectric layer between the first conductive pattern and the second conductive pattern. The insertion portion of the second conductive pattern may have a width which increases as a distance from the semiconductor pattern increases.

Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The method including forming a mold structure by alternately stacking a plurality of first insulating layers and a plurality of second insulating layers on a substrate, patterning the mold structure to form a first trench that exposes a first inner sidewall of the mold structure, growing a vertical semiconductor layer in the first trench such that a vertical semiconductor layer covers the first inner sidewall, using the substrate as a seed to, patterning the mold structure to form a second trench that exposes a second inner sidewall of the mold structure, forming a plurality of recesses by selectively removing the second insulating layers from the mold structure through the second trench, and horizontally growing a plurality of horizontal semiconductor layers in corresponding recesses, using the vertical semiconductor layer as a seed may be provided.

Abstract: Disclosed are semiconductor memory devices and methods of fabricating the same. The semiconductor memory devices may include a plurality of layers sequentially stacked on a substrate in a vertical direction, each of the plurality of layers including a bit line extending in a first direction and a semiconductor pattern extending from the bit line in a second direction traversing the first direction, a gate electrode extending through the plurality of layers and including a vertical portion extending through the semiconductor patterns and a first horizontal portion extending from the vertical portion and facing a first surface of one of the semiconductor patterns, and a data storing element electrically connected to the one of the semiconductor patterns. The data storing element includes a first electrode electrically connected to the one of the semiconductor patterns, a second electrode on the first electrode, and a dielectric layer between the first and second electrodes.

Abstract: Integrated circuit devices and methods of forming the same are provided. The devices may include a substrate including a cell region and an extension region and conductive layers stacked on the cell region in a vertical direction. The conductive layers may extend onto the extension region and may have a stair-step structure on the extension region. The devices may also include vertical structures on the substrate. Each of the vertical structures may extend in the vertical direction, and the vertical structures may include a first vertical structure on the cell region and a second vertical structure on the extension region. The first vertical structure may extend through the conductive layers and may include a first channel layer, the second vertical structure may be in the stair-step structure and may include a second channel layer, and the second channel layer may be spaced apart from the substrate in the vertical direction.

Abstract: A three-dimensional semiconductor device includes: a peripheral circuit structure disposed on a lower substrate, and including an internal peripheral pad portion; an upper substrate disposed on the peripheral circuit structure; a stack structure disposed on the upper substrate, and including gate horizontal patterns; a vertical channel structure passing through the stack structure in a first region on the upper substrate; a first vertical support structure passing through the stack structure in a second region on the upper substrate; and an internal peripheral contact structure passing through the stack structure and the upper substrate, and electrically connected to the internal peripheral pad portion, wherein an upper surface of the first vertical support structure is disposed on a different level from an upper surface of the vertical channel structure, and is coplanar with an upper surface of the internal peripheral contact structure.

Abstract: The present invention relates to an Agathobaculum sp. strain having prophylactic or therapeutic effects on autism spectrum disorders, and use thereof. When the intestinal microorganism Agathobaculum sp. strain of the present invention was orally administered to valproic acid (VPA)-induced autism model mice and BTBR autism model mice, the effects of remarkably improving autism spectrum disorders including repetitive behaviors, hyperactivity, social deficiency and cognitive/memory dysfunction of the mice were observed, as compared with a non-treated control. Accordingly, it may be usefully applied to foods, drugs, or feeds for preventing or treating autism spectrum disorders, and thus is very useful in the relevant industries.

Abstract: The inventive concept relates to an apparatus for treating a substrate. The apparatus includes a support unit that supports the substrate and a nozzle unit having a nozzle that dispenses a chemical onto the substrate, in which the nozzle is connected with a ground line, and a variable resistor is provided on the ground line.

Abstract: According to an aspect of the inventive concept of the disclosure, an evolved radio access network comprises: a plurality of signal sources supporting any one of heterogeneous mobile communication technology standards and data services, a hub connected to a plurality of signal sources, and a plurality of remote units connected through a hub and a transmission network.

Abstract: In a method for coating on a surface of a medical PEEK material with titanium to have a microporous structure, titanium is coated on a surface of polyether ether ketone (PEEK) via magnetron sputtering. The surface of the titanium coated on the surface of PEEK is polished via an electromagnetic polishing apparatus. A thin-film with titanium dioxide (TiO2) having a microporous structure is formed on the polished surface of the titanium via an anodic oxidation treatment.