Abstract: A semiconductor device and a method for fabricating the semiconductor device are provided. The method includes providing a base substrate including a first region and a second region; and forming a first doped region in the first region, and a second doped region in the second region. The second doped region is doped with blocking ions. The method also includes forming a first metal layer on a surface of the first doped region and on a surface of the second doped region; and forming a second metal layer on a surface of the first metal layer. The second metal layer is made of a material different from the first metal layer. Further, the method includes forming a first metal silicide layer and a second metal silicide layer by performing an annealing process. The blocking ions block atoms of the second metal layer from diffusing into the second metal silicide layer.

Abstract: A switching power converter is provided that cycles a power switch during a group pulse mode of operation to produce a train of pulses within a group period responsive to a control voltage being within a group mode control voltage range. Depending upon the control voltage, the number of pulses in each train of pulses is varied to provide a linear power delivery to the load.

Abstract: A fusion welding isolation mechanism for an operating mechanism of a circuit breaker is provided. The operating mechanism of circuit breaker includes: a tripping component, a left side, a right side plate, a latch, a half shaft, a lever, and a main shaft. The tripping component, the latch, and the lever are mounted between the left side plate and the right side plate. The half shaft and the main shaft penetrate through the left side plate and the right side plate, and extend out of the left side plate and the right side plate. The tripping component, the latch, the half shaft, the lever, and the main shaft move in linkage. The lever and the main shaft are provided with isolation devices for preventing an operation handle from an opening operation when a moving contact is subject to fusion welding.

Abstract: A semiconductor device includes a substrate structure. The Substrate structure includes a substrate, a plurality of fins each protruding from the substrate structure, a germanium layer on a top surface of the fins, spacers on opposite sides of the germanium layer, an oxide layer on a surface of the germanium layer between the spacers, the oxide layer comprising silicon and germanium, a high-k dielectric layer on the oxide layer and on inner sidewalls of the spacers, and a gate electrode on the high-k dielectric layer.

Abstract: A method and system for compensating for a doubly selective channel, and a related apparatus are applied to the field of communications technologies. In embodiments of the present invention, a receive end obtains, based on a minimum mean square error between a transmit pilot sequence and a receive pilot sequence, an optimal parameter used in a process of channel compensation and signal modulation, that is, a modulation order and a channel compensation parameter such as a channel compensation matrix. Therefore, according to the embodiments of the present invention, an optimization method is used to apply a banded equalization channel compensation method and a partial FFT transform to a communications system, thereby improving system performance.

Abstract: Provided are a method, apparatus and system for acquiring a codebook, the method including: generating, by a base station, a codebook corresponding to Nt ports and r layers transmission according to a first preset condition, the codebook being for feeding back a preceding matrix, the first preset condition being a common set condition between the base station and a terminal, Nt being a port number, and r being a transmission layer number; determining, by the base station, a signaling indication method for selecting a codebook subset corresponding to the codebook according to a second preset condition; and acquiring, by the base station, Codebook Subset Selection (CSS) signaling for selecting the codebook subset correspondingly according to the signaling indication method, and notifying the selected codebook subset to a terminal through the CSS signaling.

Abstract: Semiconductor device and fabrication method are provided. The method includes: providing a base substrate; forming gate structures on the base substrate; forming source/drain doped regions in the base substrate on sides of each gate structure, where the source/drain doped regions have recessed top surfaces and are doped with source/drain ions; and doping into the recessed top surfaces of the source/drain doped regions with contact ions to form contact doped regions in top portions of the source/drain doped regions, where the contact ions have a conductivity type same as the source/drain ions.

Abstract: Information sending, information determining and relationship determining methods and devices are provided. According to the information sending method, a base station sends M parameter sets via high-layer signaling, wherein M>=1, M is a positive integer, each parameter set includes quasi-co-location Non-Zero Power (NZP) Channel State Information Reference Signal (CSI-RS) indication information, and the quasi-co-location NZP CSI-RS indication information is used by a terminal to acquire a large-scale characteristic of a channel; and when M>1, the base station indicates, via a physical-layer control signaling, parameter set selection information of a subframe on which the physical-layer control signaling is sent.

Abstract: An information notification method, comprising: obtaining a plurality of parameter sets, the parameter sets comprising one or more types of CSI parameter used for indicating a channel state information (CSI) measurement and/or feedback; sending a parameter set within the plurality of parameter sets which corresponds to a CSI process to a terminal.

Abstract: The present invention is directed to processes for preparing beta 3 agonists of Formula (I) and Formula (II) and their intermediates. The beta 3 agonists are useful in the treatment of certain disorders, including overactive bladder, urinary incontinence, and urinary urgency.

Abstract: A method for fabricating a Fin-FET includes forming a plurality of fin structures, an isolation layer, and an interlayer dielectric layer on an NMOS region of a substrate, forming a first opening in the interlayer dielectric layer to expose a portion of the fin structures. A region adjacent to a joint between a bottom surface and a sidewall surface of the first opening is a corner region. The method includes forming a high-k dielectric layer on the bottom and the sidewall surfaces of the first opening, a barrier layer on the high-k dielectric layer, and an N-type work function layer containing aluminum ions on the barrier layer. The method further includes performing a back-flow annealing process such that the portion of N-type work function layer at the corner region is thickened and contains diffused aluminum ions. Finally, the method includes forming a metal layer on the N-type work function layer.

Abstract: In some aspects, the disclosure is directed to methods and systems for coexistence management. A first access point operating in an unlicensed frequency band using a first RAT receives, from a second access point operating in the unlicensed frequency band using a second RAT, information regarding operation of the second access point in the unlicensed frequency band. It is determined, using the received information, that the first access point or the second access point is using a first share of the unlicensed frequency band that is below a predetermined threshold, indicating an imbalance of usage between the first RAT and the second RAT. A transmission parameter of the first access point for operating in the unlicensed frequency band using the first RAT is adjusted according to the determination.

Abstract: An output power distribution module and a power distribution cabinet belong to the field of power electronics technologies. Input copper bars providing a main shunt function for the output power distribution module are integrated to the output power distribution module, thereby reducing a quantity of used copper bars, reducing costs, simplifying assembling steps, and improving assembling efficiency.

Abstract: A double-station wheel burr removing device is provided, comprising clamping drive systems, lifting drive systems, a left burr brushing system, a right burr brushing system, a rotary switching system and the like. The double-station wheel burr removing device in use can simultaneously remove burrs on two wheels having different heights and different diameters at the end face of the upper rim, the valve hole, the lateral cutting position of the upper rim and the riser, so the production efficiency is very high; and simultaneously, the device has the characteristics of high automation degree, advanced process, strong generality, safety and stability.

Abstract: Disclosed are a method and an apparatus for configuring a channel state information-reference signal (CSI-RS). The method comprises: a base station determines configuration information of a CSI-RS; the base station generates signaling comprising the configuration information of the CSI-RS; and the base station transmits the signaling comprising the configuration information of the CSI-RS. The configuration information comprises: a port quantity, pilot resource pattern information, and a multiplex mode between CSI-RS ports, when the port quantity is greater than 1, the CSI-RS has M candidate pilot resource patterns, where M is an integer greater than 1. The method and apparatus for configuring a CS I-RS disclosed in embodiments of the present invention can support transmission of a CSI-RS of which the port quantity is greater than 8.

Abstract: The present disclosure provides test structures, fabrication methods thereof and test methods thereof. An exemplary test structure includes a substrate having a to-be-tested region having at least one fin and a peripheral region having at least one fin surrounding the to-be-tested region; an insulation layer covering portions of side surfaces of the fins; at least one first gate structure covering side and top surfaces of the fin in the to-be-tested region; second gate structures covering side and top surfaces of the fins in the peripheral region; source/drain regions formed in portions of the fins between adjacent second gate structures and portions of the fins between the first gate structure and adjacent second gate structures; and a plurality of first conductive structures formed between adjacent second gate structures in the peripheral region. The plurality of first conductive structures cross over and are on source/drain regions of at least two fins.

Abstract: A system for layered local caching of downstream shared media in a hierarchical tree network arrangement includes a first network node on a first distribution network having a first caching controller. The first network node configured to store a video segment transmitted on the first distribution network based on a first instruction received by the first caching controller from a central caching controller communicatively coupled to the first distribution network. The central caching controller is located upstream from the first network node. The system includes a second network node on a second distribution network having a second caching controller and communicatively coupled to the first network node. The second network node configured to store a video segment transmitted on the second distribution network based on a second instruction received by the second caching controller from the first caching controller.

Abstract: An embodiment of the present document discloses a flow table multi-leveling method, a multi-level flow table processing method and device; wherein the multi-leveling method includes: generating a second flow table, separating a target logic rule in a first flow table and forwarding actions corresponding the target logic rule to the second flow table, to make the first flow table and the second flow table orthogonal to form a ternary content addressable memory (TCAM) flow table; wherein the first flow table saves a plurality of logic rules and all forwarding actions corresponding to the plurality of logic rules respectively; continuously generating new flow tables in the same manner of generating the second flow table, until the number of flow tables reaches a preset upper limit.

Abstract: The present invention relates to controlled cooling in manufacture of steel plate, and in particular, to an on-line cooling system for controlled rolling with an inter-pass cooling process, which comprises a rolling mill and on-line cooling equipment. The cooling equipment is accessorily arranged on the exit of the rolling mill, so that the rolling mill and the cooling equipment are combined. One rolling mill and one set of on-line cooling equipment are considered a cooling group, and several such groups are connected in series, so the steel plate can be cooled in any rolling pass. In this invention, both the cooling system and the water supply system are arranged on the main frame, and the rolling process and the cooling process are synchronized by using inter-pass cooling. Consequently, satisfied rolling effect in the condition of a temperature gradient along the thickness direction, grain refinement at the surface and drastic strength improvement without sacrificing toughness are achieved.

Abstract: The present invention relates to an optimized fermentation process of coenzyme Q10, particularly to a fermentation process of coenzyme Q10 via flow feeding based on cooperative control of changes of online oxygen consumption rate and conductivity. During the fermentation process of coenzyme Q10 production strains, the oxygen consumption rate is controlled between 30-150 mmol/L·h and the conductivity is maintained between 3.0-30.0 ms/cm via flow feeding, so as to facilitate strain growth and the start of coenzyme Q10 synthesis and accumulation. The present invention can substantially increase output of coenzyme Q10 and greatly reduce the production cost with simple process control and strong operability, thus being applicable to large-scale industrial production.