Abstract: Examples described herein relate to enhancing data communication performance in a wireless communication network including a first subscription associated with a first radio access technology (RAT) and a second subscription associated with a second RAT, where the wireless communication device uses a same radio frequency (RF) resource to communicate over both the first RAT and the second RAT. The first RAT is used, in part, for data operations while the second RAT is used, in part, for voice operations. During idle state voice operations, the RF resource is reallocated from performing data operations to performing idle state voice operations, causing interruptions in the data operations. The wireless communication device adjusts at least one or a duration and an occurrence of the idle state voice operations to reduce the impact on the data operations.

Abstract: A universal serial bus (USB) charger provides power to a client device. A USB connector interfaces with a client device and receives a request for the output voltage of the USB charger to be at a specific value. If the requested voltage level is lower than the current output voltage level, the output voltage level is set to the requested level and a bleeder circuit is enabled to discharge the output capacitor of the USB charger.

Abstract: A vibrating motor and an electronic device are disclosed. The vibrating motor comprises a housing formed by an upper housing and a lower housing. A slider portion and a stator portion are accommodated in a cavity enclosed by the housing. The slider portion comprises magnets, spring sheets and a mass block. The mass block has accommodating grooves matching the external contour of the magnets, and the magnets are accommodated in the accommodating grooves. The mass block is connected to the upper housing via the spring sheets, and is suspended inside the housing. The stator portion comprises coils and a basin frame that is made of a magnetic material The basin frame is fixed on the lower housing, and has accommodating structures matching the external contour of the coils. The coils are embedded in the accommodating structures of the basin frame.

Abstract: The present invention relates to the new use of antiparasitic agents, such as ivermectin, abamectin/avermectin, doramectin and so on, and the design method of the derivatives for the new use. The said compounds including macrolide abamectin/avermectin, ivermectin, doramectin and the derivatives thereof, may be used in the manufacture of a medicament for use in treating metabolic related diseases in a mammal, such as hyperglycemia, insulin resistance, hypertriglyceridemia, hypercholesterolemia, diabetes, obesity, etc, and Famesoid X receptor mediated diseases, such as cholestasia, gallstone, non alcohol fatty liver disease, atherosclerosis, inflammation, cancer, etc.

Abstract: A method for forming a transistor is provided. The method includes providing a semiconductor substrate, and forming a dielectric layer on the semiconductor substrate. The dielectric layer has a gate structure recess. The method also includes forming a work function layer on a bottom and sidewalls of the gate structure recess; performing an ion implantation on the work function layer; and forming a gate layer on the work function layer after the ion implantation.

Abstract: Systems and methods to deliver streaming video over a hybrid network are provided herein. An adjusted bitrate to transmit video from a server to a client is determined in response to a fast-forward or rewind request. Frames from a video are selectively transmitted to accommodate for the adjusted bitrate based and a bitrate of a connection between the server and the client.

Abstract: A method for fabricating a Fin-FET device includes forming fin structures with each having a gate structure on the top in both P-type regions and N-type regions, forming a first epitaxial layer on each fin structure on both sides of the gate structure in the P-type regions, forming a P-type doped first covering layer on each first epitaxial layer, forming a second epitaxial layer on each fin structure on both sides of the gate structure in the N-type regions, forming an N-type doped second covering layer on each second epitaxial layer, and forming a titanium-containing silicification layer on the first covering layer and the second covering layer. The method further includes performing a first annealing process to let titanium ions in the silicification layer diffuse into the first covering layer to form a first metal silicide layer and into the second covering layer to form a second metal silicide layer.

Abstract: An electrical submersible well pump assembly includes a rotary pump and a motor. An inner rotor is coupled to the motor shaft. The inner rotor has steel discs stacked together with end caps at each end. The discs have apertures that align to define axially extending slots. Each of the slots has a closed outer wall spaced radially inward from an outer diameter surface of the inner rotor. Inner rotor magnets are located within the slots. Continuous open and thin gaps between rotating components act as hydrodynamic bearings. Damper bars extend axially at points between the outer walls of the slots and the outer diameter surface of the inner rotor. An outer rotor has a bore that receives the inner rotor, the outer rotor being operatively coupled to the pump shaft for rotation therewith. Outer rotor magnets are mounted to the bore of outer rotor.

Abstract: At least one application in a computing environment is executed and one or more performance metrics of the application are measured. The measured performance metrics are analyzed and an operational performance regression is detected. The detected operational performance regression is correlated with one or more recorded changes and the correlated changes are identified as a cause of the operational performance regression. The elements of the computing environment are alerted in accordance with the identified changes to adjust operational performance.

Abstract: The present invention discloses a hair curling hammer and an operation principle thereof. The hair curling hammer is made up of a handle housing component, a control member, a heating member, a power member, a hair curling member and a hair care member. The handle housing component comprises a first handle housing and a second handle housing, the control member comprises a button, a decoration fixing mount, a button divider and a PCB board. The power member, heating member, hair curling member and hair care member are arranged in the working part of the hair curling hammer together. The invention is adjustable in temperature, circling number of curling hair, case hardening time, and turning, which meets the various requirements of the customer; improves the hair curling member, the operability and reliability of curling hair greatly; and three hair combing brushes are added in to make the progress of curling hair more smooth.

Abstract: A method for manufacturing a semiconductor device includes providing a semiconductor structure having a substrate structure, multiple fins having a germanium layer, a dummy gate structure including sequentially a hardmask, a dummy gate, a dummy gate insulating material on the germanium layer, and spacers on opposite sides of the dummy gate structure and on a portion of the germanium layer. The method also includes forming an interlayer dielectric layer on the substrate structure covering the dummy gate structure, planarizing the interlayer dielectric layer to expose a surface of the dummy gate, removing the dummy gate and the dummy gate insulating material to expose a surface of the germanium layer, performing a silane impregnation process on the exposed surface of the germanium layer to introduce silicon to the germanium layer, and performing an oxidation process on the germanium layer to form an oxide layer comprising silicon and germanium.

Abstract: A semiconductor structure and a method for fabricating the semiconductor structure are provided. The method includes providing a base substrate, and forming an interlayer dielectric layer on the base substrate and having an opening exposing surface portions of the base substrate. The method also includes forming a stacked structure on a bottom and sidewall of the opening and on a top of the interlayer dielectric layer. In addition, the method includes removing at least a first portion of the stacked structure from the top of the interlayer dielectric layer. Further, the method includes performing an annealing treatment on the base substrate, and forming a gate structure by filling the opening with a metal layer.

Abstract: A semiconductor device includes a base substrate including an NMOS region and a PMOS region. The PMOS region includes a first P-type region and a second P-type region. The semiconductor device also includes an interlayer dielectric layer, a gate structure formed through the interlayer dielectric layer and including an N-type region gate structure formed in the NMOS region, a first gate structure formed in the first P-type region and connected to the N-type region gate structure, and a second gate structure formed in the second P-type region and connected to the first gate structure. The direction from the N-type region gate structure to the second gate structure is an extending direction of the gate structure, and along a direction perpendicular to the extending direction of the gate structure, the width of the first gate structure is larger than the width of the second gate structure.

Abstract: Testing structures, and their fabrication methods and testing methods are provided. An exemplary testing structure includes a base substrate containing a well region; a first doped epitaxial region in the well region and having a doping type same as a doping type of the well region; a dielectric layer on the base substrate and covering the well region and the first doped epitaxial region; a first contact plug passing through the dielectric layer and electrically connected with the first well region; and a second contact plug and a third contact plug. The second contact plug and the third contact plug pass through the dielectric layer and electrically connected with the first doped epitaxial region. The second contact plug is independent from the third contact plug and between the first contact plug and the third contact plug.

Abstract: Provided are a computer program product, system, and method for generating a view for a schema. A schema provides a definition of elements, wherein at least one of the elements comprises a recursive element of a recursive data type, wherein the recursive data type allows for instances of the recursive element to include instances of that same recursive data type at different levels in a hierarchy. Indication is received to transform the recursive types to non-recursive structures. A view for the schema is generated including information on the indication to transform the recursive types to non-recursive structure, wherein the processing of the data defined by the view causes a parser to generate a structured element for each instance of the recursive element in schema data being parsed, wherein the generated structured element includes a unique identifier of the instance of the recursive element.

Abstract: An electronic module is provided. The electronic module includes a bracket, a first electronic component and a second electronic component. The bracket includes a housing and a barrier rib, and a conductive paste is coated on the barrier rib. The first electronic component and a second electronic component, are accommodated in the bracket and spaced from each other by the barrier rib, and electrically connected to each other through the conductive paste. A terminal device and a bracket are also provided.

Abstract: A dual-camera module assembly includes a first flexible printed circuit (FPC), a second FPC, a first camera module and a second camera module. The first FPC includes a first body and a first connecting end, the first body being connected to the first camera module. The second FPC includes a second body, and an extension portion and a second connecting end sequentially extending from the second body, the second body being connected to the second camera module, the extension portion and the first body are arranged in a superposition manner. The first connecting end and the second connecting end are connected to a main circuit board. A smallest one of distances from the first connecting end to an antenna clearance zone of the main circuit board and distances from the second connecting end to the antenna clearance zone is greater than or equal to a predetermined value.

Abstract: A bracket assembly, a functional component, and a mobile terminal are provided. The bracket assembly configured to fix an electronic component and conduct a ground electrode includes a metal support and a plurality of conductive members. The metal support includes a mounting part and a carrier part surrounding the mounting part. The mounting part is configured to fix the electronic component. The carrier part includes a plurality of ground parts arranged circumferentially about the mounting part at intervals. Each of the conductive members is connected to a corresponding one of the ground parts and configured to conduct a corresponding one of the ground parts and the ground electrode.

Abstract: A bracket assembly is provided. The bracket assembly includes a metal bracket and a spring module. The metal bracket is configured to support an electronic component in a mobile terminal. The spring module includes a fixing portion, a pressing portion, and a elastic portion; the fixing portion is fixed in the mobile terminal and grounded, and the elastic portion connects the pressing portion and the fixing portion; the elastic portion is configured to provide a restoring force to the pressing portion, and press the pressing portion to be in contact with the metal bracket. A camera module and a mobile terminal are also provided.