Abstract: Structures for the integration of a vertical field-effect transistor and a saddle fin-type field-effect transistor into an integrated circuit, as well as methods of integrating a vertical field-effect transistor and a saddle fin-type field-effect transistor into an integrated circuit. A trench isolation is formed in a substrate that defines a first device region and a second device region. A first semiconductor fin is formed that projects from the first device region and a second semiconductor fin is formed that projects from the second device region. A vertical field-effect transistor is formed using the first semiconductor fin, and a saddle fin-type field-effect transistor is formed using the second semiconductor fin. A top surface of the trench isolation in the second device region adjacent to the second semiconductor fin is recessed relative to the top surface of the trench isolation in the first device region adjacent to the first semiconductor fin.

Abstract: The present invention provides a method and apparatus for deterring pets or other animals from biting or chewing into medication containers. In some embodiments, the invention consists of two or more conductive metal sheets or strips in layers around the side of the container, which are wired to complete a circuit when pressed by the force of an animal's bite or touched by an animal's tongue. In some embodiments, the sheets or strips are spaced or held apart so that a normal human grip would not have sufficient force to complete the circuit. In some embodiments, the device slides onto the medication container with a friction fit, and is removable for use on future containers. In some embodiments, the circuit includes a battery-powered alarm to deter the animal. In other embodiments, the circuit delivers a mild electrical shock to the animal's mouth or tongue through the metal strips or sheets.

Abstract: Disclosed is an apparatus and method for processing information of multiple cameras.

Abstract: A method of forming a thick EG polysilicon over the FG and resulting device are provided. Embodiments include forming a CG on a substrate; forming an STI between a logic region and the CG; forming a polysilicon EG through the CG and CG HM; forming a polysilicon structure over the logic and STI; forming and overfilling with polysilicon a WL trench through the CG and CG HM, between the EG and STI; forming a buffer oxide in the polysilicon structure over the logic region and part of the STI; recessing the buffer oxide and etching back the polysilicon overfill down the CG HM; forming a second buffer oxide over the EG and logic region; recessing the WL polysilicon; removing the first and second buffer oxides; forming a mask with an opening over a center of the WL, the STI, and a majority of the logic region; and removing exposed polysilicon.

Abstract: A transmission method of a mobile station moved in a region of a cell provided by a base station and providing a wireless LAN (local area network). The mobile station receives a plurality of uplink packet flows from a terminal. The mobile station distributes the plurality of uplink packet flows to a plurality of carrier components. Further, the mobile station transmits the plurality of uplink packet flows to the base station through the plurality of carrier components.

Abstract: An integrated circuit with an MOS transistor abutting field oxide and a gate structure on the field oxide adjacent to the MOS transistor and a gap between an epitaxial source/drain and the field oxide is formed with a silicon dioxide-based gap filler in the gap. Metal silicide is formed on the exposed epitaxial source/drain region. A CESL is formed over the integrated circuit and a PMD layer is formed over the CESL. A contact is formed through the PMD layer and CESL to make an electrical connection to the metal silicide on the epitaxial source/drain region.

Abstract: Disclosed is a hair conditioning composition comprising: a cationic surfactant; a high melting point fatty compound having a melting point of 25° C. or higher; a material having a refractive index of from about 1.30 to about 1.70; and an aqueous carrier, wherein a composition has a transmittance of at least about 0.5%. The composition is further specified by either: (i) the material is a polyol having at least 3 hydroxyl groups and the polyol is contained at a level of above 30% to about 80% by weight of the composition; or (ii) the cationic surfactant is a salt of a mono-long alkyl amine and an acid. The compositions provides both translucent appearance and conditioning benefits, especially conditioning benefit on wet hair when used as a rinse-off conditioner and/or spreadability on hair.

Abstract: Disclosed are a data driving device and a display device including the same. The display device may include: a timing controller configured to include lock fail data in an input signal and transmit the input signal in each preset period; and a source driver configured to recover the lock fail data from the input signal, and reset an internal circuit in response to the recovered lock fail data.

Abstract: A converter includes a phase locked loop (“PLL”) unit which outputs a first frequency signal having a first frequency during a first period of one frame and to output a second frequency signal modulated to have a frequency corresponding to a pattern of an image signal during a second period other than the first period, a pulse width modulation (“PWM”) signal generator which generates a PWM signal according to the frequency of the frequency signal outputted from the PLL unit, and a voltage generator which outputs a driving voltage obtained by modulating an input voltage in response to the PWM signal to a voltage output terminal.

Abstract: At least one method, apparatus and system are disclosed for forming a fin field effect transistor (finFET) having doping region self-aligned with a fin reveal position. A plurality of fins of a transistor is formed. A nitride cap layer on the plurality of fins is formed. An N-type doped region in a first portion of the plurality of fins. A P-type doped region in a second portion of the plurality of fins. A shallow trench isolation (STI) fill process for depositing an STI material on the plurality of fins. A fin reveal process for removing the STI material to a predetermined level. A cap strip process for removing the nitride cap layer for forming a fin reveal position that is self-aligned with the P-type and N-type doped regions.

Abstract: Provided is a method for generating a foreground in a foreground generating apparatus, the method including: extracting a plurality of foregrounds by applying a plurality of background models to an image, the plurality of background models having different ranges of a pixel variance value; generating an intersection foreground based on an intersection region among the extracted plurality of foregrounds; generating a union foreground based on a union region among the extracted plurality of foregrounds; and generating a final foreground based on the intersection foreground and the union foreground.

Abstract: At least one method, apparatus and system are disclosed for forming a fin field effect transistor (finFET) having doping region self-aligned with a fin reveal position. A plurality of fins of a transistor is formed. A nitride cap layer on the plurality of fins is formed. An N-type doped region in a first portion of the plurality of fins. A P-type doped region in a second portion of the plurality of fins. A shallow trench isolation (STI) fill process for depositing an STI material on the plurality of fins. A fin reveal process for removing the STI material to a predetermined level. A cap strip process for removing the nitride cap layer for forming a fin reveal position that is self-aligned with the P-type and N-type doped regions.

Abstract: Methods form structures to include a first pair of complementary transistors (having first and second transistors) and a second pair of complementary transistors (having third and fourth transistors). An active area of the first transistor contacts an active area of the second transistor along a first common edge that is straight, and an active area of the third transistor contacts an active area of the fourth transistor along a second common edge that is straight and parallel to the first common edge. The active area of the second transistor has a third edge, opposite the first common edge, that has a non-linear shape, and the active area of the third transistor has a fourth edge, opposite the second common edge, that has the same non-linear shape. The non-linear shape of the third edge faces and is inverted relative to the non-linear shape of the fourth edge.

Abstract: Integrated circuits, nonvolatile memory (NVM) structures, and methods for fabricating integrated circuits with NVM structures are provided. An exemplary integrated circuit includes a substrate and a dual-bit NVM structure overlying the substrate. The dual-bit NVM structure includes primary, first adjacent and second adjacent fin structures laterally extending in parallel over the substrate. The primary fin structure includes source, channel and drain regions. Each adjacent fin structure includes a program/erase gate. The dual-bit NVM structure further includes a first floating gate located between the channel region of the primary fin structure and the first adjacent fin structure and a second floating gate located between the channel region of the primary fin structure and the second adjacent fin structure. Also, the dual-bit NVM structure includes a control gate adjacent the primary fin structure.

Abstract: Methods for forming a structure that includes vertical-transport field-effect transistors and structures that include vertical-transport field-effect transistors. A first semiconductor fin is separated from a second semiconductor fin by a gap. A gate stack is conformally deposited that extends across the first semiconductor fin, the second semiconductor fin, and the gap. A section of the gate stack is located in the gap. A gate strap layer is formed in the gap on the section of the gate stack. The gate stack is patterned to form a first gate electrode associated with the first semiconductor fin and a second gate electrode associated with the second semiconductor fin. The gate strap layer masks the section of the gate stack when the gate stack is patterned. The first gate electrode is connected with the second gate electrode by the gate strap layer and the section of the gate stack.

Abstract: At least one method, apparatus and system are disclosed for forming a fin field effect transistor (finFET) having an oxide level in a fin array region within a predetermined height of the oxide level of a field region. A first oxide process is performed for controlling a first oxide recess level in a field region adjacent to a fin array region comprising a plurality of fins in a finFET device. The first oxide process comprises depositing an oxide layer over the field region and the fin array region and performing an oxide recess process to bring the oxide layer to the first oxide recess level in the field region. A second oxide process is performed for controlling a second oxide recess level in the fin array region. The second oxide process comprises isolating the fin array region, depositing oxide material, and performing an oxide recess process to bring the oxide level in the fin array region to the second oxide recess level.

Abstract: Provided is a parallax minimization stitching method and apparatus using control points in an overlapping region. A parallax minimization stitching method may include defining a plurality of control points in an overlapping region of a first image and a second image received from a plurality of cameras, performing a first geometric correction by applying a homography to the control points, defining a plurality of patches based on the control points, and performing a second geometric correction by mapping the patches.

Abstract: Formation of a bottom junction in vertical FET devices may include, for instance, providing an intermediate semiconductor structure comprising a semiconductor substrate, a fin disposed on the semiconductor substrate. The fin has a top surface, spaced-apart vertical sides. A mask is disposed over the top surface of the fin, and at least one is disposed over the vertical sides of the fin. Portions of the substrate are removed to define spaced-apart recesses each extending below a respective one of the spacers. Semiconductor material is grown, such as epitaxially grown, in the recesses.

Abstract: Provided herein are a memory device and a method of operating the same. The memory device includes a memory block including a plurality of stacked sub-memory blocks, peripheral circuits configured to perform program, read and erase operations on the memory block or on a block selected from among the sub-memory blocks, and control logic configured to control the peripheral circuits so that, during a read operation on the memory block, if a block on which a partial erase operation has been performed is not present among the sub-memory blocks, voltages to be used for the read operation are set and so that, if a block on which the partial erase operation has been performed is present among the sub-memory blocks, the voltages to be used for the read operation are varied depending on a position of a sub-memory block that is a target of the read operation.

Abstract: Embodiments of the present invention provide methods and systems for co-integrating a short-channel vertical transistor and a long-channel transistor. One method may include: from a starting substrate, forming a wide fin, wherein the wide fin comprises a wide active region; depositing a recess mask over a top surface of the starting substrate; recessing a long channel based on the deposited recess mask; depositing a gate electrode and a gate material, to form a gate structure; and forming SD contacts in an SD region of the long-channel transistor.