Abstract: Described herein is a technology for facilitating remote monitoring, in accordance with one aspect, image data and corresponding true color data of a region of interest is received by a computer system from a mobile device. The computer system may integrate the image data and the true color data to generate normalized true color data. The normalized true color data may then be mapped to device independent color image data. A recommendation may then be sent based on the device-independent color image data.

Abstract: A method of reducing current leakage in three-dimensional semiconductor devices due to short-channel effects includes providing a starting semiconductor structure, the structure including a semiconductor substrate having a n-type device region and a p-type device region, the p-type device region including an upper layer of p-type semiconductor material, a hard mask layer over both regions, and a mask over the structure for patterning at least one fin in each region. The method further includes creating partial fin(s) in each region from the starting semiconductor structure, creating a conformal liner over the structure, creating a punch-through-stop (PTS) in each region, causing each PTS to diffuse across a top portion of the substrate, and creating full fin(s) in each region from the partial fin(s).

Abstract: Methods for self-aligned gate-first VFETs using gate-spacer recess and the resulting devices are disclosed.

Abstract: Forming a first sidewall spacer adjacent a vertically oriented channel semiconductor structure (“VCS structure’) and adjacent a cap layer, performing at least one planarization process so as to planarize an insulating material and expose an upper surface of the cap layer and an upper surface of the first spacer and removing a portion of the first spacer and an entirety of the cap layer so as to thereby expose an upper surface of the VCS structure and define a spacer/contact cavity above the VCS structure and the first spacer. The method also includes forming a second spacer in the spacer/contact cavity, forming a top source/drain region in the VCS structure and forming a top source/drain contact within the spacer/contact cavity that is conductively coupled to the top source/drain region, wherein the conductive contact physically contacts the second spacer in the spacer/contact cavity.

Abstract: One illustrative method disclosed herein includes, among other things, forming a vertically oriented channel semiconductor structure, forming a layer of a bottom spacer material around the vertically oriented channel semiconductor structure and forming a sacrificial material layer above the layer of a bottom spacer material. In this example, the method further includes forming a sidewall spacer adjacent the vertically oriented channel semiconductor structure and above an upper surface of the sacrificial material layer, removing the sacrificial material layer so as to define a replacement gate cavity between a bottom surface of the sidewall spacer and the layer of a bottom spacer material, and forming a replacement gate structure in the replacement gate cavity.

Abstract: A display device includes a display unit including a light emitting device, data and gate driver for respectively applying data and gate voltages to the display unit, and a signal controller for transmitting, to the data driver, image data having a clock embedded therein. The data driver recovers a first internal reference clock during a low period of a first frame control signal, using the image data having the clock embedded therein, compares the frequency of the recovered first internal reference clock with the frequency of a previously stored reference clock, when the frequency of the recovered first internal reference clock is within an error range of the frequency of the previously stored reference clock, outputs the recovered first internal reference clock and receives a second frame control signal, and when the second frame control signal corresponds to a CDR unit operating condition, recovers a second internal reference clock.

Abstract: An image correcting unit including: a data converting unit which receives image data, and generates display data by converting respective grayscale values which are included in the image data to high pixel data and low pixel data; and a white pixel detecting unit which detects image data lines which include not less than a first number of white grayscale values from the image data, and outputs a conversion signal when not less than a second number of the detected image data lines are successively arranged, wherein upon receiving the conversion signal from the white pixel detecting unit, the data converting unit converts the white grayscale values which are included in the successively arranged image data lines to first high pixel data and first low pixel data, wherein the first high pixel data and the first low pixel data have a different value from each other.

Abstract: An exemplary embodiment of present disclosure provides a display device including a first horizontal line, a first delay line, a second delay line, a delay value determiner, and a timing controller. The first horizontal line receives a gate pulse signal (CPV) generated by a gate driver. The first delay line is connected to the first horizontal line to transmit a gate pulse signal received at a first horizontal position as a first delay signal. The second delay line is connected to the first horizontal line to transmit a gate pulse signal received at a second horizontal position as a second delay signal. The delay value determiner generates a horizontal delay signal based on the first delay signal and the second delay signal. The timing controller determines generation times of line latch signals applied to a plurality of data lines based on the horizontal delay signal.

Abstract: A capacitor and method of forming a capacitor are presented. The capacitor includes a substrate having a capacitor region in which the capacitor is disposed. The capacitor includes first, second and third sub-capacitors (C1, C2 and C3). The C1 comprises a metal oxide semiconductor (MOS) capacitor which includes a gate on the substrate. The gate includes a gate electrode over a gate dielectric. A first C1 plate is served by the gate electrode, a second C1 plate is served by the substrate of the capacitor region and a C1 capacitor dielectric is served by the gate dielectric. The C2 includes a back-end-of-line (BEOL) vertical capacitor disposed in ILD layers with metal levels and via levels. A plurality of metal lines are disposed in the metal levels.

Abstract: The present invention describes an electronic fuze operable to complement a mechanical point impact fuze. The electronic fuze includes a voltage generator circuit, micro-controller, a piezo-electric sensor, a firing circuit and a safety lockout circuit. When a projectile strikes a target at an optimum angle, the mechanical point impact fuze is activated; when the strike angle is oblique, the mechanical point impact fuze may be ineffective but the piezo-electric sensor is operable to trigger the firing circuit. The safety lockout circuit ensures the firing circuit is operative only after a predetermined delay time when an n-channel FET is turned OFF. The micro-controller also generates a TIME-OUT signal, which provides for self-destruction of a projectile that has failed to explode.

Abstract: A method of driving a display panel includes: selectively providing a resistance using resistor parts in response to address signals, where the resistor parts have resistances, respectively; and outputting common voltages to the display panel based on the selectively provided resistance.

Abstract: An integrated circuit with an MOS transistor abutting field oxide and a gate structure on the field oxide adjacent to the MOS transistor and a gap between an epitaxial source/drain and the field oxide is formed with a silicon dioxide-based gap filler in the gap. Metal silicide is formed on the exposed epitaxial source/drain region. A CESL is formed over the integrated circuit and a PMD layer is formed over the CESL. A contact is formed through the PMD layer and CESL to make an electrical connection to the metal silicide on the epitaxial source/drain region.

Abstract: A method and apparatus for detecting and recognizing a traffic sign using a modified census transform (MCT) feature are disclosed. The traffic sign recognizing method according to an exemplary embodiment of the present invention includes detecting a traffic sign candidate region from an input image using a modified census transform (MCT) feature; verifying whether the candidate region corresponds to a traffic sign using the MCT feature histogram for the candidate region; and lassifying a region of interest into the corresponding traffic sign step by step using the MCT feature histogram for the verified candidate region.

Abstract: A semiconductor memory device may include a memory cell array, a plurality of page buffers respectively connected to a plurality of bit lines of the memory cell array, and a control logic configured to control the plurality of page buffers to perform an operation on the memory cell array, wherein each of the plurality of page buffers senses a current amount, which varies according to a potential level of a corresponding bit line among the plurality of bit lines, at a sensing node to read data, and a precharge potential level at the sensing node is adjusted according to a temperature.

Abstract: A method of reducing current leakage in three-dimensional semiconductor devices due to short-channel effects includes providing a starting semiconductor structure, the structure including a semiconductor substrate having a n-type device region and a p-type device region, the p-type device region including an upper layer of p-type semiconductor material, a hard mask layer over both regions, and a mask over the structure for patterning at least one fin in each region. The method further includes creating partial fin(s) in each region from the starting semiconductor structure, creating a conformal liner over the structure, creating a punch-through-stop (PTS) in each region, causing each PTS to diffuse across a top portion of the substrate, and creating full fin(s) in each region from the partial fin(s).

Abstract: Apparatus and method for disturbance rejection in a control system. In some embodiments, a controller is adapted to position a control object. A disturbance observer generates a disturbance compensation value which is applied to reduce position error resulting from application of mechanical disturbance to the control object. The disturbance observer includes an adaptive filter with at least one dead zone providing a pass-through response with a scalar gain of less than one.

Abstract: At least one method, apparatus and system disclosed herein for suppressing over-growth of epitaxial layer formed on fins of fin field effect transistor (finFET) to prevent shorts between fins of separate finFET devices. A set of fins of a first transistor is formed. The set of fins comprises a first outer fin, an inner fin, and a second outer fin. An oxide deposition process is performed for depositing an oxide material upon the set of fins. A first recess process is performed for removing a portion of oxide material. This leaves a portion of the oxide material remaining on the inside walls of the first and second outer fins. A spacer nitride deposition process is performed. A spacer nitride removal process is performed, leaving spacer nitride material at the outer walls of the first and second outer fins. A second recess process is performed for removing the oxide material from the inside walls of the first and second outer fins. An epitaxial layer deposition processed upon the set of fins.

Abstract: A memory device and a method of making the same are presented. The memory device includes a substrate and a memory cell formed on the substrate. The memory cell includes a single transistor. The single transistor includes a first gate on the substrate which functions as a control gate and a second gate embedded in the substrate which functions as a select gate.

Abstract: A semiconductor device having a substrate; a plurality of pillar structures, wherein each pillar structure includes an active pillar disposed over the substrate; a gate electrode surrounding an outer wall of the active pillar; an interlayer dielectric (ILD) layer insulating adjacent pillar structures; a gate contact penetrating the ILD layer and configured to connect to a sidewall of the gate electrode; and a word line connected to the gate contact.

Abstract: Provided is a link adaptation transmission and reception method in device-to-device (D2D) communication based on cellular mobile communication. An operation method of a terminal in the link adaptation method according to the present invention includes receiving information related to a first transmission through a D2D link, performing transmission for an opposite terminal using the information related to the first transmission, and determining information related to a second transmission after the transmission based on reception from the opposite terminal. Using the link adaptation method according to the present invention, an adaptive modulation and coding scheme may be provided at the time of data transmission on a D2D link while minimizing control of a base station, thereby reducing the complexity of a cellular network due to the D2D communication.