Abstract: A method of receiving content in a client is provided. The method may include receiving, from a server, a spatial set identifier (ID) corresponding to a tile group including at least one tile, sending, to the server, a request for first content corresponding to metadata, and receiving, from the server, the first content corresponding to the request.

Abstract: A display apparatus includes a display panel including a plurality of data lines arranged in a first direction, where the data line extends substantially in a second direction, and a plurality of pixels electrically connected to the data lines, and a data driver configured to output a first data voltage and a second data voltage to the data lines and configured to control the number of the data lines which receives the first data voltage and the number of the data lines which receive the second data voltage, where the first data voltage has a positive polarity during a first frame and a negative polarity during a second frame, and the second data voltage has the negative polarity during the first frame and the positive polarity during the second frame.

Abstract: A semiconductor memory structure (e.g., SRAM) includes vertical channels with a circular, square or rectangular cross-sectional shape. Each unit cell can include a single pull-up vertical transistor and either: one pull-down vertical transistor and one pass-gate vertical transistor; or two or more of each of the pull-down and pass-gate vertical transistors. The structure may be realized by providing adjacent layers of undoped semiconductor material, forming vertical channels for vertical transistors, the vertical channels situated on each of the adjacent layers, doping a first half of each of the adjacent layers with a n-type or p-type dopant, doping a second half of each of the adjacent layers with an opposite type dopant to that of the first half, forming wrap-around gates surrounding the vertical channels, and forming top electrodes for the vertical transistors.

Abstract: At least one method, apparatus and system disclosed herein for suppressing over-growth of epitaxial layer formed on fins of fin field effect transistor (finFET) to prevent shorts between fins of separate finFET devices. A set of fins of a first transistor is formed. The set of fins comprises a first outer fin, an inner fin, and a second outer fin. An oxide deposition process is performed for depositing an oxide material upon the set of fins. A first recess process is performed for removing a portion of oxide material. This leaves a portion of the oxide material remaining on the inside walls of the first and second outer fins. A spacer nitride deposition process is performed. A spacer nitride removal process is performed, leaving spacer nitride material at the outer walls of the first and second outer fins. A second recess process is performed for removing the oxide material from the inside walls of the first and second outer fins. An epitaxial layer deposition processed upon the set of fins.

Abstract: The disclosure is related to MV transistors with reduced gate induced drain leakage (GIDL) and impact ionization. The reduced GILD and impact ionization are achieved without increasing device pitch of the MV transistor. A low voltage (LV) device region and a medium voltage (MV) device region are disposed on the substrate. Non-extended spacers are disposed on the sidewalls of the LV gate in the LV device region; extended L shaped spacers are disposed on the sidewalls of the MV gate in the MV device region. The non-extended spacers and extended L shape spacers are patterned simultaneously. Extended L shaped spacers displace the MV heavily doped (HD) regions a greater distance from at least one sidewall of the MV gate to reduce the GIDL and impact ionization of the MV transistor.

Abstract: Provided is a subframe structure of a wireless communication system, including a plurality of short frames defined as n (n<12, n is a natural number) OFDM symbol periods, wherein a transmission time interval (TTI) is determined based on the plurality of short frames.

Abstract: A method of driving a display panel includes steps of generating a plurality of load signals, of which at least one load signal has a different timing from the rest of the load signals, generating data voltages synchronized to low periods of the load signals and outputting the data voltages to data lines. Accordingly, the data voltages synchronized to each of the load signals can be outputted to each of the data lines. A color coordinate problem occurring when applying a RGBW type may be solved by setting a charging time of a white sub-pixel different from the rest of the sub-pixels. Thus, display quality of a display apparatus including the display panel may be improved.

Abstract: A method of driving a display panel includes: selectively providing a resistance using resistor parts in response to address signals, where the resistor parts have resistances, respectively; and outputting common voltages to the display panel based on the selectively provided resistance.

Abstract: A display device is discussed. The display device includes a substrate having a display area and a pad area in a periphery of the display area, the display area including a plurality of pixel regions; a thin film transistor having a channel layer, and on the substrate; a gate link line and a first common voltage line arranged to cross each other, and having a first insulation film interposed therebetween; a second common voltage line and a data link line arranged to cross each other, and having second insulation film interposed therebetween; a first pattern disposed on the first insulation film; and a second pattern disposed. on the second insulation film, wherein the channel layer, the first pattern and the second pattern are formed of the same material.

Abstract: One illustrative integrated circuit product disclosed herein includes, among other things, a plurality of FinFET devices, each of which comprises a gate structure comprising a high-k gate insulation material and at least one layer of metal, a single diffusion break (SDB) isolation structure positioned in a first trench defined in a semiconductor substrate between first and second active regions, the SDB isolation structure comprising the high-k insulating material and the at least one layer of metal, and a double diffusion break (DDB) isolation structure positioned in a second trench defined in a semiconductor substrate between third and fourth active regions, the DDB isolation structure comprising a first insulating material that substantially fills the second trench.

Abstract: A method for fabricating an integrated circuit that include providing or obtaining an extremely thin silicon-on-insulator (ETSOI) substrate, dividing the ETSOI substrate into a low voltage field effect transistor (FET) region and one or both of a medium voltage FET region and a high voltage FET regions, and forming a low voltage FET within the low voltage FET regions and forming a medium and/or high voltage FET within the medium and/or high voltage FET region(s). Channel, source, and drain structures of the low voltage FET are formed in an upper silicon layer that is disposed above a buried oxide layer of the ETSOI substrate, whereas channel, source, and drain structures of the medium and/or high voltage FETs are formed at least partially below the upper silicon layer.

Abstract: Described are platforms, systems, media, and methods for providing a biologic information visual synthesis application, the biologic information including one or more of: genome data, microbiome data, and metabolome data.

Abstract: One illustrative method disclosed herein includes, among other things, forming an initial vertically oriented channel semiconductor structure having a first height above a substrate, forming a sacrificial spacer structure adjacent the initial vertically oriented channel semiconductor structure and, with the sacrificial spacer in position, performing at least one process operation to define a self-aligned bottom source/drain region for the device that is self-aligned with respect to the sacrificial spacer structure, forming an isolation region in the trench and forming a bottom source/drain electrode above the isolation region. The method also includes removing the sacrificial spacer structure and forming a bottom spacer material around the vertically oriented channel semiconductor structure above the bottom source/drain electrode.

Abstract: At least one method, apparatus and system disclosed herein for suppressing over-growth of epitaxial layer formed on fins of fin field effect transistor (finFET) to prevent shorts between fins of separate finFET devices. A set of fins of a first transistor is formed. The set of fins comprises a first outer fin, an inner fin, and a second outer fin. An oxide deposition process is performed for depositing an oxide material upon the set of fins. A first recess process is performed for removing a portion of oxide material. This leaves a portion of the oxide material remaining on the inside walls of the first and second outer fins. A spacer nitride deposition process is performed. A spacer nitride removal process is performed, leaving spacer nitride material at the outer walls of the first and second outer fins. A second recess process is performed for removing the oxide material from the inside walls of the first and second outer fins. An epitaxial layer deposition processed upon the set of fins.

Abstract: The present specification is related to a method for performing multi-projection and a multi-projection system for minimizing a black offset in a multi-projection environment. The present specification provides the method for performing multi-projection comprising estimating the intensity transfer function (ITF) of a plurality of projectors, calculating an optimal black offset threshold for each of the projectors by using each of the ITFs, and applying the optimal black offset threshold to an image projection by each of the projectors.

Abstract: A method of receiving content in a client is provided. The method may include receiving, from a server, a spatial set identifier (ID) corresponding to a tile group including at least one tile, sending, to the server, a request for first content corresponding to metadata, and receiving, from the server, the first content corresponding to the request.

Abstract: A circuit includes a reference signal generating part configured to generate a plurality of reference signals having levels different from each other, a comparing part configured to compare a ripple signal with the reference signals to determine a level of the ripple signal, a compensating signal generating part configured to generate a compensation ripple signal corresponding to the level of the ripple signal, where the compensation ripple signal has a phase opposite to the ripple signal, and a push-pull circuit configured to stabilize the compensation ripple signal.

Abstract: A method and apparatus for transmitting a training sequence code of a transmitting apparatus with a plurality of transmitting antennas in a communication system are provided. A transmitting apparatus allocates a plurality of time slots for the plurality of transmitting antennas to be divided into at least one frame, and sends a training sequence code with reference power for any one of the transmitting antennas, and sends remaining training sequence codes for remainders of the transmitting antennas with transmission power from zero to the reference power, in any one of the time slots. A receiving apparatus receives a plurality of training sequence codes for a plurality of transmitting antennas through any one of the plurality of receiving antennas from a transmitting apparatus, and selects one of the training sequence codes having the greatest reception power to estimate a channel. This may improve a channel estimation performance in a communication system.

Abstract: A method of driving a display panel includes: selectively providing a resistance using resistor parts in response to address signals, where the resistor parts have resistances, respectively; and outputting common voltages to the display panel based on the selectively provided resistance.

Abstract: An integrated circuit with an MOS transistor abutting field oxide and a gate structure on the field oxide adjacent to the MOS transistor and a gap between an epitaxial source/drain and the field oxide is formed with a silicon dioxide-based gap filler in the gap. Metal silicide is formed on the exposed epitaxial source/drain region. A CESL is formed over the integrated circuit and a PMD layer is formed over the CESL. A contact is formed through the PMD layer and CESL to make an electrical connection to the metal silicide on the epitaxial source/drain region.