Abstract: A method of forming raised S/D regions by partial EPI growth with a partial EPI liner therebetween and the resulting device are provided. Embodiments include forming groups of fins extending above a STI layer; forming a gate over the groups of fins; forming a gate spacer on each side of the gate; forming a raised S/D region proximate to each spacer on each fin of the groups of fins, each raised S/D region having a top surface, vertical sidewalls, and an undersurface; forming a liner over and between each raised S/D region; removing the liner from the top surface of each raised S/D region and from in between a group of fins; forming an overgrowth region on the top surface of each raised S/D region; forming an ILD over and between the raised S/D regions; and forming a contact through the ILD, down to the raised S/D regions.

Abstract: A microwave filter for use with a microwave brazing system having a brazing chamber, a vacuum line, and a pressure gauge located proximate the vacuum line. The microwave filter includes a baffle plate configured to be mounted in an opening between the brazing chamber and the pressure gauge, and a plurality of hollow pipes configured to substantially prevent the transmission of microwaves from the brazing chamber to the pressure gauge, and further configured to allow gas to flow between the brazing chamber and the vacuum line.

Abstract: One illustrative method disclosed herein includes, among other things, forming a shared gate cavity that spans across an isolation region and is positioned above first and second active regions, forming at least one layer of material in the shared gate cavity above the first and second active regions and above the isolation region, forming a first masking layer that covers portions of the shared gate cavity positioned above the first and second active regions while exposing a portion of the shared gate cavity positioned above the isolation region, with the first masking layer in position, performing at least one first etching process to remove at least a portion of the at least one layer of material in the exposed portion of the shared gate cavity above the isolation region, and removing the first masking layer.

Abstract: An integrated circuit includes a PMOS gate structure and a gate structure on adjacent field oxide. An epitaxy hard mask is formed over the gate structure on the field oxide so that the epitaxy hard mask overlaps the semiconductor material in PMOS source/drain region. SiGe semiconductor material is epitaxially formed in the source/drain regions, so that that a top edge of the SiGe semiconductor material at the field oxide does not extend more than one third of a depth of the SiGe in the source/drain region abutting the field oxide. Dielectric spacers on lateral surfaces of the gate structure on the field oxide extend onto the SiGe; at least one third of the SiGe is exposed. Metal silicide covers at least one third of a top surface of the SiGe. A contact has at least half of a bottom of the contact directly contacts the metal silicide on the SiGe.

Abstract: A metal-oxide-semiconductor transistor (MOS) and method of fabricating the same, in which the effective channel length is increased relative to the width of the gate electrode. A dummy gate electrode overlying dummy gate dielectric material is formed at the surface of the structure, with self-aligned source/drain regions, and dielectric spacers on the sidewalls of the dummy gate structure. The dummy gate dielectric underlies the sidewall spacers. Following removal of the dummy gate electrode and the underlying dummy gate dielectric material, including from under the spacers, a silicon etch is performed to form a recess in the underlying substrate. This etch is self-limiting on the undercut sides, due to the crystal orientation, relative to the etch of the bottom of the recess. The gate dielectric and gate electrode material are then deposited into the remaining void, for example to form a high-k metal gate MOS transistor.

Abstract: An embedded resistor structure in an integrated circuit that can be formed in a replacement gate high-k metal gate metal-oxide-semiconductor (MOS) technology process flow. The structure is formed by etching a trench into the substrate, either by removing a shallow trench isolation structure or by silicon etch at the desired location. Deposition of the dummy gate polysilicon layer fills the trench with polysilicon; the resistor polysilicon portion is protected from dummy gate polysilicon removal by a hard mask layer. The resistor polysilicon can be doped during source/drain implant, and can have its contact locations silicide-clad without degrading the metal gate electrode.

Abstract: Methods of fabricating fin structures having exposed upper fin portions with a uniform exposure height are disclosed herein. The fabrication methods include providing a substrate with plurality of fins and a dielectric material disposed between and over the plurality of fins, planarizing the dielectric material and the plurality of fins, and uniformly recessing the dielectric material to a pre-selected depth below upper surfaces of the plurality of fins to expose upper fin portions. The exposed upper fin portions, as a result of uniformly recessing the dielectric material, have a uniform exposure height above the recessed dielectric material. A protective film may be provided over the recessed dielectric material and exposed upper fin portions to preserve the uniform exposure height of the upper fin portions. The uniform exposure height of the exposed upper fin portions facilitates subsequent formation of one or more circuit structures above the substrate.

Abstract: A method of forming raised S/D regions by partial EPI growth with a partial EPI liner therebetween and the resulting device are provided. Embodiments include forming groups of fins extending above a STI layer; forming a gate over the groups of fins; forming a gate spacer on each side of the gate; forming a raised S/D region proximate to each spacer on each fin of the groups of fins, each raised S/D region having a top surface, vertical sidewalls, and an undersurface; forming a liner over and between each raised S/D region; removing the liner from the top surface of each raised S/D region and from in between a group of fins; forming an overgrowth region on the top surface of each raised S/D region; forming an ILD over and between the raised S/D regions; and forming a contact through the ILD, down to the raised S/D regions.

Abstract: A method of driving a display panel includes steps of generating a plurality of load signals, of which at least one load signal has a different timing from the rest of the load signals, generating data voltages synchronized to low periods of the load signals and outputting the data voltages to data lines. Accordingly, the data voltages synchronized to each of the load signals can be outputted to each of the data lines. A color coordinate problem occurring when applying a RGBW type may be solved by setting a charging time of a white sub-pixel different from the rest of the sub-pixels. Thus, display quality of a display apparatus including the display panel may be improved.

Abstract: A method of offloading data is provided by a UE. The UE receives data from a macro cell base station over an MC-RB while an E-RAB between the macro cell base station and a gateway is established. The UE receives a first connection reconfiguration message from the macro cell base station after the E-RAB between a small cell base station and the gateway is established, and establishes an SC-RB according to the first connection reconfiguration message. Next, the UE receives a second connection reconfiguration message from the macro cell base station after a path between the macro cell base station and the gateway is switched to a path between the small cell base station and the gateway, and data for the MC-RB are exhausted on the macro cell base station. Then, the UE releases the MC-RB and switches to the SC-RB.

Abstract: Described herein is a technology for facilitating remote monitoring, in accordance with one aspect, image data and corresponding true color data of a region of interest is received by a computer system from a mobile device. The computer system may integrate the image data and the true color data to generate normalized true color data. The normalized true color data may then be mapped to device independent color image data A recommendation may then be sent based on the device-independent color image data.

Abstract: The present invention describes an electronic fuze operable to complement a mechanical point impact fuze. The electronic fuze includes a voltage generator circuit, micro-controller, a piezo-electric sensor, a firing circuit and a safety lockout circuit. When a projectile strikes a target at an optimum angle, the mechanical point impact fuze is activated; when the strike angle is oblique, the mechanical point impact fuze may be ineffective but the piezo-electric sensor is operable to trigger the firing circuit. The safety lockout circuit ensures the firing circuit is operative only after a predetermined delay time when an n-channel FET is turned OFF. The micro-controller also generates a TIME-OUT signal, which provides for self-destruction of a projectile that has failed to explode.

Abstract: An integrated circuit includes a PMOS gate structure and a gate structure on adjacent field oxide. An epitaxy hard mask is formed over the gate structure on the field oxide so that the epitaxy hard mask overlaps the semiconductor material in PMOS source/drain region. SiGe semiconductor material is epitaxially formed in the source/drain regions, so that that a top edge of the SiGe semiconductor material at the field oxide does not extend more than one third of a depth of the SiGe in the source/drain region abutting the field oxide. Dielectric spacers on lateral surfaces of the gate structure on the field oxide extend onto the SiGe; at least one third of the SiGe is exposed. Metal silicide covers at least one third of a top surface of the SiGe. A contact has at least half of a bottom of the contact directly contacts the metal silicide on the SiGe.

Abstract: A method of forming raised S/D regions by partial EPI growth with a partial EPI liner therebetween and the resulting device are provided. Embodiments include forming groups of fins extending above a STI layer; forming a gate over the groups of fins; forming a gate spacer on each side of the gate; forming a raised S/D region proximate to each spacer on each fin of the groups of fins, each raised S/D region having a top surface, vertical sidewalls, and an undersurface; forming a liner over and between each raised S/D region; removing the liner from the top surface of each raised S/D region and from in between a group of fins; forming an overgrowth region on the top surface of each raised S/D region; forming an ILD over and between the raised S/D regions; and forming a contact through the ILD, down to the raised S/D regions.

Abstract: A method includes forming at least one fin in a semiconductor substrate. A sacrificial gate structure is formed around a first portion of the at least one fin. Sidewall spacers are formed adjacent the sacrificial gate structure. The sacrificial gate structure and spacers expose a second portion of the at least one fin. An epitaxial material is formed on the exposed second portion. At least one process operation is performed to remove the sacrificial gate structure and thereby define a gate cavity between the spacers that exposes the first portion of the at least one fin. The first portion of the at least one fin is recessed to a first height less than a second height of the second portion of the at least one fin. A replacement gate structure is formed within the gate cavity above the recessed first portion of the at least one fin.

Abstract: A device is disclosed. The device includes a top electrode, a bottom electrode and a storage element between the top and bottom electrodes. The storage element includes a heat generating element disposed on the bottom electrode, a phase change element wrapping around an upper portion of the heat generating element, and a dielectric liner sandwiched between the phase change element and the heat generating element.

Abstract: Provided is a geometric correction apparatus and method based on a recursive Bezier patch sub-division. A geometric correction method may include: receiving, from a camera, a first image that is obtained by photographing a black screen that is projected by a projector onto a projection surface; receiving, from the camera, a second image that is obtained by photographing a predetermined pattern that is projected by the projector onto the projection screen; generating a third image by subtracting the first image from the second image; and performing geometric correction with respect to the predetermined pattern to correct a distortion between the predetermined pattern and the third image.

Abstract: An apparatus and method for generating and consuming a three-dimensional (3D) data format to generate a realistic panoramic image are provided. The apparatus may include an image preprocessing unit to search for a matching point between images captured by a plurality of cameras, and to extract, as image information, at least one of a depth value, a texture value and object division information from each of the captured images, an image information structuring unit to structure 3D data to use the extracted image information to generate a realistic image, a 3D data format storage unit to store format information of the structured 3D data in a database (DB), realistic image generating unit to generate a realistic panoramic image using the stored format information of the 3D data, and a realistic image rendering unit to perform rendering on the generated realistic panoramic image.

Abstract: Various methods of forming a vertical static random access memory cell and the resulting devices are disclosed. One method includes forming a plurality of pillars of semiconductor material on a substrate, forming first source/drain regions on a lower portion of each of the pillars, forming a gate electrode around each of the pillars above the first source/drain region, forming a second source/drain region on a top portion of each of the pillars above the gate electrode, wherein the first and second source/drain regions and the gate electrode on each pillar defines a vertical transistor, and interconnecting the vertical transistors to define a static random access memory cell.

Abstract: A raised source/drain MOS transistor is formed in a process that utilizes a first sidewall spacer when implanting a semiconductor region to form the heavily-doped source region and the heavily-doped drain region of the transistor, and a second different sidewall spacer when epitaxially growing the raised source region and the raised drain region of the transistor.