Abstract: An image sensor may include a photodiode configured to convert an optical signal into photogenerated charge, a sensing node adjacent to the photodiode and configured to sense the photogenerated charge, a read-out circuit configured to convert the photogenerated charge into an electrical signal and to output the electrical signal through an output line, and/or at least one capacitor formed between the sensing node and a conversion gain control line. The conversion gain control line corresponding to the at least one capacitor may be selectively connected to a ground line or the output line based on at least one control signal.

Abstract: Provided are a method of manufacturing an aluminum-zinc-based alloy sheet using twin-roll casting and an aluminum-zinc-based alloy sheet manufactured thereby. Specifically, a method of manufacturing an aluminum-zinc-based alloy sheet, including preparing a melt by melting elements corresponding to an aluminum alloy including 0.5 wt % to 10 wt % of zinc, inevitable impurities and aluminum as a balance (step 1); and twin-roll casting by introducing the melt prepared in step 1 between a pair of rotating cooling rolls (step 2), and an aluminum-zinc-based alloy sheet manufactured thereby are provided. The present invention may manufacture an aluminum-zinc-based alloy sheet, in which twin-roll casting is known to be difficult due to a wide solid-liquid coexistence region, by twin-roll casting by using cooling rolls having high thermal conductivity and controlling a reduction force by the rotational speed of the rolls.

Abstract: An integrated circuit includes a PMOS gate structure and a gate structure on adjacent field oxide. An epitaxy hard mask is formed over the gate structure on the field oxide so that the epitaxy hard mask overlaps the semiconductor material in PMOS source/drain region. SiGe semiconductor material is epitaxially formed in the source/drain regions, so that that a top edge of the SiGe semiconductor material at the field oxide does not extend more than one third of a depth of the SiGe in the source/drain region abutting the field oxide. Dielectric spacers on lateral surfaces of the gate structure on the field oxide extend onto the SiGe; at least one third of the SiGe is exposed. Metal silicide covers at least one third of a top surface of the SiGe. A contact has at least half of a bottom of the contact directly contacts the metal silicide on the SiGe.

Abstract: A circuit includes a reference signal generating part configured to generate a plurality of reference signals having levels different from each other, a comparing part configured to compare a ripple signal with the reference signals to determine a level of the ripple signal, a compensating signal generating part configured to generate a compensation ripple signal corresponding to the level of the ripple signal, where the compensation ripple signal has a phase opposite to the ripple signal, and a push-pull circuit configured to stabilize the compensation ripple signal.

Abstract: A device is disclosed. The device includes a top electrode, a bottom electrode and a storage element between the top and bottom electrodes. The storage element includes a heat generating element disposed on the bottom electrode, a phase change element wrapping around an upper portion of the heat generating element, and a dielectric liner sandwiched between the phase change element and the heat generating element.

Abstract: A method for item scanning in a shopping cart includes detecting a change in a weight of one or more items within a shopping cart. The weight is sensed by a weight sensor disposed in the shopping cart. Each of the one or more items includes a radio-frequency identification (RFID) tag. The method includes switching an RFID reader to an active state and scanning RFID tags of the one or more items with the RFID reader in response to detecting the change in weight. The RFID reader is disposed on the shopping cart. The method includes switching the RFID reader to an inactive state subsequent to scanning the RFID tags with the RFID reader. The method includes determining an inventory of the one or more items based on information from the scanned RFID tags. The inventory includes an item quantity and an item identity.

Abstract: A metal-oxide-semiconductor transistor (MOS) and method of fabricating the same, in which the effective channel length is increased relative to the width of the gate electrode. A dummy gate electrode overlying dummy gate dielectric material is formed at the surface of the structure, with self-aligned source/drain regions, and dielectric spacers on the sidewalls of the dummy gate structure. The dummy gate dielectric underlies the sidewall spacers. Following removal of the dummy gate electrode and the underlying dummy gate dielectric material, including from under the spacers, a silicon etch is performed to form a recess in the underlying substrate. This etch is self-limiting on the undercut sides, due to the crystal orientation, relative to the etch of the bottom of the recess. The gate dielectric and gate electrode material are then deposited into the remaining void, for example to form a high-k metal gate MOS transistor.

Abstract: In a high strength and high electrical conductive nano crystalline grain multi-layer copper alloy sheet, a plurality of high strength and high electrical conductive nano crystalline grain multi-layer sheets manufactured by roll-bonding an oxygen free copper (OFC) alloy sheet and a deoxidized low-phosphorous copper (DLP) alloy sheet are plastically bonded by roll-bonding method so that an OFC alloy layer and a DLP alloy layer are alternated to each other to have electrical conductivity of 85 IACS (%) or more and tensile strength of 500 MPa or more.

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. An exemplary method for fabricating an integrated circuit having a split-gate nonvolatile memory device includes forming a charge storage structure overlying a semiconductor substrate and having a first sidewall and a second sidewall and forming an interior cavity. The method forms a control gate in the interior cavity. Further, the method forms a first select gate overlying the semiconductor substrate and adjacent the first sidewall. A first memory cell is formed by the control gate and the first select gate. The method also forms a second select gate overlying the semiconductor substrate and adjacent the second sidewall. A second memory cell is formed by the control gate and the second select gate.

Abstract: An analog-to-digital converter (ADC) within an image sensor includes a comparator comparing a ramp signal with an image signal, and a counter generating a count result in response to the comparison by counting a clock during a counting interval. The ADC determines whether a first counting interval for the counter is less than a reference interval, and if the first counting interval is less than the reference interval the counting interval is a first counting interval, else the counting interval is a second counting interval.

Abstract: The present invention proposes a method and apparatus for correcting a motion of panorama video captured by a plurality of cameras. The method of the present invention includes performing global motion estimation for estimating smooth motion trajectories from the panorama video, performing global motion correction for correcting a motion in each frame of the estimated smooth motion trajectories, performing local motion correction for correcting a motion of each of the plurality of cameras for the results in which the motions have been corrected, and performing warping on the results on which the local motion correction has been performed.

Abstract: A capacitor and method of forming a capacitor are presented. The capacitor includes a substrate having a capacitor region in which the capacitor is disposed. The capacitor includes first, second and third sub-capacitors (C1, C2 and C3). The C1 comprises a metal oxide semiconductor (MOS) capacitor which includes a gate on the substrate. The gate includes a gate electrode over a gate dielectric. A first C1 plate is served by the gate electrode, a second C1 plate is served by the substrate of the capacitor region and a C1 capacitor dielectric is served by the gate dielectric. The C2 includes a back-end-of-line (BEOL) vertical capacitor disposed in ILD layers with metal levels and via levels. A plurality of metal lines are disposed in the metal levels. The metal lines of a metal level are grouped in alternating first and second groups, the first group serves as first C2 plates and second group serves as second.

Abstract: A method of receiving content in a client is provided. The method may include receiving, from a server, a spatial set identifier (ID) corresponding to a tile group including at least one tile, sending, to the server, a request for first content corresponding to metadata, and receiving, from the server, the first content corresponding to the request.

Abstract: A method of driving a display panel includes: selectively providing a resistance using resistor parts in response to address signals, where the resistor parts have resistances, respectively; and outputting common voltages to the display panel based on the selectively provided resistance.

Abstract: An embedded resistor structure in an integrated circuit that can be formed in a replacement gate high-k metal gate metal-oxide-semiconductor (MOS) technology process flow. The structure is formed by etching a trench into the substrate, either by removing a shallow trench isolation structure or by silicon etch at the desired location. Deposition of the dummy gate polysilicon layer fills the trench with polysilicon; the resistor polysilicon portion is protected from dummy gate polysilicon removal by a hard mask layer. The resistor polysilicon can be doped during source/drain implant, and can have its contact locations silicide-clad without degrading the metal gate electrode.

Abstract: The present specification is related to a method for performing multi-projection and a multi-projection system for minimizing a black offset in a multi-projection environment. The present specification provides the method for performing multi-projection comprising estimating the intensity transfer function (ITF) of a plurality of projectors, calculating an optimal black offset threshold for each of the projectors by using each of the ITFs, and applying the optimal black offset threshold to an image projection by each of the projectors.

Abstract: A protein used as a biomarker for diagnosing IgA nephropathy and TGBM (thin-glomerular-basement-membrane) using urine through a target proteomics method. A diagnosis biomarker protein and a kit for diagnosing IgA nephropathy and TGBM and predicting progress of the nephropathy in advance using the protein are provided. The degree of the progression of the disease can be grasped by detecting IgA nephropathy and TGBM, enabling early diagnosis and confirming progress from the patient's urine. In addition, a monoclonal antibody produced based on the diagnosis biomarker protein can be used for an immunoassay kit (ELISA, antibody coated tube test, lateral-flow test, potable biosensor). The monoclonal antibody is used in early diagnosis and progression detection of IgA nephropathy and development of a novel drug for the purpose of treatment.

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. An exemplary method for fabricating an integrated circuit having a split-gate nonvolatile memory device includes forming a charge storage structure overlying a semiconductor substrate and having a first sidewall and a second sidewall and forming an interior cavity. The method forms a control gate in the interior cavity. Further, the method forms a first select gate overlying the semiconductor substrate and adjacent the first sidewall. A first memory cell is formed by the control gate and the first select gate. The method also forms a second select gate overlying the semiconductor substrate and adjacent the second sidewall. A second memory cell is formed by the control gate and the second select gate.

Abstract: Provided is a technology for preventing noisy data from being displayed before valid data is inputted when power is turned on in a liquid crystal display.

Abstract: The present invention relates to a multi-storage case for toothpicks, skewers, and cotton swabs, wherein it is possible to store toothpicks, skewers, and cotton swabs together and to easily withdraw and use the same. In the other words, the present invention comprises: a cylindrical storage body for allowing toothpicks, skewers, and cotton swabs to be stored upright; and a rotatable cover boy inserted and coupled to the outside of the storage body, wherein a withdrawing opening means is provided at the storage body and the covert body to allow toothpicks, skewers, and cotton swabs to be selectively drawn. Therefore, the present invention has improved functionality and convenience since toothpicks, skewers, and cotton swabs are separately stored while standing upright, and it is possible to selectively withdraw toothpicks, skewers, and cotton swabs by the rotations of the cover body.