Abstract: A method for fabricating a transistor including a bulb-type recess channel includes forming a bulb-type recess pattern in a substrate, forming a gate insulating layer over the substrate and the bulb-type recess pattern, forming a first gate conductive layer over the gate insulating layer, forming a void movement blocking layer over the first gate conductive layer in the bulb-type recess pattern, and forming a second gate conductive layer over the void movement blocking layer and the first gate conductive layer.

Abstract: Provided is a technology for preventing noisy data from being displayed before valid data is inputted when power is turned on in a liquid crystal display.

Abstract: A gate structure of a semiconductor device includes an intermediate structure, wherein the intermediate structure includes a titanium layer and a tungsten silicide layer. A method for forming a gate structure of a semiconductor device includes forming a polysilicon-based electrode. An intermediate structure, which includes a titanium layer and a tungsten silicide layer, is formed over the polysilicon-based electrode. A metal electrode is formed over the intermediate structure.

Abstract: The present invention describes an electronic fuze (200) operable to complement a mechanical point impact fuze (101). The electronic fuze (200) includes a voltage generator circuit (210), micro-controller (220), a piezo-electric sensor (262), a firing circuit (280) and a safety lockout circuit (290). When a projectile (50) strikes a target at an optimum angle, the mechanical point impact fuze (101) is activated; when the strike angle is oblique, the mechanical point impact fuze may be ineffective but the piezo-electric sensor (262) is operable to trigger the firing circuit (280). The safety lockout circuit (290) ensures the firing circuit (280) is operative only after a predetermined delay time when an n-channel FET (292) is turned OFF. The micro-controller (220) also generates a TIME-OUT signal, which provides for self-destruction of a projectile that has failed to explode.

Abstract: Provided are an inter-carrier member handover apparatus and method. In the inter-carrier member handover apparatus and method, data is transmitted or received by allocating a plurality of carriers to a single mobile terminal, a carrier aggregation, which includes a plurality of carrier members that process the allocated carriers, is managed, and a handover between the carrier members in the managed carrier aggregation is processed when the handover is required. Therefore, an intra-base station handover can be performed when a mobile terminal and a base station exchange data using a plurality of carrier frequency bands.

Abstract: A caller authentication system that may enable a called party to be provided with identification information of a caller may be provided. The caller authentication system, including: a communication system to transmit, when a call request signal is received from a calling terminal of a caller, network information and a telephone number of the calling terminal to a certificate authority server, and to request identification of the caller, the network information and the telephone number being included in the call request signal, to transmit, when identification information of the caller is received from the certificate authority server in response to the identification request, the identification information to a called terminal of a called party, and to enable the identification information to be displayed on the called terminal.

Abstract: A method for fabricating a semiconductor device includes providing a substrate having a bulb-type recessed region, forming a gate insulating layer over the bulb-type recessed region and the substrate, and forming a gate conductive layer over the gate insulating layer. The gate conductive layer fills the bulb-type recessed region. The gate conductive layer includes two or more conductive layers and a discontinuous interface between the conductive layers.

Abstract: A method of k*k subsampling, where k is an integer greater than one, a full frame readout on a plurality of pixels arranged in rows and columns, each pixel belonging to one of at least two sets, a first set configured to sense a first value of an image parameter and a second set configured to sense a second value of the image parameter, the method including sampling signals of k pixels of at least one set in a first row to output subsampled signals, converting the subsampled signals into digital signals having a lower resolution than the full frame readout, repeating sampling and converting for k rows, and adding digital signals for the first to kth rows within the at least one set.

Abstract: A ramp generator includes a row decoder, a column decoder, a current cell matrix and a current-voltage converter. The row decoder generates row selection signals, and the column decoder generates column selection signals. Each of current cells included in the current cell matrix is turned on to provide a unit current if a corresponding row selection signal and a corresponding column selection signal are activated. Each of the current cells is maintained to be turned on even if the corresponding row selection signal or the corresponding column selection signal is deactivated. The current cell matrix outputs an output current by summing unit currents provided from the current cells that are turned on. The current-voltage converter converts the output current of the current cell matrix into a ramp voltage. Therefore, the ramp generator may have a small size and prevent a glitch.

Abstract: A microwave filter for use with a microwave brazing system having a brazing chamber, a vacuum line, and a pressure gauge located proximate the vacuum line. The microwave filter comprises a baffle plate configured to be mounted in an opening between the brazing chamber and the pressure gauge, and a plurality of hollow pipes configured to substantially prevent the transmission of microwaves from the brazing chamber to the pressure gauge, and further configured to allow gas to flow between the brazing chamber and the vacuum line.

Abstract: Proximity detection apparatus 100 and method is disclosed herein. In a first embodiment, the proximity detection apparatus 100 is for tracking location of subjects tagged with respective transponders. The apparatus 100 comprises a radio frequency (RF) antenna 102 configured to transmit a RF signal for sensing presence of a subject, a sensing circuit 106 configured to detect detuning of the RF antenna 102 and to derive a parameter associated with the RF signal which is representative of the detuning; and a control system 110,112 configured to compare the parameter with a threshold and based on the comparison, determine whether to initiate an inventor check to locate the subjects.

Abstract: In a high speed vertical channel transistor, a pillar structure is formed over a substrate, a gate electrode surrounds an outer wall of a lower portion of the pillar structure; and a word line extends in a direction to partially contact an outer wall of the gate electrode. The word line shifts toward a side of the pillar structure resulting in increased transistor speed.

Abstract: A semiconductor device includes a substrate, a pattern including a conductive layer and a hard mask layer stacked over the substrate, a capping layer surrounding sidewalls of the pattern, and a stress buffer layer disposed between the hard mask layer and the capping layer. The stress buffer layer is configured to inhibit transfer of stress between the hard mask layer and the capping layer during a thermal process so as to inhibit leaning of the capping layer.

Abstract: Provided are an apparatus and method for controlling random access of a machine type communication (MTC) device in a wireless communication network providing an MTC service, and a wireless communication system providing an MTC service. The method includes inserting, at a base station, information about a random access preamble group for an MTC device and information about a random access time for an MTC device in system information (SI), and transmitting, at the base station, the SI to at least one MTC device.

Abstract: Provided are an overload control apparatus and method for a machine type communication (MTC) service. The overload control method includes, when an overload state has occurred, including an overload indicator (OI) in a MAC subheader in a random access response to be transmitted to a terminal and transmitting the random access response, before an MTC device wanting to perform a random access procedure transmits a random access preamble to the base station, searching for a random access response transmitted from the base station, when the transmitted random access response is searched for, peeking at the random access response and receiving it, and when it is determined that an OI is included in the random access response, waiting, at the MTC device, for a predetermined delay time and transmitting the random access preamble for performing the random access procedure to the base station.

Abstract: Provided is a contention based uplink transmission method. A base station may assign a contention based radio network temporary identifier (CB-RNTI) to a plurality of terminals, and terminals assigned with the same CB-RNTI may perform contention uplink transmission using the same radio resource.

Abstract: An image sensor includes a reference voltage generation unit that generates a reference voltage that alternately decreases and increases at a constant rate in an operation mode of the image sensor to convert analog signals of detected incident light to a digital value using the reference voltage to determine an intensity of the incident light with high sensitivity and high signal-to-noise ratio.

Abstract: In a source driver output circuit of a flat panel display device, first and second latch units receive image data and store the received image data. A D/A converter converts the image data into a data voltage. An output buffer unit outputs the data voltage to a data line. A switching control unit decides whether or not the data voltages of two image data of the same channel among image data of horizontal lines adjacent to each other, stored in the first and second latch units, belong to the same grayscale voltage range, and outputs a switching control signal based on the decided result. A multiplexer unit selects a pre-charge voltage in response to the switching control signal or continuously maintains a connection state between a corresponding channel of the output buffer unit and the corresponding data line.

Abstract: Provided are a semiconductor device and a method of fabricating a semiconductor device. The method includes providing a substrate having a channel region; forming a gate structure, which comprises a dummy gate pattern, on the substrate; forming first and second trenches by recessing the substrate on both sides of the gate structure, respectively; forming a first semiconductor pattern in the first and second trenches; removing the dummy gate pattern to expose a portion of the channel region; forming a recessed channel region by recessing the portion of the channel region; and forming a second semiconductor pattern in the recessed region.

Abstract: An analog to digital converter (ADC) can include a multi-input comparison unit configured to compare a pixel voltage from an image sensor, a comparison voltage comprising a stepped voltage modified during a coarse mode of operation, and a ramp voltage comprising a ramped voltage modified to one another during a fine mode of operation, to provide a comparison result signal that indicates whether the comparison voltage combined with the ramp voltage is greater than or less than the pixel voltage. A selection control signal generation unit can receive the comparison result signal and a mode control signal, to indicate the coarse or fine mode, to provide a selection control signal allowing modification of the comparison voltage in the coarse mode and to hold the comparison voltage constant in the fine mode. A reference voltage selection unit can receive the selection control signal to control modification of the comparison voltage.