Abstract: A data transmission device includes a control unit and a delay chain unit. The control unit outputs a first control signal through an nth control signal, where n is a natural number. The delay chain unit includes a first switching element through an nth switching element. The switching elements receive a first data signal through an nth data signal and perform pipelining operations on the first through nth data signals based upon the first through nth control signals, respectively, to output the pipelined data signals as at least one data stream. The switching elements are connected to each other to form at least one data delay chain.

Abstract: A semiconductor device includes a substrate, a pattern including a conductive layer and a hard mask layer stacked over the substrate, a capping layer surrounding sidewalls of the pattern, and a stress buffer layer disposed between the hard mask layer and the capping layer. The stress buffer layer is configured to inhibit transfer of stress between the hard mask layer and the capping layer during a thermal process so as to inhibit leaning of the capping layer.

Abstract: A method for requesting and reporting channel quality information (CQI) in a wireless portable Internet system is disclosed. Timing of a channel quality information request by a base station is determined, existence of an automatic repeat request acknowledgment (ARQ_ACK) message of downlink data is determined on requesting the channel quality information from the subscriber station, the automatic repeat request acknowledgment message and the radio resource for the channel quality report to the subscriber station is allocated, the automatic repeat request acknowledgment message and the channel quality report information is received, and a modulating and coding level of downlink data is determined by extracting the channel quality report information form the automatic repeat request acknowledgment message.

Abstract: An analog-to-digital converter including a comparator configured to compare a pixel signal received at a first input terminal of the comparator with a ramp signal received at a second input terminal of the comparator and generate a comparison signal as a result of the comparison; and a ramp signal supply circuit configured to provide the ramp signal to the comparator, wherein the ramp signal supply circuit generates a first signal as part of the ramp signal in response to the comparison signal and a first clock signal being received at the ramp signal supply circuit, wherein a slope of the first signal sequentially changes until the comparison signal makes a transition from one logic level to another and, after the transition, the ramp signal supply circuit generates a second signal as part of the ramp signal, wherein a slope of the second signal sequentially changes, wherein the slope of the second signal is opposite the slope of the first signal.

Abstract: An apparatus, system, and method for a capacitance change non-volatile memory device. The apparatus may include a substrate, a source region in the substrate, a drain region in the substrate, a tunnel oxide layer on the substrate substantially between the source region and the drain region, a floating gate layer on the tunnel oxide layer, a resistance changing material layer on the floating gate layer, and a control gate on the resistance changing material layer.

Abstract: A fin transistor includes fin active region, an isolation layer covering both sidewalls of a lower portion of the fin active region, a gate insulation layer disposed over a surface of the fin active region, and a gate electrode disposed over the gate insulation layer and the isolation layer, and having a work function ranging from approximately 4.4 eV to approximately 4.8 eV.

Abstract: A dielectric structure in a nonvolatile memory device and a method for fabricating the same are provided. The dielectric structure includes: a first oxide layer; a first high-k dielectric film formed on the first oxide layer, wherein the first high-k dielectric film includes one selected from materials with a dielectric constant of approximately 9 or higher and a compound of at least two of the materials; and a second oxide layer formed on the first high-k dielectric film.

Abstract: A method for fabricating a transistor including a bulb-type recess channel includes forming a bulb-type recess pattern in a substrate, forming a gate insulating layer over the substrate and the bulb-type recess pattern, forming a first gate conductive layer over the gate insulating layer, forming a void movement blocking layer over the first gate conductive layer in the bulb-type recess pattern, and forming a second gate conductive layer over the void movement blocking layer and the first gate conductive layer.

Abstract: A semiconductor memory device includes a titanium layer and a titanium nitride layer formed on a substrate, a thin layer formed on the titanium nitride layer, and a metal layer formed on the thin layer, wherein the thin layer increases a grain size of the metal layer.

Abstract: Disclosed is the development of a protein used as a biomarker for diagnosing IgA nephropathy and TGBM (thin-glomerular-basement-membrane) using urine through a target proteomics method. The disclosed development relates to a diagnosis biomarker protein and a kit for diagnosing IgA nephropathy and TGBM and predicting progress of the nephropathy in advance using the protein. The protein level is increased or decreased in urine from a patient with IgA nephropathy or TGBM nephropathy compared to urine from a normal patient. According to the disclosed development, the degree of the disease can be grasped by detecting IgA nephropathy and TGBM, enabling early diagnosis and confirming progress from the patient's urine. In addition, a monoclonal antibody produced based on the diagnosis biomarker protein can be used for an immunoassay kit (ELISA, antibody coated tube test, lateral-flow test, potable biosensor).

Abstract: A method for fabricating a semiconductor device includes forming a stacked layer including a tungsten layer, forming a hard mask pattern over the stacked layer, and oxidizing a surface of the hard mask pattern to form a stress buffer layer. A portion of the stacked layer uncovered by the hard mask pattern is removed using the hard mask pattern and the stress buffer layer as an etch mask, thereby forming a first resultant structure. A capping layer is formed over the first resultant structure, the capping layer is etched to retain the capping layer on sidewalls of the first resultant structure, and the remaining portion of the stacked layer uncovered by the hard mask pattern is removed.

Abstract: A method for requesting and reporting channel quality information (CQI) in a wireless portable Internet system is disclosed. Timing of a channel quality information request by a base station is determined, existence of an automatic repeat request acknowledgment (ARQ_ACK) message of downlink data is determined on requesting the channel quality information from the subscriber station, the automatic repeat request acknowledgment message and the radio resource for the channel quality report to the subscriber station is allocated, the automatic repeat request acknowledgment message and the channel quality report information is received, and a modulating and coding level of downlink data is determined by extracting the channel quality report information from the automatic repeat request acknowledgment message.

Abstract: A method for fabricating a semiconductor device includes forming a first conductive layer over a substrate, forming an intermediate structure over the first conductive layer, the intermediate structure formed in a stack structure comprising at least a first metal layer and a nitrogen containing metal silicide layer, and forming a second conductive layer over the intermediate structure.

Abstract: An example process to remove spacers from the gate of a NMOS transistor. A stress creating layer is formed over the NMOS and PMOS transistors and the substrate. In an embodiment, the spacers on gate are removed so that stress layer is closer to the channel of the device. The stress creating layer is preferably a tensile nitride layer. The stress creating layer is preferably a contact etch stop liner layer. In an embodiment, the gates, source and drain region have a silicide layer thereover before the stress creating layer is formed. The embodiment improves the performance of the NMOS transistors.

Abstract: A semiconductor memory device includes a titanium layer and a titanium nitride layer formed on a substrate, a thin layer formed on the titanium nitride layer, and a metal layer formed on the thin layer, wherein the thin layer increases a grain size of the metal layer.

Abstract: A semiconductor device includes a first conductive layer, a first intermediate structure over the first conductive layer, a second intermediate structure over the first intermediate structure, and a second conductive layer over the second intermediate structure. The first intermediate structure includes a metal silicide layer and a nitrogen containing metal layer. The second intermediate structure includes at least a nitrogen containing metal silicide layer.

Abstract: In a double data rate (DDR) counter and counting method used in, for example, an analog-to-digital conversion in, for example, a CMOS image sensor and method, a first stage of the counter generates a least significant bit (LSB) of the value in the counter. The first stage includes a first clock input and is edge-triggered on one of the rising and falling edges of a signal applied at the first clock input. The counter includes at least one second stage for generating another bit of the value in the counter. The second stage includes a second clock input and is edge-triggered on the other of the rising and falling edges of a signal applied at the second clock input.

Abstract: The present invention provides a composition comprising: at least one viscosity-enhancing agent; and at least one macromonomer. In particular, the composition may be a bone cement composition and/or a dental cement composition. The composition may be used in medicine. The composition may be used in orthopedic and/or periodontal applications. The present invention also provides uses of the composition.

Abstract: Disclosed is a control method of user equipment (UE) to deregister a personal network element (PNE) in a personal network (PN), the control method including receiving a deregistration request message from the PNE via a personal area network (PAN) internal communication means in order to deregister the PNE registered to the PN and subordinate to the UE, transmitting a request message for deregistration of the PNE to a session control device controlling a session with respect to the PN in response to the deregistration request message, receiving a response message corresponding to the request message for deregistration of the PNE from the session control device, and transmitting the response message to the PNE via the PAN internal communication means in order to notifying deregistration of the PNE.

Abstract: A liquid crystal display according to an exemplary embodiment of the present invention includes: a first substrate; a first signal line disposed on the first substrate; a thin film transistor connected to the first signal line; a color filter and a light blocking member disposed on the first substrate; a pixel electrode disposed on the color filter and the light blocking member; and a colored member formed on the pixel electrode and disposed on the light blocking member, the colored member having an upper surface that is generally planar with an upper surface of the color filter.