Patents by Inventor Yong Lim

Yong Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Transistor including bulb-type recess channel and method for fabricating the same
    Patent number: 8048742
    Abstract: A method for fabricating a transistor including a bulb-type recess channel includes forming a bulb-type recess pattern in a substrate, forming a gate insulating layer over the substrate and the bulb-type recess pattern, forming a first gate conductive layer over the gate insulating layer, forming a void movement blocking layer over the first gate conductive layer in the bulb-type recess pattern, and forming a second gate conductive layer over the void movement blocking layer and the first gate conductive layer.
    Type: Grant
    Filed: June 29, 2007
    Date of Patent: November 1, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Kwan-Yong Lim, Hong-Seon Yang, Dong-Sun Sheen, Se-Aug Jang, Heung-Jae Cho, Yong-Soo Kim, Min-Gyu Sung, Tae-Yoon Kim
  • Dielectric structure in nonvolatile memory device and method for fabricating the same
    Patent number: 8049268
    Abstract: A dielectric structure in a nonvolatile memory device and a method for fabricating the same are provided. The dielectric structure includes: a first oxide layer; a first high-k dielectric film formed on the first oxide layer, wherein the first high-k dielectric film includes one selected from materials with a dielectric constant of approximately 9 or higher and a compound of at least two of the materials; and a second oxide layer formed on the first high-k dielectric film.
    Type: Grant
    Filed: March 29, 2010
    Date of Patent: November 1, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Kwon Hong, Kwan-Yong Lim
  • METHOD FOR FABRICATING SEMICONDUCTOR MEMORY DEVICE
    Publication number: 20110256388
    Abstract: A semiconductor memory device includes a titanium layer and a titanium nitride layer formed on a substrate, a thin layer formed on the titanium nitride layer, and a metal layer formed on the thin layer, wherein the thin layer increases a grain size of the metal layer.
    Type: Application
    Filed: June 28, 2011
    Publication date: October 20, 2011
    Inventors: Kwan-Yong LIM, Min-Gyu SUNG, Heung-Jae CHO
  • COMPOSTION AND KIT FOR DIAGNOSING IMMUNOGLOBULIN A NEPHROPATHY AND TGBM NEPHROPATHY
    Publication number: 20110236913
    Abstract: Disclosed is the development of a protein used as a biomarker for diagnosing IgA nephropathy and TGBM (thin-glomerular-basement-membrane) using urine through a target proteomics method. The disclosed development relates to a diagnosis biomarker protein and a kit for diagnosing IgA nephropathy and TGBM and predicting progress of the nephropathy in advance using the protein. The protein level is increased or decreased in urine from a patient with IgA nephropathy or TGBM nephropathy compared to urine from a normal patient. According to the disclosed development, the degree of the disease can be grasped by detecting IgA nephropathy and TGBM, enabling early diagnosis and confirming progress from the patient's urine. In addition, a monoclonal antibody produced based on the diagnosis biomarker protein can be used for an immunoassay kit (ELISA, antibody coated tube test, lateral-flow test, potable biosensor).
    Type: Application
    Filed: September 30, 2009
    Publication date: September 29, 2011
    Applicant: KYUNGPOOK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION
    Inventors: Moon Chang Baek, Pyong Gon Moon, Yong Lim Kim
  • Semiconductor device and method for fabricating the same
    Patent number: 8021969
    Abstract: A method for fabricating a semiconductor device includes forming a stacked layer including a tungsten layer, forming a hard mask pattern over the stacked layer, and oxidizing a surface of the hard mask pattern to form a stress buffer layer. A portion of the stacked layer uncovered by the hard mask pattern is removed using the hard mask pattern and the stress buffer layer as an etch mask, thereby forming a first resultant structure. A capping layer is formed over the first resultant structure, the capping layer is etched to retain the capping layer on sidewalls of the first resultant structure, and the remaining portion of the stacked layer uncovered by the hard mask pattern is removed.
    Type: Grant
    Filed: December 28, 2007
    Date of Patent: September 20, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Min-Gyu Sung, Heung-Jae Cho, Kwan-Yong Lim
  • Method for requesting and reporting channel quality information in wireless portable internet system
    Patent number: 8018911
    Abstract: A method for requesting and reporting channel quality information (CQI) in a wireless portable Internet system is disclosed. Timing of a channel quality information request by a base station is determined, existence of an automatic repeat request acknowledgment (ARQ_ACK) message of downlink data is determined on requesting the channel quality information from the subscriber station, the automatic repeat request acknowledgment message and the radio resource for the channel quality report to the subscriber station is allocated, the automatic repeat request acknowledgment message and the channel quality report information is received, and a modulating and coding level of downlink data is determined by extracting the channel quality report information from the automatic repeat request acknowledgment message.
    Type: Grant
    Filed: February 2, 2005
    Date of Patent: September 13, 2011
    Assignees: Electronics and Telecommunications Research Insitiute, Samsung Electronics Co., Ltd, KT Corporation, SK Telecom Co., Ltd, KT Freetel Co., Ltd, Hanaro Telecom, Inc.
    Inventors: Chul-Sik Yoon, Jae-Heung Kim, Kun-Min Yeo, Soon-Yong Lim, Byung-Han Ryu
  • Method for fabricating semiconductor device with an intermediate stack structure
    Patent number: 8008178
    Abstract: A method for fabricating a semiconductor device includes forming a first conductive layer over a substrate, forming an intermediate structure over the first conductive layer, the intermediate structure formed in a stack structure comprising at least a first metal layer and a nitrogen containing metal silicide layer, and forming a second conductive layer over the intermediate structure.
    Type: Grant
    Filed: December 7, 2007
    Date of Patent: August 30, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Kwan-Yong Lim, Hong-Seon Yang, Heung-Jae Cho, Tae-Kyung Kim, Yong-Soo Kim, Min-Gyu Sung
  • Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOS
    Patent number: 7999325
    Abstract: An example process to remove spacers from the gate of a NMOS transistor. A stress creating layer is formed over the NMOS and PMOS transistors and the substrate. In an embodiment, the spacers on gate are removed so that stress layer is closer to the channel of the device. The stress creating layer is preferably a tensile nitride layer. The stress creating layer is preferably a contact etch stop liner layer. In an embodiment, the gates, source and drain region have a silicide layer thereover before the stress creating layer is formed. The embodiment improves the performance of the NMOS transistors.
    Type: Grant
    Filed: September 30, 2008
    Date of Patent: August 16, 2011
    Assignee: Globalfoundries Singapore Pte. Ltd.
    Inventors: Young Way Teh, Yong Meng Lee, Chung Woh Lai, Wenhe Lin, Khee Yong Lim, Wee Leng Tan, John Sudijono, Hui Peng Koh, Liang Choo Hsia
  • Method for forming barrier metal layer of bit line in semiconductor memory device
    Patent number: 7994558
    Abstract: A semiconductor memory device includes a titanium layer and a titanium nitride layer formed on a substrate, a thin layer formed on the titanium nitride layer, and a metal layer formed on the thin layer, wherein the thin layer increases a grain size of the metal layer.
    Type: Grant
    Filed: August 28, 2006
    Date of Patent: August 9, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Kwan-Yong Lim, Min-Gyu Sung, Heung-Jae Cho
  • SEMICONDUCTOR DEVICE WITH GATE STACK STRUCTURE
    Publication number: 20110186920
    Abstract: A semiconductor device includes a first conductive layer, a first intermediate structure over the first conductive layer, a second intermediate structure over the first intermediate structure, and a second conductive layer over the second intermediate structure. The first intermediate structure includes a metal silicide layer and a nitrogen containing metal layer. The second intermediate structure includes at least a nitrogen containing metal silicide layer.
    Type: Application
    Filed: March 8, 2011
    Publication date: August 4, 2011
    Applicant: Hynix Semiconductor Inc.
    Inventors: Kwan-Yong LIM, Hong-Seon Yang, Heung-Jae Cho, Tae-Kyung Kim, Yong-Soo Kim, Min-Gyu Sung
  • Double data rate (DDR) counter, analog-to-digital converter (ADC) using the same, CMOS image sensor using the same and methods in DDR counter, ADC and CMOS image sensor
    Patent number: 7990304
    Abstract: In a double data rate (DDR) counter and counting method used in, for example, an analog-to-digital conversion in, for example, a CMOS image sensor and method, a first stage of the counter generates a least significant bit (LSB) of the value in the counter. The first stage includes a first clock input and is edge-triggered on one of the rising and falling edges of a signal applied at the first clock input. The counter includes at least one second stage for generating another bit of the value in the counter. The second stage includes a second clock input and is edge-triggered on the other of the rising and falling edges of a signal applied at the second clock input.
    Type: Grant
    Filed: November 13, 2009
    Date of Patent: August 2, 2011
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong Lim, Kyoung-Min Koh, Kyung-Min Kim
  • BONE AND/OR DENTAL CEMENT COMPOSITION AND USES THEREOF
    Publication number: 20110136935
    Abstract: The present invention provides a composition comprising: at least one viscosity-enhancing agent; and at least one macromonomer. In particular, the composition may be a bone cement composition and/or a dental cement composition. The composition may be used in medicine. The composition may be used in orthopedic and/or periodontal applications. The present invention also provides uses of the composition.
    Type: Application
    Filed: August 30, 2007
    Publication date: June 9, 2011
    Applicants: NATIONAL UNIVERSITY OF SINGAPORE, SINGAPORE HEALTH SERVICES PTE LTD
    Inventors: Eugene Khor, Chang Ming Guo, Hong Wu, Lee Yong Lim
  • METHOD AND APPARATUS FOR DEREGISTRATION OF PERSONAL NETWORK ELEMENT(PNE) IN 3GPP PERSONAL NETWORK(PN)
    Publication number: 20110117914
    Abstract: Disclosed is a control method of user equipment (UE) to deregister a personal network element (PNE) in a personal network (PN), the control method including receiving a deregistration request message from the PNE via a personal area network (PAN) internal communication means in order to deregister the PNE registered to the PN and subordinate to the UE, transmitting a request message for deregistration of the PNE to a session control device controlling a session with respect to the PN in response to the deregistration request message, receiving a response message corresponding to the request message for deregistration of the PNE from the session control device, and transmitting the response message to the PNE via the PAN internal communication means in order to notifying deregistration of the PNE.
    Type: Application
    Filed: November 9, 2010
    Publication date: May 19, 2011
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Mi Jeong YANG, Soon Yong LIM, Kyung-yul CHEON, Hyeyeon KWON, Aesoon PARK
  • LIQUID CRYSTAL DISPLAY
    Publication number: 20110085103
    Abstract: A liquid crystal display according to an exemplary embodiment of the present invention includes: a first substrate; a first signal line disposed on the first substrate; a thin film transistor connected to the first signal line; a color filter and a light blocking member disposed on the first substrate; a pixel electrode disposed on the color filter and the light blocking member; and a colored member formed on the pixel electrode and disposed on the light blocking member, the colored member having an upper surface that is generally planar with an upper surface of the color filter.
    Type: Application
    Filed: October 1, 2010
    Publication date: April 14, 2011
    Inventors: Seung-Suk YANG, Young-Goo Song, Jae-Yong Lim, In-Ho Park, Kyung-Suk Jung
  • CALLER AUTHENTICATION SYSTEM AND METHOD FOR PHISHING PREVENTION
    Publication number: 20110085650
    Abstract: A caller authentication system that may enable a called party to be provided with identification information of a caller may be provided. The caller authentication system, including: a communication system to transmit, when a call request signal is received from a calling terminal of a caller, network information and a telephone number of the calling terminal to a certificate authority server, and to request identification of the caller, the network information and the telephone number being included in the call request signal, to transmit, when identification information of the caller is received from the certificate authority server in response to the identification request, the identification information to a called terminal of a called party, and to enable the identification information to be displayed on the called terminal.
    Type: Application
    Filed: July 13, 2010
    Publication date: April 14, 2011
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Kyung-yul CHEON, Soon Yong LIM, Aesoon PARK
  • DOME SHEET STRUCTURE INCLUDING LIGHT GUIDE FILM AND MOBILE COMMUNICATION TERMINAL INCLUDING THE DOME SHEET STRUCTURE
    Publication number: 20110079499
    Abstract: A dome sheet structure of a mobile communication terminal may include: a metal dome covering a contact point printed on a printed circuit board; and a light guide film disposed on the metal dome. The light guide film may be bonded with the metal dome in a bonding area, and the bonding area may be an area between two concentric circles having different diameters and centered at a center of the metal dome.
    Type: Application
    Filed: July 7, 2010
    Publication date: April 7, 2011
    Applicant: Pantech Co., Ltd.
    Inventors: Choon Kwon KANG, Myoung Hoon Kwak, Sebastian Kim, Ki Tae Park, Byung Ho Song, Po Sik Yang, Tae Yong Lim
  • SEMICONDUCTOR DEVICE WITH BULB-TYPE RECESSED CHANNEL AND METHOD FOR FABRICATING THE SAME
    Publication number: 20110068380
    Abstract: A method for fabricating a semiconductor device includes providing a substrate having a bulb-type recessed region, forming a gate insulating layer over the bulb-type recessed region and the substrate, and forming a gate conductive layer over the gate insulating layer. The gate conductive layer fills the bulb-type recessed region. The gate conductive layer includes two or more conductive layers and a discontinuous interface between the conductive layers.
    Type: Application
    Filed: November 23, 2010
    Publication date: March 24, 2011
    Applicant: Hynix Semiconductor Inc.
    Inventors: Yong-Soo KIM, Hong-Seon YANG, Se-Aug JANG, Seung-Ho PYI, Kwon HONG, Heung-Jae CHO, Kwan-Yong LIM, Min-Gyu SUNG, Seung-Ryong LEE, Tae-Yoon KIM
  • Method and apparatus for controlling power saving mode in wireless portable internet system
    Patent number: 7912467
    Abstract: Disclosed is a method and device for controlling a power saving mode for applying the sleep mode for saving power consumption to the mobility of subscriber stations in a mobile communication network and a wireless Internet system. Subscriber stations entering the sleep mode are constantly grouped, listening intervals of the subscriber stations for each group are not superimposed, the existence state of traffic in the subscriber stations is independently notified for each group, and the overhead of signaling messages is minimized when the traffic is notified to the subscriber station in the sleep mode.
    Type: Grant
    Filed: December 24, 2004
    Date of Patent: March 22, 2011
    Assignees: Electronics and Telecommunications Research Institute, Samsung Electronics Co., Ltd., KT Corporation, SK Telecom Co., Ltd., KTFreetel Co., Ltd., Hanaro Telecom, Inc.
    Inventors: Chul-Sik Yoon, Jae-Heung Kim, Kun-Min Yeo, Soon-Yong Lim, Byung-Han Ryu
  • Semiconductor device with gate stack structure
    Patent number: 7902614
    Abstract: A semiconductor device includes a first conductive layer, a first intermediate structure over the first conductive layer, a second intermediate structure over the first intermediate structure, and a second conductive layer over the second intermediate structure. The first intermediate structure includes a metal silicide layer and a nitrogen containing metal layer. The second intermediate structure includes at least a nitrogen containing metal silicide layer.
    Type: Grant
    Filed: September 26, 2007
    Date of Patent: March 8, 2011
    Assignee: Hynix Semiconductor Inc.
    Inventors: Kwan-Yong Lim, Hong-Seon Yang, Heung-Jae Cho, Tae-Kyung Kim, Yong-Soo Kim, Min-Gyu Sung
  • IN-FLIGHT PROGRAMMING OF TRIGGER TIME OF A PROJECTILE
    Publication number: 20110048218
    Abstract: The present invention describes methods for programming trigger time of a projectile (60) based on remaining flight time to a target (P) after the projectile (60) is airborne. The actual muzzle (Vo) and flight speeds (V1, V2, etc.) are independently determined and compared to those used by the ballistic computer (30), and a better estimate of trigger time is accordingly used to activate detonation of the projectile (60). In one embodiment, a Kalman algorithm is used to provide a better estimate of the projectile's flight speeds obtained by independent methods to provide the better estimate of the trigger time.
    Type: Application
    Filed: February 18, 2009
    Publication date: March 3, 2011
    Inventors: Thomas Yong Lim Ang, Say Him Ng, Cheng Hok Aw