Abstract: A semiconductor device is formed with a gate pattern formed on a substrate, and a recrystallized region having a stacking fault defect in the substrate at one side of the gate pattern. The semiconductor device can have a reduced leakage current and improved channel conductivity.

Abstract: An analog-to-digital converter (ADC) within an image sensor includes a comparator comparing a ramp signal with an image signal, and a counter generating a count result in response to the comparison by counting a clock during a counting interval. The ADC determines whether a first counting interval for the counter is less than a reference interval, and if the first counting interval is less than the reference interval the counting interval is a first counting interval, else the counting interval is a second counting interval.

Abstract: Provided is a communication method of a base station for random access resource allocation, the communication method including broadcasting system information (SI) that includes information about an extra physical random access channel (xPRACH) of a machine type communication (MTC) terminal and information about a physical random access channel (PRACH) of a general terminal, each of the xPRACH of the MTC terminal and the PRACH of the general terminal having a separated resource space, and receiving a random access attempt from the MTC terminal in response to the broadcast.

Abstract: A method for forming a device with both PFET and NFET transistors using a PFET compressive etch stop liner and a NFET tensile etch stop liner and two anneals in a deuterium containing atmosphere. The method comprises: providing a NFET transistor in a NFET region and a PFET transistor in a PFET region. We form a NFET tensile contact etch-stop liner over the NFET region. Then we perform a first deuterium anneal. We form a PFET compressive etch stop liner over the PFET region. We form a (ILD) dielectric layer with contact openings over the substrate. We perform a second deuterium anneal. The temperature of the second deuterium anneal is less than the temperature of the first deuterium anneal.

Abstract: A method of k*k subsampling, where k is an integer greater than one, a full frame readout on a plurality of pixels arranged in rows and columns, each pixel belonging to one of at least two sets, a first set configured to sense a first value of an image parameter and a second set configured to sense a second value of the image parameter, the method including sampling signals of k pixels of at least one set in a first row to output subsampled signals, converting the subsampled signals into digital signals having a lower resolution than the full frame readout, repeating sampling and converting for k rows, and adding digital signals for the first to kth rows within the at least one set.

Abstract: Provided are a group control method for providing a machine type communication (MTC) service, and a mobile communication system using the method. The group control method includes categorizing one or more MTC devices into one or more MTC groups, assigning MTC group identifiers to respective MTC groups, setting MTC radio network temporary identifiers (MTC RNTIs) according to the MTC group Identifiers, and using the MTC_RNTIs for addressing the MTC devices belonging to the respective MTC groups.

Abstract: In one embodiment of a pixel array, the pixel array includes a plurality of pixels arranged in columns, and a plurality of read out lines are associated with the plurality of pixels such that each column of pixels has at least two read out lines associated therewith. For each column of pixels, the two associated read out lines are configured to transfer signals in a same direction. A read out circuit for a pixel array according to one embodiment includes at least first and second capacitors, and a switching structure configured to selectively connect the first and second read out lines associated with a same column of pixels in the pixel array to the first and second capacitors.

Abstract: A counter array and an image sensor including the same may be provided. The counter array may include a controller and a plurality of counter units. The controller may output an operation control signal and a direction indication signal. The counter units hold previous output values or may perform a counting operation in response to the operation control signal and may perform an up-count operation or a down-count operation in response to the direction indication signal when performing the counting operation.

Abstract: In one embodiment, the counter circuit is associated with a pixel array and includes a plurality of counting circuits. Each counting circuit is configured to receive an associated input signal, and each input signal is associated with a different column of the pixel array. A first of the plurality of counting circuits is configured to count based on the associated input signal. Each subsequent counting circuit in the plurality of counting circuits is configured to count based on a difference between the associated input signal and the input signal associated with a preceding counting circuit.

Abstract: A method of manufacturing a semiconductor device can be provided by forming a gate structure on a substrate and forming a diffusion barrier layer on the gate structure and the substrate, A stress layer can be formed on the diffusion barrier layer comprising a metal nitride or a metal oxide having a concentration of nitrogen or oxygen associated therewith. The stress layer can be heated to transform the stress layer into a tensile stress layer to reduce the concentration of the nitrogen or the oxygen in the stress layer. The tensile stress layer and the diffusion barrier layer can be removed.

Abstract: A tilt slide module and a mobile communication terminal having the same includes a lower slide plate, an upper slide plate coupled to the lower slide plate to move in a sliding manner with respect to the lower slide plate wherein the upper slide plate is overlapped with the lower slide plate, a fixing piece wherein a hinge shaft is inserted in a hole provided thereon, and a tilt guide coupled to the fixing piece by the hinge shaft to be rotated about the hinge shaft.

Abstract: Disclosed herein are a system and a method for providing multimedia services capable of providing various types of multimedia contents and information sensed at multi-points to users at a high rate and in real time at the time of providing the multimedia contents and sense scene representation and sensory effects for multimedia contents corresponding to multimedia services through the multi-points according to service requests of the multimedia services that users want to receive, encode and transmit the sensed information for scene representation and sensory effects with binary representation according to the sensing, transmit device command data for the sensed scene representation and sensory effects, drive and control user devices according the device command data to provide the scene representation and the sensory effects for the multimedia contents to the users.

Abstract: A method of forming a transistor induces stress in the channel region using a stress memorization technique (SMT). Impurities are implanted into a substrate adjacent a gate electrode structure to produce an amorphous region adjacent the channel region. The amorphous region is then recrystallized by forming a metal-oxide layer over the amorphous region, and then thermally treating the same. The crystallization creates compressive stress in the amorphous region. As a result, stress is induced in the channel region of the substrate located under the gate electrode structure.

Abstract: A method for fabricating a transistor including a bulb-type recess channel includes forming a bulb-type recess pattern in a substrate, forming a gate insulating layer over the substrate and the bulb-type recess pattern, forming a first gate conductive layer over the gate insulating layer, forming a void movement blocking layer over the first gate conductive layer in the bulb-type recess pattern, and forming a second gate conductive layer over the void movement blocking layer and the first gate conductive layer.

Abstract: A semiconductor device includes a substrate, a pattern including a conductive layer and a hard mask layer stacked over the substrate, a capping layer surrounding sidewalls of the pattern, and a stress buffer layer disposed between the hard mask layer and the capping layer. The stress buffer layer is configured to inhibit transfer of stress between the hard mask layer and the capping layer during a thermal process so as to inhibit leaning of the capping layer.

Abstract: A data transmission device includes a control unit and a delay chain unit. The control unit outputs a first control signal through an nth control signal, where n is a natural number. The delay chain unit includes a first switching element through an nth switching element. The switching elements receive a first data signal through an nth data signal and perform pipelining operations on the first through nth data signals based upon the first through nth control signals, respectively, to output the pipelined data signals as at least one data stream. The switching elements are connected to each other to form at least one data delay chain.

Abstract: A method for requesting and reporting channel quality information (CQI) in a wireless portable Internet system is disclosed. Timing of a channel quality information request by a base station is determined, existence of an automatic repeat request acknowledgment (ARQ_ACK) message of downlink data is determined on requesting the channel quality information from the subscriber station, the automatic repeat request acknowledgment message and the radio resource for the channel quality report to the subscriber station is allocated, the automatic repeat request acknowledgment message and the channel quality report information is received, and a modulating and coding level of downlink data is determined by extracting the channel quality report information form the automatic repeat request acknowledgment message.

Abstract: An analog-to-digital converter including a comparator configured to compare a pixel signal received at a first input terminal of the comparator with a ramp signal received at a second input terminal of the comparator and generate a comparison signal as a result of the comparison; and a ramp signal supply circuit configured to provide the ramp signal to the comparator, wherein the ramp signal supply circuit generates a first signal as part of the ramp signal in response to the comparison signal and a first clock signal being received at the ramp signal supply circuit, wherein a slope of the first signal sequentially changes until the comparison signal makes a transition from one logic level to another and, after the transition, the ramp signal supply circuit generates a second signal as part of the ramp signal, wherein a slope of the second signal sequentially changes, wherein the slope of the second signal is opposite the slope of the first signal.

Abstract: An apparatus, system, and method for a capacitance change non-volatile memory device. The apparatus may include a substrate, a source region in the substrate, a drain region in the substrate, a tunnel oxide layer on the substrate substantially between the source region and the drain region, a floating gate layer on the tunnel oxide layer, a resistance changing material layer on the floating gate layer, and a control gate on the resistance changing material layer.

Abstract: A fin transistor includes fin active region, an isolation layer covering both sidewalls of a lower portion of the fin active region, a gate insulation layer disposed over a surface of the fin active region, and a gate electrode disposed over the gate insulation layer and the isolation layer, and having a work function ranging from approximately 4.4 eV to approximately 4.8 eV.