Patents by Inventor Yong Lim

Yong Lim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120165058
    Abstract: Provided are an apparatus and method for controlling random access of a machine type communication (MTC) device in a wireless communication network providing an MTC service, and a wireless communication system providing an MTC service. The method includes inserting, at a base station, information about a random access preamble group for an MTC device and information about a random access time for an MTC device in system information (SI), and transmitting, at the base station, the SI to at least one MTC device.
    Type: Application
    Filed: December 22, 2011
    Publication date: June 28, 2012
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: You Sun HWANG, Kyung Yul CHEON, Soon Yong LIM, Ae Soon PARK
  • Publication number: 20120157141
    Abstract: Provided is a contention based uplink transmission method. A base station may assign a contention based radio network temporary identifier (CB-RNTI) to a plurality of terminals, and terminals assigned with the same CB-RNTI may perform contention uplink transmission using the same radio resource.
    Type: Application
    Filed: December 21, 2011
    Publication date: June 21, 2012
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Soon Yong LIM, Mi Jeong YANG, Ae Soon PARK
  • Publication number: 20120140089
    Abstract: An image sensor includes a reference voltage generation unit that generates a reference voltage that alternately decreases and increases at a constant rate in an operation mode of the image sensor to convert analog signals of detected incident light to a digital value using the reference voltage to determine an intensity of the incident light with high sensitivity and high signal-to-noise ratio.
    Type: Application
    Filed: December 6, 2011
    Publication date: June 7, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kyoung-Min KOH, Seog-Heon Ham, Yong Lim
  • Publication number: 20120135576
    Abstract: Provided are a semiconductor device and a method of fabricating a semiconductor device. The method includes providing a substrate having a channel region; forming a gate structure, which comprises a dummy gate pattern, on the substrate; forming first and second trenches by recessing the substrate on both sides of the gate structure, respectively; forming a first semiconductor pattern in the first and second trenches; removing the dummy gate pattern to expose a portion of the channel region; forming a recessed channel region by recessing the portion of the channel region; and forming a second semiconductor pattern in the recessed region.
    Type: Application
    Filed: September 23, 2011
    Publication date: May 31, 2012
    Inventors: Hyun-Jung Lee, Young-Pil Kim, Jin-Bum Kim, Sang-Bom Kang, Kwan-Yong Lim
  • Publication number: 20120133631
    Abstract: In a source driver output circuit of a flat panel display device, first and second latch units receive image data and store the received image data. A D/A converter converts the image data into a data voltage. An output buffer unit outputs the data voltage to a data line. A switching control unit decides whether or not the data voltages of two image data of the same channel among image data of horizontal lines adjacent to each other, stored in the first and second latch units, belong to the same grayscale voltage range, and outputs a switching control signal based on the decided result. A multiplexer unit selects a pre-charge voltage in response to the switching control signal or continuously maintains a connection state between a corresponding channel of the output buffer unit and the corresponding data line.
    Type: Application
    Filed: November 21, 2011
    Publication date: May 31, 2012
    Applicant: SILICON WORKS CO., LTD
    Inventors: Hun-Yong Lim, Ji-Hun Kim, Hyun-Min Song, Sang-Woo Kim, Joon-Ho Na
  • Publication number: 20120113286
    Abstract: An analog to digital converter (ADC) can include a multi-input comparison unit configured to compare a pixel voltage from an image sensor, a comparison voltage comprising a stepped voltage modified during a coarse mode of operation, and a ramp voltage comprising a ramped voltage modified to one another during a fine mode of operation, to provide a comparison result signal that indicates whether the comparison voltage combined with the ramp voltage is greater than or less than the pixel voltage. A selection control signal generation unit can receive the comparison result signal and a mode control signal, to indicate the coarse or fine mode, to provide a selection control signal allowing modification of the comparison voltage in the coarse mode and to hold the comparison voltage constant in the fine mode. A reference voltage selection unit can receive the selection control signal to control modification of the comparison voltage.
    Type: Application
    Filed: October 11, 2011
    Publication date: May 10, 2012
    Inventors: Seung-Hyun LIM, Kwi-Sung YOO, Kyoung-Min KOH, Yu-Jin PARK, Chi-Ho HWANG, Yong LIM
  • Publication number: 20120108023
    Abstract: A semiconductor device is formed with a gate pattern formed on a substrate, and a recrystallized region having a stacking fault defect in the substrate at one side of the gate pattern. The semiconductor device can have a reduced leakage current and improved channel conductivity.
    Type: Application
    Filed: September 22, 2011
    Publication date: May 3, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kwan-Yong Lim, Chung-Geun Koh, Sang-Bom Kang, Ui-Hui Kwon, Hyun-Jung Lee, Tae-Ouk Kwon, Seok-Hoon Kim
  • Publication number: 20120099543
    Abstract: Provided is a communication method of a base station for random access resource allocation, the communication method including broadcasting system information (SI) that includes information about an extra physical random access channel (xPRACH) of a machine type communication (MTC) terminal and information about a physical random access channel (PRACH) of a general terminal, each of the xPRACH of the MTC terminal and the PRACH of the general terminal having a separated resource space, and receiving a random access attempt from the MTC terminal in response to the broadcast.
    Type: Application
    Filed: October 20, 2011
    Publication date: April 26, 2012
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Mi Jeong YANG, Soon Yong LIM, Aesoon PARK
  • Publication number: 20120097840
    Abstract: An analog-to-digital converter (ADC) within an image sensor includes a comparator comparing a ramp signal with an image signal, and a counter generating a count result in response to the comparison by counting a clock during a counting interval. The ADC determines whether a first counting interval for the counter is less than a reference interval, and if the first counting interval is less than the reference interval the counting interval is a first counting interval, else the counting interval is a second counting interval.
    Type: Application
    Filed: October 19, 2011
    Publication date: April 26, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Jin Woo Kim, Seog Heon Ham, Kyung-Min Kim, Yong Lim
  • Patent number: 8148221
    Abstract: A method for forming a device with both PFET and NFET transistors using a PFET compressive etch stop liner and a NFET tensile etch stop liner and two anneals in a deuterium containing atmosphere. The method comprises: providing a NFET transistor in a NFET region and a PFET transistor in a PFET region. We form a NFET tensile contact etch-stop liner over the NFET region. Then we perform a first deuterium anneal. We form a PFET compressive etch stop liner over the PFET region. We form a (ILD) dielectric layer with contact openings over the substrate. We perform a second deuterium anneal. The temperature of the second deuterium anneal is less than the temperature of the first deuterium anneal.
    Type: Grant
    Filed: October 19, 2009
    Date of Patent: April 3, 2012
    Assignees: GLOBALFOUNDRIES Singapore Pte. Ltd.
    Inventors: Khee Yong Lim, Victor Chan, Eng Hua Lim, Wenhe Lin, Jamin F. Fen
  • Patent number: 8149289
    Abstract: A method of k*k subsampling, where k is an integer greater than one, a full frame readout on a plurality of pixels arranged in rows and columns, each pixel belonging to one of at least two sets, a first set configured to sense a first value of an image parameter and a second set configured to sense a second value of the image parameter, the method including sampling signals of k pixels of at least one set in a first row to output subsampled signals, converting the subsampled signals into digital signals having a lower resolution than the full frame readout, repeating sampling and converting for k rows, and adding digital signals for the first to kth rows within the at least one set.
    Type: Grant
    Filed: May 29, 2009
    Date of Patent: April 3, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong Lim, Kyoung Min Koh, Soo Youn Kim
  • Publication number: 20120064932
    Abstract: Provided are a group control method for providing a machine type communication (MTC) service, and a mobile communication system using the method. The group control method includes categorizing one or more MTC devices into one or more MTC groups, assigning MTC group identifiers to respective MTC groups, setting MTC radio network temporary identifiers (MTC RNTIs) according to the MTC group Identifiers, and using the MTC_RNTIs for addressing the MTC devices belonging to the respective MTC groups.
    Type: Application
    Filed: September 12, 2011
    Publication date: March 15, 2012
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Soon Yong LIM, Mi Jeong YANG, Ae Soon PARK
  • Publication number: 20120049042
    Abstract: In one embodiment of a pixel array, the pixel array includes a plurality of pixels arranged in columns, and a plurality of read out lines are associated with the plurality of pixels such that each column of pixels has at least two read out lines associated therewith. For each column of pixels, the two associated read out lines are configured to transfer signals in a same direction. A read out circuit for a pixel array according to one embodiment includes at least first and second capacitors, and a switching structure configured to selectively connect the first and second read out lines associated with a same column of pixels in the pixel array to the first and second capacitors.
    Type: Application
    Filed: January 24, 2011
    Publication date: March 1, 2012
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Yong Lim, Kwang Hyun Lee
  • Patent number: 8115845
    Abstract: A counter array and an image sensor including the same may be provided. The counter array may include a controller and a plurality of counter units. The controller may output an operation control signal and a direction indication signal. The counter units hold previous output values or may perform a counting operation in response to the operation control signal and may perform an up-count operation or a down-count operation in response to the direction indication signal when performing the counting operation.
    Type: Grant
    Filed: January 30, 2009
    Date of Patent: February 14, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Kyoung Min Koh, Kyung-Min Kim, Yong Lim
  • Publication number: 20120033097
    Abstract: In one embodiment, the counter circuit is associated with a pixel array and includes a plurality of counting circuits. Each counting circuit is configured to receive an associated input signal, and each input signal is associated with a different column of the pixel array. A first of the plurality of counting circuits is configured to count based on the associated input signal. Each subsequent counting circuit in the plurality of counting circuits is configured to count based on a difference between the associated input signal and the input signal associated with a preceding counting circuit.
    Type: Application
    Filed: November 11, 2010
    Publication date: February 9, 2012
    Inventors: Yong LIM, Chi Ho Hwang
  • Publication number: 20120034749
    Abstract: A method of manufacturing a semiconductor device can be provided by forming a gate structure on a substrate and forming a diffusion barrier layer on the gate structure and the substrate, A stress layer can be formed on the diffusion barrier layer comprising a metal nitride or a metal oxide having a concentration of nitrogen or oxygen associated therewith. The stress layer can be heated to transform the stress layer into a tensile stress layer to reduce the concentration of the nitrogen or the oxygen in the stress layer. The tensile stress layer and the diffusion barrier layer can be removed.
    Type: Application
    Filed: August 3, 2011
    Publication date: February 9, 2012
    Inventors: Kwan-Yong LIM, Chung-Geun Koh, Hyun-Jung Lee, Tae-Ouk Kwon, Seok-Hoon Kim, Tae-Ho Cha
  • Publication number: 20120021809
    Abstract: A tilt slide module and a mobile communication terminal having the same includes a lower slide plate, an upper slide plate coupled to the lower slide plate to move in a sliding manner with respect to the lower slide plate wherein the upper slide plate is overlapped with the lower slide plate, a fixing piece wherein a hinge shaft is inserted in a hole provided thereon, and a tilt guide coupled to the fixing piece by the hinge shaft to be rotated about the hinge shaft.
    Type: Application
    Filed: February 15, 2011
    Publication date: January 26, 2012
    Applicant: Pantech Co., Ltd.
    Inventors: Sung Jun PARK, Choon Kwon Kang, Sang Gil Kwak, Byung Ho Song, Kang Gu Lee, Chun Won Lee, Tae Yong Lim
  • Publication number: 20120023161
    Abstract: Disclosed herein are a system and a method for providing multimedia services capable of providing various types of multimedia contents and information sensed at multi-points to users at a high rate and in real time at the time of providing the multimedia contents and sense scene representation and sensory effects for multimedia contents corresponding to multimedia services through the multi-points according to service requests of the multimedia services that users want to receive, encode and transmit the sensed information for scene representation and sensory effects with binary representation according to the sensing, transmit device command data for the sensed scene representation and sensory effects, drive and control user devices according the device command data to provide the scene representation and the sensory effects for the multimedia contents to the users.
    Type: Application
    Filed: July 21, 2011
    Publication date: January 26, 2012
    Applicants: SK Telecom Co., Ltd., Electronics and Telecommunications Research Institute
    Inventors: Seong-Yong LIM, In-Jae LEE, Ji-Hun CHA, Young-Kwon LIM, Min-Sik PARK, Han-Kyu LEE, Jin-Woong KIM, Joong-Yun LEE
  • Patent number: 8101480
    Abstract: A method of forming a transistor induces stress in the channel region using a stress memorization technique (SMT). Impurities are implanted into a substrate adjacent a gate electrode structure to produce an amorphous region adjacent the channel region. The amorphous region is then recrystallized by forming a metal-oxide layer over the amorphous region, and then thermally treating the same. The crystallization creates compressive stress in the amorphous region. As a result, stress is induced in the channel region of the substrate located under the gate electrode structure.
    Type: Grant
    Filed: November 12, 2010
    Date of Patent: January 24, 2012
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seok-Hoon Kim, Chung-Geun Koh, Kwan-Yong Lim, Hyun-Jung Lee, Tae-Ouk Kwon, Sang-Bom Kang
  • Publication number: 20120012928
    Abstract: A method for fabricating a transistor including a bulb-type recess channel includes forming a bulb-type recess pattern in a substrate, forming a gate insulating layer over the substrate and the bulb-type recess pattern, forming a first gate conductive layer over the gate insulating layer, forming a void movement blocking layer over the first gate conductive layer in the bulb-type recess pattern, and forming a second gate conductive layer over the void movement blocking layer and the first gate conductive layer.
    Type: Application
    Filed: September 23, 2011
    Publication date: January 19, 2012
    Inventors: Kwan-Yong Lim, Hong-Seon Yang, Dong-Sun Sheen, Se-Aug Jang, Heung-Jae Cho, Yong-Soo Kim, Min-Gyu Sung, Tae-Yoon Kim