Abstract: A gate structure of a semiconductor device includes an intermediate structure, wherein the intermediate structure includes a titanium layer and a tungsten silicide layer. A method for forming a gate structure of a semiconductor device includes forming a polysilicon-based electrode. An intermediate structure, which includes a titanium layer and a tungsten silicide layer, is formed over the polysilicon-based electrode. A metal electrode is formed over the intermediate structure.

Abstract: Disclosed are user equipment and a base station in a carrier aggregation system, and a call admission method thereof. The user equipment includes a plurality of physical layers, and the base station provides multiple component carriers. When messages for connection setup are transmitted and received between the user equipment and base station, the messages include information about what component carriers are selected by the physical layers, information about what component carriers are selectable by the physical layers, and information about calculations for uplink timing alignment, and call admission control and load balancing is performed based on the information included in the messages. Accordingly, in the carrier aggregation system, quicker call admission and load balancing are achieved.

Abstract: A method for fabricating a semiconductor device includes providing a substrate having a bulb-type recessed region, forming a gate insulating layer over the bulb-type recessed region and the substrate, and forming a gate conductive layer over the gate insulating layer. The gate conductive layer fills the bulb-type recessed region. The gate conductive layer includes two or more conductive layers and a discontinuous interface between the conductive layers.

Abstract: A method for fabricating a semiconductor device includes forming a pattern including a first layer including tungsten, performing a gas flowing process on the pattern in a gas ambience including nitrogen, and forming a second layer over the pattern using a source gas including nitrogen, wherein the purge is performed at a given temperature for a given period of time in a manner that a reaction between the first layer and the nitrogen used when forming the second layer is controlled.

Abstract: Methods of characterizing a mechanical stress level in a stressed layer of a transistor and a mechanical stress characterizing test structure are disclosed. In one embodiment, the test structure includes a first test transistor including a first stress level; and at least one second test transistor having a substantially different second stress level. A testing circuit can then be used to characterize the mechanical stress level by comparing performance of the first test transistor and the at least one second test transistor. The type of test structure depends on the integration scheme used. In one embodiment, at least one second test transistor is provided with a substantially neutral stress level and/or an opposite stress level from the first stress level. The substantially neutral stress level may be provided by either rotating the transistor, removing the stressed layer causing the stress level or de-stressing the stressed layer causing the stress layer.

Abstract: Disclosed is a method and device for requesting and reporting channel quality information in a mobile communication system. A base station a locates a dedicated feedback channel for channel quality information report to an uplink radio resource, transmits the allocation information to subscriber stations, and generates a CQI report message to request channel quality information from the subscriber stations. The subscriber stations receive the CQI report message from the base station, measures a radio channel quality for communication with the base station, generates channel quality information, generates a CQI response message including the channel quality information, and transmit—the CQI response message to the base station through a dedicates feedback channel designated in the allocation information.

Abstract: The present invention relates to a semiconductor device and a method of manufacture thereof, being capable of improving the high integration by increasing a cell region while securing the reliability of device and the process margin through forming a cell region and a core region with the stacking structure.

Abstract: In a double data rate (DDR) counter and counting method used in, for example, an analog-to-digital conversion in, for example, a CMOS image sensor and method, a first stage of the counter generates a least significant bit (LSB) of the value in the counter. The counter includes at least one second stage for generating another bit of the value in the counter. An input clock signal is applied to a data input of the first stage and a clock input of the second stage.

Abstract: In a high speed vertical channel transistor, a pillar structure is formed over a substrate, a gate electrode surrounds an outer wall of a lower portion of the pillar structure; and a word line extends in a direction to partially contact an outer wall of the gate electrode. The word line shifts toward a side of the pillar structure resulting in increased transistor speed.

Abstract: A gate structure of a semiconductor device includes an intermediate structure, wherein the intermediate structure includes a titanium layer and a tungsten silicide layer. A method for forming a gate structure of a semiconductor device includes forming a polysilicon-based electrode. An intermediate structure, which includes a titanium layer and a tungsten silicide layer, is formed over the polysilicon-based electrode. A metal electrode is formed over the intermediate structure.

Abstract: In a double data rate (DDR) counter and counting method used in, for example, an analog-to-digital conversion in, for example, a CMOS image sensor and method, a first stage of the counter generates a least significant bit (LSB) of the value in the counter. The first stage includes a first clock input and is edge-triggered on one of the rising and falling edges of a signal applied at the first clock input. The counter includes at least one second stage for generating another bit of the value in the counter. The second stage includes a second clock input and is edge-triggered on the other of the rising and falling edges of a signal applied at the second clock input.

Abstract: A ramp generator includes a row decoder, a column decoder, a current cell matrix and a current-voltage converter. The row decoder generates row selection signals, and the column decoder generates column selection signals. Each of current cells included in the current cell matrix is turned on to provide a unit current if a corresponding row selection signal and a corresponding column selection signal are activated. Each of the current cells is maintained to be turned on even if the corresponding row selection signal or the corresponding column selection signal is deactivated. The current cell matrix outputs an output current by summing unit currents provided from the current cells that are turned on. The current-voltage converter converts the output current of the current cell matrix into a ramp voltage. Therefore, the ramp generator may have a small size and prevent a glitch.

Abstract: Disclosed is a power saving mode control system (200) and method in a wireless portable Internet system. Stations in the sleep mode are grouped by aligning listening intervals of the stations which enter the sleep mode in the power saving management system wherein the sleep interval for receiving no traffic data is exponentially increased. Therefore, the sleep mode of the grouped subscriber stations are easily managed, and power saving efficiency is enhanced and system complexity is lowered by easily and quickly detecting data states provided to the corresponding stations.

Abstract: A dielectric structure in a nonvolatile memory device and a method for fabricating the same are provided. The dielectric structure includes: a first oxide layer; a first high-k dielectric film formed on the first oxide layer, wherein the first high-k dielectric film includes one selected from materials with a dielectric constant of approximately 9 or higher and a compound of at least two of the materials; and a second oxide layer formed on the first high-k dielectric film.

Abstract: Provided is a method for generating a feedback message for ARQ including recording an ACK type in a first field; estimating the last block sequence number of successively ACKed blocks and recording the estimated last block sequence number in a second field; recording the number of groups of successively ACKed blocks after the estimated last block sequence number as the number of ACK MAPs in a third field; recording the startblock sequence number of the respective ACK MAPs in a fourth field; recording the lengths of the respective ACK MAPs in a fifth field corresponding to the recorded start block sequence number; and sending a feedback message including information on the first to the fifth fields.

Abstract: Provided is an apparatus and method for providing a Multimedia Broadcast and Multicast Service (MBMS) in a wireless communication system, e.g., a 3rd-Generation Partnership Project (3GPP) Long-Term Evolution (LTE)-Advanced mobile communication system. The method for providing an MBMS in a mobile communication system includes: multiplexing MBMS traffic channels providing MBMS traffic data and an MBMS control channel proving control information of MBMS into a downlink-shared channel; processing and transmitting data of the downlink-shared channel to be transmitted through a physical downlink-shared channel of a physical channel; and generating and transmitting a physical downlink control channel which includes identifiers for indicating MBMS data and information to designate a receiving terminal of data transmitted through the physical downlink-shared channel.

Abstract: A dielectric structure in a nonvolatile memory device and a method for fabricating the same are provided. The dielectric structure includes: a first oxide layer; a first high-k dielectric film formed on the first oxide layer, wherein the first high-k dielectric film includes one selected from materials with a dielectric constant of approximately 9 or higher and a compound of at least two of the materials; and a second oxide layer formed on the first high-k dielectric film.

Abstract: Provided is a buffer status reporting method of a terminal device in a mobile communication system. The buffer status reporting method includes obtaining a radio resource allocation for a plurality of component carriers from a base station, configuring a plurality of medium access control-protocol data units (MAC-PDUs) including buffer status information corresponding to the plurality of component carriers, the plurality of MAC-PDUs including generated sequence numbers (SNs), and transmitting the plurality of MAC-PDUs to the base station through the plurality of component carriers.

Abstract: A sensor for angle measurement of a joint is disclosed. The sensor comprises a code strip, a linear encoder configured to detect relative movement between the linear encoder and the code strip, and a microcontroller configured to compute angular rotation of the joint from linear displacement obtained by the relative movement. The relative movement corresponds to rotation of the joint. A corresponding method and system are also disclosed.

Abstract: A fin transistor includes fin active region, an isolation layer covering both sidewalls of a lower portion of the fin active region, a gate insulation layer disposed over a surface of the fin active region, and a gate electrode disposed over the gate insulation layer and the isolation layer, and having a work function ranging from approximately 4.4 eV to approximately 4.8 eV.