Abstract: A semiconductor device having a substrate; a plurality of pillar structures, wherein each pillar structure includes an active pillar disposed over the substrate; a gate electrode surrounding an outer wall of the active pillar; an interlayer dielectric (ILD) layer insulating adjacent pillar structures; a gate contact penetrating the ILD layer and configured to connect to a sidewall of the gate electrode; and a word line connected to the gate contact.

Abstract: The present invention relates to a broadcast signal processing system and a method for searching a storage device thereof. One of the embodiments of the present invention includes a receiving unit configured to receive a broadcast signal, a decoding unit configured to decode the broadcast signal received by the receiver, a display unit configured to display broadcast content according to the broadcast signal decoded by the decoder, an interface unit configured to communicate with the storage device through a wired network or a wireless network, and a control unit configured to control access to the storage device through the interface unit using one of connection information as to the storage device connected by the interface unit and search information as to the storage device searched through the network by the interface unit, and to control storage of the broadcast signal decoded by the decoder in the storage device or playback of content stored in the storage device by the display unit.

Abstract: A terminal state controlling method and apparatus are provided. The terminal state includes a connected state and an idle state, and the connected state includes an active state and a dormant state. The active state includes a scheduling-ON state and a scheduling-OFF state. In the state controlling apparatus, a radio resource control (RRC) layer controls a transition between the active state and the dormant state, and a media access control (MAC) layer controls a transition between the scheduling-ON state and the scheduling-OFF state.

Abstract: Disclosed is a method for manufacturing a semiconductor device. This method includes the step of forming a diffusion barrier film, which is interposed between a silicon film and a metal film and functions to prevent diffusion between the silicon and metal films. The diffusion barrier film is formed of a WSixNy film or a WSix film by using an ALD process.

Abstract: A counter array and an image sensor including the same may be provided. The counter array may include a controller and a plurality of counter units. The controller may output an operation control signal and a direction indication signal. The counter units hold previous output values or may perform a counting operation in response to the operation control signal and may perform an up-count operation or a down-count operation in response to the direction indication signal when performing the counting operation.

Abstract: Disclosed are a semiconductor device with dual gate dielectric layers and a method for fabricating the same. The semiconductor device includes: a silicon substrate divided into a cell region where NMOS transistors are formed and a peripheral region where NMOS and PMOS transistors are formed; a targeted silicon oxide layer formed on the silicon substrate in the cell region; an oxynitride layer formed on the silicon substrate in the peripheral region; a first gate structure formed in the cell region; a second gate structure formed on the oxynitride layer in an NMOS region of the peripheral region; and a third gate structure formed on the oxynitride layer in a PMOS region of the peripheral region.

Abstract: A ramp signal generator is provided. The ramp signal generator may include a ramp signal generation unit configured to generate a ramp signal based on an externally-supplied driving voltage and a ramp signal correction unit configured to feed back and compare the ramp signal with a reference signal and correct a driving voltage by generating a corrected voltage from a comparison value. The ramp signal generation unit may generate a corrected ramp signal where the slope changes based on a corrected driving voltage.

Abstract: Disclosed is a method and device for requesting and reporting channel quality information in a mobile communication system. A base station a locates a dedicated feedback channel for channel quality information report to an uplink radio resource, transmits the allocation information to subscriber stations, and generates a CQI report message to request channel quality information from the subscriber stations. The subscriber stations receive the CQI report message from the base station, measures a radio channel quality for communication with the base station, generates channel quality information, generates a CQI response message including the channel quality information, and transmit-the CQI response message to the base station through a dedicates feedback channel designated in the allocation information.

Abstract: A memory device includes a substrate, a plurality of wordlines arranged over the substrate, a plurality of pillars formed over the substrate between the wordlines, a gate electrode surrounding external walls of the pillars to be connected to the wordlines, and an insulation layer for insulating one sidewall of each wordline from the gate electrode.

Abstract: An analog signal is converted to a digital value having a given number of bits that define given quantization levels, by repeatedly sampling the analog signal at a resolution that is less than that which is defined by the given number of bits. Lower resolution sampling results are thereby obtained. The lower resolution sampling results are summed to obtain the digital value having the given number of bits.

Abstract: A single slope ADC using a hysteresis property includes a first comparator, a second comparator, and a code generating unit. The first comparator outputs a compared signal by receiving and comparing an input signal having a constant level with a ramp signal, the second comparator has a hysteresis property having an input terminal connected to an output terminal of the first comparator, and the code generating unit is connected to the second comparator and outputs a digital code corresponding to a time-point of a state transition of an output signal of the second comparator. The second comparator can be embodied as a Schmidt trigger or a Schmidt-trigger inverter. The single slope ADC further includes a controller that controls at least one of a rising threshold or a failing threshold of the Schmidt trigger or of the Schmidt-trigger inverter.

Abstract: Information for different subscribers of a service with the same modulation and channel encoding method is transmitted by allocating radio resources in a wireless portable Internet system. Also, identifier information on the subscriber of a concurrently allocated radio resource is transmitted through common control information. Therefore, information for a plurality of subscribers coexists in a single radio resource block, and it can be easily transmitted. Since a subscriber station which has received downlink information can know to which radio resource block the information for the corresponding station is allocated through the subscriber identifier information transmitted as common control information, the subscriber station can access desired information by accessing a specific radio resource block to which information for the subscriber is allocated in the received frame.

Abstract: The present invention relates to a semiconductor device and a method of manufacture thereof, being capable of improving the high integration by increasing a cell region while securing the reliability of device and the process margin through forming a cell region and a core region with the stacking structure.

Abstract: A tungsten polymetal gate is made by forming a gate insulation layer and a polysilicon layer on a semiconductor substrate; depositing a barrier layer on the polysilicon layer; depositing a tungsten nucleation layer on the barrier layer through an ALD process; depositing a tungsten layer on the tungsten nucleation layer through a CVD process; depositing a hard mask layer on the tungsten layer; and etching the hard mask layer, the tungsten layer, the tungsten nucleation layer, the barrier layer, the polysilicon layer, and the gate insulation layer.

Abstract: In a high speed vertical channel transistor, a pillar structure is formed over a substrate, a gate electrode surrounds an outer wall of a lower portion of the pillar structure; and a word line extends in a direction to partially contact an outer wall of the gate electrode. The word line shifts toward a side of the pillar structure resulting in increased transistor speed.

Abstract: A method for fabricating a semiconductor device includes forming a stacked layer including a tungsten layer, forming a hard mask pattern over the stacked layer, and oxidizing a surface of the hard mask pattern to form a stress buffer layer. A portion of the stacked layer uncovered by the hard mask pattern is removed using the hard mask pattern and the stress buffer layer as an etch mask, thereby forming a first resultant structure. A capping layer is formed over the first resultant structure, the capping layer is etched to retain the capping layer on sidewalls of the first resultant structure, and the remaining portion of the stacked layer uncovered by the hard mask pattern is removed.

Abstract: A method for forming a dual gate oxide layer, including the steps of: a) forming a gate oxide layer on a semiconductor substrate; and b) increasing a thickness of a part of the gate oxide layer by performing a decoupled plasma treatment. Additional heat processes are not necessary because the dual gate oxide layer is formed with the decoupled plasma. Also, the channel characteristic of the semiconductor device can be ensured because the silicon substrate is not damaged. Furthermore, because the threshold voltage in the cell region is increased without additional channel ion implantation, the electrical characteristic of the semiconductor device can be enhanced.

Abstract: A microwave filter for use with a microwave brazing system having a brazing chamber, a vacuum line, and a pressure gauge located proximate the vacuum line. The microwave filter comprises a baffle plate configured to be mounted in an opening between the brazing chamber and the pressure gauge, and a plurality of hollow pipes configured to substantially prevent the transmission of microwaves from the brazing chamber to the pressure gauge, and further configured to allow gas to flow between the brazing chamber and the vacuum line.

Abstract: A method for fabricating a semiconductor device includes forming a pattern including a first layer including tungsten, performing a gas flowing process on the pattern in a gas ambience including nitrogen, and forming a second layer over the pattern using a source gas including nitrogen, wherein the purge is performed at a given temperature for a given period of time in a manner that a reaction between the first layer and the nitrogen used when forming the second layer is controlled.

Abstract: An analog signal is converted to a digital value having a given number of bits that define given quantization levels, by repeatedly sampling the analog signal at a resolution that is less than that which is defined by the given number of bits. Lower resolution sampling results are thereby obtained. The lower resolution sampling results are summed to obtain the digital value having the given number of bits.