Abstract: The disclosure provides an optical waveguide assembly. The optical waveguide assembly includes: optical waveguide plates, where there are a plurality of optical waveguide plates, the plurality of optical waveguide plates are provided in an overlaid manner, each optical waveguide plate is provided with an in-coupling structure, a turning structure, an out-coupling structure and a diffraction inhibition layer, the turning structure and the out-coupling structure on the same optical waveguide plate are located on two side surfaces of the optical waveguide plate respectively, projections of the turning structure and the out-coupling structure on the optical waveguide plate are at least partially overlapped, and the diffraction inhibition layer is located between the out-coupling structure and the optical waveguide plate. Each turning structure includes a plurality of cellular elements. The disclosure solves a problem of non-uniform display efficiency of an optical waveguide assembly in the related art.

Abstract: The present disclosure relates to an integrated chip including a dielectric structure over a substrate. A first capacitor is disposed between sidewalls of the dielectric structure. The first capacitor includes a first electrode between the sidewalls of the dielectric structure and a second electrode between the sidewalls and over the first electrode. A second capacitor is disposed between the sidewalls. The second capacitor includes the second electrode and a third electrode between the sidewalls and over the second electrode. A third capacitor is disposed between the sidewalls. The third capacitor includes the third electrode and a fourth electrode between the sidewalls and over the third electrode. The first capacitor, the second capacitor, and the third capacitor are coupled in parallel by a first contact on a first side of the first capacitor and a second contact on a second side of the first capacitor.

Abstract: An electronic device includes a light emitting diode and a light converting layer disposed on the light emitting diode. The electronic device emits a green output light under an operation of a highest brightness. The green output light has an output spectrum. An intensity integral of the output spectrum from 380 nm to 489 nm is defined as a first intensity integral. An intensity integral of the output spectrum from 490 nm to 780 nm is defined as a second intensity integral. A ratio of the first intensity integral over the second intensity integral is defined as a first ratio, and the first ratio is greater than 0% and less than or equal to 7.5%.

Abstract: Methods and apparatus for reducing a size of a neural network model, the method including: compressing data of the neural network model; identifying structure information of a vector register, wherein the structure information includes a number of registers included in the vector register; comparing a number of elements in the compressed data with a first condition, wherein the first condition is determined based on the number of registers in the vector register; and in response to the number of elements satisfying the first condition, associating the compressed data with the vector register to enable loading the compressed data to the vector register.

Abstract: The present disclosure relates to computer-implemented systems and methods for facilitating simultaneous poll responses. A method may include assigning respective subsets of subcarrier frequencies to a plurality of user devices for communication over a wireless channel. The method may also include transmitting, simultaneously, a channel status request poll to the user devices. Additionally, the method may include determining, based at least in part on a first channel status response received via a first subset of subcarrier frequencies over the wireless channel, that the first channel status response is received from the first user device. Similarly, the method may also include determining a second channel status response is received from a second user device. Furthermore, the method may include determining, based at least in part on the first channel status response and the second channel status response, to schedule simultaneous data communication for the first device and the second device.

Abstract: A touch display device is provided in this disclosure. The touch display device includes a substrate, a first conductive layer, a second conductive layer, a stacked structure, an inorganic light emitting unit, and a touch sensing circuit. The first conductive layer is disposed on the substrate. The first conductive layer includes a gate electrode. The second conductive layer is disposed on the first conductive layer. The second conductive layer includes a source electrode and a drain electrode. The stacked structure is disposed on the substrate. The stacked structure includes a conductive channel and a sensing electrode. The inorganic light emitting unit is disposed on the stacked structure. The inorganic light emitting unit is electrically connected with the drain electrode via the conductive channel. The touch sensing circuit is electrically connected with the sensing electrode.

Abstract: An electronic device includes a substrate, a plurality of connecting pads, a plurality of conductive portions overlapped with the plurality of connecting pads, a plurality of conductive lines, an insulating layer, and an integrated chip. At least one of the conductive lines is overlapped with at least one of the conductive portions, and at least one of the connecting pads is electrically connected to the at least one of the conductive lines through the at least one of the conductive portions. The insulating layer is disposed between the at least one of the connecting pads and the at least one of the conductive portions, wherein the insulating layer directly contacts a top surface and a lateral surface of the at least one of the conductive portions. The integrated chip is electrically connected to the at least one of the conductive lines.

Abstract: A display device is provided, which includes a first substrate, a first display structure, a second display structure, a first optical film, a second optical film, a first adhesive layer, a second adhesive layer and a protecting layer. The first and second optical films are separated. The first adhesive layer is disposed between the first display structure and first optical film. The second adhesive layer is disposed between the second display structure and second optical film. The protecting layer is disposed on the first display structure and the second display structure. The first and second display structures are different from each other and are selected from a liquid-crystal display, an organic light-emitting diode display, an inorganic light-emitting diode display or a laser display.

Abstract: A semiconductor device is provided. The semiconductor device has a stack of parallel metal gates formed on a first side of a substrate, a first pair of insulation regions extending across the stack of parallel metal gates, a second pair of insulation regions replacing two of the parallel metal gates, a first isolated region enclosed by the first and second pairs of insulation layers, a first via formed within the isolated region, and an insulation layer replacing the metal gates located within the isolated region. Tree or more metal gates are located within the isolated region, and the first via extends through a portion of a center one of the three metal gates within the isolated region.

Abstract: First data is stored. A request for the first data is received from a communication device over a link established with a communication device. An access control engine comprising circuitry is to control access to the first data to the communication device based on an authentication state of the communication device and a protection state of the link.

Abstract: A light sensor having a voltage reversing mechanism is provided. A photoelectric component converts a first light signal into a first photocurrent. A capacitor is charged to a first voltage by the first photocurrent. A counter counts a first coarse count value according to the first voltage. The photoelectric component converts a second light signal into a second photocurrent. The capacitor is charged from a reversed first voltage to a second voltage by the second photocurrent. The counter counts a second coarse count value according to the second voltage. The counter counts a fine count value according to the second coarse count value. One of the first light signal and the second light signal is emitted by both of an ambient light source and a light-emitting component and then reflected by a tested object, and the other one of them is emitted by only the ambient light source.

Abstract: A semiconductor assembly and a method for manufacturing the same are provided. The semiconductor assembly includes a first substrate, a first well in the first substrate and having a first doping type, a second substrate, a second well in the second substrate and having a second doping type, a first dielectric layer between the first substrate and the second substrate, and a second dielectric layer between the first substrate and the second substrate. The first doping type is different from the second doping type. The second dielectric layer is bonded to the first dielectric layer. The first well overlaps with the second well in a vertical direction.

Abstract: A polymer plastic front plate comprises: a plastic substrate and a hard coating layer formed on an adhesion surface of the plastic substrate. The hard coating layer comprises: organic-inorganic hybrid UV oligomer, high Tg UV resin additive, a plurality of dispersed flaky nano inorganic material, and photo initiator, so as to form a gas barrier hard coating layer with high surface dyne value (>44 dyne) on the adhesion surface of the plastic substrate. It not only has good ink printability and OCA adhesiveness, but also inhibits the diffusion of fugitive gas from polymer plastic front plates during high-temperature, high-temperature and high-humidity, high-low temperature thermal shocks and other harsh automotive industry environmental tests. The gas can be avoided from entering the OCA layer, thereby solving the problems of bubbles and delamination after the environmental tests are performed.

Abstract: A contact lens includes at least one color changeable region, wherein the color changeable region includes at least one photoluminescence material. When a wavelength of the photoluminescence material having a maximum radiation intensity is WEmMx, an average transmittance in a wavelength range of 400 nm-700 nm of the color changeable region is T4070, a size of a total area of the color changeable region is AC, and a size of a total area of the contact lens is AL, certain conditions relating to WEmMx, T4070 and AC/AL are satisfied.

Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a transistor, a conductive feature on the transistor, a dielectric layer over the conductive feature, and an electrical connection structure in the dielectric layer and on the conductive feature. The electrical connection structure includes a first grain of a first metal material and a first inhibition layer extending along a grain boundary of the first grain of the first metal material, the first inhibition layer is made of a second metal material, and the first metal material and the second metal material have different oxidation/reduction potentials.

Abstract: A semiconductor device includes nanostructures vertically arranged and spaced apart from one another along a first direction. The semiconductor device also includes a dielectric fin structure of a dielectric material of uniform composition and an isolation structure on opposite sides of the nanostructures. Moreover, the semiconductor device also includes a gate structure wrapping around the nanostructures. The gate structure extends between the nanostructure and the dielectric fin structure, and extends between the nanostructures and the isolation structure. Furthermore, the nanostructures are spaced apart from the dielectric fin structure along a second direction perpendicular to the first direction by a first distance, and from the isolation structure along the second direction by a second distance, where the first distance is greater than the second distance. Additionally, the gate structure interfaces with the dielectric fin structure on a surface extending perpendicular to the first direction.

Abstract: The present disclosure relates to systems and methods for video surveillance. The systems may obtain an initial time period corresponding to at least part of a time period during which at least one target image frame is captured by the monitoring equipment based on at least one parameter of a monitoring equipment. The systems may obtain a warning scheme associated with the initial time period. The warning scheme may include controlling an operation of a light associated with the monitoring equipment within at least one candidate time period in the initial time period and processing the at least one target image frame.

Abstract: In one embodiment, an apparatus comprises a processor to: receive a request to configure a secure execution environment for a first workload; configure a first set of secure execution enclaves for execution of the first workload, wherein the first set of secure execution enclaves is configured on a first set of processing resources, wherein the first set of processing resources comprises one or more central processing units and one or more accelerators; configure a first set of secure datapaths for communication among the first set of secure execution enclaves during execution of the first workload, wherein the first set of secure datapaths is configured over a first set of interconnect resources; configure the secure execution environment for the first workload, wherein the secure execution environment comprises the first set of secure execution enclaves and the first set of secure datapaths.