Abstract: A battery system is electrically connected to a power bus that is arranged to supply electric power to an on-vehicle actuator such as an electric traction machine. Controlling electric power flow in the battery pack includes determining states of charge for the plurality of battery packs, identifying one of the battery packs as a weakest battery pack based upon the states of charge, and determining an internal circulating current being transferred via the wiring harness that is associated with charging of the weakest battery pack. Electric power transfer through the wiring harness and the power bus is controlled such that the internal circulating current is less than an internal circulating current limit. In one embodiment, the internal circulating current limit is determined in relation to battery temperature.

Abstract: A system for use with a direct current fast-charging (DCFC) station includes a controller and battery system. The battery system includes first and second battery packs, and first, second, and third switches. The switches have ON/OFF conductive states commanded by the controller to connect the battery packs in a parallel-connected (P-connected) or series-connected (S-connected) configuration. An electric powertrain with one or more electric machines is powered via the battery system. First and second charge ports of the system are connectable to the station via a corresponding charging cable. The first charge port receives a low or high charging voltage from the station. The second charge port receives a low charging voltage. When the station can supply the high charging voltage to the first charge port, the controller establishes the S-connected configuration via the switches, and thereafter charges the battery system solely via the first charge port.

Abstract: Disclosed here is a supported catalyst comprising a thermally stable core, wherein the thermally stable core comprises a metal oxide support and nickel disposed in the metal oxide support, wherein the metal oxide support comprises at least one base metal oxide and at least one transition metal oxide or rare earth metal oxide mixed with or dispersed in the base metal oxide. Optionally the supported catalyst can further comprise an electrolyte removing layer coating the thermally stable core and/or an electrolyte repelling layer coating the electrolyte removing layer, wherein the electrolyte removing layer comprises at least one metal oxide, and wherein the electrolyte repelling layer comprises at least one of graphite, metal carbide and metal nitride. Also disclosed is a molten carbonate fuel cell comprising the supported catalyst as a direct internal reforming catalyst.

Abstract: An active device substrate including a flexible substrate, an inorganic insulation layer, an organic insulation pattern, a conductive device and a peripheral wiring is provided. The flexible substrate has an active region, a peripheral region outside the active region and a bending region connected between the active region and the peripheral region. The inorganic insulation layer is disposed on the flexible substrate and has a groove disposed in the bending region. The organic insulation pattern is disposed in the groove of the inorganic insulation layer. The peripheral wiring is extended from the active region to the conductive device in the peripheral region. The peripheral wiring is disposed on the organic insulation pattern, and the organic insulation pattern is located between the peripheral wiring and the flexible substrate.

Abstract: A patient support apparatus includes a bed including a frame. A mattress is supported by the frame. A respiratory therapy apparatus is supported by the frame. A pneumatic system is operable to inflate at least one bladder of the mattress and operable to deliver air to the respiratory therapy apparatus.

Abstract: A method includes providing a device structure having an isolation structure, a fin adjacent the isolation structure and taller than the isolation structure, and gate structures over the fin and the isolation structure. The isolation structure, the fin, and the gate structures define a first trench over the fin and a second trench over the isolation structure. The method further includes forming a first contact etch stop layer (CESL) over the gate structures, the fin, and the isolation structure; depositing a first inter-layer dielectric (ILD) layer over the first CESL and filling in the first and second trenches; and recessing the first ILD layer such that the first ILD layer in the first trench is removed and the first ILD layer in the second trench is recessed to a level that is about even with a top surface of the fin.

Abstract: Provided is a sensor and method for weld defect detection. The sensor includes several piezoelectric elements which form a matrix arranged on a flexible substrate. Each piezoelectric element is covered with a damping block and surrounded by sound absorbing material, and packaged within a flexible protective film. The sensor is simple, highly adaptable and high detection efficiency, which is especially suitable for the quick in-service inspection of long distance welds in large equipment, it has high degree of automation.

Abstract: A FinFET device structure is provided. The FinFET device structure includes a gate structure formed over a fin structure, and a gate spacer layer formed on a sidewall of the gate structure. The FinFET device structure includes a gate contact structure formed over the gate structure, and a first isolation layer surrounding the gate contact structure.

Abstract: This invention provides methods, processes, compounds and compositions for modulating the gene expression or secretion of adhesion proteins, angiopoietins or their receptors to cure diseases, for anti-angiogenesis and for treating parasites, wherein the adhesion proteins or receptors comprise fibronectin, integrins family, myosin, vitronectin, collagen, laminin, glycosylation cell surface proteins, polyglycans, cadherin, heparin, tenascin, CD 54, CAM, elastin and FAK; wherein the angiopoietins comprise angiopoietin 1, angiopoietin 2, angiopoietin 3, angiopoietin 4, angiopoietin 5, angiopoietin 6, angiopoietin 7, angiopoietin-like 1, angiopoietin-like 2, angiopoietin-like 3, angiopoietin-like 4, angiopoietin-like 5, angiopoietin-like 6, and angiopoietin-like 7; wherein the cancers comprise breast cancer, leukocyte cancer, liver cancer, ovarian cancer, bladder cancer, prostate cancer, skin cancer, bone cancer, brain cancer, leukemia cancer, lung cancer, colon cancer, CNS cancer, melanoma cancer, renal cancer, c

Abstract: Examples of an integrated circuit with an interconnect structure and a method for forming the integrated circuit are provided herein. In some examples, the method includes receiving a workpiece that includes an inter-level dielectric layer. A first contact that includes a fill material is formed that extends through the inter-level dielectric layer. The inter-level dielectric layer is recessed such that the fill material extends above a top surface of the inter-level dielectric layer. An etch-stop layer is formed on the inter-level dielectric layer such that the fill material of the first contact extends into the etch-stop layer. A second contact is formed extending through the etch-stop layer to couple to the first contact. In some such examples, the second contact physically contacts a top surface and a side surface of the first contact.

Abstract: In an embodiment, a method includes: forming a differential contact etch stop layer (CESL) having a first portion over a source/drain region and a second portion along a gate stack, the source/drain region being in a substrate, the gate stack being over the substrate proximate the source/drain region, a first thickness of the first portion being greater than a second thickness of the second portion; depositing a first interlayer dielectric (ILD) over the differential CESL; forming a source/drain contact opening in the first ILD; forming a contact spacer along sidewalls of the source/drain contact opening; after forming the contact spacer, extending the source/drain contact opening through the differential CESL; and forming a first source/drain contact in the extended source/drain contact opening, the first source/drain contact physically and electrically coupling the source/drain region, the contact spacer physically separating the first source/drain contact from the first ILD.

Abstract: Semiconductor devices and methods of forming the same are provided. In one embodiments, the method includes providing a structure that includes a substrate, a first gate structure and a second gate structure over the substrate, a first source/drain (S/D) feature comprising silicon adjacent to the first gate structure, a second S/D feature comprising silicon germanium (SiGe) adjacent to the second gate structure; and one or more dielectric layers over sidewalls of the first and second gate structures and over the first and second S/D features. The method further includes etching the one or more dielectric layers to form openings exposing the first and second S/D features, forming a masking layer over the first S/D feature, implanting gallium (Ga) into the second S/D feature while the masking layer is over the first S/D feature, removing the masking layer; and etching the first and second S/D features with an oxygen-atom-containing etchant.

Abstract: A method for forming a multi-material part by selective laser melting includes the following steps. Modeling is performed by regularly distributing and arraying a combination of materials that meets forming requirements such that a part model is designed. The designed part model is subjected to a dimension compensation, a shape compensation, a chamfering setting, a margin design and a design of a process support to obtain a process model. The obtained process model is sliced into a series of layers. Type, distribution and boundary information of materials in each layer are collected to generate a control file. All materials required for part forming are loaded into an additive manufacturing equipment. After a state of the additive manufacturing equipment meets forming requirements, a part is formed under the control of the generated control file. Post-processing is performed after the part is formed.

Abstract: An AR-based supplementary teaching system for guzheng and method thereof, the system includes an AR device, a data processing device and positioning devices for key positions, the data processing device is signal-connected to the AR device, and the positioning devices is installed on the guzheng code of guzheng, the positioning devices corresponds to the guzheng code of guzheng one by one; the AR device is used to obtain real scene data; the data processing device is used to guzheng and the positioning devices identify and generate string distribution data; also used to obtain operation instruction based on user actions, execute the operation instruction and generate virtual data; the AR device is also used to convert all data based on the string distribution data The virtual data and the real scene data are superimposed and displayed.

Abstract: A semiconductor device includes a substrate, first and second fins protruding from the substrate, and first and second source/drain (S/D) features over the first and second fins respectively. The semiconductor device further includes an isolation feature over the substrate and disposed between the first and second S/D features, and a dielectric layer disposed on sidewalls of the first and second S/D features and on sidewalls of the isolation feature. A top portion of the isolation feature extends above the dielectric layer.

Abstract: In an embodiment, a method includes: forming a first fin extending from a substrate; forming a second fin extending from the substrate, the second fin being spaced apart from the first fin by a first distance; forming a metal gate stack over the first fin and the second fin; depositing a first inter-layer dielectric over the metal gate stack; and forming a gate contact extending through the first inter-layer dielectric to physically contact the metal gate stack, the gate contact being laterally disposed between the first fin and the second fin, the gate contact being spaced apart from the first fin by a second distance, where the second distance is less than a second predetermined threshold when the first distance is greater than or equal to a first predetermined threshold.

Abstract: A semiconductor structure includes a metal gate structure comprising a gate dielectric layer and a gate electrode, a conductive layer disposed over the metal gate structure, and a contact feature in direct contact with the top portion of the conductive layer, where the conductive layer includes a bottom portion disposed below a top surface of the metal gate structure and a top portion disposed over the top surface of the metal gate structure, and where the top portion laterally extends beyond a sidewall of the bottom portion.

Abstract: A method includes forming a first trench in an isolation region; forming a second trench in a device region, wherein the device region is disposed adjacent to the isolation region and each of the first and second trenches is disposed between two metal gate structures; forming a first dielectric layer in the first and the second trenches; forming a second dielectric layer over and different from the first dielectric layer; removing a portion of the second dielectric layer from the first and the second trenches, leaving behind a remaining portion of the second dielectric layer in the first trench; removing a portion of the first dielectric layer formed over a bottom surface of the second trench; subsequent to removing the portion of the first dielectric layer, removing the remaining portion of second dielectric layer from the first trench; and forming contact features in the first and the second trenches.

Abstract: A method of using a control system to estimate range of an electrified vehicle operated by a driver includes monitoring a first set of driver behaviors while the vehicle is in operation and comparing the monitored first set of driver behaviors to a plurality of known profiles having respective stored behaviors. The method may include matching the first set of driver behaviors to at least one of the known profiles to create an adapted driver model, modeling an adapted drive cycle profile based on the matched adapted driver model, and calculating a predicted driving range based on the adapted drive cycle profile. The method may classify the monitored first set of driver behaviors as at least one of conservative, neutral, and aggressive, relative to the plurality of known profiles, and model the adapted drive cycle profile is further based on the conservative, neutral, or aggressive classification.

Abstract: Provided herein are antibodies that bind to the alpha subunit of an IL-7 receptor (IL-7R?). Also provided are uses of these antibodies in therapeutic applications, such as treatment of inflammatory diseases. Further provided are cells that produce the antibodies, polynucleotides encoding the heavy and/or light chain regions of the antibodies, and vectors comprising the polynucleotides.