METHOD FOR FORMING A VIA IN A SUBSTRATE AND SUBSTRATE WITH A VIA
The present invention relates to a method for forming a via in a substrate and a substrate with a via. The method for forming a via in a substrate includes the following steps: (a) providing a substrate having a first surface and a second surface; (b) forming a groove that has a side wall and a bottom wall on the first surface of the substrate; (c) forming a first conductive metal on the side wall and the bottom wall of the groove so as to form a central groove; (d) forming a center insulating material in the central groove; (e) forming an annular groove that surrounds the first conductive metal on the first surface of the substrate; (f) forming a first insulating material in the annular groove; and (g) removing part of the second surface of the substrate to expose the first conductive metal, the center insulating material and the first insulating material. As a result, thicker insulating material can be formed in the via, and the thickness of the insulating material in the via is even.
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1. Field of the Invention
The present invention relates to a method for forming a via in a substrate and a substrate with a via, and more particularly to a method for forming an insulating layer on a side wall of a via in a substrate by utilizing a polymer and a substrate with the via.
2. Description of the Related Art
Afterward, a plurality of grooves 13 are formed on the first surface 11 of the substrate 1. An insulating layer 14 is then formed on the side wall of the grooves 13 by chemical vapor deposition, and a plurality of accommodating spaces 15 are formed. The material of the insulating layer 14 is usually silicon dioxide.
Afterward, referring to
In the conventional method, the insulating layer 14 is formed by chemical vapor deposition, so that the thickness of the insulating layer 14 on the side wall of the grooves 13 is limited, and is usually under 0.5 μm.
Moreover, the thickness of the insulating layer 14 on the side wall of the grooves 13 is not even, that is, the thickness of the insulating layer 14 on the upper side wall of the grooves 13 is not exactly equal to that on the lower side wall of the grooves 13. Thus, the electrical capacity is not uniform.
Therefore, it is necessary to provide a method for forming a via in a substrate to solve the above problems.
SUMMARY OF THE INVENTIONThe present invention is directed to a method for forming a via in a substrate. The method comprises the following steps: (a) providing a substrate having a first surface and a second surface; (b) forming a groove that has a side wall and a bottom wall on the first surface of the substrate; (c) forming a first conductive metal on the side wall and the bottom wall of the groove so as to form a central groove; (d) forming a center insulating material in the central groove; (e) forming an annular groove that surrounds the first conductive metal on the first surface of the substrate; (f) forming a first insulating material in the annular groove; and (g) removing part of the second surface of the substrate to expose the first conductive metal, the center insulating material and the first insulating material.
The present invention is further directed to a method for forming a via in a substrate. The method comprises the following steps: (a) providing a substrate having a first surface and a second surface; (b) forming an annular groove and a pillar on the first surface of the substrate so that the annular groove surrounds the pillar; (c) forming a first insulating material in the annular groove; (d) removing the pillar of the substrate so as to form a groove that has a side wall and a bottom wall on the substrate; (e) forming a first conductive metal on the side wall and the bottom wall of the groove so as to form a central groove; (f) forming a center insulating material in the central groove; and (g) removing part of the second surface of the substrate to expose the first conductive metal, the first insulating material and the center insulating material.
The present invention is further directed to a substrate with a via. The substrate comprises a substrate, a first insulating material, a center insulating material and a first conductive metal. The substrate has a first surface, a second surface and a via. The via penetrates the substrate, and has an inner side wall. The first insulating material is a hollow pillar disposed on the inner side wall of the via. The center insulating material is a solid pillar, disposed at the center of the via, and spaced from the first insulating material. The first conductive metal is disposed between the first insulating material and the center insulating material, and surrounds the center insulating material so as to form a hollow pillar.
The present invention is further directed to a substrate with a via. The substrate comprises a substrate, a first insulating material and a plurality of grooves. The substrate has a first surface, a second surface and a via. The via penetrates the substrate, and has an inner side wall. The first insulating material is disposed in the via and adhered to the inner side wall of the via. The grooves are disposed in the first insulating material; each of the grooves penetrates the first insulating material, and comprises a third insulating material and a third conductive metal. The third insulating material is a solid pillar disposed at the center of the groove, and the third conductive metal surrounds the third insulating material.
In the present invention, thicker insulating material can be formed in the via. Also, the thickness of the insulating material in the via is even. Moreover, the polymer is used as an insulating material in the present invention, so polymers with different materials can be chosen for specific processes.
Referring to
Referring to
Afterward, referring to
The first method is that the polymer 263 is dispersed on the first surface 211 of the substrate 21, and the position of the polymer 263 corresponds to the central groove 234, as shown in
The second method is that a plurality of first vents 237 are formed to connect the central groove 234 to the second surface 212 of the substrate 21, as shown in
The third method is that the polymer 263 is atomized and deposited in the central groove 234 by spray coating so as to form the center insulating material 223, as shown in
Afterward, referring to
Referring to
Referring to
The first method is that the polymer 261 is dispersed on the first surface 211 of the substrate 21, and the position of the polymer 261 corresponds to the annular groove 235, as shown in
The second method is that a plurality of second vents 238 are formed to connect the annular groove 235 to the second surface 212 of the substrate 21, as shown in
Alternatively, the polymer 261 can be partially dispersed at a position corresponding to the annular groove 235. The annular groove 235 and the second vents 238 are then filled with the polymer 261 so as to form the first insulating material 221.
The third method is that the polymer 261 is atomized and deposited in the annular groove 235 by spray coating so as to form the first insulating material 221, as shown in
Afterward, referring to
In the embodiment, a first photo resist layer 341 is formed on the first surface 311 of the substrate 31, a first pattern 342 is formed on the first photo resist layer 341, and the first pattern 342 is an annular opening, as shown in
Referring to
The first method is that the polymer 361 is dispersed on the first surface 311 of the substrate 31, and the position of the polymer 361 corresponds to the annular groove 335, as shown in
The second method is that a plurality of second vents 338 are formed to connect the annular groove 335 to the second surface 312 of the substrate 31, as shown in
The third method is that the polymer 361 is atomized and deposited in the annular groove 335 by spray coating so as to form the first insulating material 321, as shown in
Referring to
Referring to
Afterward, referring to
The first method is that the polymer 363 is dispersed on the first surface 311 of the substrate 31, and the position of the polymer 363 corresponds to the central groove 334, as shown in
The second method is that a plurality of first vents 337 are formed to connect the central groove 334 to the second surface 312 of the substrate 31, as shown in
The third method is that the polymer 363 is atomized and deposited in the central groove 334 by spray coating so as to form the center insulating material 323, as shown in
Afterward, referring to
The substrate 41 has a first surface 411, a second surface 412 and a via 413. The via 413 penetrates the substrate 41, and has an inner side wall 414. The first insulating material 421 is a hollow pillar disposed on the inner side wall 414 of the via 413. The center insulating material 423 is a solid pillar, disposed at the center of the via 413, and spaced from the first insulating material 421. The first conductive metal 422 is disposed between the first insulating material 421 and the center insulating material 423, and surrounds the center insulating material 423 so as to form a hollow pillar. In the embodiment, the first insulating material 421 contacts the first conductive metal 422, and the center insulating material 423 contacts the first conductive metal 422. That is, a three-layered structure with insulating material and conductive material in alternate layers is formed in the via 413, and the structure includes the center insulating material 423, the first conductive metal 422 and the first insulating material 421 from the center to the edge. The center insulating material 423 and the first insulating material 421 may be the same or different.
The substrate 4 with a via further comprises a passivation layer 451 and a conducting layer 453. The passivation layer 451 is disposed on the first surface 411 or the second surface 412 of the substrate 41. In the embodiment, the passivation layer 451 is disposed on the first surface 411 of the substrate 41. The passivation layer 451 has an opening 452, so that the passivation layer 451 covers part of the first insulating material 421 and exposes part of the first insulating material 421. The conducting layer 453 is disposed on the passivation layer 451, and covers part of the first insulating material 421, the first conductive metal 422 and the center insulating material 423.
The substrate 51 has a first surface 511, a second surface 512 and a via 513. The via 513 penetrates the substrate 51, and has an inner side wall 514. The first insulating material 521 is a hollow pillar disposed on the inner side wall 514 of the via 513. The center insulating material 523 is a solid pillar, disposed at the center of the via 513, and spaced from the first insulating material 521. The first conductive metal 522 is disposed between the center insulating material 523 and the second insulating material 525, and surrounds the center insulating material 523 so as to form a hollow pillar. The second insulating material 525 is disposed between the first conductive metal 522 and the second conductive metal 524, and surrounds the first conductive metal 522 so as to form a hollow pillar. The second conductive metal 524 is disposed between the second insulating material 515 and the first insulating material 521, and surrounds the second insulating material 525 so as to form a hollow pillar. In the embodiment, the second insulating material 525 contacts the first conductive metal 522, the second conductive metal 524 contacts the second insulating material 525, and the second conductive metal 524 contacts the first insulating material 521. That is, a five-layered structure with insulating material and conductive material in alternate layers is formed in the via 513, and the structure includes the center insulating material 523, the first conductive metal 522, the second insulating material 525, the second conductive metal 524 and the first insulating material 521 from the center to the edge. The center insulating material 523, the first insulating material 521 and the second insulating material 525 may be the same or different. The material of the first conductive metal 522 and the second conductive metal 524 may be the same or different.
Moreover, it is understood that, in the substrate 5 with a via, more layers of insulating material and conductive metal can be placed between the center insulating material 523 and the first insulating material 521, so as to form a multi-layered structure with insulating material and conductive material in alternate layers.
The substrate 61 has a first surface 611, a second surface 612 and a via 613. The via 613 penetrates the substrate 61, and has an inner side wall 614. The first insulating material 621 is disposed in the via 613, and attached to the inner side wall 614 of the via 613. The grooves 629 are disposed in the first insulating material 621. Each of the grooves 629 penetrates the first insulating material 621, and comprises a third insulating material 627 and a third conductive metal 626. The third insulating material 627 is a solid pillar, and disposed at the center of the grooves 629. The third conductive metal 626 surrounds and contacts the third insulating material 627, and contacts the first insulating material 621. The first insulating material 621 and the third insulating material 627 may be the same or different.
Moreover, it is understood that, in the substrate 6 with a via, more layers of insulating material and conductive metal may be placed between the third insulating material 627 and the third conductive metal 626 of each of the grooves 629, or between the third conductive metal 626 and the first insulating material 621 of each of the grooves 629, so as to form a multi-layered structure with insulating material and conductive material in alternate layers.
The substrate 6 with a via further comprises a passivation layer (not shown) and a conducting layer (not shown). The passivation layer is disposed on the first surface 611 or the second surface 612 of the substrate 61, and has a plurality of openings. The position of each of the openings of the passivation layer corresponds to each of the grooves 629, and the diameter of each of the openings of the passivation layer is larger than that of each of the grooves 629, so that the passivation layer covers part of the first insulating material 621 and exposes part of the first insulating material 621. The conducting layer is disposed on the passivation layer, and covers part of the first insulating material 621, the third conductive metal 626 and the third insulating material 627.
While several embodiments of the present invention have been illustrated and described, various modifications and improvements can be made by those skilled in the art. The embodiments of the present invention are therefore described in an illustrative but not restrictive sense. It is intended that the present invention should not be limited to the particular forms as illustrated, and that all modifications which maintain the spirit and scope of the present invention are within the scope defined in the appended claims.
Claims
1. A method for forming a via in a substrate, comprising:
- (a) providing a substrate having a first surface and a second surface;
- (b) forming a groove that has a side wall and a bottom wall on the first surface of the substrate;
- (c) forming a first conductive metal on the side wall and the bottom wall of the groove so as to form a central groove;
- (d) forming a center insulating material in the central groove;
- (e) forming an annular groove that surrounds the first conductive metal on the first surface of the substrate;
- (f) forming a first insulating material in the annular groove; and
- (g) removing part of the second surface of the substrate to expose the first conductive metal, the center insulating material and the first insulating material.
2. The method as claimed in claim 1, wherein Step (b) comprises:
- (b1) forming a first photo resist layer on the first surface of the substrate;
- (b2) forming a first opening on the first photo resist layer; and
- (b3) forming the groove on the substrate according to the first opening.
3. The method as claimed in claim 1, wherein Step (d) comprises:
- (d1) dispersing a polymer at a position corresponding to the central groove; and
- (d2) impelling the polymer into the central groove by vacuuming so as to form the center insulating material.
4. The method as claimed in claim 1, wherein Step (d) comprises:
- (d1) forming a plurality of first vents so as to connect the central groove to the second surface of the substrate;
- (d2) dispersing a polymer at a position corresponding to the central groove; and
- (d3) filling the central groove and the first vents with the polymer so as to form the center insulating material.
5. The method as claimed in claim 1, wherein Step (e) comprises:
- (e1) forming a second photo resist layer on the first surface of the substrate;
- (e2) forming a second opening on the second photo resist layer so that the position of the second opening corresponds to the groove, and the diameter of the second opening is larger than that of the groove; and
- (e3) forming the annular groove on the substrate according to the second opening.
6. The method as claimed in claim 1, wherein in Step (e), the annular groove does not penetrate the substrate.
7. The method as claimed in claim 1, wherein Step (f) comprises:
- (f1) dispersing a polymer at a position corresponding to the annular groove; and
- (f2) impelling the polymer into the annular groove by vacuuming so as to form the first insulating material.
8. The method as claimed in claim 1, wherein Step (f) comprises:
- (f1) forming a plurality of second vents so as to connect the annular groove to the second surface of the substrate;
- (f2) dispersing a polymer at a position corresponding to the annular groove; and
- (d3) filling the annular groove and the second vents with the polymer so as to form the first insulating material.
9. A method for forming a via in a substrate, comprising:
- (a) providing a substrate having a first surface and a second surface;
- (b) forming an annular groove and a pillar on the first surface of the substrate so that the annular groove surrounds the pillar;
- (c) forming a first insulating material in the annular groove;
- (d) removing the pillar of the substrate so as to form a groove that has a side wall and a bottom wall on the substrate;
- (e) forming a first conductive metal on the side wall and the bottom wall of the groove so as to form a central groove;
- (f) forming a center insulating material in the central groove; and
- (g) removing part of the second surface of the substrate to expose the first conductive metal, the first insulating material and the center insulating material.
10. The method as claimed in claim 9, wherein Step (b) comprises:
- (b1) forming a first photo resist layer on the first surface of the substrate;
- (b2) forming a first pattern on the first photo resist layer; and
- (b3) forming the annular groove and the pillar on the substrate according to the first pattern.
11. The method as claimed in claim 9, wherein Step (c) comprises:
- (c1) dispersing a polymer at a position corresponding to the annular groove;
- (c2) impelling the polymer into the annular groove by vacuuming so as to form the first insulating material; and
- (c3) removing the polymer which is outside the annular groove.
12. The method as claimed in claim 9, wherein Step (c) comprises:
- (c1) forming a plurality of first vents so as to connect the annular groove to the second surface of the substrate;
- (c2) dispersing a polymer at a position corresponding to the annular groove;
- (c3) filling the annular groove and the first vents with the polymer so as to form the first insulating material; and
- (c4) removing the polymer which is outside the annular groove and the first vents.
13. The method as claimed in claim 9, wherein Step (c) comprises:
- (c1) atomizing and depositing a polymer in the annular groove by spray coating so as to form the first insulating material; and
- (c2) removing the polymer which is outside the annular groove.
14. The method as claimed in claim 9, wherein Step (d) comprises:
- (d1) forming a second photo resist layer on the first surface of the substrate;
- (d2) forming a second opening on the second photo resist layer so that the position of the second opening corresponds to the pillar; and
- (d3) removing the pillar according to the second opening so as to form the groove.
15. The method as claimed in claim 9, wherein Step (f) comprises:
- (f1) dispersing a polymer at a position corresponding to the central groove; and
- (f2) impelling the polymer into the central groove by vacuuming so as to form the center insulating material.
16. The method as claimed in claim 9, wherein Step (f) comprises:
- (f1) forming a plurality of second vents so as to connect the central groove to the second surface of the substrate;
- (f2) dispersing a polymer at a position corresponding to the central groove; and
- (f3) filling the central groove and the second vents with the polymer so as to form the center insulating material.
17. A substrate with a via, comprising:
- a substrate, having a first surface, a second surface and a via that penetrates the substrate and has an inner side wall;
- a first insulating material, which is a hollow pillar, disposed on the inner side wall of the via;
- a center insulating material disposed at the center of the via, and the center insulating material is a solid pillar spaced from the first insulating material; and
- a first conductive metal, disposed between the first insulating material and the center insulating material, and the first conductive metal surrounds the center insulating material so as to form a hollow pillar.
18. The substrate as claimed in claim 17, wherein the first insulating material contacts the first conductive metal, and the center insulating material contacts the first conductive metal.
19. The substrate as claimed in claim 17, further comprising a second insulating material and a second conductive metal, disposed between the first conductive metal and the first insulating material, so that the second insulating material surrounds the first conductive metal, and the second conductive metal surrounds the second insulating material.
20. The substrate as claimed in claim 19, wherein the second insulating material contacts the first conductive metal, the second conductive metal contacts the second insulating material, and the second conductive metal contacts the first insulating material.
21. The substrate as claimed in claim 17, further comprising a passivation layer and a conducting layer, and the passivation layer is disposed on the first surface or the second surface of the substrate, and has an opening, so as to cover part of the first insulating material and expose part of the first insulating material, and the conducting layer is disposed on the passivation layer, and covers part of the first insulating material, the first conductive metal and the center insulating material.
22. A substrate with a via, comprising:
- a substrate, having a first surface, a second surface and a via that penetrates the substrate and has an inner side wall;
- a first insulating material, disposed in the via, and attached to the inner side wall of the via; and
- a plurality of grooves, disposed in the first insulating material, so that each of the grooves penetrates the first insulating material, and comprises a third insulating material and a third conductive metal, and the third insulating material is a solid pillar disposed at the center of the grooves, and the third conductive metal surrounds the third insulating material.
23. The substrate as claimed in claim 22, wherein the third conductive metal contacts the third insulating material, and the third conductive metal contacts the first insulating material.
24. The substrate as claimed in claim 22, further comprising a passivation layer and a conducting layer, and the passivation layer is disposed on the first surface or the second surface of the substrate, and has a plurality of openings; the position of each of the openings of the passivation layer corresponds to each of the grooves, the diameter of each of the openings of the passivation layer is larger than that of each of the grooves, so that the passivation layer covers part of the first insulating material and exposes part of the first insulating material; the conducting layer is disposed on the passivation layer, and covers part of the first insulating material, the third conductive metal and the third insulating material.
Type: Application
Filed: Sep 30, 2008
Publication Date: Jun 4, 2009
Applicant: ADVANCED SEMICONDUCTOR ENGINEERING, INC. (Kaohsiung)
Inventor: Meng-Jen Wang (Kaohsiung)
Application Number: 12/241,219
International Classification: H01L 21/768 (20060101); H01L 23/52 (20060101);