Cross OD FinFET Patterning
A method of forming an integrated circuit structure includes providing a semiconductor substrate; providing a first lithography mask, a second lithography mask, and a third lithography mask; forming a first mask layer over the semiconductor substrate, wherein a pattern of the first mask layer is defined using the first lithography mask; performing a first etch to the semiconductor substrate to define an active region using the first mask layer; forming a second mask layer having a plurality of mask strips over the semiconductor substrate and over the active region; forming a third mask layer over the second mask layer, wherein a middle portion of the plurality of mask strips is exposed through an opening in the third mask layer, and end portions of the plurality of mask strips are covered by the third mask layer; and performing a second etch to the semiconductor substrate through the opening.
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This application is a divisional of U.S. patent application Ser. No. 12/843,728, entitled “Cross OD FinFET Patterning,” filed on Jul. 26, 2010, which application further claims the benefit of U.S. Provisional Application No. 61/255,370, entitled “Cross OD FinFET Patterning,” filed on Oct. 27, 2009, which applications are hereby incorporated herein by reference.
CROSS-REFERENCE TO RELATED APPLICATIONThis application relates to the following U.S. Patent Application: application Ser. No. 12/370,152, filed Feb. 12, 2009, and entitled “Method of Pitch Halving;” which application is hereby incorporated herein by reference.
TECHNICAL FIELDThis application relates generally to integrated circuits, and more particularly to semiconductor fins and Fin field effect transistors (FinFETs) and methods of forming the same.
BACKGROUNDWith the increasing down-scaling of integrated circuits and increasingly demanding requirements to the speed of integrated circuits, transistors need to have higher drive currents with smaller dimensions. Fin field-effect transistors (FinFET) were thus developed. FinFET transistors have increased channel widths, which channels include the channels formed on the sidewalls of the fins and the channels on the top surfaces of the fins. Since the drive currents of transistors are proportional to the channel widths, the drive currents of FinFETs are increased.
To maximize the channel width of a FinFET, the FinFET may include multiple fins, with the ends of the fins connected to a same source and a same drain. In conventional processes, the formation of multi-fin FinFET include forming a plurality of fins parallel to reach other, forming a gate stack on the plurality of fins, and interconnecting the ends of the plurality of fins to form a source region and a drain region. The interconnection of the ends of the plurality of fins may be achieved through two methods. In the first method, large contact plugs are formed to interconnect the ends of the plurality of fins. In the second method, an epitaxial process is performed to grow a semiconductor material so that the ends of the plurality of fins merge with each other to form block source and drain regions. Source and drain contact plugs are then formed to connect to the block source and drain regions. These methods, however, suffer from high-cost and low-throughput problems.
SUMMARYIn accordance with one aspect of the embodiment, a method of forming an integrated circuit structure includes providing a semiconductor substrate; providing a first lithography mask, a second lithography mask, and a third lithography mask; forming a first mask layer over the semiconductor substrate, wherein a pattern of the first mask layer is defined using the first lithography mask; performing a first etch to the semiconductor substrate to define an active region using the first mask layer; forming a second mask layer having a plurality of mask strips over the semiconductor substrate and over the active region; forming a third mask layer over the second mask layer, wherein a middle portion of the plurality of mask strips is exposed through an opening in the third mask layer, and end portions of the plurality of mask strips are covered by the third mask layer; and performing a second etch to the semiconductor substrate through the opening.
Other embodiments are also disclosed.
For a more complete understanding of the embodiments, and the advantages thereof, reference is now made to the following descriptions taken in conjunction with the accompanying drawings, in which:
The making and using of the embodiments of the disclosure are discussed in detail below. It should be appreciated, however, that the embodiments provide many applicable inventive concepts that can be embodied in a wide variety of specific contexts. The specific embodiments discussed are merely illustrative of specific ways to make and use the embodiments, and do not limit the scope of the disclosure.
A novel method for forming fin field-effect transistor(s) (FinFET) comprising multiple semiconductor fins is provided. The intermediate stages in the manufacturing of an embodiment are illustrated. The variations of the embodiment are then discussed. Throughout the various views and illustrative embodiments, like reference numbers are used to designate like elements.
In a first embodiment, three lithography masks are used in the formation of semiconductor fins and source and drain regions (referred to as source/drain regions hereinafter) of a FinFET. The first lithography mask is used to define an active region of the FinFET, wherein the active region includes the source/drain regions and (semiconductor) fins for forming channel regions of the FinFET. The second lithography mask is used to define the pattern of the fins, while the third lithography mask is to define the boundaries of the fins.
Hard mask 30 is formed over substrate 20. In an embodiment, hard mask 30 comprises a plurality of layers formed of different materials. For example, silicon nitride layer 22 is formed over substrate 20. Optionally, a pad oxide (not shown) may be formed between substrate 20 and silicon nitride layer 22. Amorphous carbon layer 24 is formed over silicon nitride layer 22. Plasma enhanced (PE) oxide 26, which may be a silicon oxide formed using plasma enhanced chemical vapor deposition (PECVD), is formed over amorphous carbon layer 24. Silicon oxynitride layer 28 is formed over PE oxide 26. PE oxide 26 and silicon oxynitride layer 28 are both for lithography purpose, for example, for reducing the reflection of the yellow light used in the exposure of the overlying photo resist 32. Hard mask 30 may also include additional layers (not shown) comprising, but are not limited to, an additional amorphous layer over silicon oxynitride layer 28, an additional silicon oxynitride layer over the additional amorphous carbon layer, and/or an additional bottom anti-reflective coating (ARC) over the additional silicon oxynitride layer. In an exemplary embodiment, layers 22, 24, 26, and 28 may have thicknesses equal to about 700 Å, 1400 Å, 150 Å, and 200 Å, respectively. One skilled in the art will realize, however, that the dimensions recited throughout the description are merely examples, and will change if different formation technologies are used, or the process optimization such demands.
Photo resist 32 is applied and patterned, so that the pattern of the active region of the FinFET and a large-pitch active region are defined. Photo resist 32 is exposed using first lithography mask 10 as shown in
Next, hard mask 30 is patterned by etching into hard mask 30, for example, using plasma-assisted dry etching. Photo resist 32 is then removed. The resulting structure is shown in
Referring to
Next, as shown in
In
Next, using mask strips 58 and photo resist 62 as masks, exposed portions of silicon nitride layer 22 are removed, so that the underlying substrate 20 is exposed. The exposed portions of substrate 20 are then etched, forming trenches 66. Photo resist 62 and mask strips 58 are then removed.
Referring to
Referring to
Next, as shown in
In
In the second embodiment, although each of first hard mask 122 and second mask 126 are illustrated as being a single layer, they may also be replaced by multi-layer hard masks similar to hard mask 30 as shown in
The embodiments have several advantageous features. By simultaneously forming fins and source/drain pads of FinFETs, the manufacturing throughput is increased, and the manufacturing cost is reduced. In the resulting structures, semiconductor fins may have pitches less than the minimum pitch allowed by the forming technology, and hence the channel widths of the resulting FinFETs are further increased without causing the increase in the chip area occupied by the FinFETs.
Although the embodiments and their advantages have been described in detail, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the embodiments as defined by the appended claims. Moreover, the scope of the present application is not intended to be limited to the particular embodiments of the process, machine, manufacture, and composition of matter, means, methods and steps described in the specification. As one of ordinary skill in the art will readily appreciate from the disclosure, processes, machines, manufacture, compositions of matter, means, methods, or steps, presently existing or later to be developed, that perform substantially the same function or achieve substantially the same result as the corresponding embodiments described herein may be utilized according to the disclosure. Accordingly, the appended claims are intended to include within their scope such processes, machines, manufacture, compositions of matter, means, methods, or steps. In addition, each claim constitutes a separate embodiment, and the combination of various claims and embodiments are within the scope of the disclosure.
Claims
1. A method comprising:
- forming an insulation layer over a semiconductor substrate;
- forming a hard mask over the insulation layer;
- performing a first patterning step on the hard mask and the insulation layer to form a first trench, wherein the semiconductor substrate is exposed through the first trench;
- filling the first trench with a filling material;
- patterning the hard mask to expose a portion of the insulation layer;
- removing the portion of the insulation layer exposed through the hard mask to form a second trench, wherein the semiconductor substrate is exposed through the second trench;
- removing the hard mask and the filling material to expose portions of the semiconductor substrate; and
- epitaxially growing a semiconductor material from exposed portions of the semiconductor substrate.
2. The method of claim 1, wherein the semiconductor material comprises a semiconductor fin in the first trench, and a source/drain pad in the second trench, and wherein an end of the semiconductor fin is connected to the source/drain pad.
3. The method of claim 2 further comprising, after the step of epitaxially growing the semiconductor material, recessing the insulation layer to expose sidewalls of the semiconductor fin and sidewalls of the source/drain pad.
4. The method of claim 2 further comprising:
- forming a gate dielectric on a top surface and sidewalls of the semiconductor fin; and
- forming a gate electrode over the gate dielectric.
5. The method of claim 1, wherein the insulation layer comprises an oxide.
6. The method of claim 1, wherein the semiconductor substrate is a silicon substrate.
7. The method of claim 1, wherein the hard mask and the filling material are formed of a same material.
8. A method comprising:
- forming an insulation layer over a semiconductor substrate;
- performing a first patterning to remove a first portion of the insulation layer from over a first portion of the semiconductor substrate;
- performing a second patterning to remove a second portion of the insulation layer from over a second portion of the semiconductor substrate;
- epitaxially growing a semiconductor material, wherein the semiconductor material comprises a first portion grown from the first portion of the semiconductor substrate, and a second portion grown from the second portion of the semiconductor substrate, and wherein the first portion and the second portion of the semiconductor material are between remaining portions of the insulation layer;
- recessing the insulation layer to form a fin from the first portion of the semiconductor material, wherein the fin is higher than a recessed top surface of the insulation layer;
- forming a gate dielectric on a top surface and sidewalls of the fin;
- forming a gate electrode over the gate dielectric; and
- forming a source/drain region, wherein a portion of the source/drain region is in a portion of the second portion of the semiconductor material.
9. The method of claim 8 further comprising, after the first portion of the insulation layer is removed, filling a hard mask into a trench left by the first portion of the insulation layer.
10. The method of claim 9 further comprising, after the step of the second patterning and before the step of epitaxially growing the semiconductor material, removing remaining portions of the hard mask.
11. The method of claim 8, wherein the insulation layer comprises an oxide.
12. The method of claim 8, wherein the semiconductor substrate is a silicon substrate.
13. The method of claim 8, wherein the first patterning and the second patterning are separate pattering steps.
Type: Application
Filed: Jan 4, 2012
Publication Date: Apr 26, 2012
Patent Grant number: 8796156
Applicant: Taiwan Semiconductor Manufacturing Company, Ltd. (Hasin-Chu)
Inventors: Ming-Feng Shieh (Yongkang City), Tsung-Lin Lee (Hsin-Chu), Chang-Yun Chang (Taipei)
Application Number: 13/343,586
International Classification: H01L 21/336 (20060101);