CHIP PACKAGE WITH THERMAL DISSIPATION STRUCTURE AND METHOD FOR FORMING THE SAME
Structures and formation methods of a chip package are provided. The chip package includes a first package structure including a first semiconductor die that has a first side and a second side opposite thereto. The chip package also includes a package layer partially or completely encapsulating the first semiconductor die, and a conductive feature in the package layer. The chip package further includes a first heat-spreading layer over the first side of the first semiconductor die and a first cap layer on the first heat-spreading layer.
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In the packaging of integrated circuits, semiconductor dies may be stacked and bonded to other package components (e.g., interposers and package substrates). The resulting packages are known as three-dimensional integrated circuits (3DICs). The package-on-package (PoP) structure is one type of 3DIC package, and PoP technology has begun to be developed. In such a PoP structure, a top package with a semiconductor die is bonded to a bottom package with another semiconductor die.
By adopting PoP technology, various packages with different or similar functions are integrated together. However, this packaging technology for semiconductor devices faces manufacturing challenges. For example, the heat dissipation is a challenge in the PoP structure. The heat generated from the semiconductor die may negatively affect the electrical performance of the devices in the semiconductor dies as well as the reliability.
Aspects of the present disclosure are best understood from the following detailed description when read with the accompanying figures. It should be noted that, in accordance with the standard practice in the industry, various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or reduced for clarity of discussion.
The following disclosure provides many different embodiments, or examples, for implementing different features of the provided subject matter. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.
Further, spatially relative terms, such as “beneath,” “below,” “lower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations) and the spatially relative descriptors used herein may likewise be interpreted accordingly.
Some embodiments of the disclosure are described.
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The adhesive layer 102 may be made of glue, or may be a lamination material, such as a foil. In some embodiments, the adhesive layer 102 is photosensitive and is easily detached from the carrier substrate 100 by light irradiation. For example, shining ultra-violet (UV) light or laser light on the carrier substrate 100 is used to detach the adhesive layer 102. In some embodiments, the adhesive layer 102 is a light-to-heat-conversion (LTHC) coating. In some other embodiments, the adhesive layer 102 is heat-sensitive.
In some embodiments, the base layer 202 has a material that is different from a thermal interface material (TIM) and is formed on the adhesive layer 102 by a deposition method. Moreover, the base layer 202 has a thickness that is less than that of a thermal interface material. In some embodiments, the base layer 202 is a polymer layer or a polymer-containing layer. For example, the base layer 202 may be a poly-p-phenylenebenzobisthiazole (PBO) layer, a polyimide (PI) layer, another suitable layer, or a combination thereof.
Afterwards, a seed layer 204 is deposited over the base layer 202, as shown in
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A variety of device elements (not shown) may be formed in or over the semiconductor substrate 212. Such device elements may include active devices and/or passive devices. An adhesive film (not shown), such as a die attach film (DAF), may be employed to attach the semiconductor dies 220 onto the base layer 202.
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In some embodiments, the package layer 222 includes a polymer material. In some embodiments, the package layer 222 includes a molding compound. For example, a liquid molding compound material is applied over the base layer 202, the conductive features 210, and the semiconductor dies 220 to encapsulate the conductive features 210 and the semiconductor dies 220. Afterwards, a thermal process is then applied to harden the liquid molding compound material, thereby transforming it into the package layer 222. In some embodiments, the thermal process is performed at a temperature in a range from about 200 degrees C. to about 230 degrees C. The operation time of the thermal process may be in a range from about 1 hour to about 3 hours.
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The pattern of the redistribution layer 225 can be varied according to design requirements. For example, if a different circuit layout is used to establish the connections between the conductive features 210 and the conductive pads 215, the pattern of the redistribution layer 225 may be varied accordingly. The conductive features 210 may be used as TPVs. In some embodiments, the TPVs surround the semiconductor dies 220. In some embodiments, the redistribution layer 225 is made of a metal material. The metal material may include copper, aluminum, tungsten, nickel, titanium, gold, platinum, silver, another suitable material, or a combination thereof.
The passivation layer 224 may be a single layer or a multi-layer structure. In some embodiments, the passivation layer 224 is a single layer and has openings (not shown) exposing conductive portions of the redistribution layer 225. Bond pads (not shown) may be formed over the exposed redistribution layer 225. The passivation layer 224 is made of dielectric material(s) and provides stress relief for bonding stress incurred during subsequent bonding processes. In some embodiments, the passivation layer 224 is made of a polymer material, such as polyimide, PBO, the like, or a combination thereof. Alternatively or additionally, the passivation layer 224 may include benzocyclobutene (BCB). In some embodiments, the passivation layer 224 includes silicon oxide, silicon oxynitride, silicon nitride, silicon carbide, another suitable material, or a combination thereof.
Multiple deposition, coating, and/or etching processes may be used to form the redistribution structure including the redistribution layer 225 and the passivation layer 224. In some embodiments, one or more thermal processes are performed during the formation the redistribution structure. For example, portions of the passivation layer 224 may be made of a polymer material that is formed using a process involving a thermal operation.
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In some embodiments, as shown in
In some embodiments, thermal conductive plugs 243 are formed to pass through the first cap layer 242, thereby connecting the first heat-spreading layers 240 and second heat-spreading layers 244. The thermal conductive plugs 243 may be made of metal, such as copper, and formed by a PVD process, a CVD process, another applicable process, or a combination thereof.
Note that embodiments of the disclosure are not limited to
In some embodiments, a dicing process is performed to separate the structure shown in
According to some embodiments of the disclosure, since the heat-spreading layer, such as copper, has better thermal conductivity and larger heat capacity, the thermal transfer rate can be effectively improved. Moreover, the heat-spreading layer can be formed on the underlying base layer without using an additional TIM layer. As a result, the thermal transfer rate can be improved further. Additionally, since the thermal dissipation structure including one or more heat-spreading layers and one or more cap layers can improve the thermal transfer rate, there is no need to increase the thickness of the semiconductor dies for heat dissipation. As a result, compared to the case of increasing the thickness of the semiconductor dies for heat dissipation, the increase of the dimensions (e.g., the height) of the package can be minimized.
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In some embodiments, the elements 400 are mounted or bonded onto the conductive features 210 through one or more connectors 402, as shown in
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Many variations and/or modifications can be made to embodiments of the disclosure. For example, although the embodiments shown in
In some embodiments, as shown in
The materials and formation of the second heat-spreading layer 244′ and the second cap layer 246′ may be the same as or similar to these of the first heat-spreading layer 240′ and the first cap layer 242′.
In some embodiments, thermal conductive plugs 243′ are formed in the first cap layer 242′ to connect the first heat-spreading layers 240′ and second heat-spreading layers 244′. The thermal conductive plugs 243′ may be made of a material that is the same as or similar to that of the thermal conductive plugs 243 shown in
Note that embodiments of the disclosure are not limited to
In some embodiments, a dicing process is performed to separate the structure shown in
According to some embodiments of the disclosure, since the heat-spreading layer, such as copper, has better thermal conductivity and larger heat capacity, the thermal transfer rate can be effectively improved. Moreover, the heat-spreading layer can be formed on the underlying base layer without using an additional TIM layer. As a result, the thermal transfer rate can be improved further. Furthermore, since the one or more heat-spreading layers are merely formed above the hot spot region of the corresponding semiconductor die, the manufacturing cost of the thermal dissipation structure can be reduced. Additionally, since the thermal dissipation structure including one or more heat-spreading layers and one or more cap layers can improve the thermal transfer rate, there is no need to increase the thickness of the semiconductor dies for heat dissipation. As a result, compared to the case of increasing the thickness of the semiconductor dies for heat dissipation, the increase of the size (e.g., the height) of the package can be minimized.
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Embodiments of the disclosure provide structures and formation methods of chip packages. The chip package includes a PoP structure having a thermal dissipation structure integrated into the bottom package and disposed between the top and bottom packages. Therefore, the thermal transfer rate for the chip package including a PoP structure can be effectively improved without increasing the thickness of the semiconductor die in the bottom package. Moreover, the hot spot issue in the bottom package can be effectively eliminated or mitigated by the thermal dissipation structure that is integrated into the bottom package. As a result, the reliability and performance of the chip package are improved significantly.
In accordance with some embodiments, a chip package is provided. The chip package includes a first package structure including a first semiconductor die that has a first side and a second side opposite thereto. The chip package also includes a package layer at least partially encapsulating the first semiconductor die, and a conductive feature in the package layer. The chip package further includes a first heat-spreading layer over the first side of the first semiconductor die and a first cap layer on the first heat-spreading layer.
In accordance with some embodiments, a chip package is provided. The chip package includes a first package structure including a first semiconductor die that has a first side and a second side opposite thereto. The chip package also includes a package layer at least partially encapsulating the first semiconductor die, and a conductive feature in the package layer. The chip package further includes a first heat-spreading layer over the first side of the first semiconductor die, a first cap layer on the first heat-spreading layer, a second heat-spreading layer on the first cap layer, and a second cap layer on the second heat-spreading layer.
In accordance with some embodiments, a method for forming a chip package is provided. The method includes forming a conductive feature and attaching a first semiconductor die over the carrier substrate. The method also includes forming a package layer over the carrier substrate to at least partially encapsulate the first semiconductor die and the conductive feature, and removing the carrier substrate. The method further includes forming a first heat-spreading layer over the package layer and the first semiconductor die and forming a first cap layer on the first heat-spreading layer, and stacking a second semiconductor die over the first cap layer.
The foregoing outlines features of several embodiments so that those skilled in the art may better understand the aspects of the present disclosure. Those skilled in the art should appreciate that they may readily use the present disclosure as a basis for designing or modifying other processes and structures for carrying out the same purposes and/or achieving the same advantages of the embodiments introduced herein. Those skilled in the art should also realize that such equivalent constructions do not depart from the spirit and scope of the present disclosure, and that they may make various changes, substitutions, and alterations herein without departing from the spirit and scope of the present disclosure.
Claims
1. A chip package, comprising:
- a first package structure, comprising: a first semiconductor die having a first side and a second side opposite thereto; a package layer at least partially encapsulating the first semiconductor die; a conductive feature in the package layer; a first heat-spreading layer over the first side of the first semiconductor die; and a first cap layer on the first heat-spreading layer, wherein the first heat-spreading layer is disposed above a hot spot region of the first semiconductor die and has an area that is substantially the same as or larger than that of the hot spot region.
2. The chip package as claimed in claim 1, wherein the first heat-spreading layer extends over the package layer.
3. The chip package as claimed in claim 2, wherein the first heat-spreading layer is disposed over the conductive feature, and a portion of the first cap layer passes through the first heat-spreading layer and surrounds a top surface of the conductive feature.
4. The chip package as claimed in claim 3, further comprising:
- a second package structure, comprising: a second semiconductor die over the first cap layer; and a connector between the first semiconductor die and the second semiconductor die, wherein the connector passes through the first heat-spreading layer and the portion of the first cap layer, such that the connector is electrically connected to the top surface of the conductive feature.
5. The chip package as claimed in claim 1, wherein the first cap layer covers a sidewall of the first heat-spreading layer and surrounds a top surface of the conductive feature.
6. (canceled)
7. The chip package as claimed in claim 5, further comprising:
- a second package structure, comprising: a second semiconductor die over the first cap layer; and a connector between the first semiconductor die and the second semiconductor die, wherein the connector passes through the first cap layer, such that the connector is electrically connected to the top surface of the conductive feature.
8. The chip package as claimed in claim 1, wherein the first package structure further comprises a redistribution layer over the package layer and the second side of the first semiconductor die, and wherein the conductive feature is electrically connected to the first semiconductor die through the redistribution layer.
9. The chip package as claimed in claim 1, wherein the first heat-spreading layer comprises copper.
10. A chip package, comprising:
- a first package structure, comprising: a first semiconductor die having a first side and a second side opposite thereto; a package layer at least partially encapsulating the first semiconductor die; a conductive feature in the package layer; a base layer over the first side of the first semiconductor die; a first heat-spreading layer electrically insulating from the first semiconductor die by the base layer; a first cap layer on the first heat-spreading layer; a second heat-spreading layer on the first cap layer; and a second cap layer on the second heat-spreading layer.
11. The chip package as claimed in claim 10, wherein the first package structure further comprises a plurality of thermal conductive plugs in the first cap layer to connect the first and second heat-spreading layers.
12. The chip package as claimed in claim 10, wherein the first and second heat-spreading layers extend over the package layer and are disposed over the conductive feature, and wherein portions of the first and second cap layers pass through the first and second heat-spreading layers, respectively, and surround a top surface of the conductive feature.
13. The chip package as claimed in claim 12, further comprising:
- a second package structure, comprising: a second semiconductor die over the second cap layer; and a connector between the first semiconductor die and the second semiconductor die, wherein the connector passes through the of the first and second heat-spreading layers and the portions of the first and second cap layers, such that the connector is electrically connected to the top surface of the conductive feature.
14. The chip package as claimed in claim 10, wherein the first cap layer covers a sidewall of the first heat-spreading layer, the second cap layer covers a sidewall of the second heat-spreading layer, and the first and second cap layers surround a top surface of the conductive feature, and wherein the chip package further comprises:
- a second package structure, comprising: a second semiconductor die over the second cap layer; and a connector between the first semiconductor die and the second semiconductor die, wherein the connector passes through the first and second cap layers, such that the connector is electrically connected to the top surface of the conductive feature.
15. The chip package as claimed in claim 10, wherein the first and second heat-spreading layers comprise copper and are disposed above a hot spot region of the first semiconductor die, and wherein the first heat-spreading layer has an area that is substantially the same as or larger than that of the hot spot region and the second heat-spreading layer has an area that is the same as or larger than that of the hot spot region.
16. The chip package as claimed in claim 10, further comprising:
- a plurality of stacks of a third heat-spreading layer and a third cap layer on the second cap layer, wherein the area of each third heat-spreading layer is not the same and is different from that of the first and second heat-spreading layers.
17-20. (canceled)
21. A chip package, comprising:
- a first package structure, comprising: a first semiconductor die having a first side and a second side opposite thereto; a package layer at least partially encapsulating the first semiconductor die; a conductive feature in the package layer; a first heat-spreading layer disposed above a hot spot region over the first side of the first semiconductor die, wherein the first heat-spreading layer has a first area; a first cap layer on the first heat-spreading layer; a second heat-spreading layer on the first cap layer, wherein the second heat-spreading layer has a second area greater than the first area; and a second cap layer on the second heat-spreading layer.
22. The chip package as claimed in claim 21, further comprising:
- a second package structure, comprising: a second semiconductor die over the second cap layer; and a connector between the first semiconductor die and the second semiconductor die, wherein the connector passes through the first and second cap layers, such that the connector is electrically connected to the top surface of the conductive feature.
23. The chip package as claimed in claim 21, wherein the first heat-spreading layer and the second heat-spreading layer do not extend above the package layer.
24. The chip package as claimed in claim 21, wherein the first area is substantially the same as or larger than that of the hot spot region.
25. The chip package as claimed in claim 10, wherein the first and second heat-spreading layers comprise copper and are disposed above a hot spot region of the first semiconductor die.
Type: Application
Filed: Jul 14, 2016
Publication Date: Jan 18, 2018
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd. (Hsinchu)
Inventors: Chin-Hua WANG (New Taipei City), Po-Yao LIN (Zhudong Township), Shu-Shen YEH (Taoyuan City), Kuang-Chun LEE (New Taipei City), Shin-Puu JENG (Po-Shan Village), Shyue-Ter LEU (Hsinchu City), Cheng-Lin HUANG (Hsinchu City), Hsiu-Mei YU (Zhudong Township)
Application Number: 15/210,343