Semiconductor element
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Description
FIG. 1 is a front elevational view showing a semiconductor element according to the present invention;
FIG. 2 is a rear elevational view of the element of FIG. 1;
FIG. 3 is a top plan view of the element of FIG. 1;
FIG. 4 is a bottom plan view of the element of FIG. 1;
FIG. 5 is a right side elevational view of the element of FIG. 1, the left side elevational view being a mirror image of the right side elevational view; and,
FIG. 6 is a top front perspective view of the element of FIG. 1.
Claims
The ornamental design for a semiconductor element, as shown and described.
Referenced Cited
Patent History
Patent number: D441726
Type: Grant
Filed: Jan 13, 2000
Date of Patent: May 8, 2001
Assignee: Kabushiki Kaisha Toyoda Jidoshokki Seisakusho (Kariya)
Inventors: Kenichi Sofue (Kariya), Hiromitsu Yoshiyama (Kariya), Toshinari Fukatsu (Kariya), Toshiaki Nagase (Kariya), Jun Ishikawa (Kariya)
Primary Examiner: Brian N. Vinson
Attorney, Agent or Law Firm: Morgan & Finnegan, L.L.P.
Application Number: 29/116,970
Type: Grant
Filed: Jan 13, 2000
Date of Patent: May 8, 2001
Assignee: Kabushiki Kaisha Toyoda Jidoshokki Seisakusho (Kariya)
Inventors: Kenichi Sofue (Kariya), Hiromitsu Yoshiyama (Kariya), Toshinari Fukatsu (Kariya), Toshiaki Nagase (Kariya), Jun Ishikawa (Kariya)
Primary Examiner: Brian N. Vinson
Attorney, Agent or Law Firm: Morgan & Finnegan, L.L.P.
Application Number: 29/116,970
Classifications
Current U.S. Class:
Semiconductor, Transistor Or Integrated Circuit (24) (D13/182)
International Classification: 1303;
International Classification: 1303;