Piezoelectric conversion type semiconductor device
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Description
FIG. 1 is a front, top and right side perspective view of a piezoelectric conversion type semiconductor device, showing our new design;
FIG. 2 is a front elevational view thereof;
FIG. 3 is a rear elevational view thereof;
FIG. 4 is a top plan view thereof;
FIG. 5 is a bottom plan view thereof;
FIG. 6 is a left side elevational view thereof; and,
FIG. 7 is a right side elevational view thereof;
Referenced Cited
Patent History
Patent number: D427977
Type: Grant
Filed: Jun 18, 1999
Date of Patent: Jul 11, 2000
Assignee: Fujikura Ltd. (Tokyo)
Inventors: Takashi Takizawa (Kawasaki), Tatsuya Itoh (Akita), Naoshi Tsukada (Akita)
Primary Examiner: Brian N. Vinson
Attorney: Laff, Whitesel & Saret, Ltd.
Application Number: 0/106,663
Type: Grant
Filed: Jun 18, 1999
Date of Patent: Jul 11, 2000
Assignee: Fujikura Ltd. (Tokyo)
Inventors: Takashi Takizawa (Kawasaki), Tatsuya Itoh (Akita), Naoshi Tsukada (Akita)
Primary Examiner: Brian N. Vinson
Attorney: Laff, Whitesel & Saret, Ltd.
Application Number: 0/106,663
Classifications
Current U.S. Class:
Semiconductor, Transistor Or Integrated Circuit (24) (D13/182)
International Classification: 1303;
International Classification: 1303;