Grounded electrode for a plasma processing apparatus
Latest Hitachi High-Technologies Corporation Patents:
Description
Claims
The ornamental design for grounded electrode for a plasma processing apparatus, as shown.
Referenced Cited
U.S. Patent Documents
D404370 | January 19, 1999 | Kimura |
D404372 | January 19, 1999 | Ishii |
D427570 | July 4, 2000 | Ishii |
6495007 | December 17, 2002 | Wang |
6663762 | December 16, 2003 | Bleck et al. |
6749728 | June 15, 2004 | Wang |
D494551 | August 17, 2004 | Doba |
D494552 | August 17, 2004 | Tezuka et al. |
6843894 | January 18, 2005 | Berner et al. |
6908540 | June 21, 2005 | Kholodenko |
7025862 | April 11, 2006 | Herchen et al. |
7087144 | August 8, 2006 | Herchen |
7138039 | November 21, 2006 | Burkhart et al. |
20030066484 | April 10, 2003 | Morikage et al. |
Patent History
Patent number: D556704
Type: Grant
Filed: Aug 25, 2005
Date of Patent: Dec 4, 2007
Assignee: Hitachi High-Technologies Corporation (Tokyo)
Inventors: Tsutomu Nakamura (Hikari), Susumu Tauchi (Shunan), Akitaka Makino (Hikari)
Primary Examiner: Selina Sikder
Assistant Examiner: Thomas J Johannes
Attorney: Antonelli, Terry, Stout & Kraus, LLP.
Application Number: 29/236,982
Type: Grant
Filed: Aug 25, 2005
Date of Patent: Dec 4, 2007
Assignee: Hitachi High-Technologies Corporation (Tokyo)
Inventors: Tsutomu Nakamura (Hikari), Susumu Tauchi (Shunan), Akitaka Makino (Hikari)
Primary Examiner: Selina Sikder
Assistant Examiner: Thomas J Johannes
Attorney: Antonelli, Terry, Stout & Kraus, LLP.
Application Number: 29/236,982
Classifications
Current U.S. Class:
Semiconductor, Transistor Or Integrated Circuit (24) (D13/182)