Heat radiation fin of heat insulating cylinder for manufacturing semiconductor wafers
Latest Tokyo Electron Limited Patents:
- ETCHING METHOD AND PLASMA PROCESSING SYSTEM
- Method of transporting workpiece and processing apparatus
- Apparatus and methods for beam processing of substrates
- Purification processing apparatus, substrate processing system, and processing method
- Plasma processing apparatus, analysis apparatus, and storage medium
Description
Claims
The ornamental design for a heat radiation fin of heat insulating cylinder for manufacturing semiconductor wafers, as shown and described.
Referenced Cited
U.S. Patent Documents
| 5567986 | October 22, 1996 | Ishida |
| 5718574 | February 17, 1998 | Shimazu |
| D404373 | January 19, 1999 | Kimura |
| D404374 | January 19, 1999 | Kimura |
| 6099302 | August 8, 2000 | Hong et al. |
| 6575231 | June 10, 2003 | Wu |
| 6716027 | April 6, 2004 | Kim et al. |
| 7163393 | January 16, 2007 | Adachi |
| 7204887 | April 17, 2007 | Kawamura et al. |
| 20030000472 | January 2, 2003 | Lim et al. |
| 20040069453 | April 15, 2004 | Tanaka et al. |
Patent History
Patent number: D600660
Type: Grant
Filed: Sep 26, 2008
Date of Patent: Sep 22, 2009
Assignee: Tokyo Electron Limited (Tokyo)
Inventor: Izumi Sato (Oshu)
Primary Examiner: Selina Sikder
Attorney: Smith, Gambrell & Russell, LLP
Application Number: 29/309,702
Type: Grant
Filed: Sep 26, 2008
Date of Patent: Sep 22, 2009
Assignee: Tokyo Electron Limited (Tokyo)
Inventor: Izumi Sato (Oshu)
Primary Examiner: Selina Sikder
Attorney: Smith, Gambrell & Russell, LLP
Application Number: 29/309,702
Classifications
Current U.S. Class:
Semiconductor, Transistor Or Integrated Circuit (24) (D13/182);
Heat Sink (D13/179)