Power semiconductor device

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Description

FIG. 1 is a front, top and right side perspective view of a power semiconductor device, showing our new design;

FIG. 2 is a rear, bottom and left side perspective view thereof;

FIG. 3 is a front view thereof;

FIG. 4 is a rear view thereof;

FIG. 5 is a top view thereof;

FIG. 6 is a bottom view thereof;

FIG. 7 is a left side view thereof; and,

FIG. 8 is right side view thereof.

The broken line portion of the figure drawings is included to show portions of the article that form no part of the claimed design.

Claims

The ornamental design for a power semiconductor device, as shown and described.

Referenced Cited
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Other references
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Patent History
Patent number: D814431
Type: Grant
Filed: Nov 12, 2015
Date of Patent: Apr 3, 2018
Assignee: Mitsubishi Electric Corporation (Tokyo)
Inventors: Manabu Matsumoto (Tokyo), Yoshitaka Otsubo (Tokyo), Hiroyuki Masumoto (Tokyo)
Primary Examiner: Thomas Johannes
Assistant Examiner: Shawn T Gingrich
Application Number: 29/545,425