Power semiconductor device
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The broken line showing of the power semiconductor device is included for the purpose of illustrating portions of the power semiconductor device and forms no part of the claimed design. The dot and dashed lines mean a boundary between the claimed portion and the non-claimed portion.
Claims
The ornamental design for a power semiconductor device, as shown and described.
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Type: Grant
Filed: Mar 18, 2016
Date of Patent: Jun 27, 2017
Assignee: Mitsubishi Electric Corporation (Tokyo)
Inventors: Yukimasa Hayashida (Tokyo), Shinichi Iura (Tokyo), Hitoshi Uemura (Tokyo), Daisuke Oya (Tokyo), Kenji Hatori (Tokyo), Yasuhiro Sakai (Tokyo), Ryo Tsuda (Tokyo), Ryutaro Date (Tokyo)
Primary Examiner: Elizabeth J Oswecki
Application Number: 29/558,563