Patents Issued in October 18, 2007
  • Publication number: 20070241297
    Abstract: A bleed air valve system is provided that includes a housing, a piston, a cap, a poppet, a first guide ring, and a second guide ring. The housing includes an upper valve seat extending radially inwardly therefrom. The piston is located at least partially in the housing. The cap is coupled to the housing and includes an annular axial section located therein and a lower valve seat. The poppet is located at least partially within the housing and includes a piston coupling section, a valve body section having an upper valve seat contact surface and a lower valve seat contact surface extending radially outwardly therefrom, and a guide section extending through the cap annular axial section. One guide rings is coupled to the piston to contact the housing inner surface. Another guide ring is coupled to the poppet guide section and contacts the cap annular axial section.
    Type: Application
    Filed: April 13, 2006
    Publication date: October 18, 2007
    Inventors: Justin Tanner, Douglas Smith, David Boyer, Robert Franconi, Craig Goodman
  • Publication number: 20070241298
    Abstract: An actuator including actuator base, bobbin, and pole piece forming a pocket for a ferromagnetid armature located therein. The actuator including a radial magnet and a solenoid coil constructed and arranged to cause a linear displacement of the armature upon application of a coil drive current from a control circuit. The actuator may include a flexible membrane that partially encloses the armature to form an armature chamber filled with an incompressible fluid. In a valve design, a fluid flow is stopped by driving the membrane against a valve seat. Pressure from the controlled fluid in the conduit is transmitted through the membrane to the fluid within the armature chamber so that the armature does not need to counteract force applied to the membrane by the conduit fluid's pressure. A fluid flow is opened by driving the membrane away from the valve seat.
    Type: Application
    Filed: September 26, 2005
    Publication date: October 18, 2007
    Inventors: Kay Herbert, Natan Parsons, Xiaoxiong Mo, Fatih Guler
  • Publication number: 20070241299
    Abstract: In an electromagnetic fuel injection valve in which a valve assembly formed by integrally connecting a valve element and a movable core to each other is contained in a valve housing, and a first journal part and a second journal part are provided in the valve assembly so as to be supported slidably in the guide hole in a valve housing, the outside surface of the first journal part (21) is formed by a sliding surface (45) slidable on the inside surface of the guide hole (14) and a pair of tapered tilt surfaces (46, 47) connecting to both the front and rear sides of the sliding surface (45); at least the tilt surface (47) on the movable core side, of both the tilt surfaces (46, 47), is formed of a first tilt surface part (47a) connecting to an end part of the sliding surface (45) and a second tilt surface part (47b) connecting to the first tilt surface part (47a); and an angle that the first tilt surface part (47a) makes with a plane perpendicular to the axis line of a valve shaft part (19b) is set larger than
    Type: Application
    Filed: February 25, 2005
    Publication date: October 18, 2007
    Inventors: Akira Akabane, Kenichi Sato
  • Publication number: 20070241300
    Abstract: A slide arrangement for blocking or closing off a channel disposed between a coal pulverizer and coal dust burners, and conveying a gas having a high proportion of coal dust. The slide arrangement includes a housing disposed in the channel wall and a shroud or steel structure laterally connected to the housing. A passage for a slide plate is provided in a wall of the housing facing the shroud or steel structure. The passage can be closed off by a closure member except for a narrow gap. The closure member has a circumferential seal that rests against the rearward side of the housing wall. The closure member also has a wear plate that when the closure member is closed is flush with the inner side of the housing wall and forms a smooth passageway.
    Type: Application
    Filed: April 12, 2007
    Publication date: October 18, 2007
    Inventor: Volker von Erichsen
  • Publication number: 20070241301
    Abstract: A flexible diaphragm has a flexible central portion, a peripheral portion surrounding the central portion formed from a flexible elastomeric or plastic material, and a substantially rigid ring extending continuously through or on the peripheral portion of the flexible diaphragm. A fluoropolymer layer molded to, bonded with, or otherwise covering the central portion of the flexible diaphragm. The flexible diaphragm is adapted to be positioned between a bonnet and a body of a valve such that the peripheral portion is clamped between the bonnet and the body.
    Type: Application
    Filed: June 20, 2007
    Publication date: October 18, 2007
    Inventor: Christopher Wincek
  • Publication number: 20070241302
    Abstract: There is provided a valve assembly including: a valve attached to a cylinder head in a movable manner along its axial line direction so as to selectively fluidly connect or close between a combustion chamber and a gas line; a plate-like holding member provided at the valve in a relatively immovable manner along the axial line direction; and a coil spring externally inserted around the valve in a state where its proximal end is directly or indirectly engaged to an external surface of the cylinder head, the coil spring being configured so that its distal end has a diameter smaller than that of the proximal end, wherein the holding member has an engaging surface facing one side along the axial line direction to hold the distal end of the coil spring.
    Type: Application
    Filed: April 13, 2007
    Publication date: October 18, 2007
    Inventors: Ryuji Kishihara, Keiichiro Teratoko, Tadashi Saito, Takao Suzuki, Shinichi Tamura
  • Publication number: 20070241303
    Abstract: Thermally conductive compositions containing spherical boron nitride filler particles having an average aspect ration of less than 2.0 in a polymer matrix.
    Type: Application
    Filed: August 19, 2005
    Publication date: October 18, 2007
    Inventors: Hong Zhong, Sara Paisner, Arun Gowda, David Esler, Sandeep Tonapi, Jennifer David, Paulo Meneghetti, Laurence Maniccia, Paul Hans, Robert Fortuna, Gregory Strosaker, Gregory Shaffer, Hollister Victor, Ajit Sane
  • Publication number: 20070241304
    Abstract: The present invention provides new ferroelectric ceramic materials which can be sintered at a temperature lower than that of the conventional ferroelectric ceramic materials and upon sintering, devices formed of the new ferroelectric ceramic materials possesses excellent piezoelectric properties which are suitable for many industrial applications. The ferroelectric ceramic material includes a composition with a general formula of wPb(Ni1/3Nb2/3)O3?xPb(Zn1/3Nb2/3)O3?yPb(Mg1/3Nb2/3)O3?zPbZrO3?(1?w?x?y?z)PbTiO3, in which 0<w<1, 0<x<1, 0?y<1, 0<z<1, w+x+y+z<1, and 0.5?w+x+y. A method of preparing a ferroelectric ceramic material includes preparing MgNb2O6, ZnNb2O6 and NiNb2O6 powder precursors, mixing the precursors with PbO, TiO2 and ZrO2 to form a mixture and calcining the mixture.
    Type: Application
    Filed: April 13, 2006
    Publication date: October 18, 2007
    Inventors: Kui Yao, Bee Gan
  • Publication number: 20070241305
    Abstract: A magnetic material for magnetic refrigeration has a composition represented by (R11-yR2y)xFe100-x (R1 is at least one of element selected from Sm and Er, R2 is at least one of element selected from Ce, Pr, Nd, Tb and Dy, and x and y are numerical values satisfying 4?x?20 atomic % and 0.05?y?0.95), and includes a Th2Zn17 crystal phase, a Th2Ni17 crystal phase, or a TbCu7 crystal phase as a main phase.
    Type: Application
    Filed: March 22, 2007
    Publication date: October 18, 2007
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Shinya Sakurada, Akiko Saito, Tadahiko Kobayashi, Hideyuki Tsuji
  • Publication number: 20070241306
    Abstract: Disclosed herein are biodegradable compositions comprising 1,3-propanediol, wherein the 1,3-propanediol in said biodegradable composition has a bio-based carbon content of about 1% to 100%. In addition, it is preferred that the 1,3-propanediol be biologically-derived, and wherein upon biodegradation, the biologically-derived 1,3-propanediol contributes no anthropogenic CO2 emissions to the atmosphere.
    Type: Application
    Filed: February 12, 2007
    Publication date: October 18, 2007
    Inventors: Ann Wehner, Gyorgyi Fenyvesi, Carl Muska, Joseph DeSalvo, Melissa Joerger, Robert Miller, Irwin Palefsky, Raja Hari Poladi
  • Publication number: 20070241307
    Abstract: A crosslinkable thermal interface material is produced by combining at least one rubber compound, at least one amine resin and at least one thermally conductive filler. This interface material takes on the form of a liquid or “soft gel”. The gel state is brought about through a crosslinking reaction between the at least one rubber compound composition and the at least one amine resin composition. Once the foundation composition that comprises at least one rubber compound, at least one amine resin, and at least one thermally conductive filler has been prepared, the composition must be compared to the needs of the electronic component, vendor, or electronic product to determine if a phase change material is needed to change some of the physical properties of the composition.
    Type: Application
    Filed: May 30, 2007
    Publication date: October 18, 2007
    Inventor: My Nguyen
  • Publication number: 20070241308
    Abstract: Compositions comprising a polymer having less than 5 aliphatic carbon-carbon double bonds per 100 copolymerized monomer units, an oxidizable metal, and a compound selected from the group consisting of iron salts having ferric ammonium cations are effective oxygen-scavenging compositions. The compositions are suitable for use as components of food and pharmaceutical packaging materials.
    Type: Application
    Filed: March 26, 2007
    Publication date: October 18, 2007
    Inventor: Julius Uradnisheck
  • Publication number: 20070241309
    Abstract: Compositions comprising a polymer having less than 5 aliphatic carbon-carbon double bonds per 100 copolymerized monomer units, an oxidizable metal, and a compound selected from the group consisting of ferrous salts having an anion selected from the group consisting of ascorbate, nitrate, citrate, gluconate, lactate and mixtures thereof are effective oxygen-scavenging compositions. The compositions are suitable for use as components of food and pharmaceutical packaging materials. In addition, compositions consisting essentially of a polymer having a less than 5 aliphatic carbon-carbon double bonds per 100 copolymerized monomer units, an oxidizable metal and a ferrous sulfate salt exhibit rapid uptake of oxygen in compositions substantially free of electrolytes having halide anions.
    Type: Application
    Filed: March 26, 2007
    Publication date: October 18, 2007
    Inventor: Julius Uradnisheck
  • Publication number: 20070241310
    Abstract: Provided is a liquid crystalline compound which has a large value of refractive index anisotropy, exhibits a liquid crystal phase in a wide temperature range, and is stable under use conditions. It is a liquid crystalline compound represented by the following formula (1): wherein the symbols in the formula have the following meanings: R1, R2: each independently, an alkyl group, an alkenyl group, an alkoxy group, a halogen atom or a cyano group, wherein at least one hydrogen atom in each of the alkyl, alkenyl and alkoxy groups may be replaced with a chlorine or fluorine atom; ring A, ring B: each independently, a trans-1,4-cyclohexylene group or a 1,4-phenylene group, wherein a hydrogen atom in each of these rings may be replaced with a chlorine atom, fluorine atom or methyl group; X1, X2: each independently, a hydrogen or fluorine atom; n: 0 or 1.
    Type: Application
    Filed: June 22, 2007
    Publication date: October 18, 2007
    Applicant: ASAHI GLASS CO., LTD.
    Inventors: Yuriko KAIDA, Makoto HASEGAWA
  • Publication number: 20070241311
    Abstract: This invention provides novel cadmium tungstate scintillator materials that show improved radiation hardness. In particular, it was discovered that doping of cadmium tungstate (CdWO4) with trivalent metal ions or monovalent metal ions is particularly effective in improving radiation hardness of the scintillator material.
    Type: Application
    Filed: August 27, 2004
    Publication date: October 18, 2007
    Inventors: Shifan Cheng, Yi-Qun Li
  • Publication number: 20070241312
    Abstract: Provided are a polycarbonate resin which can solve problems present in an electrophotographic photoreceptor and an electrophotographic photoreceptor in which the above polycarbonate resin is used and which is improved in a cleaning property, a lubricity and an abrasion resistance. The polycarbonate resin comprises a repetitive unit represented by the following Formula (1), and the electrophotographic photoreceptor in which a photosensitive layer is provided on a conductive substrate contains the above polycarbonate resin in the above photosensitive layer. In the following Formula (1), R represents an alkyl group having 1 to 3 carbon atoms; n1 is an integer of 2 to 4; and n2 is an integer of 1 to 200.
    Type: Application
    Filed: May 19, 2005
    Publication date: October 18, 2007
    Inventor: Takaaki Hikosaka
  • Publication number: 20070241313
    Abstract: A polarizing plastic lens comprising a polarizing film with low tendency to detachment from an optical resin layer. There is provided polarizing plastic lens comprising polarizing film constituted of a polyvinyl alcohol resin. Two optical resin layers of different thicknesses may be disposed on both surfaces of the polarizing film. The optical resin layers are formed by polymerizing a polymerization raw material composition in contact with the polarizing film. The polymerization raw material composition contains as one main component an isocyanated or isothiocyanated compound. The iscocyanate or isothiocyanate functional group reacts with the hydroxyl of polyvinyl alcohol resin of polarizing film to thereby form an urethane bond or thiourethane bond, so that the optical resin layers are strongly unified with the polarizing film.
    Type: Application
    Filed: February 18, 2005
    Publication date: October 18, 2007
    Inventor: Sumio Kato
  • Publication number: 20070241314
    Abstract: A damper has a body, a spindle and multiple beads. The body has a base with a through hole, a top cap with a through hole and a cavity defined in the body. The spindle is mounted inside the body and has a spindle body and a transverse post formed on the spindle body. The multiple beads are received inside the cavity in the body and abut the transverse post. The damper provides a friction by the transverse post abutting and moving over the beads, therefore, when the damper is mounted on a retractable device, the retracting rate of the retractable device may be adjusted conveniently by changing the amount of the beads.
    Type: Application
    Filed: April 17, 2006
    Publication date: October 18, 2007
    Inventor: Robert Tsai
  • Publication number: 20070241315
    Abstract: A rail clip for connecting a horizontal fence rail to a vertical fence post. The rail clip comprises a housing that is slidably engaged with a mounting base secured to the fence post. The clip further includes a L-shaped mounting bracket, a first leg of which is inserted into the housing between the mounting base and the rail clip, and a second leg which abuts the underside of the housing. An end of the rail is inserted into a chamber formed in the housing and a fastener is used to secure the second leg of the mounting bracket, the housing and the end of the rail together. The mounting bracket aids in preventing the rail and rail clip from dislodging from each other and from the fence post when a lateral force is applied to the rail.
    Type: Application
    Filed: April 18, 2006
    Publication date: October 18, 2007
    Inventor: Robert Platt
  • Publication number: 20070241316
    Abstract: A rail clip assembly for connecting a horizontal fence rail to a vertical fence post. The rail clip assembly comprises a housing that is slidably engaged with at least one mounting spacer and a first leg of an L-shaped mounting bracket. The second leg of the mounting bracket abuts the underside of the housing and supports the same. An end of the rail is inserted into a chamber formed in the housing and a fastener is used to secure the second leg of the mounting bracket, the housing and the end of the rail together. The rail clip assembly aids in preventing the rail from disengaging from the housing when a lateral force is applied to the rail.
    Type: Application
    Filed: July 12, 2006
    Publication date: October 18, 2007
    Inventor: Robert E. Platt
  • Publication number: 20070241317
    Abstract: An apparatus for use in clamping a structure at its edge, the structure having opposed surfaces, the apparatus comprising a stanchion, a first clamping assembly attached to the stanchion and a second clamping assembly selectively slidably moveable longitudinally along the stanchion, the second clamping assembly including a support plate extending laterally outward in a direction away from the stanchion, the support plate being positioned closely adjacent one of the opposed surfaces of the structure when the structure is clamped between the first and second clamping assemblies.
    Type: Application
    Filed: May 15, 2007
    Publication date: October 18, 2007
    Inventor: Rainer Kuenzel
  • Publication number: 20070241318
    Abstract: A fencing system includes a post mount mountable on a foundation and having a vertically extending outer surface. A post insert sits atop the post mount and has an outer surface disposed outwardly of the post mount outer surface. The post insert has an upper sidewall which extends upwardly of the post mount and defines an upwardly opening cavity. A post includes a sidewall having an inner surface defining a cavity therein in which the post mount and post insert are slidably received with the outer surface of the post insert preferably closely adjacent the post inner surface. A rail is mounted via a rail mounting bracket to the post insert. Threaded fasteners extend from the rail mounting bracket through respective holes in the post and are threaded into mounting holes in the post insert to provide a strong connection for the mounting of the rail mounting bracket and rail.
    Type: Application
    Filed: June 15, 2007
    Publication date: October 18, 2007
    Inventor: Robert Platt
  • Publication number: 20070241319
    Abstract: Disclosed is a phase change memory device including: a semiconductor substrate formed with a first insulating interlayer having a first contact hole; a contact plug formed in such a manner so as to be recessed within the first contact hole; a catalyst layer formed on the contact plug in such a manner so as to fill the first contact hole; a second insulating interlayer formed on the first insulating interlayer including the catalyst layer having a second contact hole through which the catalyst layer is exposed; a carbon nano tube lower electrode formed within the second contact hole in such a manner so as to come in contact with the catalyst layer; a phase change layer formed on the carbon nano tube lower electrode and a second insulating interlayer portion around the second contact hole; and an upper electrode formed on the phase change layer.
    Type: Application
    Filed: December 29, 2006
    Publication date: October 18, 2007
    Inventor: Heon Yong Chang
  • Publication number: 20070241320
    Abstract: A thin film electron source comprising a substrate, a lower electrode formed on one main face of said substrate, an insulation layer formed in contact with said lower electrode and an upper electrode formed in contact with said insulation layer. The upper electrode comprises a first under-layer, a second under-layer, an intermediate layer and a surface layer laminated from the insulation layer side. A main material of the first under-layer is IrO2 or RuO2; a main material of the second under-layer is Ir or Ru, and a main material of the surface layer is a member selected from the group consisting of Au and Ag.
    Type: Application
    Filed: April 3, 2007
    Publication date: October 18, 2007
    Inventor: Tomio Iwasaki
  • Publication number: 20070241321
    Abstract: A light-emitting diode (LED) structure including a substrate, a first type doped semiconductor layer, an active layer, a second type doped semiconductor layer and a transparent conductive layer is provided. The first type doped semiconductor layer is located on the substrate. The active layer is located on the first type doped semiconductor layer. The second type doped semiconductor layer is located on the active layer, and the transparent conductive layer is disposed on the second type doped semiconductor layer. A portion of the transparent conductive layer and the second type doped semiconductor layer underneath the transparent conductive layer are removed by etching, so as to make the transparent conductive layer to be a mesh structure and to make a surface of the second type doped semiconductor layer to be a rough surface. The occurrence of total internal reflection inside the LED is reduced.
    Type: Application
    Filed: October 13, 2006
    Publication date: October 18, 2007
    Applicant: National Central University
    Inventors: Cheng-Huang Kuo, Gou-Chung Chi, Chao-Min Chen
  • Publication number: 20070241322
    Abstract: An InAsP active region for a long wavelength light emitting device and a method for growing the same are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium arsenide phosphide (InAsP) film, forming a quantum well layer of InAsP, and forming a barrier layer adjacent the quantum well layer, where the quantum well layer and the barrier layer are formed at a temperature of less than 520 degrees C. Forming the quantum well layer and the barrier layer at a temperature of less than 520 degrees C. results in fewer dislocations by suppressing relaxation of the layers. A long wavelength active region including InAsP quantum well layers and InGaP barrier layers is also disclosed.
    Type: Application
    Filed: June 20, 2007
    Publication date: October 18, 2007
    Inventors: David Bour, Michael Tan, William Perez
  • Publication number: 20070241323
    Abstract: Edge-angle-optimized solid phase epitaxy is described as a method for forming hybrid orientation substrates comprising changed-orientation Si device regions free of the trench-edge defects typically seen when trench-isolated regions of Si are recrystallized to the orientation of an underlying single-crystal Si template after an amorphization step. For the case of amorphized Si regions recrystallizing to (100) surface orientation, the trench-edge-defect-free recrystallization of edge-angle-optimized solid phase epitaxy may be achieved in rectilinear Si device regions whose edges align with the (100) crystal's in-plane <100> directions.
    Type: Application
    Filed: April 18, 2006
    Publication date: October 18, 2007
    Applicant: International Business Machines Corporation
    Inventors: Katherine Saenger, Chun-yung Sung, Haizhou Yin
  • Publication number: 20070241324
    Abstract: A functional molecular element exhibiting its function under the operation of an electrical field is provided. A compound is used in which a pendant molecule, formed by 4-pentyl-4?-cyanobiphenyl, exhibiting positive dielectric constant anisotropy or a dipole moment along the direction of the long axis of the molecule, is covalently bonded to an electrically conductive linear or film-shaped principal-axis molecule having a conjugated system. The pendant molecule is changed in its orientation on application of an electrical field to change the conformation to switch the electrical conductivity of the electrically conductive principal-axis molecule.
    Type: Application
    Filed: June 24, 2005
    Publication date: October 18, 2007
    Applicants: SONY CORPORATION, SONY DEUTSCHLAND G.m.b.H
    Inventors: Eriko Matsui, Nobuyuki Matsuzawa, Akio Yasuda, Oliver Harnack
  • Publication number: 20070241325
    Abstract: A Schottky gate field effect transistor with high speed and simple structure is provided. The Schottky gate field effect transistor includes: a source, a channel and a drain formed by one organic conductive material, in which the source, channel and drain are formed in a continuous structure within an organic conductor; a gate electrode functioning as a metal gate on one surface of the organic conductor; a Schottky barrier formed by contact between the gate electrode and the organic conductor, in which the region overlapping with the Schottky contact is the channel region.
    Type: Application
    Filed: June 9, 2005
    Publication date: October 18, 2007
    Applicant: Yamanashi University
    Inventor: Hidenori Okuzaki
  • Publication number: 20070241326
    Abstract: An organic light emitting device and manufacturing method thereof includes a substrate; a first electrode formed on the substrate; a second electrode formed on the first electrode; an light emitting member interposed between the first electrode and the second electrode; and a photonic crystal member disposed in proximity to the substrate.
    Type: Application
    Filed: April 18, 2007
    Publication date: October 18, 2007
    Applicants: SAMSUNG ELECTRONICS CO., LTD., Industry-University Cooperation Foundation, Hanyang University
    Inventors: Tae-Whan Kim, Kyoung-Phil Kim, Dong-Chul Choo, Sang-Min Han, Dae-Uk Lee
  • Publication number: 20070241327
    Abstract: Provided is a method of fabricating a ZnO thin film structure and a ZnO thin film transistor (TFT), and a ZnO thin film structure and a ZnO thin film transistor. The method of fabricating a ZnO thin film structure may include forming a ZnO thin film on a substrate in an oxygen atmosphere, forming oxygen diffusion layers of a metal having an affinity for oxygen on the ZnO thin film and heating the ZnO thin film and the oxygen diffusion layers to diffuse oxygen of the ZnO thin film into the oxygen diffusion layers.
    Type: Application
    Filed: February 5, 2007
    Publication date: October 18, 2007
    Inventors: Chang-Jung Kim, I-Hun Song, Dong-Hun Kang, Young-Soo Park, Eun-Ha Lee
  • Publication number: 20070241328
    Abstract: A power semiconductor component and process for producing power semiconductor components is disclosed. In one embodiment, a power semiconductor component is produced, including applying a semiconductor ship to a substrate using a fluorescent marker substance.
    Type: Application
    Filed: April 12, 2007
    Publication date: October 18, 2007
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Stefan Landau, Joachim Mahler
  • Publication number: 20070241329
    Abstract: A semiconductor integrated circuit includes a first conductor provided in a first region on a substrate and a second conductor provided in a second region on the substrate. The second region is a region enclosing the first region. A minimum design dimension in linewidth of the first conductor is smaller than a minimum design dimension in linewidth of the second conductor.
    Type: Application
    Filed: April 13, 2007
    Publication date: October 18, 2007
    Applicant: NEC ELECTRONICS CORPORATION
    Inventor: Yoshihisa Matsubara
  • Publication number: 20070241330
    Abstract: In a semiconductor integrated circuit device, testing pads (209b) using a conductive layer, such as relocation wiring layers (205) are provided just above or in the neighborhood of terminals like bonding pads (202b) used only for probe inspection at which bump electrodes (208) are not provided. Similar testing pads may be provided even with respect to terminals like bonding pads provided with bump electrodes. A probe test is executed by using these testing pads or under the combined use of under bump metallurgies antecedent to the formation of the bump electrodes together with the testing pads. According to the above, bump electrodes for pads dedicated for probe testing may not be added owing to the use of the testing pads. Further, the use of testing pads provided in the neighborhood of the terminals like the bonding pads and smaller in size than the under bump metallurgies enables a probe test to be executed after a relocation wiring process.
    Type: Application
    Filed: June 13, 2007
    Publication date: October 18, 2007
    Inventors: Asao Nishimura, Syouji Syukuri, Gorou Kitsukawa, Toshio Miyamoto
  • Publication number: 20070241331
    Abstract: Electroluminescent devices and methods for fabricating the same are provided. An exemplary embodiment of an electroluminescent device comprises a substrate. A thin film transistor (TFT) is formed on the substrate. An insulating layer is formed to overlie the TFT and the substrate. An opening is formed in the insulating layer, exposing a source/drain region of the TFT. A conductive layer is formed over a portion of the insulating layer, filling the opening. A protection layer is formed overlying a portion of the insulating layer and the conductive layer. A light-emitting layer is formed overlying a portion of the conductive layer not covered by the protection layer. A top electrode is formed to overlie the light-emitting layer.
    Type: Application
    Filed: November 30, 2006
    Publication date: October 18, 2007
    Applicant: AU OPTRONICS CORP.
    Inventors: Hsin-Hung Lee, Yun-Sheng Chen, Ming-Chang Shih
  • Publication number: 20070241332
    Abstract: A liquid crystal display device having a liquid crystal display panel includes a first substrate, a second substrate, and liquid crystal interposed between the first and second substrates. The first substrate includes an active element, a first insulating film formed on the active element, a plurality of first electrodes disposed on the first insulating film, a second insulating film disposed on the first electrodes, and a pixel electrode disposed on the second insulating film. The pixel electrode is electrically coupled to the active element via a portion defining a contact hole formed in a portion defining a clearance between the plurality of first electrodes.
    Type: Application
    Filed: April 5, 2007
    Publication date: October 18, 2007
    Inventors: Takahiro Ochiai, Takayuki Nakao, Toshio Miyazawa, Masahiro Maki, Tohru Sasaki
  • Publication number: 20070241333
    Abstract: An amorphous silicon thin film transistor, an organic light-emitting display (OLED) device including the same and method thereof are provided. The example amorphous silicon thin film transistor may include an amorphous silicon thin film transistor portion including a gate electrode, a gate insulating layer, an amorphous silicon layer, and source/drain electrodes and a heat generating portion generating heat and applying the heat to the amorphous silicon layer to reduce a threshold voltage of the amorphous silicon thin film transistor portion. The example method may include applying heat to an amorphous silicon layer if a threshold voltage of an amorphous silicon thin film transistor rises above a default level, the amorphous silicon thin film transistor including the amorphous silicon layer, the applied heat configured to reset the threshold voltage to the default level.
    Type: Application
    Filed: February 7, 2007
    Publication date: October 18, 2007
    Inventors: Jae-Chul Park, Young-Soo Park, Young-Kwan Cha
  • Publication number: 20070241334
    Abstract: A thin film transistor according to an embodiment of the present invention includes: a semiconductor layer formed on a substrate and having a first diffusion region, a channel region, and a second diffusion region; a gate electrode opposite to the semiconductor layer across a gate insulating film formed on the semiconductor layer; and a connecting conductive film formed on the semiconductor layer opposite to the gate insulating film and extending from the first diffusion region up to a predetermined position in the channel region to electrically connect between the first diffusion region and the channel region. The transistor further includes a laying conductive layer formed on the semiconductor layer opposite to the gate insulating film and electrically connected with the second diffusion region.
    Type: Application
    Filed: April 11, 2007
    Publication date: October 18, 2007
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventor: Hitoshi NAGATA
  • Publication number: 20070241335
    Abstract: Methods of fabricating a semiconductor integrated circuit having thin film transistors using an SEG technique are provided. The methods include forming an inter-layer insulating layer on a single-crystalline semiconductor substrate. A single-crystalline semiconductor plug extends through the inter-layer insulating layer, and a single-crystalline epitaxial semiconductor pattern is in contact with the single-crystalline semiconductor plug on the inter-layer insulating layer. The single-crystalline epitaxial semiconductor pattern is at least partially planarized to form a semiconductor body layer on the inter-layer insulating layer, and the semiconductor body layer is patterned to form a semiconductor body. As a result, the semiconductor body includes at least a portion of the single-crystalline epitaxial semiconductor pattern. Thus, the semiconductor body has an excellent single-crystalline structure. Semiconductor integrated circuits fabricated using the methods are also provided.
    Type: Application
    Filed: June 21, 2007
    Publication date: October 18, 2007
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Kun-Ho KWAK, Jae-Hoon JANG, Soon-Moon JUNG, Won-Seok CHO, Hoon LIM, Sung-Jin KIM, Byung-Jun HWANG, Jong-Hyuk KIM
  • Publication number: 20070241336
    Abstract: In first and second gate electrodes constituting a gate electrode, the gate length of the second gate electrode is set shorter than the gate length of the first gate electrode and short enough to produce the short channel effect. The threshold voltage of a second transistor corresponding to the second gate electrode can thereby be made lower than the threshold voltage of a first transistor corresponding to the first gate electrode. When the same voltage is applied to the first and second gate electrodes, an electric field concentration at the channel edge on the drain side is reduced. This in result reduces the channel length modulation effect.
    Type: Application
    Filed: April 12, 2007
    Publication date: October 18, 2007
    Applicant: MITSUBISHI ELECTRIC CORPORATION
    Inventors: Hidetada TOKIOKA, Naoki Nakagawa, Masafumi Agari
  • Publication number: 20070241337
    Abstract: In a nitride semiconductor device according to one embodiment of the invention, a p-type gallium nitride (GaN) layer electrically connected to a source electrode and extending and projecting to a drain electrode side with respect to a gate electrode is formed on an undoped or n-type aluminum gallium nitride (AlGaN) layer serving as a barrier layer.
    Type: Application
    Filed: June 21, 2007
    Publication date: October 18, 2007
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Wataru Saito, Ichiro Omura
  • Publication number: 20070241338
    Abstract: A SiC semiconductor device includes: a SiC substrate having a drain layer, a drift layer and a source layer stacked in this order; multiple trenches penetrating the source layer and reaching the drift layer; a gate layer on a sidewall of each trench; an insulation film on the sidewall of each trench covering the gate layer; a source electrode on the source layer; and a diode portion in or under the trench contacting the drift layer to provide a diode. The drift layer between the gate layer on the sidewalls of adjacent two trenches provides a channel region. The diode portion is coupled with the source electrode, and insulated from the gate layer with the insulation film.
    Type: Application
    Filed: April 10, 2007
    Publication date: October 18, 2007
    Applicants: DENSO CORPORATION, HITACHI, LTD.
    Inventors: Tsuyoshi Yamamoto, Toshio Sakakibara, Hiroki Nakamura, Toshiyuki Morishita, Takasumi Ooyanagi, Atsuo Watanabe
  • Publication number: 20070241339
    Abstract: A light-emitting diode (LED) structure providing an improved heat transfer path with a lower thermal resistance than conventional LEDs without significantly deviating from the conventional dimensions is described. For some embodiments, a light-emitting diode structure is illustrated that includes a lead frame that is substantially exposed for low thermal resistance by positioning it on the bottom of the light-emitting diode structure. An LED semiconductor chip is electrically and thermally conductively connected to at least one lead of the lead frame for external connection. In some embodiments, a lens or transparent cover plate may cover the LED structure to alter the properties of the emitted light.
    Type: Application
    Filed: April 12, 2006
    Publication date: October 18, 2007
    Inventor: JUI-KANG YEN
  • Publication number: 20070241340
    Abstract: A display device includes one or more light emitting diodes (LEDs) configured to emit light and a spatial light modulator comprising one or more tiltable micro mirrors each configured to receive the light emitted from the one or more LEDs and reflect the emitted light in two or more directions.
    Type: Application
    Filed: April 17, 2006
    Publication date: October 18, 2007
    Inventor: Shaoher Pan
  • Publication number: 20070241341
    Abstract: A light reflecting device includes: a substrate having front and back surfaces; a light absorbing layer formed on a selected one of the front and back surfaces of the substrate; a buffer layer formed on the light absorbing layer when the light absorbing layer is formed on the front surface of the substrate and on the front surface of the substrate when the light absorbing layer is formed on the back surface of the substrate; and a light reflecting layer formed on the buffer layer. The light absorbing layer has an extinction coefficient greater than 0.15 and a layer thickness ranging from 10 to 500 nm.
    Type: Application
    Filed: January 29, 2007
    Publication date: October 18, 2007
    Applicant: ASIA OPTICAL CO., INC.
    Inventor: Yan-Hong LIU
  • Publication number: 20070241342
    Abstract: In at least one aspect, a semiconductor light emitting device may include a first lead, a second lead provided being apart from the first lead, a semiconductor light emitting element provided on the first lead, a wiring electrically connecting the semiconductor light emitting element and the second lead, a first resin being optically transparent to light from the semiconductor light emitting element, the first resin covering the semiconductor light emitting element, and a second resin provided on the first resin, the first lead and the second lead, and being optically transparent to light from the semiconductor light emitting element, wherein a part of the first lead which is covered with the second resin is symmetric with respect to a vertical line passing through the semiconductor light emitting element in a cross-sectional view cut along a plane, the plane passing the semiconductor light emitting element and being parallel with a direction to which the first lead is extended.
    Type: Application
    Filed: April 6, 2007
    Publication date: October 18, 2007
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Kazuhiro INOUE, Haruhiko OKAZAKI, Hiroyuki NAKASHIMA
  • Publication number: 20070241343
    Abstract: A photo coupler includes a semiconductor laser, a semiconductor light-receiver, a resin protector, a reflective film, a light pipe, and electrodes. The light pipe is made of resin, has a rectangular parallelepiped shape, and is provided so as to surround an outer circumferential portion of the semiconductor light-receiver. On a center portion of an upper surface of the light pipe, a recessed portion shaped in a frustum of quadrangular pyramid tapered toward the semiconductor light-receiver is formed. The reflective film is shaped in a frustum surface of pyramid tapered toward the semiconductor light-receiver, and is formed on side surfaces of the recessed portion.
    Type: Application
    Filed: March 22, 2007
    Publication date: October 18, 2007
    Inventors: Tomohiro Yamazaki, Jun Ichihara
  • Publication number: 20070241344
    Abstract: For a semiconductor light emitting device using GaInNAs as an active layer, since GaInNAs includes N, the critical thickness is reduced and it is difficult to lengthen the wavelength of a laser beam. A semiconductor light emitting device is prepared, which has an active layer comprising a quantum well layer formed by successively stacking a GaInNAs layer and a GaInAs layer and GaAs barrier layers stacked on both sides of the quantum well layer. The quantum level of the conduction band is present above the conduction band edge of the GaInAs layer.
    Type: Application
    Filed: April 10, 2007
    Publication date: October 18, 2007
    Inventors: Koichiro Adachi, Kouji Nakahara, Jun-ichi Kasai, Takeshi Kitatani
  • Publication number: 20070241345
    Abstract: The present invention provides a semiconductor light emitting device which includes a multi-layer structure. Additionally, an electrode is disposed on a first surface of the multi-layer structure. Furthermore, the electrode includes a plurality of bonding pads.
    Type: Application
    Filed: April 13, 2007
    Publication date: October 18, 2007
    Inventor: Kuo-Hsin Huang
  • Publication number: 20070241346
    Abstract: A light emitting device of the present invention includes: a substrate including wire patterns separated from each other on a basic material and a runner section to which sealing resin is poured, which runner section is a space between the wire patterns; a light emitting element die-bonded on the substrate; and a resin section in which the light emitting element is sealed using the sealing resin poured via the runner section.
    Type: Application
    Filed: April 11, 2007
    Publication date: October 18, 2007
    Applicant: SHARP KABUSHIKI KAISHA
    Inventors: Masahiro Konishi, Yuhsuke Fujita, Toshiyuki Takada