Abstract: An electrolyte for anodizing magnesium products, includes a base solution, a main blackening agent, an auxiliary blackening agent, and a complexing agent. The base solution includes 2 to 25 g/l of alkali, 1 to 30 g/l of fluoride, and 1 to 35 g/l of silicate. The main blackening agent mainly includes cupric salt, concentration of the cupric salt is from 0.3 to 9 grams per liter (g/l). The auxiliary blackening agent mainly includes oxysalt, concentration of the oxysalt is from 0.1 to 8 g/l. Concentration of the complexing agent is from 0.5 to 20 g/l.

Abstract: Photochromic h-annellated benzo[f]chromene compounds, especially photochromic compounds derived from benzo[f]chromenes, which compounds have particular long wavelength absorption maxima in their closed form and exhibit good performance in the open, colored form, so that good compatibility is achieved with indenonaphthopyrans which are diffused in phototropic glasses used in phototropic glass applications, and the use of such photochromic h-annellated benzo[f]chromene compounds in photochromic synthetic resin articles, particularly ophthalmic lenses.

Abstract: The invention relates to a flame retarding composition that comprises a mixture of a metal hydroxide component and a clay component, the mixture being present in the form of dried particles with monomodal particle size distribution.

Abstract: A life saving implement includes a prime motor assembly, a winding drum installing in the prime motor assembly to wind a wire rope, a braking drum installed on a side of the winding drum to control an RPM of the winding drum, a braking unit installed on a lower portion of the braking drum to control an RPM of the braking drum, a speed reduction unit installed on an upper portion of the braking drum to gradually reduce the RPM of the winding drum until the winding drum stops, and a passenger vehicle moving by the rotations of the winding drum and the braking drum.

Abstract: A modular lift assembly configured for attachment between two substantially parallel support beams includes a chassis, at least one lift component attached to the chassis, a telescoping stiffener, and at least one attachment assembly. The chassis has a plurality of grooves formed in one surface thereof. The telescoping stiffener is disposed in at least one of the grooves and engages facing surfaces of adjacent parallel support beams. The attachment assembly is disposed in another of the grooves formed in the chassis for engaging at least one of the adjacent support beams.

Abstract: Fencing system including elongate posts adapted to be secured to the ground, fence sections each arranged between an adjacent pair of posts and including downward-facing mounting pins, and post clips arranged on the posts. Each post clip includes a tubular mounting collar slidable along and rotatable relative to the posts, a locking mechanism for locking the mounting collar in a fixed vertical position and a pin-receiving ring defining an aperture for receiving one of the mounting pins to enable engagement of the mounting pins with the post clips and thus engagement of the fence sections with the posts. Assembly of the fencing system includes positioning the post clips on the posts, securing the posts to the ground, and placing the mounting pins through the pin-receiving rings of the post clips once the posts are secured to the ground and the post clips are set at the desired vertical location.

Abstract: An agricultural fencing system employing corner posts and center posts of pre-cast concrete reinforced by rebar. The center posts have insulative tubes or conduits passing therethrough for the receipt of electrically conductive wire from a power source or transformer. The wire is wrapped about the exterior of the corner posts for change of direction.

Abstract: A universal attachment means and method for attaching a baluster or post between a base of a stairway and a railing above the stairs as well as at landings or balconies. The attachment means includes a ball and socket connection assembly that can be attached to either end of a baluster or post and then used to attach the baluster or post to the base or rail of the stairway. The attachment means permits ease of attachment of balusters or posts regardless of the slope of the stair and rail and regardless of any angular slope of a rail as in a circular stair rail. The attachment means eliminates the tedious alignment and drilling of vertical holes into the underside of a rail as needed in many prior art systems.

Abstract: A memory device. The device includes first and second electrode members, in spaced relation on a substrate. A phase change element lies in electrical contact with the first and second electrode elements and spans the space separating them. The phase change element includes two segments, each in contact with one of the electrode elements. The segments are fused together at a location between the two electrodes such that the fused area has a smaller cross-sectional area than does the remainder of the phase change element. The electrodes, the substrate and the phase change element define a chamber containing a vacuum.

Abstract: Provided are embodiments of a light emitting device and a method of manufacturing the same. The light emitting device can include a substrate having a nano-sized structure and a semiconductor light emitting structure on the substrate. The method of manufacturing the light emitting device can include forming a nano-sized structure on the surface of the substrate and forming a first conduction type semiconductor layer, an active layer and a second conduction type semiconductor layer on the substrate.

Abstract: A quantum well intermixing (QWI) technique for modifying an energy bandgap during the formation of optical semi-conductor devices enables spatial control of the QWI process so as to achieve differing bandgap shifts across a wafer, device or substrate surface.

Abstract: The invention concerns a micro-electronic device comprising a substrate, a first insulating zone and a second insulating zone laying on said substrate, a first active zone comprising at least one layer made of a first semi-conductor crystalline material, resting on said first insulating zone which insulates it from the substrate, at least one second active zone comprising at least one layer in a second semi-conductor crystalline material, laying on said second insulating zone which insulates it from the substrate, said first semi-conductor crystalline material having a different composition from that of the second semi-conductor crystalline material and/or different crystalline orientation from that of the second semi-conductor crystalline material and/or mechanical strains from that of the second semi-conductor crystalline material.

Abstract: Embodiments of the present invention are generally directed to a method for disposing nanoparticles on a substrate. In one embodiment, a substrate having a plurality of recesses is provided. In this embodiment, a plurality of nanoparticles is also provided. The nanoparticles include a catalyst material coupled to one or more ligands, and these nanoparticles are disposed within respective recesses of the substrate. In some embodiments, the substrate is processed to form nanostructures, such as nanotubes or nanowires, within the recesses. Devices and systems having such nanostructures are also disclosed.

Abstract: The invention relates to novel polymerisable thieno[3,2-b]thiophenes, to their use as semiconductors or charge transport materials, in optical, electro-optical or electronic devices like for example liquid, crystal displays, optical films, organic field effect transistors (FET or OFET) for thin film transistor liquid crystal displays and integrated circuit devices such as RFID tags, electroluminescent devices in flat panel displays, and in photovoltaic and sensor devices, and to field effect transistors, light emitting devices or ID tags comprising the novel compounds.

Abstract: An organic light emitting device consists of a layered structure including a top multilayer stack, a bottom multilayer stack, a cavity layer between the top multilayer stack and the bottom multilayer stack, and an organic light emitting region within the cavity layer. The layered structure is constructed such that the product of phase factors ?1 and ?2 is.

Abstract: An electronic circuit with repetitive patterns formed by shadow mask vapor deposition includes a repetitive pattern of electronic circuit elements formed on a substrate. Each electronic circuit element includes the following elements in the desired order of deposition: a first semiconductor segment, a second semiconductor segment, a first metal segment, a second metal segment, a third metal segment, a fourth metal segment, a fifth metal segment, a sixth metal segment, a first insulator segment, a second insulator segment, a third insulator segment, a seventh metal segment, an eighth metal segment, a ninth metal segment and a tenth metal segment. All of the above segments may be deposited via a shadow mask deposition process. The electronic circuit element may be an element of an array of like electronic circuit elements.

Abstract: A TFT LCD array substrate and a manufacturing method thereof. The manufacturing method includes the steps of: forming a thin film transistor on a substrate to form a gate line and a gate electrode connected with the gate line on the substrate; forming a gate insulating layer and a semiconductor layer on the gate electrode; forming an ohmic contact layer on the semiconductor layer; forming a transparent pixel electrode layer and a source/drain electrode metal layer in sequence on the resultant substrate, wherein the transparent pixel electrode layer is electrically insulated from the gate line and the gate electrode, and the transparent pixel electrode layer forms an ohmic contact with two sides of the semiconductor layer via the ohmic contact layer; and performing masking and etching with a gray tone mask with respect to the resultant substrate to form a transparent pixel electrode, a source/drain electrode and a data line simultaneously.

Abstract: A semiconductor device comprising a high-dielectric film in a part of a gate insulation film is provided by a more simplified method. In a semiconductor device having a first region and a second region, a first gate electrode, a second gate electrode and a high-dielectric gate insulation film are formed in the first region (core part). The first gate electrode and the second gate electrode have different composition ratios. The first gate electrode and the second gate electrode are formed on the high-dielectric gate insulation film. Furthermore, a third gate electrode and a fourth gate electrode and a SiON film or SiO2 film are formed in the second region (I/O part). Impurity elements doped in the third gate electrode and the fourth gate electrode are different in kind and/or concentration. In addition, the third gate electrode and the fourth gate electrode are formed on the SiON film or SiO2 film.

Abstract: A thin film semiconductor device is provided which includes an insulating substrate, a Si thin film formed over the insulating substrate, and a transistor with the Si thin film as a channel thereof. The Si thin film includes a polycrystal where a plurality of narrow, rectangular crystal grains are arranged. A surface of the polycrystal is flat at grain boundaries thereof. Also, an average film thickness of the boundaries of crystals of the Si thin film ranges from 90 to 100% of an intra-grain average film thickness.

Abstract: A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.

Abstract: A multidirectional light scattering LED and a manufacturing method thereof are disclosed. A metal oxide is irregular disposed over a second semiconductor layer and then is removed by etching. Part of the second semiconductor layer, part of a light-emitting layer or part of the first semiconductor layer is also removed so as to form a scattering layer. A transparent conductive layer is arranged over the second semiconductor layer while further a second electrode is disposed over the transparent conductive layer. A first electrode is installed on the scattering layer. Thus light output from the LED is scattered in multi-directions.

Abstract: A long life light-emitting diode (LED) module is provided. The LED module includes: a light-emitting chip; a phosphor layer formed of phosphor materials that transform light emitted from the light-emitting chip into light having a longer wavelength than the light emitted from the light-emitting chip; a capping layer that is formed on the light-emitting chip and protects the light-emitting chip; and a heat spreading plate that is disposed between the capping layer and the phosphor layer that dissipates heat generated in the light-emitting chip and the phosphor layer.

Abstract: The invention relates to a light source comprising at least one p-n-junction which is formed by the arrangement of two suitable semi-conductor materials for the induced emission of light. Said light source is embodied and improved in such a manner that at least one of the semi-conductor materials is in the form of particles, such that a particularly large amount of light can be produced. The invention further relates to a method for producing said type of light source.

Abstract: An LED package improved in efficiency and brightness. In the package, a body has a mounting part thereon. A plurality of light emitting diode chips are mounted on the mounting part. The mounting part has a cross-section upwardly convexed with a non-planar top portion so that at least two adjacent ones of the light emitting diode chips have opposing side surfaces facing a different direction from each other.

Abstract: A high luminance and high output LED package using an LED as a light source and a fabrication method thereof. The LED package includes an Al substrate with a recessed multi-stepped reflecting surface formed therein and a light source composed of LEDs mounted on the reflecting surface and electrically connected to patterned electrodes. The LED package also includes anodized insulation layers formed between the patterned electrodes and the substrate, and an encapsulant covering over the light source of the substrate. The LED package further includes an Al heat radiator formed under the LEDs to enhance heat radiation capacity. According to the present invention, the substrate is made of Al material and anodized to form insulation layers thereon, allowing superior heat radiation effect of the LED, thereby significantly increasing the lifetime and light emission efficiency of the LED package.

Abstract: One or more circuit elements such as silicon diodes, resistors, capacitors, and inductors are disposed between the semiconductor structure of a semiconductor light emitting device and the connection layers used to connect the device to an external structure. In some embodiments, the n-contacts to the semiconductor structure are distributed across multiple vias, which are isolated from the p-contacts by one or more dielectric layers. The circuit elements are formed in the contacts-dielectric layers-connection layers stack.

Abstract: A light source that is both thermally and spatially efficient can be achieved by attaching a light source, such as an LED chip, to a flexible circuit and positioning a light conductive material around the light source. For one embodiment, a cavity is created around the light source such that the light conductive material, for example, clear silicone, can be positioned within the cavity. In one embodiment, the cavity is created by a housing, such as a premolded plastic housing, secured to the flexible circuit. In one embodiment, a lens can be secured to the device to form the light.

Abstract: A composite semiconductor device includes a plurality of semiconductor thin films and a substrate on which the semiconductor thin films are attached. Each semiconductor thin film includes a plurality of semiconductor elements. Each semiconductor element includes a first contact region and a second contact region. The first contact region is connected to a first electrode, and the second contact region is connected to a second electrode. The semiconductor thin film is attached to a substrate such that the plurality of semiconductor elements are aligned in a row, and such that the first contact region and the second contact region are in the row of light emitting elements.

Abstract: In a p-n junction-type compound semiconductor light-emitting diode provided on a crystal substrate with at least an n-type active layer formed of a Group m nitride semiconductor as a light emitting layer, and with a Group m nitride semiconductor layer containing a p-type impurity on the n-type active layer, the diode has a boron phosphide-based Group III-V compound semiconductor layer possessing a band gap exceeding that of the Group m nitride semiconductor forming the n-type active layer at room temperature and exhibiting a p-type electroconductivity in an undoped state deposited on the p-type impurity-containing Group III nitride semiconductor layer, and has an ohmic positive electrode joined to a surface of the boron phosphide-based Group III-V compound semiconductor layer.

Abstract: A nitride semiconductor light-emitting device including a coating film and a reflectance control film successively formed on a light-emitting portion, in which the light-emitting portion is formed of a nitride semiconductor, the coating film is formed of an aluminum oxynitride film or an aluminum nitride film, and the reflectance control film is formed of an oxide film, as well as a method of manufacturing the nitride semiconductor light-emitting device are provided.

Abstract: A semiconductor component having a semiconductor body, the semiconductor body comprising a curved mirror (3), which is monolithically integrated in the semiconductor body. A method for curving a semiconductor body is also disclosed.

Abstract: A light emitting diode (LED) having enhanced integrity. The light emitting source of the LED is preferably an LED chip encapsulated by a compliant material, preferably silicone. The LED chip is supported within an optical shell so that a gap exists between the compliant material and the interior surface of the shell, thereby avoiding delamination.

Abstract: A method for forming a film pattern by disposing a functional liquid in a pattern forming region partitioned by a bank includes: disposing a first bank forming material to a substrate so as to form a first bank layer; and forming a second bank layer on the first bank layer, wherein the first bank forming material is an organic material while the second bank layer is made of a fluorine resin material covering the first bank layer.

Abstract: A package base structure of a light emitting device and associated manufacturing method is provided. The method includes steps of forming a first mask layer and a second mask layer on a first surface and a second surface of a substrate; defining a first opening and a second opening on the first mask layer and the second mask layer wherein the first opening is larger than the second opening; etching the substrate to form the package base structure having a holding space and at least two through holes. The upper opening of the holding space is located on the first surface of the substrate, and the bottom of the holding space can support the light emitting device. The lower openings of the through holes are located on the second surface of the substrate, and the tops of the through holes reach the bottom of the holding space. There is at least one slant structure at the contact between sidewalls of the through holes and the bottom of the holding space.

Abstract: It is an object of the present invention to provide a semiconductor display device using a protective circuit in which dielectric breakdown is prevented more effectively. In the invention, in the cases that a first interlayer insulating film is formed covering a TFT used for a protective circuit and a second interlayer insulating film, which is an insulating coating film, is formed covering a wiring formed over the first interlayer insulating film, a wiring for connecting the TFT to other semiconductor elements is formed so as to be in contact with the surface of the second interlayer insulating film so as to secure a path discharging charge accumulated in the surface of the second interlayer insulating film. Note that the TFT used for the protective diode is a so-called diode-connected TFT in which either of the first terminal or the second terminal is connected to a gate electrode.

Abstract: The present invention relates to a package structure of light emitting device, comprising a light emitting diode disposed on a submount, wherein the light emitting diode comprises a first contact and a second contact respectively connected with a first conductive lead and a second conductive lead of the submount. The first conductive lead and second conductive lead of the submount are electrically connected with a print circuit board. As a result, the light emitting diode is electrically connected with the print circuit board without the wire bonding process, and the power can be supplied to the light emitting diode through the print circuit board.

Abstract: A chip seat structure for light-emitting crystal and a packaging structure thereof. The chip seat structure includes: a model body made of a thermoconductive nonelectroconductive material, the model body having an integrated thermoconductive section; at least one cup seat disposed on a top face of the model body for mounting at least one light-emitting chip therein; and multiple electroconductive layers built on the surfaces of the model body and the cup seat. The electroconductive layers are designed with at least two electroconductive regions respectively defined as a cathode and an anode. At least one electrode-separating line is laid on the surface of the cup seat between the two electroconductive regions as a separating region. A light-emitting chip can be fixed in the cup seat and packaged at high heat-absorbing and heat-dissipating efficiency.

Abstract: A surface mounting device-type light emitting diode (SMD-type LED) comprises a lead frame composed of a pair of lead terminals; a package housing a portion of the lead frame therein, the package having an emission window which is opened so that light is emitted through the emission window; an LED chip mounted on the lead frame inside the package; a wire for electrically connecting the LED chip and the lead frame; and a molding material filled in the package, the molding material having surface irregularities with a predetermined shape formed on the surface thereof which is exposed through the emission window of the package.

Abstract: A light emitting diode (LED) package is disclosed. In one embodiment, the LED package includes an LED, which emits light corresponding to an electric signal and a substrate, which is mounted to electrically couple to the LED and has an anode lead frame and a cathode lead frame. The package also includes a voltage regulator diode, which is mounted on the substrate and has a parallel connection with the LED to maintain voltage regulation. The LED package further includes a shielding dam, which is located between the LED and the voltage regulator diode and prevents light emitted by the LED from being directly irradiated to and reflected or absorbed by the voltage regulator diode. In at least one embodiment, the LED package can prevent the light emitted by the LED from being directly absorbed by the voltage regulator diode.

Abstract: A light emitting element has a base made of heat conductive material, a wire plate made of an insulation material and secured to an upper surface of the base. Conductive patterns are secured to the wire plate, and a light emitting chip is secured to the base at an exposed mounting area. The light emitting chip is electrically connected to the conductive patterns.

Abstract: A semiconductor device includes an insulating substrate 2 having an obverse surface formed with a die pad 3, a rectangular semiconductor chip 7 such as an LED chip bonded to the die pad with a die bonding material 10, and a molded portion 9 made of a synthetic resin for packaging the semiconductor chip. The die pad 3 may be rectangular with dimensions close to those of the semiconductor chip or circular with a diameter close to the diagonal dimension of the semiconductor chip, whereby the positioning and orienting of the semiconductor chip can be accurately performed in bonding the semiconductor chip.

Abstract: One preferred embodiment according to the present invention, there is provided an oxynitride phosphor and a light emitting device using the same that is able to reduce production costs and chromaticity shifts. The phosphor is represented by a general formula of (Ca1?zYz)x(Si, Al)12(O, N)16:Eu2+y, and has a main phase of substantially an alpha SiAlON crystal structure, wherein the value z is larger than 0 and smaller than 0.15.

Abstract: A nitride-based semiconductor substrate has a substrate formed of a nitride-based semiconductor crystal having a mixed crystal composition with three elements or more. The substrate has a diameter of not less than 25 mm, and a thermal resistivity in a range of 0.02 Kcm2/W to 0.5 Kcm2/W in its thickness direction.

Abstract: A multilayered white light emitting diode and a method of fabricating the same include forming a phosphor mixture layer including a green phosphor and a blue phosphor on a UV light emitting diode and forming a red quantum dot layer on the phosphor mixture layer. In the white light emitting diode of the present invention, the quantum dots are excited by green and blue visible light, thus increasing luminescence efficiency and realizing stable white light. Moreover, the white light emitting diode can be widely used as a light source having high output and high efficiency, thus being capable of substituting for a backlight unit of an illumination device or display device.

Abstract: A semiconductor light emitting element has an electrode formed on a semiconductor layer, a passivation film covering a part of a top surface of the electrode, and a multilayer film formed on the electrode. The multilayer film has at least one pair of a Ti layer and a Ni layer, the Ti layer and the Ni layer being stacked alternately in the multilayer film.

Abstract: A light emitting element has a well layer formed of a GaN-based semiconductor, a barrier layer next to the well layer, the barrier layer being formed of a GaN-based semiconductor, and a GaN-based semiconductor layer formed between the well layer and the barrier layer. The GaN-based semiconductor layer has a dopant to cancel a piezoelectric field caused between the well layer and the barrier layer.

Abstract: An electrostatic discharge (ESD) protection apparatus for integrated circuits is provided. The ESD protection apparatus includes an ESD protection device. The ESD protection device is disposed in a guard ring and includes a special ESD protection unit and an ESD protection unit. The special ESD protection unit is parallel to the ESD protection unit and is disposed on the edge of the ESD protection device. The special ESD protection unit includes at least a special channel area and a plurality of contact windows. The minimum spacing between the two contact windows at two sides of the special channel area in the special ESD protection unit is greater than the minimum spacing between the two contact windows at two sides of the channel area in the ESD protection unit.

Abstract: In a semiconductor device of the present invention, an N type epitaxial layer is divided into a plurality of element formation regions by an isolation region. In one of the element formation regions, a MOS transistor is formed. Around the MOS transistor, a protection element having a PN junction region is formed. The PN junction region has a junction breakdown voltage lower than that of a PN junction region of the MOS transistor. By use of this structure, when negative ESD surge is applied to a pad for a source electrode, the PN junction region of the protection element breaks down. Accordingly, the MOS transistor can be protected.

Abstract: In a semiconductor device of the present invention, an N type epitaxial layer is divided into a plurality of element formation regions by an isolation region. In one of the element formation regions, an NPN transistor is formed. Around the NPN transistor, a protection element having a PN junction region is formed. The PN junction region has a junction breakdown voltage lower than that of a PN junction region of the NPN transistor. By use of this structure, when negative ESD surge is applied to a pad for a base electrode, the PN junction region of the protection element breaks down. Accordingly, the NPN transistor can be protected.

Abstract: The invention relates to a layout method for a transistor with improved ESD robustness. The layout method includes defining a ring region from a first conductive type; defining a first and a second rectangular diffusion regions from a second conductive type, wherein the first and second rectangular diffusion regions are isolated from each other; defining a ring diffusion region of the second conductive type between the first and second rectangular diffusion regions; defining a first gate electrode between the first rectangular diffusion region of the second conductive type and the ring diffusion region of the second conductive region; and defining a second gate electrode between the second rectangular diffusion region of the second conductive type and the ring diffusion region of the second conductive type.