Abstract: The present invention provides a switching power supply unit and a voltage converting method capable of suppressing a surge voltage applied to an output rectifier element more effectively. Energy in the direction of suppressing reverse voltages (surge voltages) applied to a plurality of rectifier diodes is injected into a rectifier circuit. Reverse voltages applied to the plurality of rectifier diodes are maintained to be lower than a voltage to be inherently applied for a predetermined period. Therefore, rise in the surge voltage is suppressed and rectifier elements (rectifier diodes) having low withstand voltage can be used.

Abstract: A line layout structure of semiconductor memory device comprises first metal wire lines forming a bit line coupled to a memory cell, second metal wire lines disposed substantially orthogonal to the first metal wire lines and over the first metal wire lines, the second metal wire lines forming a section word line electrically coupled to the memory cell, and third metal wire lines disposed substantially parallel to the second metal wire lines and over the second metal wire lines, the third metal wire lines forming a first power line or signal line.

Abstract: A memory includes a wafer having at least a first and second edge, at least one memory bank array, a data path, and a plurality of data pads. The data path is coupled to the memory bank array. The plurality of data pads are coupled to the data path and configured with the data path to bus data to and from the memory bank array. The data pads are further configured such that each of the data pads are located adjacent the first and second edges of the wafer. The memory component is configurable for alternative applications such that in a first application all of the data pads used to bus data are located only on the first edge of the wafer and such that in a second application at least one of the data pads used to bus data is located on the first edge of the wafer and at least one of the data pads used to bus data is located on the second edge of the wafer.

Abstract: According to the semiconductor memory device of this invention, an XP type MRAM cell array and an STr type MRAM cell array are formed on a single chip. The XP type MRAM cell array is laid over the STr type MRAM cell array to form a layered structure. The STr type MRAM cell array serves as a work memory area, while the XP type MRAM cell array serves as a data storage area. A cell of the XP type MRAM cell array and a cell of the STr type MRAM cell array may be connected to a same bit-line. By passing predetermined current through the bit-line, and passing current through a first word-line connected to the cell of the XP type MRAM cell array, and through a second word-line connected to the cell of the STr type MRAM cell array, it is possible to simultaneously write data into the cells of the XP and STr type MRAM cell arrays.

Abstract: A ferroelectric memory device includes memory cells using ferroelectric capacitors provided at intersections of local bit lines associated with a main bit line and word lines. The ferroelectric memory device includes: first and second local bit lines associated with a first main bit line; first and second connection transistors for connecting the first and second local bit lines to the first main bit line; first and second grounding transistors for grounding the first and second local bit lines; a first selection line that is commonly connected to gates of the first grounding transistor and the second connection transistor; and a second selection line that is commonly connected to gates of the first connection transistor and the second grounding transistor.

Abstract: A semiconductor memory device and a dummy line biasing method in which in the semiconductor memory device of a diode structure including a plurality of memory cells each having one variable resistance device and one diode device, the memory device includes a plurality of normal word lines, a plurality of normal bit lines, at least one or more dummy word lines and at least one or more dummy bit lines. The plurality of normal word lines are each arrayed in a first direction as a length direction. The plurality of normal bit lines are each arrayed in a second direction as a width direction, intersected with the first direction, so that the plurality of normal bit lines are intersected with the normal word lines. At least one or more dummy word lines are arrayed in the same structure as the normal word lines in the first direction, the at least one or more dummy word lines having a constant level of applied voltage.

Abstract: A magnetic storage device includes a magnetoresistive element. A pair of side faces of the magnetoresistive element are at least partially opposed to end faces of a pair of open ends of a magnetic yoke. Moreover, the pair of side faces of the magnetoresistive element and the end faces of the pair of open ends of the magnetic yoke have predetermined angles, respectively. Thus, the magnetic storage device can reduce writing current while the magnetic storage device has a small and simple structure.

Abstract: MTJ elements are accumulated in a plurality of portions on a semiconductor substrate. A first conductive line functioning as a read line and extending in the X direction is connected to pin layers of the MTJ elements. A second conductive line functioning as a write line and read line and extending in the X direction is connected to free layers of the MTJ elements. A write line extends in the Y direction and is shared with two MTJ elements present above and below the write line. The two MTJ elements present above and below the write line are arranged symmetric to the write line.

Abstract: A dynamically-operating restoration circuit is used to apply a voltage or current restore pulse signal to thyristor-based memory cells and therein restore data in the cell using the internal positive feedback loop of the thyristor. In one example implementation, the internal positive feedback loop in the thyristor is used to restore the conducting state of a device after the thyristor current drops below the holding current. A pulse and/or periodic waveform are defined and applied to ensure that the thyristor is not released from its conducting state. The time average of the periodic restore current in the thyristor may be lower than the holding current threshold. While not necessarily limited to memory cells that are thyristor-based, various embodiments of the invention have been found to be the particularly useful for high-speed, low-power memory cells in which a thin capacitively-coupled thyristor is used to provide a bi-stable storage element.

Abstract: A method of operating a phase change memory array is disclosed and includes identifying a read disturb condition associated with the phase change memory array, and performing a conditional refresh operation in response to the identified read disturb condition. A phase change memory is also disclosed and includes an array of phase change memory cells, and a read disturb system configured to identify a read disturb condition and perform a refresh operation on the array in response thereto.

Abstract: A phase change memory device includes a semiconductor substrate which includes a plurality of phase change memory cells, a plurality of local bit lines extending over the semiconductor substrate, each of the plurality of local bit lines being coupled to the plurality of phase change memory cells, and a plurality of global bit lines extending over the plurality of local bit lines, each of the plurality of global bit lines being selectively coupled to the plurality of local bit lines. The plurality of global bit lines are located at two or more different wiring line levels over the semiconductor substrate.

Abstract: An MRAM device having a plurality of MRAM cells formed of a fixed magnetic layer, a second soft magnetic layer and a dielectric layer interposed between the fixed magnetic layer and the soft magnetic layer. The MRAM cells are all formed simultaneously and at least some of the MRAM cells are designed to function as antifuse devices whereby the application of a selected electrical potential can short the antifuse device to thereby affect the functionality of the MRAM device.

Abstract: A microelectronic programmable structure and methods of forming and programming the structure are disclosed. The programmable structure generally include an ion conductor and a plurality of electrodes. Electrical properties of the structure may be altered by applying a bias across the electrodes, and thus information may be stored using the structure.

Abstract: A non-volatile memory device has a channel region between source/drain regions, a floating gate, a control gate, a first dielectric region between the channel region and the floating gate, and a second dielectric region between the floating gate and the control gate. The first dielectric region includes a high-K material. The non-volatile memory device is programmed and/or erased by transferring charge between the floating gate and the control gate via the second dielectric region.

Abstract: A non-volatile electrically erasable programmable read only memory (EEPROM) capable of storing two bit of information having a nonconducting charge trapping dielectric, such as silicon nitride, sandwiched between two silicon dioxide layers acting as electrical insulators is disclosed. The invention includes a method of programming, reading and erasing the two bit EEPROM device. The nonconducting dielectric layer functions as an electrical charge trapping medium. A conducting gate layer is placed over the upper silicon dioxide layer. A left and a right bit are stored in physically different areas of the charge trapping layer, near left and right regions of the memory cell, respectively. Each bit of the memory device is programmed in the conventional manner, using hot electron programming, by applying programming voltages to the gate and to either the left or the right region while the other region is grounded.

Abstract: A non-volatile semiconductor memory device includes an electrically data rewritable non-volatile semiconductor memory cell and a write circuit for writing data in the memory cell, the write circuit writing a data in the memory cells by supplying a write voltage Vpgm and a write control voltage VBL to the memory cell, continuing the writing of the data in the memory cell by changing the value of the write control voltage VBL in response to an advent of a first write state of the memory cell and inhibiting any operation of writing a data to the memory cell by further changing the value of the write control voltage VBL to Vdd in response to an advent of a second write state of the memory cell.

Abstract: A semiconductor integrated circuit includes non-volatile memory elements (PM1, PM2), each of which has a first source electrode, a first drain electrode, a floating gate electrode and a control gate electrode and is capable of having different threshold voltages, and read transistor elements (DM1, DM2), each of which has a second source electrode and a second drain electrode and is capable of having different mutual conductances according to the threshold voltage of the non-volatile memory element. The read transistor element has a switching state according to the electron injection state or the electron emission state, in other words, the writing state or the erasing state of the floating gate electrode. In a read operation, it is not necessary to cause a channel current to flow according to the threshold voltage of the non-volatile memory element.

Abstract: A non-volatile memory array including a plurality of memory units is provided. Each memory unit is serially connected with a select transistor and a memory cell. A source region is next to the select transistor while a drain region is next to the memory cell. The drain lines are arranged in parallel in column direction and connected with the drain regions of the memory units in one column. The bit lines are arranged in parallel in row direction and connected with the source regions of the memory units in one row. The word lines are arranged in parallel in column direction and connected with the select gates of the memory units in one column. The control lines are arranged in parallel in column direction and connected with the control gates of the memory units in one column. The control lines are grouped by two and electrically connected with each other.

Abstract: An embodiment of the present invention relates to a repair circuit of a semiconductor memory device. The repair circuit includes an address counter that sequentially generates a first column address signal and a second column address signal in response to a write enable signal or a read enable signal, a repair controller that generates a repair column address signal earlier than the second column address signal in response to the first column address signal, an address latch enable signal, a command enable signal, and a write enable signal, and a repair scramble unit that selects a repair cell in response to a repair I/O control signal and the repair column address signal. If an address on which a repair operation must be performed occurs, the repair controller directly receives the write enable signal or the read enable signal and activates the repair controller earlier than a general cell using a previous address, thereby offsetting an operating time consumed in the repair controller.

Abstract: A semiconductor memory device includes a page buffer circuit and an arrangement of memory elements each including: a gate electrode provided on a semiconductor layer with an intervening gate insulating film; a channel region provided beneath the gate electrode; a diffusion area provided on both sides of the channel region, having an opposite polarity to the channel region; and a memory functioning member provided on both sides of the gate electrodes, having a function of storing electric charge. The page buffer circuit provides a common resource shared between a memory array controller and a user. The page buffer circuit has two planes containing random access memory arrays. The page buffer circuit also includes a mode control section to facilitate access to the planes over a main bus in user mode and access to the planes by the memory array controller in memory control mode.

Abstract: A threshold voltage read method of a nonvolatile semiconductor memory device is disclosed. The threshold voltage read method applies a first threshold voltage measuring read voltage to the word line with a selection gate kept in a nonconductive state and then makes the selection gate conductive to read out a threshold voltage of the first data at the time of reading out the threshold voltage of the first data. Then, it applies a second threshold voltage measuring read voltage to the word line with the selection gate kept in the conductive state to read out a threshold voltage of the second data at the time of reading out the threshold voltage of the second data.

Abstract: A nonvolatile semiconductor memory includes a memory cell array, a flag information storage that stores a write flag indicating success/failure of writing in association with each address of a plurality of data segments contained in the data block, an internal address storage that selects the address where the writing has failed, a write circuit that performs data writing, a comparator that performs verify operation to verify success/failure of the data writing, and a sequence controller that updates a write flag according to the result of the verify operation.

Abstract: A flash memory device comprises an array of memory cells arranged in rows and columns and a word line voltage generating circuit adapted to generate a plurality of read voltages at the same time during a multi-bit read operation. The device further comprises a row selecting circuit adapted to select one of the rows and drive the selected row with a word line voltage, and voltage lines transmitting the respective read voltages to the row selecting circuit as the word line voltage. The read voltages are supplied to the respective voltage lines before starting read periods of the multi-bit read operation.

Abstract: A semiconductor memory device comprises a cell array including a plurality of memory cells. The semiconductor memory device further comprises a plurality of bitlines formed in a bit layer and connected to the plurality of memory cells, wherein the bitlines extend from the cell array along a single direction. A common source line is formed in a common source layer and adapted to provide a predetermined source voltage to the plurality of memory cells. A voltage control block comprising a plurality of voltage control circuits adapted to control the voltage levels of the plurality of bitlines through voltage supply lines formed in a voltage-line metal layer is formed on one side of the cell array.

Abstract: A nonvolatile semiconductor memory recovers variation in the threshold of a memory cell due to disturbance related to a word line. The nonvolatile memory continuously performs many writing operations without carrying out single-sector erasing after each writing operation, performing the additional writing operations quicker than the usual writing operation, and lightening the burden imposed on software for use in additional writing. The data stored in a designated sector is read out before being saved in a register, and the selected sector is subjected to single-sector erasing when a predetermined command is given. Then write expected value data is formed from the saved data and data to be additionally written, completing the writing operation.

Abstract: A memory architecture for a disk drive system in which Synchronous Random Access Memory (SRAM) and Dynamic Random Access Memory (DRAM) functions are provided on separate integrated circuits, and an interface protocol for transmitting information between these two memory components are provided to improve performance of the system, as well as reduce pin count and cost. An integrated circuit memory includes a random-access memory. The random-access memory includes a first terminal for receiving selection information. The random-access memory includes a second terminal for selectively (i) receiving a command, or (ii) receiving or transmitting data in accordance with the selection information received by the first terminal.

Abstract: An electric circuit for inverting a data bit of a data burst read out from a memory module comprises a buffer for buffering a data burst being comprised of at least two data words, a decoder device comprised of at least two parallel-connected decoders, each comparing bitwise and simultaneously two neighbouring data words of the data words buffered in the buffer and generating an inversion flag, if the number of different data bits of the two neighbouring data words exceeds half the number of data bits of a data word, a correction device for generating a corrected inversion flag for a specific decoder of the decoders by inverting or not inverting the inversion flag of the specific decoder dependent on the inversion flag generated by the specific decoder and the inversion flags generated by the remaining of the decoders, and an inversion device comprised of a plurality of inverters, each inverting or not inverting a present of the data words of an associated of the decoders dependent on the corrected inversion

Abstract: According to the present invention, a circuit and methods for enhancing the operation of SOI fabricated devices are disclosed. In a preferred embodiment of the present invention, a pulse discharge circuit is provided. Here, a circuit is designed to provide a pulse that will discharge the accumulated electrical charge on the body of the SOI devices in the memory subarray just prior to the first access cycle. As explained above, once the accumulated charge has been dissipated, the speed penalty for successive accesses to the memory subarray is eliminated or greatly reduced. With a proper control signal, timing and sizing, this can be a very effective method to solve the problem associated with the SOI loading effect. Alternatively, instead of connecting the bodies of all SOI devices in a memory circuit to ground, the bodies of the N-channel FET pull-down devices of the local word line drivers can be selectively connected to a reference ground.

Abstract: A method of delaying an input signal comprises serially receiving the input signal at a plurality of rows of delay elements; applying a row selection signal to a row of delay elements to select the row from the plurality of rows; supplying a column selection signal to a tap buffer associated with a delay element in the selected row to select an output of the delay element; coupling outputs of tap buffers associated with delay elements in each row to form an output of each row; coupling outputs of each of the plurality of rows to provide an incrementally-delayed input signal from the selected row; outputting the incrementally-delayed input signal from the selected delay element in the selected row; and changing row selection from the selected row to a contiguous row of the plurality of rows in the absence of a change in the selection of the corresponding tap buffers.

Abstract: A method for providing programmable delay read data strobe gating with voltage and temperature compensation. The method includes receiving a training request. The method further includes calibrating programmable delay lines for operating frequency and voltage and temperature variation. The method further includes locking to a first feedback signal. The method further includes storing a first feedback lock setting corresponding to the locked-to first feedback signal. The method further includes granting the training request. Additionally, when training is completed, the method further includes recalibrating the programmable delay lines for operating frequency and voltage and temperature variation.

Abstract: A non-volatile memory wherein bad columns in the array of memory cells can be removed is described. Additionally, substitute redundant columns can replace the removed columns. Both of these processes are performed on the memory in a manner that is externally transparent and, consequently, need not be managed externally by the host or controller to which the memory is attached. An inventory of the bad columns can be maintained on the memory. At power up, the list of bad columns is used to fuse out the bad columns. The memory may also contain a number of redundant columns that can be used to replace the bad columns.

Abstract: A method and apparatus for reducing power consumption of a memory device. The method includes initiating a precharge operation. The precharge operation includes driving one or more bitlines to a precharge voltage. The method also includes identifying one or more defective wordlines and, during the precharge operation, driving the identified defective word lines to the precharge voltage.

Abstract: A low voltage, high-gain current/voltage sense amplifier (ISA/VSA) circuit with improved read access time is provided herein. According to one embodiment, the ISA/VSA described herein includes a pair of current reference branches for generating a pair of reference currents in response to a pair of differential input signals supplied thereto. The differential input signals are differential voltages which are converted to differential currents by the current reference branches. In some cases, the current reference branches may be used for amplifying and mirroring the reference currents onto output nodes of the ISA/VSA. In doing so, the current reference branches may increase the amplification and improve the performance of the sense amp circuit, even under extreme mismatch conditions. In addition, positive feedback may be used within the ISA/VSA design to further increase the amplification and speed of the sense operation.

Abstract: Method and means for random or systematic mismatch compensation for a memory sensing system are disclosed. A sense amplifier includes a bulk voltage source to set the bulk of the sensing transistor to be a voltage different than the voltage driving the sensing transistor. For an NMOS sensing transistor, a triple well is used with the variable bulk voltage. Differential sense amplifiers with various offset compensation are included. Intentional offset creation for useful purpose is also included.

Abstract: The present disclosure provides an electrical fuse cell with redundancy features and the method for operating the same. The fuse cell includes a first set of electrical fuses having at least one electrical fuse contained therein, and a second set of electrical fuses having at least one electrical fuse for providing redundancy to at least one fuse of the first set, wherein if one of the first set of electrical fuses is defective, at least one of the second set of the electrical fuses can be programmed to provide a redundancy function of the defective fuse.

Abstract: Disclosed is a method of repairing an integrated circuit of the type comprising of a multitude of memory arrays and a fuse box holding control data for controlling redundancy logic of the arrays. The method comprises the steps of providing the integrated circuit with a control data selector for passing the control data from the fuse box to the memory arrays; providing a source of alternate control data, external of the integrated circuit; and connecting the source of alternate control data to the control data selector. The method comprises the further step of, at a given time, passing the alternate control data from the source thereof, through the control data selector and to the memory arrays to control the redundancy logic of the memory arrays.

Abstract: The invention is directed to a system and method comprising a first semiconductor device and a second semiconductor device, wherein the first semiconductor device comprises a voltage supply means, characterized in that the voltage supply means of the first semiconductor device is connected to the second semiconductor device, so that the voltage supply means of the first semiconductor device can provide a supply voltage for the second semiconductor device.

Abstract: Apparatus and methods for communicating command and address inputs to a memory device. In one embodiment, a memory device includes a shared bus interface defined by a portion of pins from a command bus interface and a portion of pins from an address bus interface. Each portion of pins is configured to receive address and command inputs, depending a given command/address combination being asserted by a memory controller.

Abstract: A semiconductor memory module includes a control component connected via various buses to semiconductor memory components on the top and bottom of a module board. Depending on the storage capacity and the rank configuration of the semiconductor memory module, address terminals are actuated via selection circuits either with address signals or control signals. According to an embodiment of the control component, control terminals are actuated with different control signals. The multiplexing of address and control signals allows the control component to control semiconductor memory components, in a semiconductor memory module, with different memory configurations without requiring an increased number of control terminals.

Abstract: Disclosed are improved layouts for memory cell and memory cell arrays. A memory cell array of multiple memory cells connected by signal lines that twist in connecting the array. Further, an eight transistor memory cell that comprises different resistive paths as seen by the signal lines electrically connected to the cell and asymmetric pass devices associated with those resistive paths. Furthermore, an eight transistor memory cell that includes butt contacts.

Abstract: A semiconductor storage device has a simple control circuit that is added to a general one-port RAM. Taking a port-A clock signal as the reference, the control circuit generates a select signal that selects a port A during the period from elapse of a first predetermined time from the reference timing until a second predetermined time has elapsed and selects a port B during other periods. The control circuit generates a port-A delayed clock signal in the period in which the port A is selected. The control circuit generates a port-B delayed clock signal during the period from elapse of the second predetermined time until a third predetermined time has elapsed. The control circuit generates a conflict monitoring signal during the period from the reference timing until the second predetermined time has elapsed. When a clock signal is supplied from the port B while the conflict monitoring signal is being generated, the port-B delayed clock signal is masked while the conflict monitoring signal is being generated.

Abstract: A synchronous output signal generated by an integrated circuit (IC) component is synchronized to an applied clock signal for each individual IC component. A variable feedback delay in the IC component is incrementally altered to alter the phase skew between the clock signal and the output signal. The relative phase order of the clock and output signals is monitored in the IC component. In response to detecting a swap in the relative phase order of the clock and output signals, the variable feedback delay ceases to be altered. In some embodiments, the IC component may be a SDRAM component.

Abstract: A computer-implemented method of accounting for angle-dependent wavelet stretch in seismic data based on a novel relationship between wavelet stretch and the cosine of a reflection angle of an acoustic ray. Conventional seismic data having at least one wavelet, such as data generated from a reflection seismic survey, is accessed. The data is processed such that at least one wavelet is subject to angle-dependent wavelet stretch. A reflection angle for at least one wavelet is also determined. An operator is utilized to calculate a wavelet stretch factor for at least one wavelet based on the cosine of the corresponding reflection angle of the wavelet. The wavelet stretch factor is applied to the seismic data to account for angle-dependent wavelet stretch.

Abstract: Apparatuses and methods for generating fluid pressure pulses are disclosed. An example apparatus may include a chamber that can collect fluid and an upstream ported disc coupled to a downstream end of the chamber. The upstream ported disc may rotate about a central axis. The upstream ported disc includes an upstream eccentric port that rotates about the central axis as the upstream ported disc rotates. The example apparatus may include a downstream ported disc coupled to a downstream end of the upstream ported disc such that the downstream ported disc remains substantially rotationally fixed relative to the upstream ported disc. The downstream ported disc includes a downstream eccentric port that may align with the upstream eccentric port to form a passageway for fluid to exit from the chamber to outside of the apparatus, at some time in a rotation cycle of the upstream ported disc.

Abstract: The invention relates to a module (100) which is attached to a trawl, and which at least comprises measuring sensors (330) and a power supply unit. (320) The sensors are basically inactive, but can be activated as the need arises to measure different parameters. In an embodiment the module also includes a power-generating movement device connected to a charging device that can supply energy to the power supply unit. The module may also include communication means. In an alternative embodiment the module ma include a trawl door that can drag the drawl in a desired direction. Several modules may be (combined to form a system that both measures different parameters and positions the trawl in order to achieve an optimal trawling process.

Abstract: Provided is a method for controlling a positioning system using ultrasonic waves. The method installs a plurality of ultrasonic satellites generating ultrasonic signals to position a mobile. The method sequentially gives satellite identification numbers to the plurality of ultrasonic satellites, generates a synchronization signal and providing it to the plurality of ultrasonic satellites, and allows the mobile to receive ultrasonic signals, which are generated by the plurality of ultrasonic satellites in the order of the satellite identification numbers when the ultrasonic satellites receive the synchronization signal, to measure distances between the mobile and the ultrasonic satellites.

Abstract: An underwater acoustic beacon comprises a cylindrical transducer and at least one spiral wavefront transducer aligned along a common central axis. For use in underwater navigation, the cylindrical and spiral wavefront transducers are activated singly and in combination in accordance with a prescribed sequence.

Abstract: The method and the apparatus disclosed serve to acquire seismic induced movements. A coil and a permanent magnet are contained in an enclosure and the seismic movements induce a relative movement between said coil and said magnet. The current induced into the coil is appraised as a measure of said seismic movement. The position of the coil in relation to the permanent magnet is monitored by a position sensor. A closed loop control generates a current that is fed into the coil so that the coil settles at a given neutral position relative to the permanent magnet.

Abstract: An electronic device that includes functionality to perform at least two functions, a first of which may be timekeeping and the other of which is at least a function other than the first function.

Abstract: A clock with an insertion part is provided to facilitate presenting various illustrations such as photographs, advertising copy, logos, etc., upon the front surface thereof after purchase by a customer. The insertion part is separately provided apart from the clock and then inserted into and coupled to the main clock frame from the rear after assembly of the clock. In a preferred embodiment, the clock includes the main body frame, an hour plate, a transparent case and a backside case, with the part being inserted into the insertion opening provided in the backside case.