Abstract: A method for preparing a cathode material. In one aspect, the method includes: (1) providing a mixture of at least one iron-containing compound, at least one lithium-containing compound, at least one phosphorus-comprising compound, and at least one oxygen-containing compound, and (2) sintering the mixture, in which the decomposition temperature of the iron-containing compound and the lithium-containing compound is lower than that of the phosphorus-comprising compound and/or the oxygen-containing compound. The cathode material thus prepared, for example, a LiFePO4 powder, has a purity ranging from about 90% to about 95% by weight, and a gram specific capacity ranging from about 150 to about 170 mAh/g.

Abstract: An anode active material for use in a lithium secondary battery including a mixture of graphite I that has, according to X-ray powder diffraction, d002 of not smaller than 0.3354 nm and not greater than 0.337 nm, Lc(004) of smaller than 100 nm, La(110) of not smaller than 100 nm, and a half width of the peak of a plane (101) at a diffraction angle (2?) of 44 degrees to 45 degrees of not smaller than 0.65 degree and another graphite so as to have, according to X-ray powder diffraction, d002 of not smaller than 0.3354 nm and not greater than 0.337 nm, Lc(004) of not smaller than 80 nm, La(110) of not smaller than 100 nm, and a half width of the peak of a plane (101) at a diffraction angle (2?) of 44 degrees to 45 degrees of not smaller than 0.5 degree.

Abstract: Embodiments of the invention relate to a composite hydrogen storage material comprising active material particles and a binder, wherein the binder immobilizes the active material particles sufficient to maintain relative spatial relationships between the active material particles.

Abstract: Provided are: a silicon nitride powder for siliconitride phosphors with higher luminance, which can be used for a fluorescent display tube (VFD), a field emission display (FED), a plasma display panel (PDP), a cathode ray tube (CRT), a light emitting diode (LED), and the like; a CaAlSiN3 phosphor, an Sr2Si5N8 phosphor, an (Sr, Ca)AlSiN3 phosphor and an La3Si6N11 phosphor, each using the silicon nitride powder; and methods for producing the phosphors. The present invention relates to a silicon nitride powder for siliconitride phosphors, which is characterized by being a crystalline silicon nitride powder that is used as a starting material for producing a siliconitride phosphor that includes silicon element and nitrogen element but does not contain oxygen element as a constitutent element, and which is characterized by having an oxygen content of 0.2% by weight to 0.

Abstract: A green and yellow emitting lutetium aluminate based photoluminescent material having the formula (Lu1-x-yGdxCey)3BzAl5O12C2z wherein: B is one or more of Mg, Sr, Ca or Ba; C is F, Cl, Br or I; 0<x?0.5; 0.0001?y?0.2; and 0?z?0.50. The compound absorbs radiation at a wavelength ranging from about 200 nm to about 420 nm and emits visible light in the range from about 515 nm to about 577 nm. Furthermore, the compound has the characteristic CIE (x,y): 0.320<x<4.90 and 0.520<y<5.90. In some embodiments, B is Ba or Sr and C is F.

Abstract: Borate luminescent materials, preparation methods and uses thereof are provided. The luminescent materials are represented by the general formula: (In1-xRex)BO3:zM, wherein Re is one or two selected from Tm, Tb, Eu, Sm, Gd, Dy and Ce, M is one or two selected from metal nano particles of Au, Ag, Pt or Pd, 0<x?0.5, 0<z?1×10?2. Compared to the luminescent materials in the prior art, the said luminescent materials have higher luminous intensity and luminous efficiency, which can be used in field emission displays or light source.

Abstract: The boiler anti-corrosive of the present invention contains an amine compound represented by formula (1): NH2—(CH2)m—O—(CH2)n—OH??(1) (wherein each of m and n is an integer of 1 to 3), or contains an oxygen scavenger and the amine compound represented by formula (1). The anti-corrosive is generally used in a boiler operated with a superheater or a steam turbine, or in such a boiler to which treated water is fed, and can more effectively maintain the pH of boiler water and can prevent corrosion not only of the boiler tank but also in the entire boiler system including a feed-condensate system, without adding a large amount of phosphate salt or elevating the Na/PO4 mole ratio to 3 or higher.

Abstract: A semiconductor composition for producing a semiconducting layer with consistently high mobility is disclosed. The semiconductor composition includes a diketopyrrolopyrrole-thiophene copolymer and a non-aromatic halogenated hydrocarbon solvent. The copolymer has a structure disclosed within. Preferably, the non-aromatic halogenated hydrocarbon solvent contains at least 2 carbon atoms and at least 3 halogen atoms.

Abstract: This disclosure includes a process that unexpectedly can produce very inexpensive graphene, functionalized graphenes, and a new compound called graphenol in particulate or dispersions in solvents. The process can also produce graphene layers on metallic and nonmetallic substrates. Further, the graphenol, functionalized graphenes, and graphene can be utilized to form nanocomposites that yield property improvements exceeding anything reported previously.

Abstract: A substituted lithium-manganese metal phosphate of formula LiFexMn1-x-yMyPO4 in which M is a bivalent metal from the group Sn, Pb, Zn, Mg, Ca, Sr, Ba, Co, Ti and Cd and wherein: x<1, y<0.3 and x+y<1, a process for producing it as well as its use as cathode material in a secondary lithium-ion battery.

Abstract: The present invention relates to a composite material containing particles of a lithium transition metal phosphate and carbon with a carbon content of ?1.4 wt.-%. The present invention further relates to an electrode containing the composite material and a secondary lithium-ion battery containing an electrode comprising the composite material.

Abstract: Methods and systems for improved dispersion and solubility of carbon materials such as carbon nanotubes through novel binary solvent blends, which include in some embodiments, a mixture of a dibasic ester blend and DMSO.

Abstract: The present invention relates to a conductive polymer composition for a PTC element with decreased NTC characteristics, using carbon nanotubes, a PTC binder resin, and a cellulose-based or polyester-based resin for fixing the carbon nanotubes and the PTC binder, and to a PTC element, a circuit and a sheet heating element using the same.

Abstract: A paste composition for a solar cell electrode includes: a mixture of conductive powders, a glass frit, and an organic vehicle, and the mixture of conductive powders includes about 1 wt % to about 10 wt % of a first conductive powder having an average particle diameter (Dx) from about 1 nm to about 100 nm, and about 90 wt % to about 99 wt % of a second conductive powder having an average particle diameter (D50) from about 0.5 ?m to about 5 ?m.

Abstract: This silver-coated spherical resin includes: a spherical resin; and silver coated on a surface of the spherical resin, wherein an amount of the silver is in a range of 2 to 80 parts by mass with respect to 100 parts by mass of the silver-coated spherical resin, and a crystallite diameter of the silver measured by X-ray diffractometry is in a range of 18 to 24 nm. This method for producing a silver-coated spherical resin includes: a process of subjecting a spherical resin to a pretreatment using an aqueous solution of a tin compound; and a subsequent process of subjecting the spherical resin to an electroless silver plating using a reducing agent, wherein, during the pretreatment, a temperature of the aqueous solution of the tin compound is set to be in a range of 20 to 45° C.

Abstract: An oxide sintered body including an oxide of indium (In), gallium (Ga), and positive trivalent and/or positive tetravalent metal X, wherein the amount of the metal X relative to the total amount of In and Ga is 100 to 10000 ppm (weight).

Abstract: The invention provides a precursor composition for forming an amorphous metal oxide semiconductor layer, containing a metal salt, a primary amide, and a water-based solution. An amorphous metal oxide semiconductor layer is formed by use of the composition.

Abstract: A thermoelectric material that comprises a ternary main group matrix material and nano-particles and/or nano-inclusions of a Group 2 or Group 12 metal oxide dispersed therein. A process for making the thermoelectric material that includes reacting a reduced metal precursor with an oxidized metal precursor in the presence of nanoparticles.

Abstract: A thermoelectric material that comprises a binary main group matrix material and nano-particles and/or nano-inclusions of metal oxide dispersed therein, and has electrical properties of ternary doped materials. A process for making the thermoelectric material that includes reacting a reduced metal precursor with an oxidized metal precursor in the presence of nanoparticles.

Abstract: A composition is provided comprising a host material and a luminescent dopant. The composition exhibits dual luminescent emission peaks, one each for the host material and the luminescent dopant. The intensity of the emission peaks vary in intensity as a result of the changing temperature of the composition. This quality enables the composition to be used for ratiometric optical thermometry, including exemplary applications, such as in situ temperature sensing.

Abstract: A thermoelectric material that comprises a ternary main group matrix material and nano-particles and/or nano-inclusions of transition metal oxide dispersed therein. A process for making the thermoelectric material that includes reacting a reduced metal precursor with an oxidized metal precursor in the presence of transition metal oxide nanoparticles.

Abstract: There is provided a semiconductive ceramic sintered compact that has a conductivity high enough to attain static electricity removal and antistatic purposes and, at the same time, has excellent mechanical properties or stability over time. The semiconductive ceramic sintered compact includes at least a main phase and first and second phases contained in the main phase observed as a result of observation of any face of the sintered compact, the main phase being a ceramic sintered phase containing Al2O3 particles, the first phase being a grain boundary phase including a conductive substance-containing conductive phase and Al2O3 particles, the Al2O3 particles being present in an island-sea form in the conductive phase, the second phase being a grain boundary phase containing a conductive phase having the same composition as the conductive phase in the first phase and having a structure that electrically connects the first phases three-dimensionally to each other.

Abstract: A method and system are described for tensioning structural strands 1 of a tendon in a duct. Each strand 1 is fitted with its own load cell 22, so that the individual tension values in each individual strand 1 can be measured during the tensioning of the strands 1. The load cells 22 may be removed after tensioning, or left in situ to enable ongoing monitoring of the tension in the strands 1. The load cells 22 may be calibrated simultaneously by tensioning the strands 1 to an equal tension using individual jacks 10, then normalizing the signals from each load cell 22 to the known equal tension value. A further calibration to a global strand load measurement may also be performed.

Abstract: A slider assembly includes: a front section; a back section, wherein the front section conforms to the cross sectional profile of rails forming the terminal end of a barrier, to which the slider will be fitted; and wherein the front section in combination with the back section create an internal space there between, the internal space dimensioned, to be capable of substantially surrounding both an associated first and second rails of the terminal end, as well as at least two further rails located downstream of said first and second rails, wherein the slider assembly has first and second opposed portions and the slider assembly is configured so that the first and second opposed portions move with respect to each other so the slider assembly applies an increasing compressive force to telescoping rails as a consequence of the slider assembly travelling along one or more subsequent rail(s) during telescoping.

Abstract: A resistive-switching memory element is described. The memory element includes a first electrode, a porous layer over the first electrode including a point defect embedded in a plurality of pores of the porous layer, and a second electrode over the porous layer, wherein the nonvolatile memory element is configured to switch between a high resistive state and a low resistive state.

Abstract: A nonvolatile resistive memory element has a novel variable resistance layer that is passivated with non-metallic dopant atoms, such as nitrogen, either during or after deposition of the switching layer. The presence of the non-metallic dopant atoms in the variable resistance layer enables the switching layer to operate with reduced switching current while maintaining improved data retention properties.

Abstract: A memory device includes a plurality of side-wall electrodes formed on a first side-wall of a trench within an insulating layer over a first plurality of contacts in an array of contacts in a substrate. The plurality of side-wall electrodes contact respective top surfaces of the first plurality of contacts. The side-wall electrodes respectively comprise a layer of tantalum nitride, having a composition TaxNy, where y is greater than x, and a layer of electrode material having a lower electrical resistivity and a lower thermal resistivity than the layer of tantalum nitride. Top surfaces of the plurality of side-wall electrodes contact memory material. A second plurality of side-wall electrodes may be formed on a second side-wall of the trench over a second plurality of contacts in the array of contacts.

Abstract: A nonvolatile memory device includes a substrate, a lower electrode formed above said substrate, a second variable resistance layer formed above said lower electrode and comprising a second transitional metal oxide, a first variable resistance layer formed above said second variable resistance layer and comprising a first transitional metal oxide having an oxygen content that is lower than an oxygen content of the second transitional metal oxide, and an upper electrode formed above said first variable resistance layer. A step is formed in an interface between said lower electrode and said second variable resistance layer. The second variable resistance layer is formed covering the step and has a bend above the step.

Abstract: A method of manufacturing a nonvolatile memory element, the method including: forming a first lower electrode layer, a current steering layer, and a first upper electrode layer; forming a second lower electrode layer, a variable resistance layer, and a second upper electrode layer on the first upper electrode layer; patterning the second upper electrode layer, the variable resistance layer, and the lower electrode layer; patterning the first upper electrode layer, the current steering layer, and first lower electrode layer to form a current steering element, using the second lower electrode layer as a mask by use of etching which is performed on the second lower electrode layer at an etching rate lower than at least etching rates at which the second upper electrode layer and the variable resistance layer are etched; and forming a variable resistance element which has an area smaller than the area of the current steering element.

Abstract: A resistive memory device may include a substrate, gate electrode structures, a first impurity region, a second impurity region, a first metal silicide pattern and a second metal silicide pattern. The substrate may have a first region where isolation patterns and first active patterns may be alternately arranged in a first direction, and a second region where linear second active patterns may be extended in the first direction. The gate electrode structures may be arranged between the first region and the second region of the substrate. The first and second impurity regions may be formed in the first and second impurity regions. The first metal silicide pattern may have an isolated shape configured to make contact with an upper surface of the first impurity region. The second metal silicide pattern may make contact with an upper surface of the second impurity region.

Abstract: A material for use in electronic circuits. The material includes a thin layer of gallium nitride (GaN), the thin layer of GaN produced in a high-volume production setting without mechanical planarization having a thickness of as low as 10 nm and a defect density as low as 105 per cm2.

Abstract: Quantum dot (QD) gate FETs and the use of quantum dot (QD) gate FETs for the purpose of sensing analytes and proteins is disclosed and described. Analytes, proteins, miRNAs, and DNAs functionalized to the QDs change the charge density in the gate and hence the current-voltage characteristics. In one embodiment, QD-FETs, such as 3-state configurations, the binding of chemical and biological species change the drain current-gate voltage characteristics resulting in detection. In one embodiment, DNA sensing is done by its binding to an existing reference DNA functionalized on to quantum dots which are located in the gate region of the FET.

Abstract: A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order, and a surface of the second semiconductor layer away from the active layer is configured as the light emitting surface. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and the light emitting surface, and a cross section of each of the three-dimensional nano-structures is M-shaped.

Abstract: A light emitting diode including a substrate, a first semiconductor layer, an active layer, and a second semiconductor layer is provided. The substrate includes an epitaxial growth surface and a light emitting surface. The first semiconductor layer, the active layer and the second semiconductor layer is stacked on the epitaxial growth surface. The first semiconductor layer includes a first surface and a second surface, and the first surface is connected to the substrate. The active layer and the second semiconductor layer are stacked on the second surface in that order. A first electrode electrically is connected with the first semiconductor layer. A second electrode is electrically connected with the second semiconductor layer. A number of three-dimensional nano-structures are located on the surface of the first surface of the first semiconductor layer and aligned side by side, and a cross section of each of the three-dimensional nano-structure is M-shaped.

Abstract: Optoelectronic device including light-emitting means in the form of nanowires (2, 3) having a core/shell-type structure and produced on a substrate (11), in which said nanowires comprise an active zone (22, 32) including at least two types of quantum wells associated with different emission wavelengths and distributed among at least two different regions (220, 221; 320, 321) of said active zone, in which the device also includes a first electrical contact zone (15) on the substrate and a second electrical contact zone (16) on the emitting means, in which said second zone is arranged so that, as the emitting means are distributed according to at least two groups, the electrical contact is achieved for each of said at least two groups at a different region of the active zone, and the electrical power supply is controlled so as to obtain the emission of a multi-wavelength light.

Abstract: A light-emitting panel includes: a substrate; and a light-emitting functional multilayer formed on the substrate, wherein the light-emitting functional multilayer including a first functional layer and a second functional layer, a thickness of part of the first functional layer positioned in a first light-emitting region is smaller than a thickness of part of the first functional layer positioned in a second light-emitting region, a thickness of part of the second functional layer positioned in the first light-emitting region is greater than a thickness of part of the second functional layer positioned in the second light-emitting region, and when the light-emitting functional multilayer is viewed in a layering direction thereof, the first light-emitting region and the second light-emitting region are adjacent or distant from each other in a direction perpendicular to the layering direction, and each include a plurality of pixels that are each composed of a plurality of adjacent sub-pixels.

Abstract: An apparatus includes a substrate, a sequence of crystalline semiconductor layers on a planar surface of the substrate, and first and second sets of electrodes over the sequence. The sequence has a 2D quantum well therein. The first set of electrodes border opposite sides of a lateral region of the sequence and are controllable to vary a width of a non-depleted portion of the quantum well along the top surface. The second set of electrodes border channels between the lateral region and first and second adjacent lateral areas of the sequence and are controllable to vary widths of non-depleted segments of the quantum well in the channels. The electrodes are such that straight lines connecting the lateral areas via the channels either pass between one of the electrodes and the substrate or are misaligned to an effective [1 10] lattice direction of the sequence.

Abstract: A noble metal nanoparticle can be grown on a semiconductor substrate by contacting a predetermined region of the substrate with a solution including noble metal ions. The predetermined region of the semiconductor substrate can be exposed by applying a polymeric layer over the substrate selectively removing a portion of the polymeric layer. The nanoparticles can be prepared in a predetermined pattern. The nanoparticle can be formed with a barrier separating it from another nanoparticle on the substrate; for example, nanoparticle can be located in a pit etched in the substrate. The size and location of the nanoparticle can be stable at elevated temperatures.

Abstract: A semiconductor structure includes a silicon substrate; more than one bulk layer of group-III/group-V (III-V) compound semiconductor atop the silicon substrate; and each bulk layer of the group III-V compound is separated by an interlayer.

Abstract: A hexagonal boron nitride sheet having: a two-dimensional planar structure with a sp2 B—N covalent bond, a Van der Waals bond between boron-nitrogen layers, a root mean square surface roughness of about 2 nanometers or less, and a length of about 1 millimeter or greater.

Abstract: An water/alcohol soluble electron-injection/hole-blocking composite layer contains a conjugated polymer grafted with a side chain crown ether and with pseudo-metallic state of metal-ion stabilized by the crown ether (to reduce electron-injection barrier and facilitate electron transport), and a polymer with hole-blocking function. This composite layer is able to improve the performance of an organic light emitting diode with oxygen- and moisture-stable cathode (such as Al and Au), and the performance of an organic solar cell.

Abstract: A curved foil-shaped electro-optical product (1) is provided having at least a first region with a basis substrate layer (10) of a shrunken organic substance, having a convex side and a concave side and comprising at the convex side (12) of the basis substrate layer at least a further layer (20), the electro-optical product further comprising at least a second region with an electro-optical structure (20).

Abstract: Disclosed is an organic light emitting device having an improved light emitting quality, by which a leakage current generated between pixels when a current flows from one pixel to an adjacent pixel of a light emitting part may be prevented, making it possible to prevent undesired emission of light in the adjacent pixel and improve light emitting quality.

Abstract: An organic light-emitting diode including: a first mixed layer between an emission layer and a first electrode and including first and second compounds; a second mixed layer between the emission layer and the first mixed layer and including third and fourth compounds; a first charge generation layer between the first mixed layer and the first electrode and including the first and second compounds and a first charge generation material; a second charge generation layer between the first mixed layer and the second mixed layer and including the third and fourth compounds and a second charge generation material; and a buffer layer between the emission layer and the second mixed layer, the first and the third compounds are each independently a compound represented by Formula 1 below, and the second compound and fourth compounds are each independently a compound represented by Formula 2 below:

Abstract: A foldable thin film transistor (TFT) is provided, the foldable TFT including: a foldable substrate; source and drain electrodes interconnected on the foldable substrate; a channel layer including nanofibers of an organic semiconductor connecting the source and drain electrodes; a gate electrode electronically connected with the source and drain electrodes and the channel layer; and a gate insulating layer disposed between the channel layer and the gate electrode and comprising an ionic liquid and a resin.

Abstract: The present invention relates to a polymer memory device and to a production method for the same, and relates to a novel photocrosslinkable polymer compound able to be used in a polymer memory device, to a novel non-volatile memory device in which an active layer between an upper electrode and a lower electrode comprises a photocrosslinkable polyimide polymer, and to a production method for the same. In the polymer memory device, the photocrosslinkable polyimide polymer is used as an active layer.

Abstract: A pixel structure of electroluminescent display panel has a first sub-pixel region, a second sub-pixel region and a third sub-pixel region. The pixel structure of electroluminescent display panel includes a first organic light-emitting layer and a second organic light-emitting layer. The first organic light-emitting layer, which includes a first organic light-emitting material, is disposed at least in the first sub-pixel region and the second sub-pixel region. The second organic light-emitting layer, which includes a second organic light-emitting material and a third organic light-emitting material, is disposed at least in the second sub-pixel region and the third sub-pixel region. The first organic light-emitting layer and the second organic light-emitting layer overlap in the second sub-pixel region. The first sub-pixel region and the third sub-pixel region have different cavity lengths.

Abstract: Light-emitting devices are described herein.

Abstract: A pixel structure of an electroluminescent display panel includes a first sub-pixel region, a second sub-pixel region, a third sub-pixel region and a fourth sub-pixel region having different cavity lengths. The first sub-pixel region and the second sub-pixel region share a first organic light-emitting layer, which can generate a first primary color light in the first sub-pixel region, and a second primary color light in the second sub-pixel region. The third sub-pixel region and the fourth sub-pixel region share a second organic light-emitting layer, which can generate a third primary color light in the third sub-pixel region, and a fourth primary color light in the fourth sub-pixel region. The first primary color light, the second primary color light, the third primary color light and the fourth primary color light have different spectra of wavelength.

Abstract: Disclosed is a light emission element including, on a substrate having an insulative surface, a first electrode connected with a thin film transistor and an insulator covering the end of the first electrode, a layer containing an organic compound in contact with the first electrode, a second electrode in contact with the layer containing the organic compound. The first electrode has an inclined surface and the inclined surface reflects emitted light from the layer containing the organic compound. Further, a light absorbing multi-layered film absorbing external light is disposed on the portion of the first electrode covered with the insulator. The light absorbing multi-layered film comprising at least has a three-layered structure comprising a light transmitting film, a film partially absorbing light and a light transmitting film.