Abstract: A composition comprises a fluoropolymer such as an elastomeric fluoropolymer and at least 1 weight % of a fluoro-functionalized near-infrared radiation absorber. This composition can be formed into laser-engraveable layers for various elements that can be laser-engraved to provide relief images. The resulting laser-engraved elements can take various forms including flexographic printing members, and can be used to apply various inks to receiver materials in an imagewise fashion.

Abstract: A composition comprising: a first polycarbonate comprising a poly(siloxane-carbonate); a second polycarbonate different from the first polycarbonate; and optionally, a third polycarbonate different from the first and second polycarbonate; wherein the first polycarbonate is present in an amount effective to provide the siloxane units of in the first polycarbonate in an amount of at least 0.3 wt %, and the second polycarbonate is present in an amount effective to provide the bromine of the second polycarbonate in an amount of at least 7.8 wt %; and further wherein an article molded from the composition has an OSU integrated 2 minute heat release test value of less than 65 kW-min/m2 and a peak heat release rate of less than 65 kW/m2, and an E662 smoke test Dmax value of less than 200.

Abstract: An opening assembly for opening an IC socket includes a supporting member and an opening member. The IC socket comprises a main body and two covers engaging with the main body. The supporting member resists against one of the covers by a first external force pushing the supporting member toward the main body. The opening member is slidably assembled to the supporting member. The supporting member is configured for pulling the other one of the covers away from the main body by a second external force opposite to the first external force. The opening member and the supporting member cooperatively open the other one of the covers.

Abstract: It is disclosed that a labor-saving device for detection of no-load hand hoist motion, comprising a base, a stand pole, and a controller, a first cantilever beam, a second cantilever beam, a third cantilever beam, and a fourth cantilever beam being sequentially disposed in single vertical plane from top to bottom of the stand pole, which is characterized in that a electric hoist being disposed below the first cantilever beam; a pair of first guide unit being respectively disposed at two opposite laterals of the second cantilever beam; a driving unit including a motor, a stand plate, and an actuator being coaxially disposed in series from internal to external, being disposed above the third cantilever beam; and a pair of second guide unit are respectively disposed at two opposite laterals of the fourth cantilever beam.

Abstract: A road barrier comprising a support (101) to which a transverse beam (102) is connected via a spacer (110) such that upon impact the transverse beam (102) moves towards the support (101). The spacer (110) is movable upon impact and coupled, via coupling means (130, 150, 160, 170), with a rotatable energy absorber (140) mounted below the transverse beam (102) and comprising at least one rotor (142, 143) for absorbing in rotational movement at least part of the kinetic energy imparted to the transverse beam (102).

Abstract: A fence post assembly comprises a pre-fabricated concrete footer, a cap plate attached to a surface end of said pre-fabricated concrete footer, a rigid support rod extending upwardly from said pre-fabricated concrete footer and through said cap plate, and a fence post having a blind hole through a bottom end thereof. The fence post being downwardly positioned over said rigid support rod with said rigid support rod disposed within said blind hole and said bottom end engaged with said cap plate. And, a plurality of fence post withdrawal preventing members that projecting from said rigid support rod and are engaged with said fence post so as to prevent withdrawing said rigid support rod from said blind hole.

Abstract: An anchoring panel for a sport wall system with a front side facing an interior of the sport wall system, a back side, a flange extending from and rigidly fixed to the back side, a top side, a bottom side, and a first and second end wall is provided. Each of the first and second end walls include interlocking elements for interlocking with a first or second end of another panel in the sport wall system, the interlocking elements comprising at least a male knob extending towards the bottom side of the anchoring panel and configured to be insertable into a panel recess of the another panel in the sport wall system.

Abstract: A mounting for a support post of a safety system has a cylindrical stem to be removably received in a cylindrical socket of an anchor device to be secured to a structure, and a connector enabling connection to the support post of the safety system. The connector is articulated with respect to the cylindrical stem to be adjustable over a range of attitude orientations with respect to the cylindrical stem and a securing device secures the connector at a specific attitude orientation with respect to the cylindrical stem. The mounting may be used in a safety guardrail system for working at height, with a vacuum anchor and a support post to which the guardrail is mounted. The support post is mounted to the vacuum anchor by the articulated mounting to enable the orientation angle of the support post to be adjusted with respect to the anchor device.

Abstract: A heater for a phase change memory may be thrilled by depositing a first material into a trench such that the material is thicker on the side wall than on the bottom of the trench. In one embodiment, because the trench side walls are of a different material than the bottom, differential deposition occurs. Then a heater material is deposited thereover. The heater material may react with the first material at the bottom of the trench to make Ohmic contact with an underlying metal layer. As a result, a vertical heater may be formed which is capable of making a small area contact with an overlying chalcogenide material.

Abstract: A phase change memory structure, including a substrate having a cavity extending from a surface of the substrate into an interior region thereof, wherein the cavity is bounded by side wall surface, wherein the cavity is coated on the side wall surface with a film of phase change memory material defining a core that is at least partially filled with dielectric material such as alumina. Such phase change memory structure can be fabricated in a substrate containing a cavity closed at one end thereof with a bottom electrode, by a method including: conformally coating sidewall surface of the cavity and surface of the bottom electrode closing the cavity, with a phase change memory material film, to form an open core volume bounded by the phase change memory material film; at least partially filling the open core volume with alumina or other dielectric material; and forming a top electrode at an upper portion of the cavity.

Abstract: According to one embodiment, the semiconductor device includes a substrate, and an interlayer insulating film that is provided with a plug hole, formed on the substrate. Additionally, the device includes a plug layer formed within the plug hole, a heater layer formed on the plug layer within the plug hole, and a phase change film formed on the heater layer within the plug hole. The device additionally includes a wiring layer formed on the phase change film and the interlayer insulating film.

Abstract: A system that incorporates teachings of the subject disclosure may include, for example, a method for depositing a first material that substantially covers a nanoheater, applying a signal to the nanoheater to remove a first portion of the first material covering the nanoheater to form a trench aligned with the nanoheater, depositing a second material in the trench, and removing a second portion of the first material and a portion of the second material to form a nanowire comprising a remaining portion of the second material covering the nanoheater along the trench. Additional embodiments are disclosed.

Abstract: A phase change memory cell has first and second electrodes having phase change material there-between. The phase change memory cell is devoid of heater material as part of either of the first and second electrodes and being devoid of heater material between either of the first and second electrodes and the phase change material. A method of forming a memory cell having first and second electrodes having phase change material there-between includes lining elevationally inner sidewalls of an opening with conductive material to comprise the first electrode of the memory cell. Elevationally outer sidewalls of the opening are lined with dielectric material. Phase change material is formed in the opening laterally inward of and electrically coupled to the conductive material in the opening. Conductive second electrode material is formed that is electrically coupled to the phase change material. Other implementations are disclosed.

Abstract: A phase change memory cell includes a first electrode having a cylindrical portion. A dielectric material having a cylindrical portion is longitudinally over the cylindrical portion of the first electrode. Heater material is radially inward of and electrically coupled to the cylindrical portion of the first electrode. Phase change material is over the heater material and a second electrode is electrically coupled to the phase change material. Other embodiments are disclosed, including methods of forming memory cells which include first and second electrodes having phase change material and heater material in electrical series there-between.

Abstract: A memory element can include a first electrode; a second electrode; and a memory material programmable between different resistance states, the memory material disposed between the first electrode and the second electrode and comprising a solid electrolyte with at least one modifier element formed therein; wherein the first electrode is an anode electrode that includes an anode element that is ion conductible in the solid electrolyte, the anode element being different than the modifier element.

Abstract: A variable resistive element configured to reduce a forming voltage while reducing a variation in forming voltage among elements, a method for producing it, and a highly integrated nonvolatile semiconductor memory device provided with the variable resistive element are provided. The variable resistive element includes a resistance change layer (first metal oxide film) and a control layer (second metal oxide film) having contact with a first electrode sandwiched between the first electrode and a second electrode. The control layer includes a metal oxide film having a low work function (4.5 eV or less) and capable of extracting oxygen from the resistance change layer. The first electrode includes a metal having a low work function similar to the above metal, and a material having oxide formation free energy higher than that of an element included in the control layer, to prevent oxygen from being thermally diffused from the control layer.

Abstract: A variable resistance memory device includes a selection transistor, which includes a first doped region and a second doped region, a vertical electrode coupled to the first doped region of the selection transistor, a bit line coupled to the second doped region of the selection transistor, a plurality of word lines stacked on the substrate along a sidewall of the vertical electrode, variable resistance patterns between the word lines and the vertical electrode, and an insulating isolation layer between the word lines. The variable resistance patterns are spaced apart from each other in a direction normal to a top surface of the substrate by the insulating isolation layer.

Abstract: Silicon nanocrystal inks and films, and methods of making and using silicon nanocrystal inks and films, are disclosed herein. In certain embodiments the nanocrystal inks and films include halide-terminated (e.g., chloride-terminated) and/or halide and hydrogen-terminated nanocrystals of silicon or alloys thereof. Silicon nanocrystal inks and films can be used, for example, to prepare semiconductor devices.

Abstract: A method of forming a nanowire structure is disclosed. The method comprises applying on a surface of carrier liquid a layer of a liquid composition which comprises a surfactant and a plurality of nanostructures each having a core and a shell, and heating at least one of the carrier liquid and the liquid composition to a temperature selected such that the nanostructures are segregated from the surfactant and assemble into a nanowire structure on the surface.

Abstract: Described is a lateral field emission device emitting electrons in parallel with respect to a substrate. Electron emission materials having a predetermined thickness are arranged in a direction with respect to the substrate on a supporting portion. An anode is disposed on a side portion of the substrate, the anode corresponding to the electron emission materials.

Abstract: A semiconductor light emitting device includes a substrate and a first epitaxial structure over the substrate. The first epitaxial structure includes a first doped layer, a first light emitting layer, and a second doped layer. The first doped layer includes a first dopant type and the second doped layer includes a second dopant type. A second epitaxial structure includes a third doped layer, a second light emitting layer, and a fourth doped layer. An adhesive layer is between the first epitaxial structure and the second epitaxial structure. One or more posts are located in the adhesive layer.

Abstract: According to one embodiment, a semiconductor light emitting device includes a first nitride semiconductor layer, a nitride semiconductor light emitting layer, a second nitride semiconductor layer, a p-side electrode, and an n-side electrode. The nitride semiconductor light emitting layer is provided on the p-side region of the second face of the first nitride semiconductor layer. The second nitride semiconductor layer is provided on the nitride semiconductor light emitting layer. The p-side electrode is provided on the second nitride semiconductor layer. The n-side electrode is provided on the n-side region of the second face of the first nitride semiconductor layer. The nitride semiconductor light emitting layer has a first concave-convex face in a side of the first nitride semiconductor layer, and a second concave-convex face in a side of the second nitride semiconductor layer.

Abstract: The present disclosure provides a light emitting diode and a method of manufacturing the same. The light emitting diode includes a graphene layer on a second conductive semiconductor layer and a plurality of metal nanoparticles formed on some region of the graphene layer, whereby adhesion between the second conductive semiconductor layer comprised of an inorganic material and the graphene layer is enhanced, thereby securing stability and reliability of the light emitting diode. In addition, the light emitting diode allows uniform spreading of electric current, thereby allowing stable emission of light through a surface area of the light emitting diode.

Abstract: Provided are a compound semiconductor device and a manufacturing method thereof. A substrate and a graphene oxide layer are provided on the substrate. A first compound semiconductor layer is provided on the graphene oxide layer. The first compound semiconductor layer is selectively grown from the substrate exposed by the graphene oxide.

Abstract: A single crystalline silicon carbide layer can be grown on a single crystalline sapphire substrate. Subsequently, a graphene layer can be formed by conversion of a surface layer of the single crystalline silicon layer during an anneal at an elevated temperature in an ultrahigh vacuum environment. Alternately, a graphene layer can be deposited on an exposed surface of the single crystalline silicon carbide layer. A graphene layer can also be formed directly on a surface of a sapphire substrate or directly on a surface of a silicon carbide substrate. Still alternately, a graphene layer can be formed on a silicon carbide layer on a semiconductor substrate. The commercial availability of sapphire substrates and semiconductor substrates with a diameter of six inches or more allows formation of a graphene layer on a commercially scalable substrate for low cost manufacturing of devices employing a graphene layer.

Abstract: Radiation-emitting semiconductor devices include a first base region comprising an n-type III-V semiconductor material, a second base region comprising a p-type III-V semiconductor material, and a multi-quantum well structure disposed between the first base region and the second base region. The multi-quantum well structure includes at least three quantum well regions and at least two barrier regions. An electron hole energy barrier between a third of the quantum well regions and a second of the quantum well regions is less than an electron hole energy barrier between the second of the quantum well regions and a first of the quantum well regions. Methods of forming such devices include sequentially epitaxially depositing layers of such a multi-quantum well structure, and selecting a composition and configuration of the layers such that the electron hole energy barriers vary across the multi-quantum well structure.

Abstract: An epitaxial structure is provided. The epitaxial structure includes a substrate, an epitaxial layer and a graphene layer. The epitaxial layer is located on the substrate. The graphene layer is located between the substrate and the epitaxial layer. The graphene layer can be a graphene film or graphene powder. The epitaxial structure can be made by: providing a substrate having an epitaxial growth surface, placing a graphene layer on the epitaxial growth surface, and epitaxially growing an epitaxial layer on the epitaxial growth surface.

Abstract: Embodiments of the present invention provide transistor structures having strained channel regions. Strain is created through lattice mismatches in the source and drain regions relative to the channel region of the transistor. In embodiments of the invention, the transistor channel regions are comprised of germanium, silicon, a combination of germanium and silicon, or a combination of germanium, silicon, and tin and the source and drain regions are comprised of a doped III-V compound semiconductor material. Embodiments of the invention are useful in a variety of transistor structures, such as, for example, trigate, bigate, and single gate transistors and transistors having a channel region comprised of nanowires or nanoribbons.

Abstract: A photodetector using graphene includes: a gate electrode; a graphene channel layer which is opposite to and spaced apart from the gate electrode and does not have ?-binding; a first electrode which contacts a first side of the graphene channel layer; and a second electrode which contacts a side of the graphene channel layer, where the first and second sides are opposite to each other, and where the graphene channel layer includes a first graphene layer and a first nanoparticle disposed on the first graphene layer. The first graphene layer may include a single graphene layer, or the first graphene layer may include a plurality of single graphene layers, which is sequentially stacked and does not have ?-binding.

Abstract: Provided is a field effect transistor including a drain region, a source region, and a channel region. The field effect transistor may further include a gate electrode on or surrounding at least a portion of the channel region, and a gate dielectric layer between the channel region and the gate electrode. A portion of the channel region adjacent the source region has a sectional area smaller than that of another portion of the channel region adjacent the drain region.

Abstract: A method of fabricating a FET device is provided which includes the following steps. Nanowires/pads are formed in a SOI layer over a BOX layer, wherein the nanowires are suspended over the BOX. A HSQ layer is deposited that surrounds the nanowires. A portion(s) of the HSQ layer that surround the nanowires are cross-linked, wherein the cross-linking causes the portion(s) of the HSQ layer to shrink thereby inducing strain in the nanowires. One or more gates are formed that retain the strain induced in the nanowires. A FET device is also provided wherein each of the nanowires has a first region(s) that is deformed such that a lattice constant in the first region(s) is less than a relaxed lattice constant of the nanowires and a second region(s) that is deformed such that a lattice constant in the second region(s) is greater than the relaxed lattice constant of the nanowires.

Abstract: Charge transport compounds are provided. The compounds are useful in optoelectronic devices that include the compounds incorporated as a charge-transport layer. Methods for forming films of the compounds are also provided. Additionally, methods are provided for forming films of a charge-transport layer on an active layer of an optoelectronic device. The films are formed from a solution with solubility orthogonal to the solubility of the active layer, such that the active layer is not solvated during deposition of the charge-transport layer.

Abstract: An organic light-emitting diode and a display device employing the same are provided. The organic light-emitting diode includes a substrate; a cathode disposed on the substrate; an electron injection layer disposed on the cathode, wherein the electron injection layer includes a low work function metal layer and a metal complex layer having carrier injection capability; a light-emitting layer disposed on the electron injection layer; and an anode disposed on the light-emitting layer.

Abstract: To increase light-extraction efficiency and simplify manufacturing process. An organic EL panel includes: first electrode reflecting incident light; second electrode transmitting incident light therethrough; organic light-emitting layer emitting light of corresponding color among RGB colors; first functional layer including charge injection/transport layer and at least one other layer, and disposed between the first electrode and the light-emitting layer; and second functional layer disposed between the second electrode and the light-emitting layer. The first functional layers of the RGB colors are equal in film thickness, the organic light-emitting layers of the RGB colors are equal in optical distance from the first electrode, the second functional layers of the RGB colors are equal in film thickness, the organic light-emitting layers of the RGB colors are equal in optical distance from the second electrode, and the organic light-emitting layers of the RGB colors differ in film thickness.

Abstract: A first product as disclosed herein includes multiple devices, such as OLEDs, which are moveably connected to one another. The devices may be moveable from a first position in which they are stacked, closed, rolled, or the like, to a second expanded position in which they may be usable together as a single device. Active areas of the devices may be disposed within 3 mm from each adjacent or included active area when the device is in the first position, the second position, or both. Each active device may include a barrier film that covers at least a portion of the substrate and/or the active area of one or more of the devices.

Abstract: An organic compound having excellent electron transport property and hole blocking property as a material for a highly efficient organic EL device, and also provide a highly efficient organic EL device using the compound. This invention relates to a compound having a triazole ring structure to which a substituted pyridyl group is bonded, represented by the following general formula (1), and to an organic electroluminescence device comprising the compound: wherein Ar1 and Ar2, R1, R2, R3, R4, R5, R6, R7, R8, R9 and R10, and m are as defined in the specification.

Abstract: Embodiments in accordance with the present invention relate generally to the use of polycycloolefinic polymers as a structure defining material in organic electronic devices, and more specifically to separators, insulating structures or bank structures of such devices and to organic electronic devices comprising such structures, to processes for preparing such structures and to organic electronic devices encompassing such structures.

Abstract: The invention provides an OLED device with improved light out-coupling comprising an electroluminescent layer stack (2) on top of a substrate (1), where the electroluminescent layer stack (2) comprises an organic light-emitting layer stack (6) with one or more organic layers sandwiched between a first electrode (3) facing towards the substrate (1) and a second electrode (7) to apply a driving voltage to the organic light-emitting layer stack (6), and a first electron transport layer stack (4a) arranged between the organic light emitting layers stack (6) and the second electrode (7), wherein the electron transport layer stack (4a) comprises an electron transport layer (41) made of a first electron transport material having a low refractive index and at least one n-doped layer (40, 42). The invention further relates to a method to manufacture these OLED devices.

Abstract: An electroluminescence generating device comprising a channel of organic semiconductor material, said channel being able to carry both types of charge carriers, said charge carriers being electrons and holes; an electron electrode, said electron electrode being in contact with said channel and positioned on top of a first side of said channel layer or within said channel layer, said electron electrode being able to inject electrons in said channel layer; a hole electrode, said hole electrode being spaced apart from said electron electrode, said hole channel and positioned on top of within said channel layer, said hole electrode being able to inject holes into said channel; a control electrode positioned on said first side or on a second side of said channel; whereby light emission of said electroluminescence generating device can be acquired by applying an electrical potential difference between said electron electrode and said hole electrode.

Abstract: A fused aromatic ring derivative shown by the following formula (1): wherein Ra and Rb are independently a hydrogen atom or a substituent, p is an integer of 1 to 8 and q is an integer of 1 to 11, when p is 2 or more, plural Ras may be independently the same or different and adjacent Ras may form a ring, when q is 2 or more, plural Rbs may be independently the same or different, L1 is a single bond, or a substituted or unsubstituted divalent linking group, and Ar1 is a substituted or unsubstituted aryl group having 6 to 50 ring carbon atoms or a substituted or unsubstituted heteroaryl group having 5 to 50 ring atoms, provided that the substituent of L1, the substituent of Ar1, Ra and Rb contain no substituted or unsubstituted amino group.

Abstract: A compound for an organic optoelectronic device, an organic light emitting diode including the same, and a display device including the organic light emitting diode, the compound being represented by the following Chemical Formula 1:

Abstract: A light emitting device having a plastic substrate is capable of preventing the substrate from deterioration with the transmission of oxygen or moisture content. The light emitting device has light emitting elements formed between a lamination layer and an inorganic compound layer that transmits visual light, where the lamination layer is constructed of one unit or two or more units, and each unit is a laminated structure of a metal layer and an organic compound layer. Alternatively, each unit is a laminated structure of a metal layer and an organic compound layer, wherein the inorganic compound layer is formed so as to cover the end face of the lamination layer. In the present invention, the lamination layer is formed on the primary surface of the plastic substrate, so that a flexible substrate structure can be obtained.

Abstract: To provide a method of efficiently manufacturing an organic light-emitting element with excellent light-emitting characteristics by application, the method includes: preparing ink and filling an inkjet device having an ink ejection nozzle with ink; preparing a substrate having a base layer including a first electrode; and positioning the inkjet device above the substrate, and causing the inkjet device to eject a drop of the ink onto the base layer, wherein, in the preparation of the ink, a value Z denoting a reciprocal of the Ohnesorge number Oh determined by density ? (g/m3), surface tension ? (mN·m), and viscosity ? (mPa·s) of the ink and a diameter r (mm) of the ink ejection nozzle satisfies Formula 1, in the ejection of the drop of the ink, speed V (m/s) of the ejected drop satisfies Formula 2, and the value Z and the speed V (m/s) satisfy Formula 3.

Abstract: The present invention aims at providing an organic EL device that emits light by an alternating current, has a simple structure and provides little increase of production processes, while downsizing an overall configuration and a simplifying a method for producing said organic EL device. The organic EL device includes a power feeding part and an organic-EL-element forming part. The organic-EL-element forming part includes a plurality of unit EL elements formed on a substrate. There is provided a plurality of series-connected parts each formed by a plurality of the unit EL elements that are electrically connected in series in a forward direction. A plurality of the series-connected parts are electrically connected to the power feeding part in parallel. The series-connected parts that are connected in parallel include a series-connected part that is connected to the power feeding part so as to have a reverse polarity.

Abstract: An organic EL display panel offering improved luminance includes: a substrate; pixel electrodes arranged in rows and columns; an insulating film coating the confronting edges of pixel electrodes adjacent in a column direction; banks each elongated in the column direction over a gap between pixel electrodes adjacent in the row direction; a hole transport layer in a gap between the banks; an organic light-emitting layer over the hole transport layer; and a common electrode over the organic light-emitting layer. Light is emitted from a first light-emitting portion and second light-emitting portions of the light-emitting layer. The first light-emitting portion is a portion above the pixel electrodes excluding where the insulating film is disposed. The second light-emitting portions are portions above both the pixel electrodes and the insulating film.

Abstract: Provided is an organic electroluminescent element that maintains higher hole injection characteristics than conventional organic EL elements. This organic electroluminescent element has an organic compound layer sandwiched between a positive electrode and negative electrode. The organic compound layer contains at least a light emitting layer and charge generating layer and is characterized by (1) having a charge generating layer formed from at least one layer between the positive electrode and the light emitting layer and (2) containing an organic metal complex in at least one of the charge generating layer.

Abstract: The present invention relates to aromatic nitrogen heterocycles, and to electronic devices, in particular organic electroluminescent devices, which comprise these aromatic nitrogen heterocycles, in particular in a hole-injection layer and/or in a hole-transport layer and/or in a hole-blocking layer and/or in an electron-transport layer and/or in an emitting layer.

Abstract: Provided is an organic EL light emitting element that prevents variations in brightness caused by resistance in a transparent electrode layer without a separate auxiliary electrode being provided. This organic EL light emitting element has a transparent conductive layer, organic light emitting unit layer, and metal layer in that order on a transparent substrate. The metal layer is divided into negative electrode regions and auxiliary electrode regions that are electrically separated by a metal layer dividing channel. In the auxiliary electrode regions, the metal layer and transparent electrode layer are electrically connected via first type connecting channels, which are opening parts in the organic light emitting unit layer. The dividing channels and connecting channels are preferably formed by laser beam irradiation.

Abstract: On the TFT substrate (10), a vapor deposition layer is formed by use of a vapor deposition device (50) which includes (i) a vapor deposition source (85) having injection holes (86) and (ii) a vapor deposition mask (81) having openings (82) through which vapor deposition particles injected from the injection holes (86) are deposited so as to form the vapor deposition layer. The TFT substrate (10) has a plurality of pixels two-dimensionally arranged in a pixel region (AG), and terminals of a plurality of wires (14), which are electrically connected with the plurality of pixels, are gathered outside a vapor deposition layer formation region.

Abstract: In order to improve an external quantum efficiency of an organic light-emitting element, a first light extraction layer is formed over the surface of a second substrate on the side where the second substrate is present, a second light extraction layer is formed over the surface of the second substrate on the other side, the first and second light extraction layers contain fine particles and a binder, the average particle diameter of the fine particles contained in the first and second light extraction layers are 0.05 ?m or more and 2 ?m or less and 1 ?m or more and 10 ?m or less, respectively, and an optical length L1 between the emission point of the light emitting layer and a first electrode satisfies (2m?155/180)?0/4/cos 35°?L1?(2m?155/180)?0/4/cos 50°, where ?0 is a center emission wavelength of the light emitting layer and m is an integer of 1 or more.