Abstract: A paste for a photoelectric conversion layer used in an X-ray detector includes photoconductive particles, an organic polymer binder, a first organic solvent to dissolve the organic polymer binder, and a second organic solvent. The second organic solvent has a boiling point in a range of between about 150° C. and about 210° C., inclusive.

Abstract: A solid-body X-ray image detector and method of manufacturing the same are disclosed. The detector has a circular surface area arrangement of CCD or CMOS detector pixels on a substrate, a scintillator arranged on the substrate, and a circular detector surface area, wherein the substrate comprises a single, substantially circular silicon wafer and the detector surface area takes up the surface area of the silicon wafer up to a narrow edge region.

Abstract: A radiological image detection apparatus includes: a scintillator which is formed out of a group of columnar crystals in which crystals of a fluorescent material emitting fluorescence when irradiated with radiation have grown into columnar shapes; and a photodetector which is provided on a radiation entrance side of the scintillator and which detects the fluorescence emitted by the scintillator as an electric signal. A high activator density region whose activator density is higher than activator density of a region on an opposite side to the radiation entrance side in the scintillator is provided and disposed on the photodetector side in the scintillator.

Abstract: A non-visible particle detection device includes an optical module capable of converting an ionizing radiation into visible light. The optical module includes has an attachment unit that is configured to removably attach the optical module to the image capturing module of a mobile device. The image capturing module generates a photon digital image based on the photons converted from the ionizing radiation. The mobile device can be implemented with a radiation dose determining module to execute a radiation dose equivalent calculation method. Based on the pixel brightness analysis of the photon digital image, the radiation equivalent dose can be determined. This method sums up the total brightness of all pixels in the images, determines whether the total brightness is smaller than the minimum effective brightness, and determines the radiation equivalent dose when the total brightness is equal to or larger than the minimum effective brightness.

Abstract: A material according to one embodiment exhibits an optical response signature for neutrons that is different than an optical response signature for gamma rays, said material exhibiting performance comparable to or superior to stilbene in terms of distinguishing neutrons from gamma rays, wherein the material is not stilbene, the material comprising a molecule selected from a group consisting of: two or more benzene rings, one or more benzene rings with a carboxylic acid group, one or more benzene rings with at least one double bound adjacent to said benzene ring, and one or more benzene rings for which at least one atom in the benzene ring is not carbon.

Abstract: A dispersed release of neutrons is generated from a source. A portion of this dispersed neutron release is reflected by surfaces of a plurality of nested, axisymmetric mirrors in at least an inner mirror layer and an outer mirror layer, wherein the neutrons reflected by the inner mirror layer are incident on at least one mirror surface of the inner mirror layer N times, wherein N is an integer, and wherein neutrons reflected by the outer mirror are incident on a plurality of mirror surfaces of the outer layer N+i times, where i is a positive integer, to redirect the neutrons toward a target. The mirrors can be formed by a periodically reversed pulsed-plating process.

Abstract: An X-ray imaging apparatus, which acquires an X-ray photographic image of an subject and outputs the X-ray photographic image to a plurality of output apparatuses, determines, as an output region to a first output apparatus, either an extracted irradiated region from an X-ray photographic image or a partial region selected from the X-ray photographic image by an user. When the size of the output region to the first output apparatus is not larger than an image size to be output to a second output apparatus, the output region to the first output apparatus is determined as an output region to the second output apparatus. When the output region to the first output apparatus is larger than the image size, a region corresponding to the image size is extracted from the output region to the first output apparatus as an output region to the second output apparatus.

Abstract: A system, method, device, and process for making and using an electromagnetic-sensitive biosensor on a biosensor disk to identify and classify an analyte in a sample. The biosensor of the biosensor disk is exposed to a sample containing analytes and a desired analyte adheres to the biosensor. The biosensor is exposed to microspheres that adhere to the analyte. The microspheres cause a detectable change to electromagnetic radiation incident upon the biosensor disk The biosensor disk is rotated during operation and an electromagnetic emitter directs an electromagnetic radiation beam at the biosensor disk. The returned electromagnetic radiation from the biosensor disk is received by a sensor and converted into a signal to indicate the presence of the desired analyte in the sample.

Abstract: A method of operating a focused ion beam device having a gas field ion source is described. According to some embodiments, the method includes emitting an ion beam from a gas field ion source, providing an ion beam column ion beam energy in the ion beam column which is higher than the final beam energy, decelerating the ion beam for providing a final beam energy on impingement of the ion beam on the specimen of 1 keV to 4 keV, and imaging the specimen.

Abstract: There is provided a charged particle beam treatment planning device that creates a treatment plan and is connected to a charged particle beam irradiation apparatus that includes a scanning electromagnet, which scans a charged particle beam, and a degrader, which adjusts a range of the charged particle beam by reducing the energy of the charged particle beam, and irradiates an irradiation object with the charged particle beam. The charged particle beam treatment planning device includes a control unit that adjusts the dose of the charged particle beam, which is irradiated to a predetermined position of the irradiation object, on the basis of a passing distance of the charged particle beam within the degrader calculated using a deflection angle of the charged particle beam.

Abstract: A method of investigating a sample using a charged-particle microscope is disclosed. By directing an imaging beam of charged particles at a sample, a resulting flux of output radiation is detected from the sample. At least a portion of the output radiation is examined using a detector, the detector comprising a Solid State Photo-Multiplier. The Solid State Photo-Multiplier is biased so that its gain is matched to the magnitude of output radiation flux.

Abstract: A method and apparatus for sterilization of webs and products made therefrom using electron beams (ebeams) is provided. A controller is configured to modulate an ebeam to ensure that a non-continuously moving web is sterilized within a desired range of exposure. During sterilization in place operations, manifolds are configured to operate to ensure that sterilants do not enter an irradiation zone to prevent damage to ebeam emitters.

Abstract: Provided are devices and methods for quantifying a surface's cleanliness relative to a contaminant. Such devices and methods may comprise and/or use a source of interrogating radiation to which the contaminant is responsive, a means for directing the interrogating radiation, a detector, and an analyzer. Radiation emitted from the source is directed by the radiation means toward an article having the surface or comprising a surface cleaner that may hold the contaminant. The detector detects radiation from the article produced in response to the interrogating radiation by the contaminant, e.g., fluorescent or phosphorescent radiation, and generate a corresponding signal that is compared by the analyzer relative to an electronic standard that corresponds to the surface in an acceptably clean state so as to quantify the surface's cleanliness.

Abstract: The present invention relates to a fluorescent dye-incorporated silica material. A fluorescent dye is covalently bonded to a silica matrix. The invention also provides for a method for verifying the authenticity of a product, wherein the fluorescent silica material is present in or on a product, and the material is tested for fluorescence or structure.

Abstract: A flow cytometer including a laser, indexing structure, adjustment structure, and sensor structure. The cytometer is conventionally used with a removable microfluidic cassette, which is installed at a first position that is enforced by the indexing structure. The adjustment structure changes a relative position between an interrogation aperture of the cassette and the laser beam. Feedback from the sensor structure is used to optimize propagation of the laser through the interrogation aperture to reduce (and hopefully eliminate) autofluorescence caused by beam impingement onto the cassette.

Abstract: A scintillator panel exhibiting enhanced moisture resistance is disclosed, comprising a scintillator sheet provided on a substrate with a scintillator layer, and the whole of the scintillator sheet is covered with a protective layer and a space in which gas is capable of flowing is provided between the protective layer and the scintillator sheet.

Abstract: An ion beam irradiation method comprises calculating a scan voltage correction function with the maximum beam scan width depending on the measurement result of a beam current measurement device, calculating each of more than one scan voltage correction functions corresponding to each of scheduled beam scan widths depending on the calculated scan voltage correction functions while satisfying dose uniformity in the horizontal direction, measuring a mechanical Y-scan position during the ion implantation, changing the scan voltage correction function as a function of the measured mechanical Y-scan position so that the beam scan area becomes a D-shaped multistage beam scan area corresponding to an outer periphery of a half of the wafer to thereby reduce the beam scan width, and changing a mechanical Y-scan speed depending on the change of the measurement result of a side cup current measurement device to thereby keep the dose uniformity in the vertical direction.

Abstract: The present invention provides a hollow prism for detecting liquid level in the presence of an optical beam, including a hollow member, dielectric members sealed to the hollow member with one of the dielectric members arranged at an inclined angle to the other, a sealed hollow space disposed between said dielectric members, wherein an incident optical beam enters through the first dielectric member at normal incidence and exits as an emergent beam through the second dielectric member, and wherein the emergent optical beam remains undeviated when the hollow member not immersed in a liquid medium and the emergent beam suffers deviation when immersed in the liquid medium. The present invention also provides a fiber optic liquid level detector with the hollow prism for detecting liquid levels.

Abstract: A via-configurable circuit block may contain chains of p-type and n-type transistors that may or may not be interconnected by means of configurable vias. Configurable vias may also be used to connect various transistor terminals to a ground line, a power line and/or to various terminals that may provide connections outside of the circuit block.

Abstract: An ionic device includes a layer of an ionic conductor containing first and second species of impurities. The first species of impurity in the layer is mobile in the ionic conductor, and a concentration profile of the first species determines a functional characteristic of the device. The second species of impurity in the layer interacts with the first species within the layer to create a structure that limits mobility of the first species in the layer.

Abstract: A nonvolatile semiconductor memory device includes: a first interconnect; a second interconnect at a position opposing the first interconnect; and a variable resistance layer between the first interconnect and the second interconnect, the variable resistance layer being capable of reversibly changing between a first state and a second state by a voltage applied via the first interconnect and the second interconnect or a current supplied via the first interconnect and the second interconnect, the first state having a first resistivity, the second state having a second resistivity higher than the first resistivity. Wherein the variable resistance layer has a compound of carbon and silicon as a main component and including hydrogen.

Abstract: A variable resistance memory device includes a selection transistor, which includes a first doped region and a second doped region, a vertical electrode coupled to the first doped region of the selection transistor, a bit line coupled to the second doped region of the selection transistor, a plurality of word lines stacked on the substrate along a sidewall of the vertical electrode, variable resistance patterns between the word lines and the vertical electrode, and an insulating isolation layer between the word lines. The variable resistance patterns are spaced apart from each other in a direction normal to a top surface of the substrate by the insulating isolation layer.

Abstract: A semiconductor storage device according to an embodiment includes a first conductive layer, a variable resistance layer, an electrode layer, a first liner layer, a stopper layer, and a second conductive layer. The first liner layer is configured by a material having a property for canceling an influence of an orientation of a lower layer of the first liner layer, the property of the first liner layer being superior compared with that of the stopper layer. The stopper layer is acted upon by an internal stress in a compressive direction at room temperature.

Abstract: Some embodiments include memory cells which have multiple programmable material structures between a pair of electrodes. One of the programmable material structures has a first edge, and another of the programmable material structures has a second edge that contacts the first edge. Some embodiments include methods of forming an array of memory cells. First programmable material segments are formed over bottom electrodes. The first programmable material segments extend along a first axis. Lines of second programmable material are formed over the first programmable material segments, and are formed to extend along a second axis that intersects the first axis. The second programmable material lines have lower surfaces that contact upper surfaces of the first programmable material segments. Top electrode lines are formed over the second programmable material lines.

Abstract: A resistive memory apparatus provides resistive memory material between conductive traces on a substrate or in a film stack on a substrate. The resistive memory apparatus may provide a sealed cavity or may utilize material obviating the need for the cavity. Methods and materials utilized to form the resistive memory apparatus are compatible with current microelectronic fabrication techniques. The resistive memory apparatus is nonvolatile or requires no power to maintain a programmed state. The resistive memory device may also be directly integrated with other microelectronic components.

Abstract: Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises a resistive material that is configured to improve the switching performance and lifetime of the resistive switching memory element. The electrical properties of the current limiting layer are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the resistive switching memory element found in the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel nitride that is a current limiting material that is disposed within a resistive switching memory element in a nonvolatile resistive switching memory device.

Abstract: For decreasing a recording current and suppressing a cross erase simultaneously, a three-dimensional phase-change memory for attaining higher sensitivity and higher reliability by the provision of a chalcogenide type interface layer is provided, in which an electric resistivity, a thermal conductivity, and a melting point of the material of the interface layer are selected appropriately, thereby improving the current concentration to the phase-change material and thermal and material insulation property with Si channel upon writing.

Abstract: A high-voltage electronic device comprising high-voltage electrodes, located in a dielectric envelope with an internal surface coated with a material having a conductivity which is greater than the conductivity of the envelope, characterized in that the areas subject to high field strength are coated with composite material, based on a polycrystalline material with a bulk conductivity of particles 10?9 to 10?13 Ohm?1 cm?1, each of which contains a surface nanolayer of bonding inorganic material. The high-voltage electrodes may be placed in a vacuum envelope and fixed on coated insulators. Preferred coating materials include materials from a group of materials comprising; oxides of chromium, boron or zirconium in the form of polycrystalline porous substance with a particle size of 30 nm-30 microns, connected to each other with an inorganic material, for instance silicon oxide (SiO2) with a layer thickness not more than 100 nm.

Abstract: There are disclosed a group III nitride nanorod light emitting device and a method of manufacturing thereof. The group III nitride nanorod light emitting device includes a substrate, an insulating film formed on the substrate, and including a plurality of openings exposing parts of the substrate and having different diameters, and first conductive group III nitride nanorods having different diameters, respectively formed in the plurality of openings, wherein each of the first conductive group III nitride nanorods has an active layer and a second conductive semiconductor layer sequentially formed on a surface thereof.

Abstract: A semiconductor optical modulator includes a first n-type semiconductor region, a first p-type semiconductor region, an i-type semiconductor region, a second p-type semiconductor region, and a second n-type semiconductor region that constitute a stacked layer structure. The stacked layer structure includes a first cladding layer, a second cladding layer, and a core layer disposed between the first and second cladding layer. The first n-type semiconductor region and the first p-type semiconductor region form a first p-n junction disposed in an intermediate region between the first and second cladding layer. The second p-type semiconductor region and the second n-type semiconductor region form a second p-n junction disposed in the intermediate region or the second cladding layer. The intermediate region, the first n-type semiconductor region, and the second n-type semiconductor region include the core layer, the first cladding layer, and part or all of the second cladding layer, respectively.

Abstract: Strained gate-all-around semiconductor devices formed on globally or locally isolated substrates are described. For example, a semiconductor device includes a semiconductor substrate. An insulating structure is disposed above the semiconductor substrate. A three-dimensional channel region is disposed above the insulating structure. Source and drain regions are disposed on either side of the three-dimensional channel region and on an epitaxial seed layer. The epitaxial seed layer is composed of a semiconductor material different from the three-dimensional channel region and disposed on the insulating structure. A gate electrode stack surrounds the three-dimensional channel region with a portion disposed on the insulating structure and laterally adjacent to the epitaxial seed layer.

Abstract: An organic thin film transistor and a method for manufacturing the same is disclosed, which can improve the device properties by decreasing a contact resistance which occurs in a contact area between an organic semiconductor layer and source/drain electrodes. The organic thin film transistor includes a gate electrode formed on a substrate, a gate insulation layer formed on the gate electrode, source and drain electrodes overlapped with both edges of the gate electrode and formed on the gate insulation layer, an organic semiconductor layer formed on the gate insulation layer including the source/drain electrodes, a first adhesive layer having hydrophilic properties formed between the gate insulation layer and the source/drain electrodes, and a second adhesive layer having hydrophobic properties formed between the organic semiconductor layer and the gate insulation layer.

Abstract: An organic thin film transistor comprising: a substrate; a source electrode and a drain electrode disposed over the substrate with a channel region therebetween; a layer of organic semiconductor disposed in the channel region; a gate electrode; and a gate dielectric disposed between the layer of organic semiconductor and the gate electrode, wherein the gate dielectric comprises a cross-linked polymer and a fluorine containing polymer.

Abstract: An organic light emitting diode (OLED) display includes: a substrate including a first area and a second area; a first electrode at the first area of the substrate, and a first electrode at the second area of the substrate; a reflective electrode on the first electrode at the first area; a barrier rib on the substrate, the barrier rib having openings exposing the reflective electrode and the first electrode at the second area; an organic emission layer on the reflective electrode and the first electrode at the second area; a second electrode on the organic emission layer; and a reflective layer on the second electrode at the second area.

Abstract: An organic light emitting diode includes: a first electrode; a first hole transporting layer on the first electrode; a first emitting material layer on the first hole transporting layer, the first emitting material layer including a first host with a first dopant, wherein an energy level of a lowest unoccupied molecular orbital of the first dopant is higher than an energy level of a lowest unoccupied molecular orbital of the first host; a first electron transporting layer on the first emitting material layer; and a second electrode on the first electron transporting layer, wherein an energy level of each of the first hole transporting layer and the first electron transporting layer is higher than an energy level of a triplet state exciton of the first emitting material layer.

Abstract: It is known that a light-emitting element utilizing organic EL deteriorates due to moisture. Therefore, a sealing technique to prevent moisture permeation is important. A light-emitting device including a light-emitting element utilizing organic EL is manufactured over a support substrate having flexibility and a high heat dissipation property (e.g., stainless steel or duralumin), and the light-emitting device is sealed with a stack body having moisture impermeability and a high light-transmitting property or with glass having moisture impermeability and a high light-transmitting property and having a thickness greater than or equal to 20 ?m and less than or equal to 100 ?m.

Abstract: Provided is a light-emitting element having light emitting sections (17) that are distributed on a transparent substrate (11). Specifically, an electroluminescence element (10) includes the substrate having a bored part (16b) which is formed by recessing, below the light emitting sections, the surface of the substrate on a light emitting section side. By this configuration, the light-emitting element has a high light-emitting efficiency and exhibits required light distribution characteristics by controlling a direction of emitted light.

Abstract: An organic light emitting diode display, which includes: a first electrode; a second electrode facing the first electrode; and an emission layer interposed between the first electrode and the second electrode. Herein the first electrode includes: a first layer including a material having a work function of about 4.0 eV or less and an electron injection material; and a second layer including a material having a resistivity of about 10 ??cm or less. The first layer is disposed between the second layer and the emission layer.

Abstract: In order to provide an organic electroluminescence device with high luminous efficiency and good durability, the present invention provides a charge transporting material including a compound represented by Formula (Cz-1) wherein the content of a particular halogen-containing impurity in the charge transporting material is from 0.000% to 0.10% when the content is calculated as a proportion of the absorption intensity area of the impurity with respect to the total absorption intensity area of the charge transporting material, as measured by high-performance liquid chromatography at a measurement wavelength of 254 nm, and an organic electroluminescence device wherein the charge transporting material is included in an organic layer: wherein in Formula (Cz-1), each of R1 to R5 independently represents a particular atom or group; and each of n1 to n5 independently represents a particular integer.

Abstract: The invention provides an organic light-emitting diode which includes at least two electroluminescent layers (ELR, ELB), both of which are fluorescent or phosphorescent and emit at different wavelengths, as well as a hole- and electron-conducting buffer layer (T) arranged between the electroluminescent layers. The buffer layer is a bi-layer having an electron-transport layer (T2) and a hole-transport layer (T1), each one of the hole- and electron-transport layers being made of one or more materials in which the HOMO level(s) are comprised between or equal to the HOMO levels of the electroluminescent layers, and in which the LUMO levels are between or equal to the LUMO levels of said electroluminescent layers, with a tolerance of 0.3 eV.

Abstract: A static induction light emitting transistor comprising: on a substrate: a source electrode; a hole transporting layer in which a slit-shaped gate electrode is embedded; an equipotential layer; light emitting layer; and a transparent or semitransparent drain electrode, provided in this order. In this light emitting transistor, the drain electrode provided on the opposite side of the gate electrode, viewing from the light emitting layer, is transparent or semitransparent.

Abstract: A sheet for forming a resin film for a chip, with which a semiconductor device is provided with a gettering function, is obtained without performing special treatment to a semiconductor wafer and the chip. The sheet has a release sheet, and a resin film-forming layer, which is formed on the releasing face of the release sheet, and the resin film-forming layer contains a binder polymer component, a curing component, and a gettering agent.

Abstract: A semiconductor device may include a composite represented by Formula 1 below as an active layer. x(Ga2O3).y(In2O3).z(ZnO)??Formula 1 wherein, about 0.75?x/z?about 3.15, and about 0.55?y/z? about 1.70. Switching characteristics of displays and driving characteristics of driving transistors may be improved by adjusting the amounts of a gallium (Ga) oxide and an indium (In) oxide mixed with a zinc (Zn) oxide and improving optical sensitivity.

Abstract: A method for fabricating an oxide thin film transistor includes sequentially forming a gate insulating film, an oxide semiconductor layer, and a first insulating layer; selectively patterning the oxide semiconductor layer and the first insulating layer to form an active layer and an insulating layer pattern on the gate electrode; forming a second insulating layer on the substrate having the active layer and the insulating layer pattern formed thereon; and selectively patterning the insulating layer pattern and the second insulating layer to form first and second etch stoppers on the active layer. The oxide semiconductor layer may be a ternary system or quaternary system oxide semiconductor comprising a combination of AxByCzO (A, B, C=Zn, Cd, Ga, In, Sn, Hf, Zr; x, y, z?0).

Abstract: An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced.

Abstract: A memory device is provided, which includes a memory element including a first electrode, a second electrode, and a silicon layer disposed between the first electrode and the second electrode. The memory element is capable of being in a first state, a second state, and a third state. A first data is written to the memory element being in the first state so that a potential of the first electrode is higher than a potential of the second electrode, whereby the memory element being in the second state is obtained. A second data is written to the memory element being in the first state so that a potential of the second electrode is higher than a potential of the first electrode, whereby the memory element being in the third state is obtained.

Abstract: An image detector comprises: an active matrix-type TFT array substrate having a pixel area, in which photoelectric conversion elements and thin film transistors are arranged in a matrix shape, a data line, and a bias line; a conversion layer, which is arranged on the TFT array substrate and converts radiation into light; and a conductive cover, which covers the conversion layer, wherein the conductive cover is adhered in an adhesion area in an upper layer than an area, in which at least one of the data line and the bias line extend from the pixel area to each of terminals, and wherein inorganic insulation films configured by at least two layers are formed between the at least one of the data line and the bias line and the adhesion area.

Abstract: The present invention provides an ion sensor with which an ion concentration can be stably measured with high accuracy, and a display device. The present invention is an ion sensor that includes a field effect transistor. The ion sensor also includes an ion sensor antenna and a reset device. The ion sensor antenna and the reset device are connected to a gate electrode of the field effect transistor. The reset device is capable of controlling the potential of the gate electrode and the ion sensor antenna to a predetermined potential.

Abstract: An embodiment of the invention relates to a TFT-LCD array substrate comprising a substrate, a gate line and a data line formed on the substrate, a pixel electrode and a thin film transistor formed in a pixel region defined by the gate line and the data line, wherein the thin film transistor comprises a gate electrode, a source electrode, and a transparent drain electrode, and the transparent drain electrode is electrically connected with the pixel electrode.

Abstract: There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is formed as a three layered structure of a material film containing mainly W, a material film containing mainly Al, and a material film containing mainly Ti to reduce a wiring resistance. A wiring is etched using an IPC etching apparatus. The gate electrode has a taper shape and the width of a region which becomes the taper shape is set to be 1 ?m or more.