Abstract: In a display substrate and a method of manufacturing the display substrate, the display substrate includes a data line, a channel pattern, an insulating pattern and a pixel electrode. The data line extends in a direction on a base substrate. The channel pattern is disposed in a separate region between an input electrode connected to the data line and an output electrode spaced apart from the input electrode. The channel pattern makes contact with the input electrode and the output electrode on the input and output electrodes. The insulating pattern is spaced apart from the channel pattern on the base substrate and includes a contact hole exposing the output electrode. The pixel electrode is formed on the insulating pattern to make contact with the output electrode through the contact hole. Thus, a damage of the oxide semiconductor layer may be minimized and a manufacturing process may be simplified.

Abstract: A display substrate includes first, second, and third insulating layers in a display area thereof. The first and third insulating layers are in not only the display area but also a pad area adjacent to the display area and including a pad therein. Thus, defects of the display panel may be reduced.

Abstract: An object of one embodiment of the disclosed invention is to provide a semiconductor device having a novel structure in which stored data can be held even when power is not supplied and the number of times of writing is not limited. The semiconductor device is formed using an insulating layer formed over a supporting substrate and, over the insulating layer, a highly purified oxide semiconductor and single crystal silicon which is used as a sililcon on insulator (SOI). A transistor formed using a highly purified oxide semiconductor can hold data for a long time because leakage current thereof is extremely small. Further, by using an SOI substrate and utilizing features of thin single crystal silicon formed over an insulating layer, fully-depleted transistors can be formed; therefore, a semiconductor integrated circuit with high added values such as high integration, high-speed driving, and low power consumption can be obtained.

Abstract: A display device includes an infrared sensing transistor and a visible sensing transistor. The visible sensing transistor includes a semiconductor on a substrate; an ohmic contact on the semiconductor; an etch stopping layer on the ohmic contact; a source electrode and a drain electrode on the etch stopping layer; a passivation layer on the source electrode and the drain electrode; and a gate electrode on the passivation layer. The etch stopping layer may be composed of the same material as the source electrode and the drain electrode. The infrared sensing transistor is similar to the visible sensing transistor except the etch stopping layer is absent.

Abstract: The invention provides a light emitting diode package structure, including: a light emitting diode chip formed on a substrate; a composite coating layer formed on the light emitting diode chip, wherein the composite coating layer comprises a first coating layer and a second coating layer, and the composite coating layer has a reflectivity greater than 95% at the wavelength of 500-800 nm; a cup body formed on the substrate, wherein the cup body surrounds the light emitting diode chip; and an encapsulation housing covering the light emitting diode chip, wherein the encapsulation housing comprises a wavelength transformation material.

Abstract: Provided are an electronic device and methods of fabricating the same, the electronic device include a device-substrate, a stacked structure, and an electrode. The stacked structure includes a graphene thin film between a first insulator and a second insulator. The electrode is disposed over the stacked structure.

Abstract: According to present invention, system on panel without complicating the process of TFT can be realized, and a light-emitting device that can be formed by lower cost than that of the conventional light-emitting device can be provided. A light-emitting device is provided in which a pixel portion is provided with a pixel including a light-emitting element and a TFT for controlling supply of current to the light-emitting element; a TFT included in a drive circuit and a TFT for controlling supply of current to the light-emitting element include a gate electrode, a gate insulating film formed over the gate electrode, a first semiconductor film, which overlaps with the gate electrode via the gate insulating film, a pair of second semiconductor films formed over the first semiconductor film; the pair of second semiconductor films are doped with an impurity to have one conductivity type; and the first semiconductor film is formed by semiamorphous semiconductor.

Abstract: In an inverted staggered thin film transistor, a microcrystalline silicon film and a pair of silicon carbide films are provided between a gate insulating film and wirings serving as a source wiring and a drain wiring. The microcrystalline silicon film is formed on the gate insulating film side and the pair of silicon carbide films are formed on the wiring side. In such a manner, a semiconductor device having favorable electric characteristics can be manufactured with high productivity.

Abstract: Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole 46 is improved. By forming the organic EL material after embedding an insulator in an electrode hole 46 on a pixel electrode and forming a protective portion 41b, failure film formation in the electrode hole 46 can be prevented. This can prevent concentration of electric current due to a short circuit between a cathode and an anode of the EL element, and can prevent failure light emission of an EL layer.

Abstract: Although an organic resin substrate is highly effective at reducing the weight and improving the shock resistance of a display device, it is required to improve the moisture resistance of the organic resin substrate for the sake of maintaining the reliability of an EL element. Hard carbon films are formed to cover a surface of the organic resin substrate and outer surfaces of a sealing member. Typically, DLC (Diamond like Carbon) films are used as the carbon films. The DLC films have a construction where carbon atoms are bonded into an SP3 bond in terms of a short-distance order, although the films have an amorphous construction from a macroscopic viewpoint. The DLC films contain 95 to 70 atomic % carbon and 5 to 30 atomic % hydrogen, so that the DLC films are very hard and minute and have a superior gas barrier property and insulation performance.

Abstract: A plurality of pixels are arranged on the substrate. Each of the pixels is provided with an EL element which utilizes as a cathode a pixel electrode connected to a current control TFT. On a counter substrate, a light shielding film, a first color filter having a first color and a second color filter having a second color are provided. The second color is different from the first color.

Abstract: A LCD device having a large pixel holding capacitance includes opposedly facing first and second substrates, and liquid crystal between them. The first substrate includes a video signal line, a pixel electrode, a thin film transistor having a first electrode connected to the video signal line and a second electrode connected to the pixel electrode, a first silicon nitride film formed above the second electrode, an organic insulation film above the first silicon nitride film, a capacitance electrode above the organic insulation film, and a second silicon nitride film above the capacitance electrode and below the pixel electrode. A contact hole etched in both the first and second silicon nitride films connects the second electrode and the pixel electrode to each other. A holding capacitance is formed by the pixel electrode, the second silicon nitride film and the capacitance electrode.

Abstract: Memories and their formation are disclosed. One such memory has a first array of first memory cells extending in a first direction from a first surface of a semiconductor. A second array of second memory cells extends in a second direction, opposite to the first direction, from a second surface of the semiconductor. Both arrays may be non-volatile memory arrays. For example, one of the memory arrays may be a NAND flash memory array, while the other may be a one-time-programmable memory array.

Abstract: Layer structures for use in density of states (“DOS”) engineered FETs are described. One embodiment comprises a layer structure for use in fabricating an n-channel transistor. The layer structure includes a first semiconductor layer having a conduction band minimum EC1; a second semiconductor layer having a discrete hole level H0; a wide bandgap semiconductor barrier layer disposed between the first and the second semiconductor layers; a gate dielectric layer disposed above the first semiconductor layer; and a gate metal layer disposed above the gate dielectric layer; wherein the discrete hole level H0 is positioned below the conduction band minimum Ec1 for zero bias applied to the gate metal layer.

Abstract: A semiconductor device includes a main body made of a GaN-based semiconductor material, and at least one electrode structure. The electrode structure includes an ohmic contact layer that is formed on the main body, a buffer layer that is formed on the ohmic contact layer opposite to the main body, and a circuit layer that is made of a copper-based material and that is formed on the buffer layer opposite to the ohmic contact layer. The ohmic contact layer is made of a material selected from titanium, aluminum, nickel, and alloys thereof. The buffer layer is made of a material different from the material of the ohmic contact layer and selected from titanium, tungsten, titanium nitride, tungsten nitride, and combinations thereof.

Abstract: Provided is a method for producing inexpensive and high-quality aluminum nitride crystals. Gas containing N atoms is introduced into a melt of a Ga—Al alloy, whereby aluminum nitride crystals are made to epitaxially grow on a seed crystal substrate in the melt of the Ga—Al alloy. A growth temperature of aluminum nitride crystals is set at not less than 1000 degrees C. and not more than 1500 degrees C., thereby allowing GaN to be decomposed into Ga metal and nitrogen gas.

Abstract: The semiconductor device according to the present invention includes a semiconductor layer of a first conductivity type made of SiC, a body region of a second conductivity type formed on a surface layer portion of the semiconductor layer, a gate trench dug down from a surface of the semiconductor layer with a bottom surface formed on a portion of the semiconductor layer under the body region, source regions of the first conductivity type formed on a surface layer portion of the body region adjacently to side surfaces of the gate trench, a gate insulating film formed on the bottom surface and the side surfaces of the gate trench so that the thickness of a portion on the bottom surface is greater than the thickness of portions on the side surfaces, a gate electrode embedded in the gate trench through the gate insulating film, and an implantation layer formed on a portion of the semiconductor layer extending from the bottom surface of the gate trench to an intermediate portion of the semiconductor layer in the t

Abstract: In a semiconductor diamond device, there is provided an ohmic electrode that is chemically and thermally stable and has an excellent low contact resistance and high heat resistance. A nickel-chromium alloy, or a nickel-chromium compound, containing Ni and Cr such as Ni6Cr2 or Ni72Cr18Si10, which is chemically and thermally stable, is formed on a semiconductor diamond by a sputtering process and so forth, to thereby obtain the semiconductor diamond device provided with an excellent ohmic electrode. If heat treatment is applied after forming the nickel-chromium alloy or compound, it is improved in characteristics.

Abstract: A semiconductor device includes a silicon substrate, a silicon carbide film formed on the silicon substrate, a mask member formed on a surface of the silicon carbide film, and having an opening section, single-crystal silicon carbide films each having grown epitaxially from the silicon carbide film exposed in the opening section as a base point, and covering the silicon carbide film and the mask member, and a semiconductor element formed on surfaces of the single-crystal silicon carbide films, an assembly section formed of the single-crystal silicon carbide films assembled to each other exists above the mask member, the semiconductor element has a body contact region, and the body contact region is disposed at a position overlapping the assembly section viewed from a direction perpendicular to the surface of the silicon substrate.

Abstract: There is provided a light emitting device in which low power consumption can be realized even in the case of a large screen. The surface of a source signal line or a power supply line in a pixel portion is plated to reduce a resistance of a wiring. The source signal line in the pixel portion is manufactured by a step different from a source signal line in a driver circuit portion. The power supply line in the pixel portion is manufactured by a step different from a power supply line led on a substrate. A terminal is similarly plated to made the resistance reduction. It is desirable that a wiring before plating is made of the same material as a gate electrode and the surface of the wiring is plated to form the source signal line or the power supply line.

Abstract: Provided are a light-emitting device, a light-emitting device package, and a method for fabricating the light-emitting device. The light-emitting device includes a first light-emitting structure; an insulation layer having non-conductivity, in which a current does not flow, on the first light-emitting structure; a second light-emitting structure on the insulation layer; and a common electrode simultaneously and electrically connected to the first light-emitting structure and the second light-emitting structure.

Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

Abstract: In order to improve the light extraction efficiency of a light-emitting element, the light-emitting element includes: a light-emitting layer provided between an electrode and a transparent substrate; a particle layer provided between the light-emitting layer and the transparent substrate; and an adhesive layer provided between the light-emitting layer and the particle layer, the particle layer includes particles having a refraction index that is higher than a refraction index of the transparent substrate, the adhesive layer has a refraction index that is higher than the refraction index of the transparent substrate, and the particle layer has an average thickness that is less than an average particle size of the particles.

Abstract: The invention provides a light emitting semiconductor structure, which includes a substrate; a first LED chip formed on the substrate; an adhesion layer formed on the first LED chip; and a second light emitting diode chip formed on the adhesion layer, wherein the second LED chip has a first conductive wire which is electrically connected to the substrate.

Abstract: A light emitting device is a light emitting device using light emitting elements and includes: a substrate; a resin frame provided circularly on the substrate; a resin wall provided on the substrate so as to partition an area surrounded by the resin frame into 2 zones; light-emitting sections (a first light-emitting section: blue LEDs+red fluorescent material, a second light-emitting section: blue LEDs+yellow fluorescent material) provided in the respective zones, each of which light-emitting sections includes at least one light emitting element; and first and second anode electrodes and a cathode electrode provided so that each of the light-emitting sections receives current via a corresponding anode electrode and the cathode electrode, the light-emitting sections emitting respective pieces of light each having at least one color, which respective pieces of light have different colors from each other, the first and second anode electrodes being electrically connected to the first and second light-emitting se

Abstract: A LED (Light-Emitting Diode) lighting fixture and a manufacturing method thereof are disclosed. The LED lighting fixture comprises a LED module generating light at a wavelength range of 300-700 nm, a lamp cover shielding the LED module, and a phosphor layer. The phosphor layer which is coated on an inner surface towards the LED module comprises at least two types of phosphor mixed at a default ratio for transforming the light of 300-700 nm in wavelength to luminary light in the wavelength range of 400-700 nm.

Abstract: A pixel structure including a substrate, a color filter layer, a conductive light-shielding layer, a buffer layer, a scan line, a data line, an active device, and a pixel electrode is provided. The substrate has a pixel region. The color filter layer is disposed corresponding to the pixel region. The conductive light-shielding layer is disposed corresponding to the periphery of the pixel region. The buffer layer covers the conductive light-shielding layer and color filter layer. The scan line and the data line are disposed on the buffer layer. The active device is disposed on the buffer layer and electrically connected to the scan line and data line. The pixel electrode is disposed on the buffer layer and electrically connected to the active device, wherein an overlapping area between the pixel electrode and the conductive light-shielding layer constitutes a storage capacitor. A method for manufacturing the pixel structure is also provided.

Abstract: Disclosed is a light emitting device array. The light emitting device array comprises a light emitting device and a body comprises first and second lead frames electrically connected to the light emitting device and a substrate on which the light emitting device package is disposed, the substrate comprises a base layer and a metal layer disposed on the base layer and electrically connected to the light emitting device package, wherein the metal layer comprises first and second electrode patterns electrically connected to the first and second lead frames and a heat dissipation pattern insulated from at least one of the first or(and) second electrode patterns, absorbing heat generated from at least one of the base layer or(and) the light emitting device package and then dissipating the heat.

Abstract: A light-emitting device operating on a high drive voltage and a small drive current. LEDs (1) are two-dimensionally formed on an insulating substrate (10) of e.g., sapphire monolithically and connected in series to form an LED array. Two such LED arrays are connected to electrodes (32) in inverse parallel. Air-bridge wiring (28) is formed between the LEDs (1) and between the LEDs (1) and electrodes (32). The LED arrays are arranged zigzag to form a plurality of LEDs (1) to produce a high drive voltage and a small drive current. Two LED arrays are connected in inverse parallel, and therefore an AC power supply can be used as the power supply.

Abstract: A group III-nitride based semiconductor LED includes a sapphire substrate, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer grown sequentially on the sapphire substrate. An n-type strain lattice structure is arranged between the n-type semiconductor layer and the active layer. A lattice constant of the n-type strain lattice structure exceeds that of the active layer, and is less than that of the n-type semiconductor layer.

Abstract: A light emitting diode (LED) package comprising a substrate with an LED chip mounted to the substrate and in electrical contact with it. An inner material covers the LED chip, and a lens covers the inner material with the lens material being harder than the inner material. An adhesive is arranged between the substrate and the lens to hold the lens to the substrate and to compensate for different coefficients of thermal expansion (CTE) between the lens and the remainder of the package. A method for forming an LED package comprises providing a substrate with a first meniscus ring on a surface of the substrate. An LED chip is mounted to the substrate, within the meniscus ring. An inner material is deposited over the LED chip, and a lens material in liquid form is deposited over the inner material. The lens material held in a hemispheric shape by the first meniscus feature and the lens material is cured making it harder than the inner material.

Abstract: Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device may include a reflective metal support including at least two pairs of first and second reflective metal layers, a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor and the second conductive type semiconductor layer on the reflective metal support, and an electrode on the light emitting structure layer. The reflective metal support includes at least one of Al, Ag, an APC(Ag—Pd—Cu) alloy, and an Au—Ni alloy.

Abstract: A LED mirror light assembly comprises a body having a through hole configured subject to a predetermined shape and located on a middle part thereof, a film-coated glass configured subject to shape of the through hole and supported on a first step, a LED holder holding a plurality of light-emitting diodes, and a reflector comprising a reflective surface located on a front side thereof and facing toward the light-emitting diodes and a light-shading coating coated on a rear side thereof The reflector being kept in a non-parallel manner relative to the film-coated glass and defining with the film-coated glass a predetermined contained angle so that the light spots of the light-emitting diodes are repeatedly reflected by the reflective back face of the film-coated glass and the reflective surface of the reflector, forming a curved tunnel of light spots.

Abstract: There is provided a semiconductor light emitting device and method of making the same, having a first conductivity type semiconductor layer; an active layer formed on the first conductivity type semiconductor layer; a second conductivity type semiconductor layer formed on the active layer and including a plurality of holes; and a transparent electrode formed on the second conductivity type semiconductor layer.

Abstract: A Group III nitride semiconductor light-emitting device having an Ag or Ag alloy reflective film provided in an insulating film, at least a portion of the reflective film is located via the insulating film in a region between an n-lead electrode and at least one of a p-contact electrode having transparency and a p-type layer, wherein a conductive film is formed via the insulating film between the n-lead electrode and the reflective film of the region, and the conductive film is electrically connected to at least one of the p-contact electrode and the p-type layer.

Abstract: Certain embodiments provide a semiconductor light emitting device including: a first metal layer; a stack film including a p-type nitride semiconductor layer, an active layer, and an n-type nitride semiconductor layer; an n-electrode; a second metal layer; and a protection film protecting an outer circumferential region of the upper face of the n-type nitride semiconductor layer, side faces of the stack film, a region of an upper face of the second metal layer other than a region in contact with the p-type nitride semiconductor layer, and a region of an upper face of the first metal layer other than a region in contact with the second metal layer. Concavities and convexities are formed in a region of the upper face of the n-type nitride semiconductor layer, the region being outside the region in which the n-electrode is provided and being outside the regions covered with the protection film.

Abstract: A semiconductor light emitting device which has a wavelength converting part on a semiconductor film and can eliminate unevenness in emission color without a reduction in light output. The semiconductor film includes a light emitting layer. The support substrate is bonded to the semiconductor film via a light-reflecting layer and has a support surface supporting the semiconductor film and edges located further out than the side surfaces of the semiconductor film. The light-shielding part covers the side surfaces of the semiconductor film and part of the support surface around the semiconductor film in plan view. The wavelength converting part contains a fluorescent substance and is provided over the support substrate to bury the semiconductor film and the light-shielding part therein. The wavelength converting part has a curved surface shape in which its thickness increases when going from the edges toward the center of the semiconductor film.

Abstract: The invention provides a Group III nitride semiconductor light-emitting device which has a light extraction face at the n-layer side and which provides high light emission efficiency. The light-emitting device is produced through the laser lift-off technique. The surface of the n-GaN layer of the light-emitting device is roughened. On the n-GaN layer, a transparent film is formed. The transparent film satisfies the following relationship: 0.28?n×d1×2/??0.42 or 0.63?n×d1×2/??0.77, wherein n represents the refractive index of the transparent film, d1 represents the thickness of the transparent film in the direction orthogonal to an inclined face thereof, and ? represents the wavelength of the light emitted from the MQW layer.

Abstract: A method of producing a surface-mountable semiconductor component including providing an auxiliary carrier made with a plastics material; applying at least one insert and at least one optoelectronic component to a mounting surface of the auxiliary carrier; enclosing the optoelectronic component and the insert in a common molding, wherein the molding covers the optoelectronic component and the insert form-fittingly at least in places, the optoelectronic component and the insert are not in direct contact with one another, and the optoelectronic component and the insert are connected together mechanically by the molding; removing the auxiliary carrier; and producing individual surface-mountable semiconductor components by severing the molding.

Abstract: A light-emitting diode (LED) package comprising a carrier, an LED chip and a phosphor glue is provided. The carrier has a recess, an upper surface, and a ring-shape rough surface connected to a top edge of the recess. The LED chip is disposed within the recess. The phosphor glue fills up the recess and over the upper surface of the carrier. An edge of the phosphor glue contacts the ring-shape rough surface.

Abstract: An optoelectronic component (1) is proposed that comprises a housing body (2) and at least one semiconductor chip (8) disposed thereon, said housing body having a base part (13) comprising a connector body (16), on which a connecting conductor material (6, 7) is disposed, and said housing body having a reflector part (14) comprising a reflector body (23), on which a reflector material (9) is disposed, wherein said connector body and said reflector body are preformed separately from each other and said reflector body is disposed on said connector body in the form of a reflector top.

Abstract: An LED package and a fabrication method therefor. The LED package includes first and second lead frames made of heat and electric conductors, each of the lead frames comprising a planar base and extensions extending in opposed directions and upward directions from the base. The package also includes a package body made of a resin and configured to surround the extensions of the first and second lead frames to fix the first and second lead frames while exposing underside surfaces of the first and second lead frames. The LED package further includes a light emitting diode chip disposed on an upper surface of the base of the first lead frame and electrically connected to the bases of the first and second lead frames, and a transparent encapsulant for encapsulating the light emitting diode chip.

Abstract: An LED includes a compound semiconductor structure having first and second compound layers and an active layer, first and second electrode layers atop the second compound semiconductor layer and connected to respective compound layers. An insulating layer is coated in regions other than where the first and second electrode layers are located. A conducting adhesive layer is formed atop the non-conductive substrate, connecting the same to the first electrode layer and insulating layer. Formed on one side surface of the non-conductive substrate and adhesive layer is a first electrode connection layer connected to the conducting adhesive layer. A second electrode connection layer formed on another side surface is connected to the second electrode layer. By forming connection layers on respective side surfaces of the light-emitting device, manufacturing costs can be reduced.

Abstract: An LED package includes a base, an LED chip, and an electrode layer. The base has thereon a first electrical connecting layer and a separated second electrical connecting layer. The LED chip is placed on the base and electrically connected with the first electrical connecting layer and the second electrical connecting layer by flip chip bonding. The electrode layer comprises a first electrode and a separated second electrode, and a receiving groove being defined between the first electrode and the second electrode. The base is received in the receiving groove of the electrode layer with the first electrical connecting layer being electrically connected to the first electrode, and the second electrical connecting layer being electrically connected to the second electrode.

Abstract: A light-emitting apparatus has a light-emitting device and a supporting board. The light-emitting device has a pair of n-electrodes with a p-electrode therebetween, on the same plane. The supporting board includes an insulating substrate on which positive and negative electrodes are formed, opposing to the p- and n-electrodes of the light-emitting device, respectively. Bonding members bond the p- and n-electrodes with the positive and negative electrodes, respectively. The positive electrode on the supporting board is formed within the width region of the p-electrode and narrower in width than the width of the p-electrode, in a cross-section along a line extending through the pair of n-electrodes. The negative electrodes oppose to the n-electrodes, respectively, with the same widths, or with that side face of each of the negative electrodes which faces the positive electrode being retracted outwardly from that side face of each of the n-electrodes which faces the p-electrode.

Abstract: There is provided a light emitting device including: a package body having first and second circumferential surfaces and a plurality of side surfaces formed therebetween, the package body defined into first and second level areas including the first and second circumferential surfaces, respectively; first and second external terminal blocks each having an electrical contact part; an LED chip disposed between the first and second external terminal blocks in the first level area and having an electrode surface where first and second electrodes are formed; and wires electrically connected to first and second electrodes of the LED chip to the electrical contact parts of the first and second external terminal blocks, respectively.

Abstract: An organic light emitting diode (OLED) display is disclosed. In one embodiment, the OLED display includes an organic light emitting element formed over a substrate and an encapsulation portion covering the organic light emitting element. Further, the encapsulation portion may include at least one organic layer and at least one inorganic layer, wherein ends of the inorganic layer and the organic layer directly contact the substrate, and wherein the organic layer is thicker than the inorganic layer.

Abstract: A device includes a dielectric layer, and a heavily doped semiconductor layer over the dielectric layer. The heavily doped semiconductor layer is of a first conductivity type. A semiconductor region is over the heavily doped semiconductor layer, wherein the semiconductor region is of a second conductivity type opposite the first conductivity type. A Lateral Insulated Gate Bipolar Transistor (LIGBT) is disposed at a surface of the semiconductor region.

Abstract: To provide a semiconductor device including a functional laminate having flatness and crystallinity improved by effectively passing on the crystallinity and flatness improved in a buffer to the functional laminate, and to provide a method of producing the semiconductor device; in the semiconductor device including the buffer and the functional laminate having a plurality of nitride semiconductor layers, the functional laminate includes a first n-type or i-type AlxGa1-xN layer (0?x<1) on the buffer side, and an AlzGa1-zN adjustment layer containing p-type impurity, which has an approximately equal Al composition to the first AlxGa1-xN layer (x?0.05?z?x+0.05, 0?z<1) is provided between the buffer and the functional laminate.

Abstract: According to one embodiment, a solid state imaging device includes a photoelectric converting portion including a semiconductor region and a semiconductor film. The semiconductor region has a first region and a second region. The first region is of a second conductivity type. The first region is provided in a semiconductor substrate. The second region is of a first conductivity type. The first conductivity type is a different conductivity type from the second conductivity type. The second region is provided on the first region. The semiconductor film is of the second conductivity type. The semiconductor film is provided on the semiconductor region. An absorption coefficient of a material of the semiconductor film to a visible light is higher than an absorption coefficient of a material of the semiconductor substrate to the visible light. A thickness of the semiconductor film is smaller than a thickness of the semiconductor region.