Abstract: A method for remote control and monitoring of a valve from a remote control/monitoring station comprises the following steps: providing a valve assembly including a valve body and a movable valve member, a mechanical position sensor, a drive motor, and an analog control module controlling the drive motor in response to incoming analog control signals and producing analog output control signals corresponding to the position of the valve member; removing the mechanical position sensor; removing the analog control module; operatively connecting an optical position sensor to the valve member; operatively connecting a digital control module to the drive motor and the optical position sensor controlling the drive motor in response to incoming digital control signals and producing digital output control signals corresponding to the valve member position; and communicating the digital input and output signals between the valve controller and a remote control/monitoring station over an electronic network.

Abstract: Provided is a configuration in which: a spool driven by an electromagnetic proportional solenoid is urged by a spool-returning spring configured to exert urging force in an opposite direction to a driving direction of the electromagnetic proportional solenoid; a mechanical stopper is disposed at the stroke end of the spool; current dither causes a control current to micro-vibrate, the control current driving the electromagnetic proportional solenoid; and the mechanical stopper includes a stopper-urging spring configured to allow the spool to vibrate owing to the current dither even when the spool is in contact with the mechanical stopper. A proportional solenoid control valve with this configuration is capable of reducing hysteresis at the stroke end of the spool by means of the current dither, and controlling the spool in a stable manner over the entire control range including the stroke end of the spool.

Abstract: A valve includes a plug mounted to a lower end of a valve rod extending into a chamber in a top portion of a body and in communication with a fluid passage of the body. The valve rod extends through a cap mounted to the top portion of the body. A bottom portion of a top cover is mounted to a top end of the cap. A sleeve is received in a compartment in a top portion of the top cover and is threadedly engaged with an upper end of the valve rod. A hand wheel is mounted to the sleeve. A lower end of the sleeve extends through at least one bearing mounted in the compartment of the top cover. When the hand wheel is rotated, the sleeve is driven to move the valve rod and the plug to open or close the fluid passage.

Abstract: A flow characterizing device (30) for a valve comprises: a body (31) in form of a disc with a centerline, the body (31) having an inner surface (33) corresponding to the outer surface of the valve member when the flow characterizing device (30) is installed in the flow path of the valve; and an outer surface (37), the inner and outer surfaces (33, 37) of the flow characterizing device (30) disposed in a spaced relationship along the centerline of the flow characterizing device (30). The body (31) of the flow characterizing device (30) further comprises a flow characterizing channel (49) therein extending between the inner surface (33) and the outer surface (37) of the flow characterizing device (30), thereby providing fluid communication between the inner and outer surfaces (33, 37) of the flow characterizing device (30), and defining an opening (32) in the inner surface (33) of the flow characterizing device (30).

Abstract: This invention relates to coloured polymer particles prepared by a reverse emulsion solvent removal process, electrophoretic fluids comprising such particles, and electrophoretic display devices comprising such fluids.

Abstract: The refrigerator oil of the invention comprises an ester of a polyhydric alcohol and a fatty acid with a content of a C5-C9 fatty acid of 50-100% by mole, a content of a C5-C9 branched fatty acid of at least 30% by mole and a content of a C5 or lower straight-chain fatty acid of not greater than 40% by mole, and it is used with a fluoropropene refrigerant and/or trifluoroiodomethane refrigerant. The working fluid composition for a refrigerating machine according to the invention comprises the ester and a fluoropropene refrigerant and/or trifluoroiodomethane refrigerant.

Abstract: The present invention relates to a process for the purification of water, wherein a surface-reacted natural calcium carbonate is brought into contact with the water to be purified, the surface-reacted natural calcium carbonate being the reaction product of a natural calcium carbonate with an acid and carbon dioxide, which is formed in situ by the acid treatment and/or supplied externally.

Abstract: A positive electrode active material for a non-aqueous secondary battery having high capacity and high rate characteristics is intended to be provided. Further, a positive electrode for a non-aqueous secondary battery and a non-aqueous secondary battery are intended to be provided by using the positive electrode active material. The positive electrode active material for the non-aqueous secondary battery contains a lithium composite oxide having an olivine structure represented by the chemical formula: Li1+AMnXM1?X(PO4)1+B in which A>0, B>0, M represents a metal element, M in the chemical formula is one or more metal elements selected from Fe, Ni, Co, Ti, Cu, Zn, Mg, V, and Zr, the ratio A/B in the chemical formula is within a range of: 2<A/B?7, and the value of X is within a range of: 0.3?X<1.

Abstract: The present invention aims at: providing an accelerated reaction in a liquid-phase reaction; forming, by way of the reaction, a metal oxide nanoparticle and carbon that carries the metal oxide nanoparticle in a highly dispersed state; and providing an electrode containing the carbon and an electrochemical device using the electrode. In order to solve the above-mentioned problem, shear stress and centrifugal force are applied to the reactant in the rotating reactor so that an accelerated chemical reaction is attained in the course of the reaction. Further, the carbon carrying a metal oxide nanoparticle in a highly dispersed state comprises: a metal oxide nanoparticle produced by the accelerated chemical reaction, wherein shear stress and centrifugal force are applied to a reactant in a rotating reactor in the course of the reaction; and carbon dispersed in the rotating reactor by applying shear stress and centrifugal force.

Abstract: Non-doped and doped lithium titanate Li4Ti5O12 obtainable by the thermal reaction of a stoichiometric composite oxide containing Li2TiO3 and TiO2, the preparation of the stoichiometric composite oxide, as well as a process for the preparation of lithium titanate Li4Ti5O12 and its use as anode material in rechargeable lithium-ion batteries.

Abstract: The present invention is directed toward water based play compositions including a crosslinkable network polymer and a crosslinking system effective to crosslink the polymer. The crosslinking system is a water-soluble salt complex including a primary crosslinking agent, a secondary crosslinking agent, and a tertiary crosslinking agent. The crosslinking system contains a diminished amount of boron compounds while remaining effective in crosslinking network polymers including polyvinyl alcohol (to form moldable dough compositions) and guar gum (to form hydrogels).

Abstract: Aqueous dispersions of polymers which are obtainable by free radical suspension polymerization of ethylenically unsaturated monomers in an oil-in-water emulsion whose disperse phase comprises at least one fluorescent dye dissolved in at least one ethylenically unsaturated monomer and has an average particle diameter of at least 1 ?m, in the presence of at least one surface-active compound and at least 0.

Abstract: According to an example, methods for forming three-dimensional (3-D) nano-particle assemblies include depositing SES elements onto respective tips of nano-fingers, in which the nano-fingers are arranged in sufficiently close proximities to each other to enable the tips of groups of adjacent ones of the nano-fingers to come into sufficiently close proximities to each other to enable the SES elements on the tips to be bonded together when the nano-fingers are partially collapsed. The methods also include causing the nano-fingers to partially collapse toward adjacent ones of the nano-fingers to cause a plurality of SES elements on respective groups of the nano-fingers to be in relatively close proximities to each other and form respective clusters of SES elements, introducing additional particles that are to attach onto the clusters of SES elements, and causing the clusters of SES elements to detach from the nano-fingers.

Abstract: A method of fabricating silicon carbide according to the embodiment comprises the steps of preparing a mixture by mixing a silicon source comprising silicon with a solid carbon source or a carbon source comprising an organic carbon compound; supplying binder into the mixture to granulate the mixture; and reacting the granulated mixture.

Abstract: The invention relates to novel polymers containing one or more 4,8-dioxycarbonylalkyl-benzo[1,2-b:4,5-b?]dithiophene repeating units or their thioester derivatives, methods for their preparation and monomers used therein, blends, mixtures and formulations containing them, the use of the polymers, blends, mixtures and formulations as semiconductor in organic electronic (OE) devices, especially in organic photovoltaic (OPV) devices, and to OE and OPV devices comprising these polymers, blends, mixtures or formulations.

Abstract: A thixotropic conductive composition is disclosed that can be used to form conductive features on an electronic device. The thixotropic composition comprises a conjugated polymer, a solvent, and multi-wall carbon nanotubes. The conjugated polymer and the solvent are capable of forming a thixotropic fluid. This enables excellent stability of the carbon nanotubes in the composition at a very high loading. The composition has a long shelf life.

Abstract: A biodegradable bio-plastic material composition comprising of synthetic materials and biological/natural/second natural reusable material is described. The use of natural material that is easily degradable in landfill makes it easy to dispose the article and reduce green gas emission in the environment. Biological reusable materials may be one of polylactic acid based plastic, walnut, almond, coconut and other hard shells, hard skins from rice, wheat, flax, and other seeds, corn husks, and other organic biodegradable matter and synthetic materials may be polypropylene and/or polyethylene.

Abstract: A silicone-based material that incorporates a photochromic molecule, and methods of making the same. The material changes color when exposed to ultraviolet radiation, thereby providing a convenient indicator of exposure. The material reverts to its original color after the source of ultraviolet radiation is removed. Compositions and articles that comprise a silicone-based material that incorporates a photochromic dye.

Abstract: A boom mountable robotic arm for includes a beam pivotally mounted on a boom mounting adaptor, at least two electrically insulated support posts mounted to and spaced apart along the beam, and at least a first rotation coupling and a plurality of second rotation couplings. The first rotation coupling provides pivotal mounting of the beam on the boom mounting adaptor so as to provide selectively controllable rotation of the beam in a substantially vertical plane. The second rotation couplings provide selectively controllable rotation of the electrically insulated support posts about corresponding second axes of rotation between a retracted position substantially laid flush along the beam and a pick-up position ready to receive a conductor being supported. An actuated scissor linkage is mounted to the beam and the boom mounting adaptor for selectively adjusting an angular position of the beam relative to the boom mounting adaptor.

Abstract: A fowl management system is provided. The fowl management system includes a protected surface; a wire mesh at least partially suspended above the protected surface; wherein at least a portion of the wire mesh conducts an electrical current; a fence charger attached to the wire mesh; and a power source attached to the protected surface.

Abstract: A roadway, guard rail or safety barrier having a post and beam construction wherein the beam is mounted to the post by means of a carriage, the beam being secured to the carriage by a securement means, the carriage being adapted to travel longitudinally relative to the post in the event of a collision, the post further including at least one carriage support means, and one or more engagement means on an outer face of the post, the engagement means being adapted to be engaged by the securement means to provide resistance to movement of the carriage with respect to the post, wherein the carriage is sized and shaped so as to not engage or to minimise engagement with the engagement means during the movement.

Abstract: According to one embodiment, there are provided a memory cell forming region, a first wiring hookup region in which first wirings extending in a first direction are formed by being drawn outside of the memory cell forming region, a second wiring hookup region which is disposed in a layer above the first wirings and in which second wirings extending in a second direction are formed by being drawn outside of the memory cell forming region, and a first dummy wiring connected to each of the second wirings. The first dummy wiring is disposed so that a sum of the area of the second wiring and the area of the first dummy wiring becomes the same in the respective second wirings.

Abstract: A phase-change memory device with an improved current characteristic is provided. The phase-change memory device includes a metal word line, a semiconductor layer of a first conductivity type being in contact with the metal word line, and an auxiliary diode layer being in contact with metal word line and the semiconductor layer.

Abstract: Some embodiments include memory constructions having a plurality of bands between top and bottom electrically conductive materials. The bands include chalcogenide bands alternating with non-chalcogenide bands. In some embodiments, there may be least two of the chalcogenide bands and at least one of the non-chalcogenide bands. In some embodiments, the memory cells may be between a pair of electrodes; with one of the electrodes being configured as a lance, angled plate, container or beam. In some embodiments, the memory cells may be electrically coupled with select devices, such as, for example, diodes, field effect transistors or bipolar junction transistors.

Abstract: According to one embodiment, dry etching is performed so that an upper-layer wiring material layer, a memory-layer constituting layer, and an interlayer insulating film are processed to form a pattern including a line-and-space pattern extending in a second direction and a dummy pattern connecting line patterns constituting the line-and-space pattern in a memory cell formation region and an upper-layer wiring hookup region. Then, the dummy pattern is removed.

Abstract: In aspects of the invention, a strongly correlated nonvolatile memory element is provided which exhibits phase transitions and nonvolatile switching functions through electrical means. In an aspect of the invention, a strongly correlated nonvolatile memory element is provided including, on a substrate, a channel layer, a gate electrode, a gate insulator, a source electrode, and a drain electrode. The channel layer includes a strongly correlated oxide thin film, and is formed of a perovskite type manganite which exhibits a charge-ordered phase or an orbital-ordered phase; the gate insulator is formed in contact with at least a portion of a surface or interface of the channel layer and is sandwiched between the channel layer and the gate electrode, and the source electrode and drain electrode are formed in contact with at least a portion of the channel layer.

Abstract: Some embodiments include methods for fabricating memory cell constructions. A memory cell may be formed to have a programmable material directly against a material having a different coefficient of expansion than the programmable material. A retaining shell may be formed adjacent the programmable material. The memory cell may be thermally processed to increase a temperature of the memory cell to at least about 300° C., causing thermally-induced stress within the memory cell. The retaining shell may provide a stress which substantially balances the thermally-induced stress. Some embodiments include memory cell constructions. The constructions may include programmable material directly against silicon nitride that has an internal stress of less than or equal to about 200 megapascals. The constructions may also include a retaining shell silicon nitride that has an internal stress of at least about 500 megapascals.

Abstract: A semiconductor device includes a transistor including a plurality of transistor cells in a semiconductor body, each transistor cell including a control terminal and first and second load terminals. The semiconductor device further includes a first electrical connection electrically connecting the first load terminals. The semiconductor device further includes a second electrical connection electrically connecting the second load terminals. The transistor further includes a phase change material exhibiting a solid-solid phase change at a phase transition temperature Tc between 150° C. and 400° C.

Abstract: A plurality of first conductive layers are stacked at a predetermined pitch in a first direction perpendicular to a substrate. A memory layer is provided in common on side surfaces of the first conductive layers and functions as the memory cells. A second conductive layer comprises a first side surface in contact with side surfaces of the first conductive layers via the memory layer, the second conductive layer extending in the first direction. A width in a second direction of the first side surface at a first position is smaller than a width in the second direction of the first side surface at a second position lower than the first position. A thickness in the first direction of the first conductive layer at the first position is larger than a thickness in the first direction of the first conductive layer at the second position.

Abstract: A method of fabricating an electronic device includes the following steps. At least one first set and at least one second set of nanowires and pads are etched in an SOI layer of an SOI wafer. A first gate stack is formed that surrounds at least a portion of each of the first set of nanowires that serves as a channel region of a capacitor device. A second gate stack is formed that surrounds at least a portion of each of the second set of nanowires that serves as a channel region of a FET device. Source and drain regions of the FET device are selectively doped. A first silicide is formed on the source and drain regions of the capacitor device that extends at least to an edge of the first gate stack. A second silicide is formed on the source and drain regions of the FET device.

Abstract: Nanowire structures having wrap-around contacts are described. For example, a nanowire semiconductor device includes a nanowire disposed above a substrate. A channel region is disposed in the nanowire. The channel region has a length and a perimeter orthogonal to the length. A gate electrode stack surrounds the entire perimeter of the channel region. A pair of source and drain regions is disposed in the nanowire, on either side of the channel region. Each of the source and drain regions has a perimeter orthogonal to the length of the channel region. A first contact completely surrounds the perimeter of the source region. A second contact completely surrounds the perimeter of the drain region.

Abstract: A fused film and methods for making the fused film to be employed in a light emitting device are provided. In one embodiment, the disclosure provides a method for forming a film from fused all-inorganic colloidal nanostructures, where the all-inorganic colloidal nanostructures may include inorganic semiconductor nanoparticles and functional inorganic ligands that may be fused to form an electrical network that is electroluminescent. In another embodiment, the disclosure provides a light-emitting device including the fused film that minimizes current leakage in the device and provides increased stability, longevity, and luminescent efficiency to the device.

Abstract: In a method of manufacture for a nitride semiconductor light emitting element including: a monocrystalline substrate; and an AlN layer; and a first nitride semiconductor layer of a first electrical conductivity type; and a light emitting layer made of an AlGaN-based material; and a second nitride semiconductor layer of a second electrical conductivity type, a step of forming the AlN layer includes: a first step of supplying an Al source gas and a N source gas into the reactor to generate a group of MN crystal nuclei having Al-polarity to be a part of the AlN layer on the surface of the monocrystalline substrate; and a second step of supplying the Al source gas and the N source gas into the reactor to form the AlN layer, after the first step.

Abstract: A nano-structure semiconductor light emitting device includes a base layer formed of a first conductivity type semiconductor, and a first insulating layer disposed on the base layer and having a plurality of first openings exposing partial regions of the base layer. A plurality of nanocores is disposed in the exposed regions of the base layer and formed of the first conductivity-type semiconductor. An active layer is disposed on surfaces of the plurality of nanocores and positioned above the first insulating layer. A second insulating layer is disposed on the first insulating layer and has a plurality of second openings surrounding the plurality of nanocores and the active layer disposed on the surfaces of the plurality of nanocores. A second conductivity-type semiconductor layer is disposed on the surface of the active layer positioned to be above the second insulating layer.

Abstract: A method of manufacturing a nanostructure semiconductor light emitting device including providing a base layer formed of a first conductivity type semiconductor. A mask including an etch stop layer is formed on the base layer. A plurality of openings are formed in the mask so as to expose regions of. A plurality of nanocores are formed by growing the first conductivity type semiconductor on the exposed regions of the base layer to fill the plurality of openings. The mask is partially removed by using the etch stop layer to expose side portions of the plurality of nanocores. An active layer and a second conductivity type semiconductor layer are sequentially grown on surfaces of the plurality of nanocores.

Abstract: A light emitting device, a method of manufacturing the same, a light emitting device package, and a lighting system are disclosed. The light emitting device may include a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer interposed between the first and second conductive semiconductor layers. The first conductive semiconductor layer, the active layer, and the second conductive semiconductor layer may include Al. The second conductive semiconductor layer may have Al content higher than Al content of the first conductive semiconductor layer. The first conductive semiconductor layer may have Al content higher than Al content of the active layer.

Abstract: A semiconductor device includes a drift layer having a structure wherein a plurality of quantum dot layers each including a quantum dot containing InxGa1-xN (0?x?1) and a burying layer burying the quantum dot and containing n-type Inx(GayAl1-y)1-xN (0?x?1, 0?y?1) are stacked.

Abstract: Provided is a Group III nitride epitaxial substrate that can suppress the occurrence of breakage during a device formation process and a method for manufacturing the same. A Group III nitride epitaxial substrate according to the present invention includes a Si substrate, an initial layer in contact with the Si substrate, and a superlattice laminate, formed on the initial layer, including a plurality of sets of laminates, each of the laminates including, in order, a first layer made of AlGaN with an Al composition ratio greater than 0.5 and 1 or less and a second layer made of AlGaN with an Al composition ratio greater than 0 and 0.5 or less. The Al composition ratio of the second layer progressively decreases with distance from the substrate.

Abstract: In one embodiment, a semiconductor device includes a first diffusion layer of a first conductive type and a second diffusion layer of a second conductive type which is a reverse conductive type of the first conductive type, the first conductive type first diffusion layer and the second conductive type diffusion layer being spaced apart and provided in a semiconductor layer, a pocket region of the second conductive type which is provided on a surface portion of the semiconductor layer adjacently to the first diffusion layer, and a first extension region of the first conductive type which is provided in the semiconductor layer to cover at least a portion of the pocket region. A second diffusion layer side end portion of the first extension region is positioned closer to a second diffusion layer side than a second diffusion layer side end portion of the pocket region.

Abstract: A method of fabricating an electronic device includes the following steps. At least one first set and at least one second set of nanowires and pads are etched in an SOI layer of an SOI wafer. A first gate stack is formed that surrounds at least a portion of each of the first set of nanowires that serves as a channel region of a capacitor device. A second gate stack is formed that surrounds at least a portion of each of the second set of nanowires that serves as a channel region of a FET device. Source and drain regions of the FET device are selectively doped. A first silicide is formed on the source and drain regions of the capacitor device that extends at least to an edge of the first gate stack. A second silicide is formed on the source and drain regions of the FET device.

Abstract: Embodiments of the present disclosure provide contact techniques and configurations for reducing parasitic resistance in nanowire transistors. In one embodiment, an apparatus includes a semiconductor substrate, an isolation layer formed on the semiconductor substrate, a channel layer including nanowire material formed on the isolation layer to provide a channel for a transistor, and a contact coupled with the channel layer, the contact being configured to surround, in at least one planar dimension, nanowire material of the channel layer and to provide a source terminal or drain terminal for the transistor.

Abstract: The present invention discloses a novel organic compound is represented by the following formula(A), the organic EL device employing the compound as blue emitting layer can lower driving voltage, prolong half-lifetime and increase the efficiency. Wherein m represent an integer of 0 to 8, n represent an integer of 0 to 10, p represent an integer of 0 to 7, HAr represent a hydrogen, a halide, a cyanine group, a substituted or unsusbstituted heteroaryl group system having 5 to 6 aromatic ring atoms, R1 to R4 are identical or different. R1 to R4 are independently selected from the group consisting of a hydrogen atom, alkyl group having 1 to 30 carbon atoms, a substituted or unsubstituted aryl group having 6 to 30 carbon atoms, a substituted or unsubstituted aralkyl group having 6 to 30 carbon atoms.

Abstract: The present invention provides a sulfonyl group-contained compound, organic electroluminescent device using the same, and a preparation method thereof. The sulfonyl group-contained compound is presented by the following formula: in which R1, R2, and R3 are alkyl groups, aromatic ring groups, —CN or —OCH3 and R1, R2, and R3 are linked in position 2 or 3 of benzene ring. The sulfonyl group-contained compound of the present invention combines three thiofluorenes to form a novel sulfonyl group-contained compound with dendrimer structure, which combines properties of electron affinity and electron transportation of thiofluorene and also combines dimension property of dendrimer structure. When the sulfonyl group-contained compound is used in a light-emitting layer or an electron transport layer of an organic electroluminescent device, the efficiency and the lifespan of the organic electroluminescent device can be increased.

Abstract: An organic light emitting diode display apparatus and a pixel circuit thereof are provided. The pixel circuit includes a switch unit, a capacitor, a first transistor, a second transistor, a third transistor and an organic light emitting diode. In a pre-charging period, a first terminal of the capacitor receives a data voltage through the switch unit, and a second terminal of the capacitor receives a high voltage through the turned-on first transistor. In a programming period, the first terminal of the capacitor receives the data voltage through the switch unit, and the second terminal of the capacitor receives the high voltage that is encoded through the turned-on second and third transistors. In a display period, the first terminal of the capacitor receives a ground voltage through the switch unit, and the first and third transistors are turned-off.

Abstract: A silicon-based compound represented by Formula 1 below and an organic light-emitting device including the silicon-based compound are provided.

Abstract: An organic electroluminescent device includes a plurality of main pixels. Each of the main pixels includes red, green, and blue sub-pixels. Each of the sub-pixels includes a first electrode, a second electrode opposite to the first electrode, and an organic light emitting layer between the first and second electrode. The organic light emitting layer of each of the sub-pixels includes a blue light emitting layer and a green light emitting layer. Optical microresonator distances of the red, green, and blue sub-pixels are different from each other.

Abstract: Provided is a heterocyclic compound represented by Formula 1 below and an organic light-emitting device including the heterocyclic compound of Formula 1: <Formula 1> wherein substituents in Formula 1 above are defined as in the specification.

Abstract: A compound having an electron injection capability and/or electron transport capability represented by Formula 1, an organic light emitting device including the compound; and a flat display device including the organic light emitting device. The descriptions of substituents are referred to in the detailed description.

Abstract: Embodiments are directed to an organometallic complex and an organic light-emitting diode including the organometallic complex.

Abstract: Provided is an organic light emitting diode that is highly efficient and has a long lifespan. The organic light emitting diode includes a carbazole-based compound for improving light emission efficiency. In certain embodiments an electron transport layer can include an anthraces-based compound. The organic light emitting diode may be included in a flat display diode including a thin film transistor (TFT).