Abstract: The present invention discloses methods to create higher quality group III-nitride wafers that then generate improvements in the crystalline properties of ingots produced by ammonothermal growth from an initial defective seed. By obtaining future seeds from carefully chosen regions of an ingot produced on a bowed seed crystal, future ingot crystalline properties can be improved. Specifically, the future seeds are optimized if chosen from an area of relieved stress on a cracked ingot or from a carefully chosen N-polar compressed area. When the seeds are sliced out, miscut of 3-10° helps to improve structural quality of successive growth. Additionally a method is proposed to improve crystal quality by using the ammonothermal method to produce a series of ingots, each using a specifically oriented seed from the previous ingot. When employed, these methods enhance the quality of Group III nitride wafers and thus improve the efficiency of any subsequent device.

Abstract: A compound semiconductor integrated circuit chip has a front and/or back surface metal layer used for electrical connection to an external circuit. The compound semiconductor integrated circuit chip (first chip) comprises a substrate, an electronic device layer, and a dielectric layer. A first metal layer is formed on the front side of the dielectric layer, and a third metal layer is formed on the back side of the substrate. The first and third metal layer are made essentially of Cu and used for the connection to other electronic circuits. A second chip may be mounted on the first chip with electrical connection made with the first or the third metal layer that extend over the electronic device in the first chip in the three-dimensional manner to make the electrical connection between the two chips having connection nodes away from each other.

Abstract: According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type made of silicon carbide; and a second semiconductor layer of a second conductivity type made of silicon carbide, placed in junction with the first semiconductor layer, and containing an electrically inactive element.

Abstract: A light source assembly, including one or more light emitting diodes disposed within a hermetically sealed enclosure, wherein the light emitting diodes are in the form of one or more unpackaged planar semiconductor dies mounted on an inner surface of a wall of the enclosure, wherein the wall of the enclosure includes electrically conductive tracks that connect electrical contacts of the unpackaged planar semiconductor dies to corresponding electrical contacts external of the sealed enclosure.

Abstract: An optical coupling system is provided which includes a first layer structure and a second layer structure. The first layer structure includes a plurality of layers sequentially stacked on a substrate, and is configured to compresses a beam emitted from a light source along a direction substantially perpendicular to a top surface of the substrate. The second layer structure is formed on the substrate, and is configured to compresses the beam, having passed through the first layer structure, along a direction substantially parallel to the top surface of the substrate.

Abstract: The present disclosure involves a light-emitting diode (LED) packaging structure. The LED packaging structure includes a submount having a substrate and a plurality of bond pads on the substrate. The LED packaging structure includes a plurality of p-type LEDs bonded to the substrate through a first subset of the bond pads. The LED packaging structure includes a plurality of n-type LEDs bonded to the substrate through a second subset of the bond pads. Some of the bond pads belong to both the first subset and the second subset of the bond pads. The p-type LEDs and the n-type LEDs are arranged as alternating pairs. The LED packaging structure includes a plurality of transparent and conductive components each disposed over and electrically interconnecting one of the pairs of the p-type and n-type LEDs. The LED packaging structure includes one or more lenses disposed over the n-type LEDs and the p-type LEDs.

Abstract: An LED board structure includes a light-pervious substrate having a plurality of light-pervious areas formed thereon, a plurality of patterned conductive traces arranged on the light-pervious substrate at locations other than the light-pervious areas, and a plurality of LEDs correspondingly arranged on the light-pervious areas and respectively having two electrode terminals electrically connected to the patterned conductive traces. With these arrangements, light emitted from the LEDs not only projects forward, but also backwardly passes through the light-pervious areas, so that both sides of the LED board structure are illuminated by the LEDs. A method of manufacturing an LED board structure is also disclosed.

Abstract: A pixel array and a pixel unit thereof adapted in a display panel are provided. The pixel array includes a plurality of pixel units, and each pixel unit includes a first gate line, a second gate line, a data line, a first sub-pixel, a second sub-pixel and a third sub-pixel. The first sub-pixel is electrically connected to the second gate line and electrically connected to the data line through the third sub-pixel. The second sub-pixel is electrically connected to the second gate line and the data line. The third sub-pixel is electrically connected to the first gate line and the data line.

Abstract: A method of manufacturing a display panel includes forming a pixel-defining layer on a substrate, disposing a mask on the pixel-defining layer on a first region of the substrate, and forming a first emission layer, and disposing the mask on the pixel-defining layer on a second region of the substrate, and forming a second emission layer.

Abstract: A white light-emitting diode (LED) package containing plural blue LED chips is disclosed. The white LED package includes a transparent plate, plural blue LED chips bonded on a front surface of the transparent plate, a front fluorescent glue layer covering the plural blue LED chips, and a rear transparent glue layer covering a rear surface of the transparent plate and located at a position aligned with the front fluorescent glue layer. The edge of the rear transparent glue layer has an inclined lateral surface or a curved inclined lateral surface. Therefore, the light can be extracted from both front and rear surfaces, and the light extraction efficiency of the rear surface of the transparent plate is increased. The rear transparent glue layer can be replaced by a rear fluorescent glue layer to reduce the color temperature difference between the lights extracted from the front surface and the rear surface.

Abstract: An array substrate and a display device are disclosed. The array substrate comprises: a TFT, a pixel electrode layer driven by the TFT, a data line, a first passivation layer and a common electrode layer disposed on a substrate, the data line is for driving the TFT, the first passivation layer is disposed between the pixel electrode layer and the common electrode layer, the array substrate further comprises a second passivation layer disposed between the common electrode layer and the data line and located in a region corresponding to the data line.

Abstract: A first layer of first vertical light emitting diodes (VLEDs) is printed on a conductor surface. A first transparent conductor layer is deposited over the first VLEDs to electrically contact top electrodes of the first VLEDs. A second layer of second VLEDs is printed on the first transparent conductor layer. Since the VLEDs are printed as an ink, the second VLEDs are not vertically aligned with the first VLEDs, so light from the first VLEDs is not substantially blocked by the second VLEDs when the VLEDs are turned on. A second transparent conductor layer is deposited over the second VLEDs to electrically contact top electrodes of the second VLEDs. By this structure, the first VLEDs are connected in parallel, the second VLEDs are connected in parallel, and the first layer of first VLEDs and the second layer of second VLEDs are connected in series by the first transparent conductor layer.

Abstract: The present invention discloses a package-free and circuit board-free LED device and a method for fabricating the same. The LED device is exempted from the semiconductor package substrate and the printed circuit board and comprises at least one LED chip having two electrodes able to directly connect with external wires and at least one chip unit. A DC power or an AC power is directly electrically connected with the two electrodes through wires to drive the LED device to emit light. The present invention minimizes device components and fabrication steps, effectively reduces cost and promotes reliability and yield.

Abstract: A semiconductor light emitting element includes: an insulating substrate having a plurality of convex portions on a surface thereof; a plurality of light emitting element components having semiconductor laminated bodies that are laminated on the insulating substrate and are separated from one another by a groove that exposes the convex portions; and a connector connecting between the light emitting element components. The light emitting element components include a first light emitting element component and a second light emitting element component. The first light emitting element component is separated from the second light emitting element component with the groove in between, and has a first protrusion that protrudes toward the second light emitting element component. The connector includes a first connector having a shape that straddles the groove and that follows the convex portions, and has a straight section.

Abstract: A package for multiple LED's and for attachment to a substrate includes a body, which includes a top body layer, a cavity disposed through the top body layer and having a floor for bonding to the multiple LED's, and a thermal conduction layer bonded to the top body layer and having a top surface forming the floor of the cavity and a bottom surface. The thermal conduction layer includes a thermally conducting ceramic material disposed between the floor and the bottom surface. The package also includes a plurality of LED bonding pads in direct contact with the floor and configured to bond to the multiple LED's and a plurality of electrical bonding pads in direct contact with the floor, proximate to the LED bonding pads, and in electrical communication with a plurality of electrical contacts disposed on a surface of the body.

Abstract: Exemplary embodiments of the present invention relate to a light-emitting device including a single substrate, at least two light-emitting units disposed on the single substrate, each of the at least two light-emitting units including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a first electrode connected to the first conductivity-type semiconductor layer, and a second electrode connected to the second conductivity-type semiconductor layer, wherein two light-emitting units of the at least two light-emitting units share the first conductivity-type semiconductor layer.

Abstract: A light emitting device and a method of fabricating the same. The light emitting device includes a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells includes a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside.

Abstract: There is provided a method for manufacturing a light emitting diode, LED, matrix (100) comprising the steps of providing with a maintained integrity a conductor sheet (150) with a plurality of component areas (111) interconnected with meandering connection tracks (116), mounting a plurality of LEDs (120) to a respective component area thereby forming a subassembly (100?), trimming and stretching the subassembly thereby straightening the connection tracks such that an m×n LED conductor matrix is formed during the step of stretching.

Abstract: A light emitting module is provided in which color unevenness of illumination light is difficult to occur. An optical member formed from a translucent material having a refractive index higher than air is interposed between a first light emitting part and a second light emitting part. A side surface of the optical member has a region facing a first sealing member, and the region is at least partially in contact with a surface of the first sealing member. The side surface of the optical member has a region facing a second sealing member, and the region is at least partially in contact with a surface of the second sealing member. In plan view, an upper surface of the optical member does not substantially overlap either of an upper surface of a first light emitting element or an upper surface of a second light emitting element.

Abstract: Provided is a white LED device. The white LED device includes a blue LED chip configured to emit blue light of a wavelength range of about 440 nm to 490 nm, a yellow phosphor formed on the blue LED chip and excited by the blue light to emit yellow light of a wavelength range of about 560 nm to 615 nm, a green LED chip configured to emit green light of a wavelength range of about 500 nm to 560 nm, and a red phosphor formed on the green LED chip and excited by the green light to emit red light of a wavelength range of about 615 nm to about 670 nm.

Abstract: A flexible light sheet includes a thin substrate that allows light to pass through it, a transparent first conductor layer overlying the substrate, an array of vertical light emitting diodes (VLEDs) printed as an ink over the first conductor layer, each of the VLEDs having a bottom electrode electrically contacting the first conductor layer, a dielectric material between the VLEDs overlying the first conductor layer, and a transparent second conductor layer overlying the VLEDs and dielectric layer, each of the VLEDs having a top electrode electrically contacting the transparent second conductor layer. Each individual VLED may emit light bidirectionally. The VLEDs are illuminated by a voltage differential between the first conductor layer and the second conductor layer such that bidirectional light passes through the first conductor layer and the second conductor layer. Phosphor layers may be deposited on both sides to create white light using blue VLEDs.

Abstract: An LED package includes a lens, an LED chip securely received and engaged in the lens, and a base with an electrode assembly thereon. A bottom surface of the LED chip is bare. The lens is mounted on the base and the bottom surface of the LED chip electrically and mechanically connects with the electrode assembly.

Abstract: The lamp unit includes a first substrate, a second substrate provided over the first substrate, a light emitting device provided over the second substrate, a first conductive layer and a second conductive layer provided over the second substrate, and at least one wire electrically coupling at least one of the first conductive layer and the second conductive layer to each of the light emitting device. A protective layer is provided over the first substrate and the second substrate and surrounding the light emitting device and the at least one wire, and the upper surface of the protecting layer is located at a position above the highest point of the at least one wire.

Abstract: An exemplary light emitting diode (LED) package includes a substrate, a first electrode and a second electrode embedded in the substrate and spaced from each other, and an LED die mounted on a top surface of the substrate. The substrate also includes a bottom surface. Top ends of the first and second electrodes are exposed at the top surface of the substrate, and bottom ends of the first and second electrodes are exposed at the bottom surface of the substrate. An oxidation-resistant metal coating layer is formed on a top face of each of the first and second electrodes. The LED die is electrically connected to the first and second electrodes via the two oxidation-resistant metal coating layers.

Abstract: A light-emitting element, comprises: a substrate; a light-emitting semiconductor stack over the substrate and comprising an active layer; and a Distributed Bragg reflective unit under the substrate comprising a first Distributed Bragg reflective structure under the substrate and comprising a first number of pairs of alternately stacked first sub-layers and second sub-layers, and a second Distributed Bragg reflective structure under the first Distributed Bragg reflective structure and comprising a second number of pairs of alternately stacked third sub-layers and fourth sub-layers, wherein the first number is different from the second number.

Abstract: A light emitting diode module includes a substrate, a light emitting diode die, a transparent layer, a phosphor material layer and a lens layer. The light emitting diode die is disposed on the substrate. The transparent layer disposed on the light emitting diode die. The phosphor material layer disposed on the transparent layer. The lens layer disposed on the phosphor material layer.

Abstract: Oxetane-containing compounds, and compositions of oxetane-containing compounds together with carboxylic acids, latent carboxylic acids, and/or compounds having carboxylic acid and latent carboxylic acid functionality are provided. The oxetane-containing compounds and compositions thereof are useful as adhesives, sealants and encapsulants, particularly for components, and in the assembly, of LED devices.

Abstract: A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.

Abstract: A light emitting device includes a support member having a mounting surface. The support member includes an insulating member having top surface and a plurality of side surfaces, a first metal pattern disposed on the top surface of the insulating member, and a second metal pattern disposed on the side surface of the insulating member such that a side surface of the second metal pattern is continuous with a top surface of the first metal pattern. The light emitting device further includes a light emitting element mounted on the mounting surface at a location of the first metal pattern, and a bonding member that bonds the light emitting element to the mounting surface. The bonding member covers at least a portion of the first metal pattern and at least a portion of the second metal pattern.

Abstract: A light-emitting element that includes a first wavelength conversion unit and a second wavelength conversion unit. The first wavelength conversion unit includes a ceramic containing, as a primary component, a pyrochlore-type compound represented by A1B1Ow1. The second wavelength conversion unit includes a ceramic containing, as a primary component, a pyrochlore-type compound represented by A2B2Ow2. A1 and A2 each include at least one element selected from the group consisting of La, Y, Gd, Yb and Lu, and 0.001 mol % to 5 mol % of Bi. B1 and B2 each include at least one element selected from the group consisting of Sn, Zr and Hf. The content of La in A1 is higher than the content of La in A2. The contents of Y, Gd, and Lu in A2 are higher than the contents of Y, Gd and Lu in A1.

Abstract: A semiconductor light-emitting device includes a light-emitting structure that includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, an electrode layer contacting one of the first conductive semiconductor layer and the second conductive semiconductor layer, and a bonding conductive layer connected to the electrode layer. The bonding conductive layer includes a main bonding layer having a recess area defined by a stepped portion on a surface opposite to a surface facing the electrode layer, and a filling bonding layer filling at least a part of the recess area.

Abstract: In one example embodiment, a semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. The second conductivity-type semiconductor layer and the active layer having at least one contact hole exposing a region of the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes at least one columnar structure disposed in the exposed region of the first conductivity-type semiconductor layer within the at least one contact hole. The semiconductor light emitting device further includes a first electrode disposed on the exposed region of the first conductivity-type semiconductor layer in which the at least one columnar structure is disposed, the first electrode being connected to the first conductivity-type semiconductor layer.

Abstract: A light-emitting element includes two electrically conductive layers, a flexible insulating layer, a light-emitting chip and an encapsulating body. A groove is formed between the electrically conductive layers. The flexible insulating layer is disposed within the groove and links the electrically conductive layers. The light-emitting chip is placed on one of the electrically conductive layers or crossing over the flexible insulating layer. The light-emitting chip is electrically connected to the electrically conductive layers and covered by the encapsulating body.

Abstract: Disclosed is a light emitting device including a conductive substrate, a first electrode layer disposed on the conductive substrate, a light emitting structure disposed on the first electrode layer, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, a second electrode layer electrically connected to the second semiconductor layer, and an anti-crack layer disposed on a boundary on which the light emitting structure is segmented on a chip basis, wherein the anti-crack layer is disposed under the light emitting structure and includes a metal material contacting the light emitting structure.

Abstract: Disclosed is a light emitting device including a conductive substrate, a first electrode layer disposed on the conductive substrate, a light emitting structure disposed on the first electrode layer, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a second electrode layer electrically connected to the second semiconductor layer, wherein the first electrode layer includes a transparent electrode layer disposed between the conductive substrate and the first semiconductor layer, and an ohmic layer comprising a plurality of metal contact portions vertically passing through the transparent electrode layer, wherein each metal contact portion includes AuBe.

Abstract: Disclosed is a light emitting device including a conductive substrate, a first electrode layer disposed on the conductive substrate, a light emitting structure disposed on the first electrode layer, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a second electrode layer electrically connected to the second semiconductor layer, wherein the first electrode layer includes a metal electrode layer disposed on the conductive substrate, a transparent electrode layer disposed on the metal electrode layer, and a plurality of contact portions extending from the metal electrode layer, the contact portions vertically passing through the transparent electrode layer and contacting the light emitting structure, wherein the contact portions are spaced from one another by a predetermined distance.

Abstract: An alternating current light emitting diode flip chip is provided. The flip chip includes an alternating current light emitting diode chip having a first bond pad and a second bond pad formed thereon. A first solder ball is disposed on the first bond pad and a second solder ball is disposed on the second bond pad. A flip-chip bonding process is performed to bond a carrier substrate with the first solder ball and the second solder ball.

Abstract: Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

Abstract: A light-emitting diode includes at least two light emitting cells disposed on a substrate and spaced apart from each other, wherein each of the at least two light emitting cells includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. Each of the at least two light emitting cells includes a cathode disposed on the first conductivity-type semiconductor layer, an anode disposed on the second conductivity-type semiconductor layer, and the cathode of a first light emitting cell of the at least two light emitting cells is electrically connected in series to the anode of a second light emitting cell of the at least two light emitting cells adjacent to the first light emitting cell by an interconnecting section.

Abstract: A LED module includes a substrate, a LED chip supported on the substrate, a metal wiring installed on the substrate, the metal wiring including a mounting portion on which the LED chip is mounted, an encapsulating resin configured to cover the LED chip and the metal wiring, and a clad member configured to cover the metal wiring to expose the mounting portion, the encapsulating resin arranged to cover the clad member.

Abstract: Provided is a light emitting device. The light emitting device comprises: In one embodiment, a light emitting device includes: a light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and a conductive support member under the light emitting structure. The conductive support member comprises a first conductive support member and a second conductive support member. The second conductive support member has a thermal conductivity higher than that of the first conductive support member.

Abstract: A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer.

Abstract: A flexible lighting assembly 100, a luminaire, a method of manufacturing a flexible layer 102 and a use of the flexible layer 102 is provided. The flexible lighting assembly 100 comprises a flexible layer 102 of a flexible polymer and comprises a C light source 108 which is thermally coupled to the flexible layer 102. The flexible layer 102 comprises boron nitride particles 106 that have a hexagonal crystal structure.

Abstract: The invention provides a primer composition which adheres a substrate mounting an optical semiconductor device and a cured material of an addition reaction curing silicone composition that encapsulates the optical semiconductor device includes (A) an acrylic resin containing either one or both of an acrylate ester and a methacrylate ester that contains one or more SiCH?CH2 groups in the molecule, and (B) solvent. There can be provided a primer composition in which the adhesion between a substrate mounting an optical semiconductor device and a cured material of an addition reaction curing silicone composition that encapsulates the optical semiconductor device can be improved, the corrosion of a metal electrode formed on the substrate can be prevented, and the heat resistance of a primer itself can be improved.

Abstract: The invention relates to polyamide composition comprising at least one polyamide featuring a melting temperature (Tm), at least one metal oxide selected from magnesium oxide, zinc oxide and calcium oxide, and titanium dioxide, said composition featuring an intrinsic melt viscosity of below 800 Pa·s as measured according to ASTM D3835-08 at a moisture content as measured according to ASTM D6869-03 in the range of 150-500 ppm at a shear rate of 400 s?1 and at a temperature ranging from [(Tm max) +10° C.] to [(Tm max)+20° C.] where (Tm max) is the highest of all melting temperatures(Tm). Invented compositions feature high reflectivity in the molded part with high retention of whiteness and reflectivity after heat aging. This unique combination of properties makes the compositions according to the invention most suitable for LED applications.

Abstract: A semiconductor portion of a semiconductor device includes a semiconductor layer with a drift zone of a first conductivity type and at least one impurity zone of a second, opposite conductivity type. The impurity zone adjoins a first surface of the semiconductor portion in an element area. A connection layer directly adjoins the semiconductor layer opposite to the first surface. At a distance to the first surface an overcompensation zone is formed in an edge area that surrounds the element area. The overcompensation zone and the connection layer have opposite conductivity types. In a direction vertical to the first surface, a portion of the drift zone is arranged between the first surface and the overcompensation zone. In case of locally high current densities, the overcompensation zone injects charge carriers into the semiconductor layer that locally counter a further increase of electric field strength and reduce the risk of avalanche breakdown.

Abstract: Embodiments of the present invention provide an IGBT, which relates to the field of integrated circuit manufacturing, and may improve a problem of tail current when the IGBT is turned off. The IGBT includes a cell region on a front surface, a terminal region surrounding the cell region, an IGBT drift region of a first conductivity type, and an IGBT collector region on a back surface. The IGBT collector region is connected to the IGBT drift region and under the IGBT drift region. The IGBT drift region includes a first drift region under the cell region and a second drift region under the terminal region. The IGBT collector region includes a cell collector region of a heavily doped second conductivity type under the first drift region and a non-conductive isolation region adjacent to the cell collector region.

Abstract: In a semiconductor device, gate electrodes in a first group are connected with a first gate pad and gate electrodes in a second group are connected with a second gate pad. The gate electrodes in the first group and the gate electrodes in the second group are controllable independently from each other through the first gate pad and the second gate pad. When turning off, after a turn-off voltage with which an inversion layer is not formed is applied to the gate electrodes in the second group, a turn-off voltage with which an inversion layer is not formed is applied to the gate electrodes in the first group.

Abstract: A reverse blocking semiconductor device includes a base region of a first conductivity type and a body region of a second, complementary conductivity type, wherein the base and body regions form a pn junction. Between the base region and a collector electrode an emitter layer is arranged that includes emitter zones of the second conductivity type and at least one channel of the first conductivity type. The channels extend through the emitter layer between the base region and the collector electrode and reduce the leakage current in a forward blocking state.

Abstract: A method for forming a double step surface on a semiconductor substrate includes, with an etching process used in a Metal-Organic Chemical Vapor Deposition (MOCVD) process, forming a rough surface on a region of a semiconductor substrate. The method further includes, with an annealing process used in the MOCVD process, forming double stepped surface on the region of the semiconductor substrate.