Abstract: A method for making an ablated electrically insulating layer on a semiconductor substrate. A first relatively thin layer of at least an undoped glass or undoped oxide is deposited on a surface of a semiconductor substrate having n-type doping. A first relatively thin semiconductor layer having at least one substance chosen from amorphous semiconductor, nanocrystalline semiconductor, microcrystalline semiconductor, or polycrystalline semiconductor is deposited on the relatively thin layer of at least an undoped glass or undoped oxide. At least a layer of borosilicate glass or borosilicate/undoped glass stack is deposited on the relatively thin semiconductor layer. The at least borosilicate glass or borosilicate/undoped glass stack is selectively ablated with a pulsed laser, and the relatively thin semiconductor layer substantially protects the semiconductor substrate from the pulsed laser.

Abstract: A semiconductor thin-film and method for producing a semiconductor thin-films comprising a metallic salt, an ionic compound in a non-aqueous solution mixed with a solvent and processing the stacked layer in chalcogen that results in a CZTS/CZTSS thin films that may be deposited on a substrate is disclosed.

Abstract: An interconnected arrangement of photovoltaic cells is achieved using laminating current collector electrodes. The electrodes comprise a pattern of conductive material extending over a first surface of sheetlike substrate material. The first surface comprises material having adhesive affinity for a selected conductive surface. Application of the electrode to the selected conductive surface brings the first surface of the sheetlike substrate into adhesive contact with the conductive surface and simultaneously brings the conductive surface into firm contact with the conductive material extending over first surface of the sheetlike substrate. Use of the laminating current collector electrodes allows facile and continuous production of expansive area interconnected photovoltaic arrays.

Abstract: Photovoltaic modules may include multiple flexible thin film photovoltaic cells electrically connected in series, and laminated to a substantially transparent top sheet having a conductive grid pattern facing the cells. Methods of manufacturing photovoltaic modules including integrated multi-cell interconnections are provided. Methods may include steps of coordinating, integrating, and registering multiple rolls of substrates in continuous processes.

Abstract: A solar module riser assembly that is configured to allow a solar module attached thereto to fall-to-flat when not being forced into an angular position is provided. A riser assembly includes a riser support and a tube support attached to the riser support. A torque tube may extend across a plurality of riser assemblies and be retained by tube supports attached to each of the riser assemblies. A torque tube support is configured to rotate about the riser support and thereby position a solar module coupled thereto at an optimum angular orientation for solar exposure and track the sun. A first riser and second riser may be configured on opposing sides of a central drive device and lever arms attached to link bars drive tube supports when the link bar is moved. The first and second riser may be configured to create equal and opposite force on the link bar.

Abstract: The invention relates to a hybrid solar panel comprising: photovoltaic elements (1) having a front face and a rear face; a heat exchanger (E) arranged opposite the rear face of said photovoltaic elements (1); and a cooling fluid circulating in said exchanger (E) in such a way as to cool the photovoltaic elements (1), said exchanger (E) comprising a heat exchange region (ZE) through which said fluid flows, arranged beneath said photovoltaic elements (1), said exchange region comprising elements (20) that enable the flow of the fluid to be disrupted in such a way as to stimulate the heat exchanges in the exchange region (ZE).

Abstract: A solar energy collector includes a generally tubular housing or multiple tubular housings each having an open end for receipt of solar rays which are then reflected from a generally conical mirror within the housing onto solar cells lining the inside surface of the housing. Various mechanisms are utilized to favorably orient the housing or otherwise direct the solar rays and to maximize the incidence of reflected solar rays onto solar cells.

Abstract: A solar concentrator assembly includes a light splitting element, a light converging element, an optical fiber unit and a photoelectric unit. The light converging element is located between the light splitting element and the optical fiber unit. The optical fiber unit is located between the light converging element and the photoelectric unit. The light splitting element splits sunlight into light of different wavelengths. The light converging element converges the split light onto different focal points. The optical fiber unit transmits the converged light to the photoelectric unit. The photoelectric unit converts the light into electrical energy.

Abstract: A sensor and its fabrication method are provided, the sensor includes: a base substrate, a group of gate lines and a group of data lines arranged as crossing each other, and a plurality of sensing elements arranged in an array and defined by the group of gate lines and the group of data lines, each sensing element including a TFT device and a photodiode sensing device, wherein a channel region of the TFT device is inverted and the source and drain electrodes are positioned between the active layer and the gate electrode. The sensor reduces the number of mask as well as the production cost and simplifies the production process, thereby significantly improves the production capacity and the defect-free rate.

Abstract: An embodiment of a geiger-mode avalanche photodiode includes: a body of semiconductor material, having a first surface and a second surface; a cathode region of a first type of conductivity, which extends within the body; and an anode region of a second type of conductivity, which extends within the cathode region and faces the first surface, the anode and cathode regions defining a junction. The anode region includes at least two subregions, which extend at a distance apart within the cathode region starting from the first surface, and delimit at least one gap housing a portion of the cathode region, the maximum width of the gap and the levels of doping of the two subregions and of the cathode region being such that, by biasing the junction at a breakdown voltage, a first depleted region occupies completely the portion of the cathode region within the gap.

Abstract: Techniques for using photo detectors as tunable proximity sensors for detection of target objects and ascertaining their distance from the proximity sensors are disclosed. In one embodiment, the techniques may be realized as a proximity sensor system including a photo detector having a first doped region, a gate, a second doped region and a light absorbing region, a control circuitry for generating a plurality of control signals to be applied to the photo detector, and a signal detector to detect an output signal from the photo detector.

Abstract: An optocoupler having optical lens layer is disclosed. The optocoupler may comprise an optical emitter, an optical receiver, an isolation layer, a lens layer and a substantially transparent encapsulant. The lens layer may be integrally formed within the optical receiver. Alternatively, the lens layer may be formed integrally with the isolation layer, or the lens layer may be an optical film attached on the optical receiver. The substantially transparent encapsulant may encapsulate at least partially the optical emitter, the optical receiver and the isolation layer. The isolation layer may be inserted to the substantially transparent encapsulant, making the substantially transparent encapsulant into two compartments. In another embodiment, an electronic system having optocoupler is disclosed.

Abstract: A method of fabricating a semiconductor device includes forming an absorber on a substrate, and supporting a cap layer over the substrate to define a cavity between the substrate and the cap layer in which the absorber is located. The method further includes forming a lens layer on the cap layer. The lens layer is spaced apart from the cavity and defines a plurality of grooves and an opening located over the absorber.

Abstract: A method and apparatus for forming a crystalline cadmium stannate layer of a photovoltaic device by heating an amorphous layer in the presence of hydrogen gas.

Abstract: The present disclosure relates to a method of manufacturing a semiconductor light emitting device, comprising: forming a finger electrode in electrical communication with a second semiconductor layer; forming, on the finger electrode, a non-conductive reflective layer made up of a multi-layer dielectric film, for reflecting light from the active layer towards a first semiconductor layer on the side of a growth substrate, with the non-conductive reflective layer including a bottom layer formed by chemical vapor deposition and at least two layers formed by physical vapor deposition; and forming an electrical connection, passing through the non-conductive reflective film and being connected the finger electrode.

Abstract: A semiconductor light emitting device includes a substrate having first and second electrode patterns on at least one surface thereof, a light emitting structure on a surface of the substrate, a first electrode structure, a second electrode structure, an insulating layer, a first connection portion connecting the first electrode structure and the first electrode pattern, and a second connection portion connecting the second electrode structure extending outwardly from the light emitting structure and the second electrode pattern.

Abstract: A light emitting structure includes lower and upper semiconductor layers having different conductive types, and an active layer disposed between the lower and upper semiconductor layers. The light emitting structure is provided on the substrate. A first electrode layer provided on the upper semiconductor layer includes a first adhesive layer and a first bonding layer overlapping each other. A reflective layer is not provided between the first adhesive layer and the first bonding layer.

Abstract: The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of lenses suspended in a polymer deposited or attached over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes are substantially spherical, and have a ratio of mean diameters or lengths between about 10:1 and 2:1. The diodes may be LEDs or photovoltaic diodes, and in some embodiments, have a junction formed at least partially as a hemispherical shell or cap.

Abstract: The present invention provides an electronic apparatus, such as a lighting device comprised of light emitting diodes (LEDs) or a power generating apparatus comprising photovoltaic diodes, which may be created through a printing process, using a semiconductor or other substrate particle ink or suspension and using a lens particle ink or suspension. An exemplary apparatus comprises a base; at least one first conductor; a plurality of substantially spherical or optically resonant diodes coupled to the at least one first conductor; at least one second conductor coupled to the plurality of diodes; and a plurality of substantially spherical lenses suspended in a polymer attached or deposited over the diodes. The lenses and the suspending polymer have different indices of refraction. In some embodiments, the lenses and diodes have a ratio of mean diameters or lengths between about 10:1 and 2:1.

Abstract: A semiconductor light emitting element in which changes in light distribution characteristics due to inclination angle of side surfaces are suppressed. The semiconductor light emitting element includes a semiconductor structure having a light extracting surface as its upper surface; a reflecting layer disposed on side surfaces of the semiconductor structure; and a positive electrode and a negative electrode disposed on a lower surface of the semiconductor structure. Side surfaces of the semiconductor structure are inclined, expanding upward from the lower surface to the upper surface. At least a portion of each side surface includes a plurality of protrusions, a plurality of recesses, or a combination thereof.

Abstract: A method for providing (Al,Ga,In)N thin films on Ga-face c-plane (Al,Ga,In)N substrates using c-plane surfaces with a miscut greater than at least 0.35 degrees toward the m-direction. Light emitting devices are formed on the smooth (Al,Ga,In)N thin films. Devices fabricated on the smooth surfaces exhibit improved performance.

Abstract: Disclosed are a light emitting device, a method of fabricating a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a first conductive semiconductor layer (112), an InxGa1-xN layer (where, 0<x?1) (151) on the first conductive semiconductor layer (112), a GaN layer (152) on the InxGa1-xN layer (151), a first Aly1Ga1-y1N layer (where, 0<y1?1) (153) on the GaN layer (152), an active layer (114) on the first Aly1Ga1-y1N layer (153), and a second conductive semiconductor layer (116) on the active layer (114).

Abstract: The present invention relates to light-emitting diodes. A light-emitting diode according to an exemplary embodiment of the present invention includes a first group including a plurality of first light emitting cells connected in parallel to each other, and a second group including a plurality of second light emitting cells connected in parallel to each other. Each first light emitting cell and second light emitting cell has a semiconductor stack that includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer. At least two light emitting cells of the first light emitting cells share the first conductivity-type semiconductor layer, and at least two light emitting cells of the second light emitting cells share the first conductivity-type semiconductor layer.

Abstract: Disclosed are a light-emitting diode and a method for manufacturing the same. A light-emitting diode according to one aspect of the present invention includes: a first conductive clad layer; a light-scattering pattern configured, in the first conductive clad layer, having a refractive index different from that of the first conductive clad layer; an active layer located under the first conductive clad layer; a second conductive clad layer located under the active layer; a first electrode configured to be electrically connected to the first conductive clad layer; and a second electrode configured to be electrically connected to the second conductive clad layer. The light-scattering pattern can improve light extraction efficiency.

Abstract: A light emitting diode package, a light source module and a backlight unit including the same are provided. A plurality of light emitting diode packages are arranged on a printed circuit board without interference therebetween, by forming lines therein.

Abstract: Illumination device comprising at least one LED and at least one color converter comprising at least one organic fluorescent colorant in a matrix consisting essentially of polystyrene or polycarbonate, wherein LED and color converter are present in a remote phosphor arrangement.

Abstract: A silicone protective coating for an electronic light source and a method for applying the coating over an exposed or outer surface of the electronic light source assembled as part of or mounted to a circuit board or other substrate.

Abstract: A light-emitting diode (“LED”) device has an LED chip attached to a substrate. The terminals of the LED chip are electrically coupled to leads of the LED device. Elastomeric encapsulant within a receptacle of the LED device surrounds the LED chip. A second encapsulant is disposed within an aperture of the receptacle on the elastomeric encapsulant.

Abstract: A method for making light emitting diode includes following steps. A substrate having an epitaxial growth surface is provided. A first semiconductor layer, an active layer, and a second semiconductor layer is epitaxially grown on the epitaxial growth surface of the substrate in that sequence. A cermet layer is formed on the second semiconductor layer. The substrate is removed to form an exposed surface. A first electrode is applied to cover the entire exposed surface of the first semiconductor layer. A second electrode is applied to electrically connected to the second semiconductor layer.

Abstract: A light emitting package includes a circuit board, a light emitting chip disposed on the circuit board and electrically connected to the circuit board, a resin layer disposed on the light emitting chip, and a fluorescent layer disposed on the resin layer. The light emitting chip is disposed between the resin layer and the circuit board. The resin layer is disposed between the light emitting chip and the fluorescent layer. For a light, a refractive index of the resin layer is smaller than a refractive index of the light emitting chip and is larger than a refractive of the fluorescent layer.

Abstract: The light-emitting diode includes first and second layers of semiconductor material, having opposite conductivity types, an active light-emitting area located between the first and second layers of semiconductor material, an electrode arranged on the first layer of semiconductor material and a photonic crystal formed in the first layer of semiconductor material. The photonic crystal and the electrode are separated by a distance optimized to simultaneously promote the electric injection and minimize the light absorption in the LED.

Abstract: An LED package structure for preventing lateral light leakage includes a substrate unit, a light-emitting unit, a light-transmitting unit and a light-shielding unit. The substrate unit includes a circuit substrate. The light-emitting unit includes at least one LED chip disposed on the circuit substrate and electrically connected to the circuit substrate. The light-transmitting unit includes a light-transmitting gel body disposed on the circuit substrate for enclosing the LED chip. The light-transmitting gel body has a first light-transmitting portion disposed on the circuit substrate for enclosing the LED chip and at least one second light-transmitting portion projected upwardly from the first light-transmitting portion and corresponding to the LED chip, and the second light-transmitting portion has a light output surface. The light-shielding unit includes a light-shielding gel body disposed on the circuit substrate for exposing the light output surface of the second light-transmitting portion.

Abstract: A light emitting element structure includes a light emitting unit configured to emit light; a package unit configured to cover the light emitting unit; a transparent light guide structure arranged on the package unit; and a first anti-reflection film arranged on the transparent light guide structure, wherein a thickness of the first anti-reflection film is an odd multiple of ?/4n, ? is a wavelength of light passing through the package unit from the light emitting unit, and n is a refractive index of the first anti-reflection film.

Abstract: The light emitting device includes a light emitting chip, and an optical lens provided over the light emitting chip. The optical lens includes an incident surface into which a light emitted from the light emitting chip is incident, a recess portion opposite to the incident surface and recessed in a direction of the incident surface, an exit surface provided at a peripheral portion of the recess portion to output a light incident through the incident surface, and a convex portion protruding between the recess portion and the exit surface and connected with at least one of the recess portion and the exit surface through an inflection point. The convex portion is located inward of a line segment ranging from the light emitting chip to a first inflection point provided at an outermost portion of the recess portion.

Abstract: A light emitting structure including a first conductive semiconductor layer, an active layer, and a second conductive semiconductor layer. A first electrode is electrically coupled to the first conductive semiconductor layer. A current blocking layer is provided adjacent to the light emitting structure, and includes a top surface disposed in the first conductive semiconductor layer by passing through the active layer. A first metal layer is provided over the current blocking layer and contacts the first conductive semiconductor layer, and a reflective electrode is electrically coupled to the second conductive semiconductor layer.

Abstract: Provided is a multi-layer reflective coating for application to a lighting housing assembly, including a polymer substrate adjacent a polymer base coat layer applied to the lighting housing. Atop the polymer base coat layer is an aluminum adhesion layer, followed by a diffusive barrier layer, and a silver reflective layer. The aluminum adhesion layer promotes adhesion between the polymer base coat layer and the silver reflective layer. The diffusive barrier layer prevents aluminum and silver interaction, which could form a silver and aluminum alloy. A spectrum tunable layer is applied atop the silver reflective layer for spectrum tuning the silver reflective layer for maximum compatibility with a light emitting diode (LED) lighting source.

Abstract: An optoelectronic component includes a carrier; a semiconductor chip having an active layer that generates radiation and is arranged on a carrier; a dispersed material including a matrix material and particles embedded therein arranged on the semiconductor chip and/or the carrier at least in regions, and is integral therewith; and a separating edge between the dispersed material and matrix material formed at a chip edge of the semiconductor chip.

Abstract: Provided is a light emitting semiconductor device comprising a flexible dielectric layer, a conductive layer on at least one side of the dielectric layer, at least one cavity or via in the dielectric substrate, and a light emitting semiconductor supported by the cavity or via. Also provided is a support article comprising a flexible dielectric layer, a conductive layer on at least one side and at least one cavity or via in the dielectric substrate. Further provided is a flexible light emitting semiconductor device system comprising the above-described light emitting semiconductor device attached to the above-described support article.

Abstract: A light-emitting device comprises an active-region sandwiched between an n-type layer and a p-type layer, that allows lateral carrier injection into the active-region so as to reduce heat generation in the active-region and to minimize additional forward voltage increase associated with bandgap discontinuity. In some embodiments, the active-region is a vertically displaced multiple-quantum-well (MQW) active-region. A method for fabricating the same is also provided.

Abstract: The present invention provides a heat conducting slug having a multi-step structure, which is installed to an LED package to dissipate heat generated from a light emitting chip to the outside. The heat conducting slug includes a first slug, a second slug formed on the first slug, and a third slug formed on the second slug, wherein the light emitting chip is mounted to the third slug, and the second and third slugs respectively shaped to have edges are arranged to cross each other. In this configuration, heat generated from a light emitting chip follows a heat dissipation path, in which the heat is gathered at edges of one slug and dissipated therefrom and then gathered toward edges of another slug, arranged to cross the one slug. Accordingly, the entire heat dissipation path is not concentrated at a specific region but generally distributed widely, thereby improving a heat dissipation effect of the heat conducting slug.

Abstract: Solid state lighting devices and associated methods of thermal sinking are described below. In one embodiment, a light emitting diode (LED) device includes a heat sink, an LED die thermally coupled to the heat sink, and a phosphor spaced apart from the LED die. The LED device also includes a heat conduction path in direct contact with both the phosphor and the heat sink. The heat conduction path is configured to conduct heat from the phosphor to the heat sink.

Abstract: According to one embodiment, there is provided a light-emitting device including a light-emitting section, a thermal radiation member, and a heat conduction layer. The light-emitting section includes a mounting substrate section and a light-emitting element section. The mounting substrate section includes a substrate, a first metal layer, and a second metal layer. The substrate includes a first principal plane including a mounting region and a second principal plane. The first metal layer includes mounting patterns provided in the mounting region. The light-emitting element section includes semiconductor light-emitting elements and a wavelength conversion layer. The semiconductor light-emitting elements are connected to the mounting patterns. The luminous existence of the light-emitting element section is equal to or higher than 10 lm/mm2 and equal to or lower than 100 lm/mm2. The thermal radiation member has an area equal to or larger than five times the area of the mounting region.

Abstract: A thermoelectric micro-platform includes a suspended micro-platform, the suspended micro-platform being configured as a support layer with a device layer disposed thereon. Two arrays of series-connected thermoelectric devices are disposed partially on the micro-platform. One array is operated as Peltier coolers and the other array is operated as Seebeck sensors.

Abstract: A photoelectric cell includes at least one photoelectric conversion module. The at least one photoelectric conversion module includes a first photoelectric conversion element and a second photoelectric conversion element. The first photoelectric conversion element includes a first absorbing part and a first non-absorbing part. An angle between the first absorbing part and the first non-absorbing part is less than 90 degrees. The second photoelectric conversion element includes a second non-absorbing part and a second absorbing part electrically connected with the second absorbing part. An angle between the second absorbing part and the second non-absorbing part is less than 90 degrees. The first absorbing part is electrically connected with the second absorbing part.

Abstract: A piezoelectric device includes a piezoelectric vibrating piece, a base plate, and a lid plate. The base plate includes one principal surface where the piezoelectric vibrating piece is placed and includes a connecting electrode electrically connected to the extraction electrode, and another principal surface including a mounting terminal. The lid plate seals the vibrator. The lid plate seals the vibrator. At least a part of the mounting terminal includes a first metal film, a second metal film, and an electroless plating film. The second metal film is formed to cover the first metal film or is formed at a part of a surface of the first metal film. The second metal film has a different area from the first metal film. The electroless plating film is formed at least on a surface of the second metal film by electroless plating.

Abstract: In one embodiment, a method of deforming a MEMS structure includes providing a base layer, providing a first piezoelectric slab operably connected to a surface of the base layer, determining a desired deformation of the base layer, applying a first potential to a first electrode operably connected to the first piezoelectric slab, applying a second potential to a second electrode operably connected to the first piezoelectric slab, and deforming the base layer with the first piezoelectric slab using the applied first potential and the applied second potential based upon the determined desired deformation.

Abstract: Water-responsive composite materials are provided containing a polymeric matrix and a water-responsive gel integrated into the polymeric matrix. The water-responsive gel can include a polyol or an alkoxylated polyol crosslinked by reversibly hydrolysable bonds, such as borate ester bonds. The polymeric matrix can include conjugated polymers such as poly(pyrrole) containing polymers. The composite material is capable of rapid actuation in the presence of a water gradient and can exhibit power densities greater than 1 W/kg. Methods of making water-responsive composite materials are provided, including by electropolymerization. Devices containing water-responsive composite materials are provided for sensing, locomotion, and power generation.

Abstract: Embodiments herein provide a magnetic tunnel junction (MTJ) formed between metal layers of a semiconductor device. Specifically, provided is an approach for forming the semiconductor device using only one or two masks, the approach comprising: forming a first metal layer in a dielectric layer of the semiconductor device, forming a bottom electrode layer over the first metal layer, forming a MTJ over the bottom electrode layer, forming a top electrode layer over the MTJ, patterning the top electrode layer and the MTJ with a first mask, and forming a second metal layer over the top electrode layer. Optionally, the bottom electrode layer may be patterned using a second mask. Furthermore, in another embodiment, an insulator layer (e.g., manganese) is formed atop the dielectric layer, wherein a top surface of the first metal layer remains exposed following formation of the insulator layer such that the bottom electrode layer contacts the top surface of the first metal layer.

Abstract: A hybrid oxide capping layer (HOCL) is disclosed and used in a magnetic tunnel junction to enhance thermal stability and perpendicular magnetic anisotropy in an adjoining reference layer. The HOCL has an interface oxide layer adjoining the reference layer and one or more transition metal oxide layers wherein each of the metal layers selected to form a transition metal oxide has an absolute value of free energy of oxide formation less than that of the metal used to make the interface oxide layer. One or more of the HOCL layers is under oxidized. Oxygen from one or more transition metal oxide layers preferably migrates into the interface oxide layer during an anneal to further oxidize the interface oxide. As a result, a less strenuous oxidation step is required to initially oxidize the lower HOCL layer and minimizes oxidative damage to the reference layer.

Abstract: This invention relates to methods and an apparatus for detecting quality induced terminations of media streams of real-time communication sessions within a packet-switched network. To enable the determination of the quality of live media streams passing by the tapping points in a network, and to use this information to determine media transmissions being aborted due to bad quality the invention evaluates quality data records of a terminated media stream to detect, whether the media stream was terminated due to bad quality or another reason. Advantageously, a threshold number of quality data records that were generated for the media stream just before termination thereof are considered in the evaluation. In case each of this threshold number of quality data records yields a bad quality of the media stream, the termination of the media stream may be judged or assumed to be induced due to bad quality.