Abstract: A switch includes conductive first and second prongs that have upper portions located within a switch casing and lower portions exposed therefrom, a button mounted pivotally on the casing having a protrusion rod and a connection rod connected to the protrusion rod; and an alloy plate disposed within the casing having one end connected securely to the upper portion of the second prong and a free end operably connected to the connection rod. The free end is provided with an upper electrical contact in alignment with a lower electrical contact of the first prong. An elastic member has a first straight abutment portion in resiliently abutment against a fixing element within the casing, a second straight that resiliently abuts against the free end of the alloy plate, whereby, the alloy plate is displaced from its initial position when an overload current flows through the switch in a switch-on position.

Abstract: An inner wall for partitioning a storage chamber is disposed in a case. A switching member operating a movable contact inside the storage chamber is positioned inside a penetrating portion formed between an inner recess formed on an inner wall and a first cutout portion formed in an inner clamping piece of a lid body. The switching member is formed integrally with a flange portion, and the flange portion closes the penetrating portion. As a result, dust, dirt and moistures are unlikely to enter the storage chamber through the penetrating portion.

Abstract: An electromagnetic contactor includes a contact device having a contact housing case formed from an insulating material and housing a pair of fixed contacts and a movable contact disposed to be capable of contacting to and separating from the pair of fixed contacts. On an inner peripheral surface of the contact housing case along the movable contact, arc extinguishing permanent magnets magnetized so that magnetic pole faces facing each other have same polarity are disposed to be near the movable contact.

Abstract: A contactor or switch assembly adapted for switching power to a circuit. The housing has internal walls that laterally extend within the interior compartment to define a protection chamber. Current carrying contacts are disposed in the protection chamber of the housing. The current carrying contacts include conductive bodies that protrude from the housing and are configured to close the circuit. Arc dissipation areas are provided in the protection chamber and are located proximate to the current carrying contacts. Magnets are provided proximate ends of the dissipation areas. The magnets create magnetic flux or a magnetic field that extends across the current carrying contacts. The magnetic flux directs electric arcs radiating from one or more of the current carrying contacts into the arc dissipation areas, thereby increasing the effective distance that the electric arcs travel wherein the electric arcs are dissipated in the dissipation areas.

Abstract: Disclosed is a molded case circuit breaker. The molded case circuit breaker includes include: a case; an interrupter assembly installed in the case, and provided with an arc gas outlet; an exhaustion guiding portion disposed between the interrupter assembly and the terminal portion; an exhaustion cover mounted to the case, with a structure to cover the exhaustion guiding portion; and exhaustion guides spaced from each other in the exhaustion guiding portion, in a direction perpendicular to an arc gas discharge direction, in a state where the gas divergence portion is disposed therebetween, the exhaustion guides forming the arc gas passage together with the gas divergence portion. Under such configuration, arc gas discharged out of the arc gas outlet can be rapidly discharged to outside through the exhaustion guides, without an eddy current.

Abstract: A disclosed electrical relay may include a line electrical terminal adapted for connection to an electrical conductor carrying an electrical voltage, a normally-closed connector and a normally-open connector each having a housing and multiple electrical terminals arranged within a cavity of the housing, and a switching element. The switching element is configured to electrically connect the line electrical terminal to at least one of the electrical terminals of the normally-closed connector when not enabled, and to electrically connect the line electrical terminal to at least one of the electrical terminals of the normally-open connector when enabled. The normally-closed connector and the normally-open connector may be tab header connectors, and may be adapted to receive plug connectors of different devices.

Abstract: An electromagnetic switch includes: a stationary electrical contact; a moveable electrical contact; an actuated member to which the moveable electrical contact is attached for driving the moveable electrical contact into and out of contact with the stationary electrical contact; and a damping interface between the moveable electrical contact and the actuated member.

Abstract: A circuit breaker module includes a faceplate with a number of passages and a number of circuit breakers, each circuit breaker including an operating mechanism, conductor assembly, and a housing assembly. Each circuit breaker housing assembly includes a first body, a second body, and a plurality of pins. The first body defines a cavity. The second body defines a cavity. The first body and the second body have complimentary shapes. At least one of the first body or the second body includes a plurality of pin cavities. The pins and pin cavities disposed in an alignment pattern. The first body and the second body are coupled to each other defining an enclosed space, the enclosed space structured to accommodate an operating mechanism and conductor assembly.

Abstract: The invention relates to a new mechatronic circuit-breaker and its associated triggering method for breaking either alternating currents or direct currents at high voltages.

Abstract: An ion source is provided with a push-out electrode, a pull-out electrode, and a pull-in electrode all for ionizing a sample and accelerating generated ions in a pulsed manner, wherein the push-out electrode and/or the pull-in electrode has a curved surface shape having a depression curved in the direction opposite to the direction of travel of the ions. As a result, a compact ion source capable of temporally and spatially focusing ions and outputting the ions, and a compact time-of-flight mass spectroscope with good detection resolution and detection sensitivity which is provided with the compact ion source can be provided.

Abstract: An electron emission source includes a first electrode, a semiconductor layer, an insulating layer, and a second electrode stacked in that sequence, wherein the semiconductor layer defines a number of holes, the first electrode comprises a carbon nanotube layer, and a portion of the carbon nanotube layer corresponding to the number of holes is suspended on the number of holes.

Abstract: An electron emission device includes a number of electron emission units, wherein each of the number of electron emission units includes a first electrode, an insulating layer, and a second electrode stacked in that sequence, wherein the first electrode is a carbon nanotube composite structure having a carbon nanotube layer and a semiconductor layer stacked together, and the semiconductor layer is sandwiched between the carbon nanotube layer and the insulating layer, the first electrodes in the number of electron emission units are spaced apart from each other, and the second electrodes in the number of electron emission units are spaced apart from each other.

Abstract: An electron emission device includes a number of electron emission units spaced from each other, wherein each of the number of electron emission units includes a first electrode, a semiconductor layer, an insulating layer, and a second electrode stacked with each other, the first electrode includes a carbon nanotube layer, a number of holes defines in the semiconductor layer, and a portion of the carbon nanotube layer suspended on the number of holes.

Abstract: There is provided a radiation generating apparatus having a simple structure and capable of shielding unnecessary radiation, cooling a target, reducing the size and weight of the apparatus, and achieving higher reliability, and a radiation imaging apparatus having the same. A transmission type radiation tube is held inside a holding container filled with a cooling medium. The transmission type radiation tube includes an envelope having an aperture, an electron source arranged inside the envelope so as to face the aperture of the envelope, a target unit for generating a radiation responsive to an irradiation with an electron emitted from the electron source, and a shield member for shielding a part of the radiation emitted from the target unit. The cooling medium contacts at least a part of the shield member.

Abstract: An electron microscope is disclosed which has a laser-driven photocathode and an arbitrary waveform generator (AWG) laser system (“laser”). The laser produces a train of temporally-shaped laser pulses of a predefined pulse duration and waveform, and directs the laser pulses to the laser-driven photocathode to produce a train of electron pulses. An image sensor is used along with a deflector subsystem. The deflector subsystem is arranged downstream of the target but upstream of the image sensor, and has two pairs of plates arranged perpendicular to one another. A control system controls the laser and a plurality of switching components synchronized with the laser, to independently control excitation of each one of the deflector plates. This allows each electron pulse to be directed to a different portion of the image sensor, as well as to be provided with an independently set duration and independently set inter-pulse spacings.

Abstract: In a SEM device which enables observations under an atmospheric pressure, in the event that a diaphragm is damaged during an observation of a sample, air flows into a charged particle optical barrel from the vicinity of the sample, due to the differential pressure between the inside of the charged particle optical barrel under vacuum and the vicinity of the sample under the atmospheric pressure. At this time, the sample may be sucked into the charged particle optical barrel. In this case, a charged particle optical system and a detector are contaminated thereby, which causes performance degradation or failures of the charged particle microscope. For coping therewith, it is necessary to prevent the charged particle optical barrel from being contaminated, without inducing a time lag, with a simple structure.

Abstract: A beam collimator includes a plurality of lens units that are arranged along a reference trajectory so that a beam collimated to the reference trajectory comes out from an exit of the beam collimator. Each of the plurality of lens units forms a bow-shaped curved gap and is formed such that an angle of a beam traveling direction with respect to the reference trajectory is changed by an electric field generated in the bow-shaped curved gap. A vacant space is provided between one lens unit of the plurality of lens units and a lens unit that is adjacent to the lens unit. The vacant space is directed in a transverse direction of the collimated beam in a cross section that is perpendicular to the reference trajectory. An inner field containing the reference trajectory is connected to an outer field of the plurality of lens units through the vacant space.

Abstract: An exposure pattern is computed which is used for exposing a desired pattern on a target in a charged-particle multi-beam processing apparatus so as to match a reference writing tool, possible of different type: The desired pattern is provided as a graphical representation suitable for the reference tool, such as a raster graphics, on the image area on the target. A convolution kernel is used which describes a mapping from an element of the graphical representation to a group of pixels which is centered around a nominal position of said element. A nominal exposure pattern is calculated by convolution of the graphical representation with the convolution kernel, said nominal exposure pattern being suitable to create a nominal dose distribution on the target when exposed with the processing apparatus.

Abstract: Provided is a plasma processing apparatus that performs a processing on a processing target object using plasma. The plasma processing apparatus includes a processing container and a plasma generating mechanism including a high frequency generator disposed outside of the processing container to generate high frequency waves. The plasma generating mechanism generates plasma in the processing container using the high frequency waves and includes: a high frequency oscillator that oscillates the high frequency waves; a power supply unit that supplies a power to the high frequency oscillator; a waveguide path that propagates the high frequency waves oscillated by the high frequency oscillator to the processing container side which becomes a load side; and a voltage standing wave ratio variable mechanism that varies a voltage standing wave ratio of voltage standing waves formed in the waveguide path by the high frequency waves, according to the power supplied from the power supply unit.

Abstract: A plasma generator according to an embodiment of the present invention is provided to generate a high density and stable plasma at near atmospheric pressure by preventing a transition of plasma to arc. The plasma generator includes a plate-shaped lower electrode for seating a substrate; and a cylindrical rotating electrode on the plate-shaped lower electrode, wherein the cylindrical rotating electrode includes an electrically conductive body that is connected to a power supply and includes a plurality of capillary units on an outer circumferential surface of the electrically conductive body; and an insulation shield layer that is made of an insulation material or a dielectric material, exposes a lower surface of the plurality of capillary units, and shields other parts.

Abstract: Improved designs of target assemblies and darkspace shields are disclosed. Methods of improving darkspace gap in sputtering chambers and sputtering chambers having an improved darkspace gap are also disclosed. Disclosed is a target assembly having a substantially coplanar backing plate and a target are vertically spaced from the darkspace shield.

Abstract: Systems and methods are provided for species detection using mass spectrometry. In various embodiments, a multiple reaction monitoring (MRM) experiment is performed on a sample targeting one or more peptide transitions that are unique to one or more species using a tandem mass spectrometer. One or more measured product ion spectra are received from the tandem mass spectrometer using the processor. The one or more measured product ion spectra are compared to product ions of the one or more peptide transitions that are unique to one or more species using the processor. One or more species of the sample are detected by reporting product ions of the one or more peptide transitions that are unique to one or more species that match the one or more measured product ion spectra using the processor.

Abstract: In a pause time assigned for switching voltage applied to a quadrupole mass filter or other ion transport optical system so as to switch the mass-to-charge ratio of a target ion in an SIM measurement, the polarity of direct-current voltage applied to a pre-quadrupole mass filter is temporarily reversed. The voltage polarity reversal time is changed according to length of the pause time so that the ion intensity can sufficiently rise by the time the next dwell time begins. When the polarity of the voltage applied to the pre-quadrupole mass filter is reversed, the electric charges which lie on an insulating film of contaminants or other substances attached to the surface of the pre-quadrupole mass filter or on an insulating support structure are dispersed, whereby the charge-up is eliminated. Since ions are prevented from passing through, charge-up of a main quadrupole mass filter in the subsequent stage is also reduced.

Abstract: An ion guiding device is disclosed comprising a first ion guide which is conjoined with a second ion guide. Ions are urged across a radial pseudo-potential barrier which separates the two guiding regions by a DC potential gradient. Ions may be transferred from an ion guide which has a relatively large cross-sectional profile to an ion guide which has a relatively small cross-sectional profile in order to improve the subsequent ion confinement of the ions.

Abstract: When ions introduced between repeller electrode and extraction electrode are accelerated through flight space, orthogonal acceleration power supply portion applies a designated voltage to a plurality of acceleration electrodes in such a way as to form an acceleration field wherein potential distribution ? along central axis of the acceleration area becomes ?2?/?Z2<0. When ions traverse an acceleration field with this manner of axial potential distribution, in addition to force in the acceleration direction, force pressing towards central axis acts on ions situated away from central axis. This causes ions to be fired through flight space while being focused, and hence to reach detector more efficiently. This makes it possible to improve measurement sensitivity without adding a focusing lens or the like.

Abstract: An object of the present invention is to provide a mass spectrometer having a simple structure and being capable of precisely measuring a total pressure and performing mass spectrometry with high precision. A mass spectrometer according to one embodiment includes a quadrupole configured to selectively pass therethrough an ion of a target gas having a predetermined mass-to-charge ratio among components of a measurement gas ionized by an ion source, an ion detector configured to detect an ion current value based on the ion of the target gas that passes through the quadrupole, a total pressure measurer configured to detect a photoelectric current value based on vacuum ultraviolet light generated when the ion source ionizes the measurement gas, and an arithmetic unit configured to calculate a partial pressure of the target gas by using the photoelectric current value and the ion current value.

Abstract: Mass spectrometry systems or assemblies therefore include an ionizer that includes at least one planar conductor, a mass analyzer with a planar electrode assembly, and a detector comprising at least one planar conductor. The ionizer, the mass analyzer and the detector are attached together in a compact stack assembly. The stack assembly has a perimeter that bounds an area that is between about 0.01 mm2 to about 25 cm2 and the stack assembly has a thickness that is between about 0.1 mm to about 25 mm.

Abstract: A mass spectrometer and method capable of optimizing the opening time of a collision cell includes: an ion source (10) for ionizing a sample; a first mass analyzer (30) for selecting first desired ions from the ions generated in the ion source (10); a collision cell (40) for fragmenting some or all of the first desired ions into product ions; a second mass analyzer (50) for selecting second desired ions from the first desired ions and the product ions; a detector (60) for detecting the second desired ions; and a control section (200) for controlling the collision cell (40) in such a way that the cell performs a storing operation for storing the first desired ions and the product ions for a given storage time and then performs an opening operation for ejecting the stored ions for a given opening time based on information about settings in an adjustment mode.

Abstract: A base assembly for a flash lamp is disclosed. The base assembly has an integrated sparker and includes an electrically conductive header having a surface that defines a boundary of a flash chamber for the flash lamp. There is an opening in the surface of the electrically conductive header and an electrically conductive lead within the opening. The electrically conductive lead is electrically insulated from surrounding portions of the electrically conductive header. A distal end of the electrically conductive lead is substantially flush with the surface of the electrically conductive header.

Abstract: Disclosed is a fluorine-containing resin film which is formed from a fluorine-containing resin composition and has a thickness of 10 to 50 ?m, wherein the fluorine-containing resin composition is prepared by adding 10 to 30 parts by mass of titanium oxide or a composite-oxide-type inorganic pigment to 100 parts by mass of a resin component comprising 60 to 95 parts by mass of a vinylidene fluoride resin and 5 to 40 parts by mass of a methacrylic acid ester resin, and wherein the peak intensity ratio of a II-type crystal, which is expressed by (A)/((A)+(B))×100 wherein A represents the peak height at 840 cm?1 and B represents the peak height at 765 cm?1 in a measurement chart produced by an infrared absorption spectrum, is 60% or more and the total crystallinity is 30% or more as calculated from an X-ray diffraction profile.

Abstract: Exemplary embodiments of the present invention provide a substrate recycling method and a recycled substrate. The method includes separating a substrate having a first surface from an epitaxial layer, performing a first etching of the first surface using electrochemical etching, and performing, after the first etching, a second etching of the first surface using chemical etching, dry etching, or performing, after the first etching, chemical mechanical polishing of the first surface.

Abstract: Methods are provided for cleaning metal regions overlying semiconductor substrates. A method for removing material from a metal region comprises heating the metal region, forming a plasma from a gas comprising hydrogen and carbon dioxide, and exposing the metal region to the plasma.

Abstract: A method of operating vertical heat treatment apparatus includes: cleaning interior of vertical reaction chamber by supplying cleaning gas; pre-coating the interior of the reaction chamber by performing, a plurality of times, a cycle including alternately supplying the first gas and supplying the second gas while generating plasma from the second gas; eliminating charges by loading substrate holding unit holding a dummy semiconductor substrate or a conductive substrate into the reaction chamber and supplying the second gas while generating plasma from the second gas without supplying the first gas; loading the substrate holding unit holding a plurality of product semiconductor substrates into the reaction chamber; and forming thin film in the reaction chamber by performing, a plurality of times, a cycle including alternately supplying the first gas and supplying the second gas while generating plasma from the second gas.

Abstract: A plasma processing apparatus comprises a processing chamber in which a plurality of substrates are stacked and accommodated; a pair of electrodes extending in the stacking direction of the plurality of substrates, which are disposed at one side of the plurality of substrates in said processing chamber, and to which high frequency electricity is applied; and a gas supply member which supplies processing gas into a space between the pair of electrodes.

Abstract: The embodiments herein relate to methods and apparatus for depositing an encapsulation layer over memory stacks in MRAM and PCRAM applications. The encapsulation layer is a titanium dioxide (TiO2) layer deposited through an atomic layer deposition reaction. In some embodiments, the encapsulation layer may be deposited as a bilayer, with an electrically favorable layer formed atop a protective layer. In certain implementations, gaps between neighboring memory stacks may be filled with titanium oxide, for example through an atomic layer deposition reaction or a chemical vapor deposition reaction.

Abstract: A surface of a semiconductor-containing dielectric material/oxynitride/nitride is treated with a basic solution in order to provide hydroxyl group termination of the surface. A dielectric metal oxide is subsequently deposited by atomic layer deposition. The hydroxyl group termination provides a uniform surface condition that facilitates nucleation and deposition of the dielectric metal oxide, and reduces interfacial defects between the oxide and the dielectric metal oxide. Further, treatment with the basic solution removes more oxide from a surface of a silicon germanium alloy with a greater atomic concentration of germanium, thereby reducing a differential in the total thickness of the combination of the oxide and the dielectric metal oxide across surfaces with different germanium concentrations.

Abstract: Embodiments described herein relate to a structure for III-V devices on silicon. A Group IV substrate is provided and a III-V structure may be formed thereon. The III-V structure generally comprises one or more buffer layers and a channel layer disposed on the one or more buffer layers. The one or more buffer layers may be selected to provide optimal microelectronic device properties, such as minimal defects, reduced charge accumulation, and reduced current leakage.

Abstract: A method of forming a free-standing silicon film that includes providing a Si substrate, depositing a layered structure on the Si substrate, where the layered structure includes a Si device layer and a SiGe sacrificial layer, and removing the SiGe sacrificial layer with a spin etch process, where the Si device layer is released from the layered structure.

Abstract: The present invention relates to a method for manufacturing an epitactic silicon layer made up of crystallites with a size no lower than 20 ?m, including: providing a layer of crystallized silicon the surface of which, being inhomogeneous in terms of the size of the crystallites, is made up of large crystallites with a size no lower than 20 ?m, and small crystallites of a smaller size; forming, on the surface of the inhomogeneous silicon layer, a layer of at least one non-nucleating material for the silicon, the thickness of which is adjusted such to cover the entire outer surface of the small crystallites, while leaving all or part of the outer surface of the large crystallites accessible; and carrying out epitaxial growth of a silicon layer on the surface of the assembly obtained at the end of step, under conditions that are suitable for forming the expected epitactic layer.

Abstract: In this disclosure, a mark segmentation method and a method for manufacturing a semiconductor structure applying the same are provided. The mark segmentation method comprises the following steps. First, a plurality of segments having a width WS and separated from each other by a space SS formed on a substrate are identified by a processor. Thereafter, a plurality of marks are set over the segments by the processor. This step comprises: (1) adjusting a width WM of each one of the marks being equal to m(WS+SS)+WS or m(WS+SS)+SS by the processor, wherein m is an integer; and (2) adjusting a space SM of adjacent two of the marks by the processor such that WM+SM=n(WS+SS), wherein n is an integer.

Abstract: A method for treating a surface of a diamond thin film according to one aspect of the present invention performs one of a first substitution process for substituting part of hydrogen-terminals of a diamond thin film with fluorine-terminals in the absence of a fluorocarbon deposition on the surface of diamond thin film and a second substitution process for substituting part of hydrogen-terminals of a diamond thin film with fluorine-terminals in the presence of the fluorocarbon deposition on the surface of diamond thin film based on required surface properties of the diamond thin film.

Abstract: Methods for semiconductor fabrication include forming a well in a semiconductor substrate. A pocket is formed within the well, the pocket having an opposite doping polarity as the well to provide a p-n junction between the well and the pocket. Defects are created at the p-n junction such that a leakage resistance of the p-n junction is decreased.

Abstract: A semiconductor device and a fabricating method thereof are provided. The semiconductor device is formed on a substrate and includes a first first-type metal-oxide-semiconductor field effect transistor (MOSFET) and a second first-type MOSFET. The first first-type MOSFET includes a first gate structure, a first source area and a first drain area on the substrate. The second first-type MOSFET includes a second gate structure, a second source area, and a second drain area on the substrate. A first pocket implant process is applied to the first first-type MOSFET via a first photomask, while a second pocket implant process is applied to the second first-type MOSFET via a second photomask. The first and second gate structures are facing different directions.

Abstract: A method to implant dopants onto fin-type field-effect-transistor (FINFET) fin surfaces with uniform concentration and depth levels of the dopants and the resulting device are disclosed. Embodiments include a method for pulsing a dopant perpendicular to an upper surface of a substrate, forming an implantation beam pulse; applying an electric or a magnetic field to the implantation beam pulse to effectuate a curvilinear trajectory path of the implantation beam pulse; and implanting the dopant onto a sidewall surface of a target FINFET fin on the upper surface of the substrate via the curvilinear trajectory path of the implantation beam pulse.

Abstract: Disclosed is a method for manufacturing a semiconductor device, including: forming a first material layer including holes exposing a part of an ion injection target layer on the ion injection target layer; forming gap filling layers having a smaller height than that of the holes inside the holes; forming a second material layer on the gap filling layers and the first material layer; forming ion injection mask patterns exposing the gap filling layer by removing the second material layer formed on the gap filling layer in the second material layer; exposing a part of the ion injection target layer through inner portions of the holes by removing the exposed gap filling layer; and performing an ion injection process on the exposed ion injection target layer.

Abstract: Apparatus and methods of treating a substrate with an amorphous semiconductor layer, or a semiconductor layer having small crystals, to form large crystals in the substrate are described. A treatment area of the substrate is identified and melted using a progressive melting process of delivering pulsed energy to the treatment area. The treatment area is then recrystallized using a progressive crystallization process of delivering pulsed energy to the area. The pulsed energy delivered during the progressive crystallization process is selected to convert the small crystals into large crystals as the melted material freezes.

Abstract: An apparatus and method for performing ion implantation while minimizing and/or repairing amorphization of the substrate material. The process comprises exposing a substrate to an ion beam and either concurrently or promptly following the ion implantation using a laser to anneal the surface. In addition, a laser may be utilized to preheat the substrate prior to ion implantation. The laser heats the substrate to a temperature that does not cause the resist layer to be damaged. By utilizing a laser to heat the substrate from the top surface the resist is not damaged allowing for the use of photo resist material.

Abstract: A semiconductor device includes a substrate including an active region defined by a device isolation pattern and a floating gate on the active region. The floating gate includes an upper portion, a lower portion having a width greater than a width of the upper portion, and a step-difference portion between the upper portion and the lower portion. A dielectric pattern is on the floating gate, and a control gate is on the dielectric pattern. The lower portion of the floating gate has a height of about 4 nm or more.

Abstract: An electronic device includes a substrate with a semiconducting surface having a plurality of fin-type projections coextending in a first direction through a memory cell region and select gate regions. The electronic device further includes a dielectric isolation material disposed in spaces between the projections. In the electronic device, the dielectric isolation material in the memory cell regions have a height less than a height of the projections in the memory cell regions, and the dielectric isolation material in the select gate regions have a height greater than or equal to than a height of the projections in the select gate regions. The electronic device further includes gate features disposed on the substrate within the memory cell region and the select gate regions over the projections and the dielectric isolation material, where the gate features coextend in a second direction transverse to the first direction.

Abstract: The invention provides a novel conductive film and a multilayered conductive structure, comprising a plurality of metal nanowires arranged in clusters and having an average aspect ratio of least 100,000, optionally decorated by metal nanoparticles. It is also disclosed a process for preparation of a conductive film comprising metal nanowires by surfactant/template assisted method which involves the use of a precursor solution based on surfactant (such as CTAB), metal precursor (such as HAuC14 and AgN03) and reducing agent (such as metal borohydride or sodium ascorbate).