Abstract: This electrical switching apparatus includes a protection casing, at least one switching member suitable for switching between a first position permitting the passage of a current and a second position preventing the passage of the current, a mechanism for control of the or of each switching member, and at least one auxiliary module disposed in the casing, the auxiliary module being removable with respect to the casing and configured to implement a function associated with the control mechanism. The electrical switching apparatus includes a mechanical referencing member common to the control mechanism and to each auxiliary module, for the positioning of the control mechanism and of each auxiliary module in the casing.

Abstract: Exemplary embodiments of the present invention are directed to a circuit protection device, A circuit protection device may comprise a housing defining a cavity and a metal oxide varistor (MOV) disposed within the cavity. The circuit protection device may further comprise a first terminal electrically attached at a first end to the MOV by solder and extending outside of the housing at a second end. An arc shield is disposed within the housing between the first end of the first terminal and at least partially over the solder. The circuit protection device may further comprise a spring configured to bias the arc shield against a micro switch having an indicator portion disposed at least partially outside of the housing.

Abstract: A fuse protector with a plurality of fuses comprises a fuse protector base, a fuse carrier), and fuse elements. The fuse elements are disposed on the fuse carrier, and the fuse carrier is inserted in the fuse protector base. One side of the fuse protector base is provided with at least two wiring assemblies, and the other side of the fuse protector base is provided with at least two wiring assemblies. The fuse protector base is further provided with base contacts corresponding to the wiring assemblies. The fuse carrier is inserted into the fuse protector base. When the fuse carrier is pulled out of the fuse protector base, at least four breaking points are formed at the same time, and the voltage of an arc is distributed to the four contact points. Therefore, the voltage of the arc is effectively reduced, space is saved.

Abstract: An interruption apparatus includes a first portion having a trip unit and a second portion having a detection system. The first and second portions are individually selectable based upon the particular application and are then movable from a detached configuration to a connected configuration. The first and second portions are selected from a plurality of first portions and second portions having different specifications. A desired first portion having a first interruption rating and a desired second portion having detection capabilities that are suited to the particular application can be assembled together to provide a field-configurable interruption apparatus.

Abstract: The invention is a unique and substantive improvement in ion source assemblies which is able to produce a ribbon-shaped ion beam having an arbitrarily chosen breadth dimension which is at least ten times greater [and often more than thirty times greater] than its thickness dimension, the breadth and thickness dimensions of the beam being normal (i.e., perpendicular) to the Z-axis direction of travel for the ion beam.

Abstract: An object of the present invention is to provide the X-ray tube which improves the workability of the baking for obtaining the ultra-high vacuum of the X-ray tube having a field emission type electron gun and have a stable performance. The X-ray tube comprises a field emission type electron gun chamber, an electron beam aperture, an X-ray target and a vacuum pump, in one body with a vacuum sealing structure (vacuum tube section). The vacuum tube section is attachable and detachable to the electromagnetic lens section in the X-ray tube, thereby it is possible to perform the baking by removing only the vacuum tube section. The fitting portions for positioning are provided at the vacuum tube section and the electromagnetic lens section, and therefore it is a constitution to easily perform an optical axis alignment at a mounting time after the baking.

Abstract: An ionic liquid ion source can include a microfabricated body including a base and a tip. The body can be formed of a porous material compatible with at least one of an ionic liquid or room-temperature molten salt. The body can have a pore size gradient that decreases from the base of the body to the tip of the body, such that the at least one of an ionic liquid or room-temperature molten salt is capable of being transported through capillarity from the base to the tip.

Abstract: The invention has an object to provide a charged particle beam device in which it is possible to perform proper beam adjustment while suppressing a decrease in MAM time, with a simple configuration without adding a lens, a sensor, or the like.

Abstract: Provided herein are approaches for controlling an ion beam within an accelerator/decelerator. In an exemplary approach, an ion implantation system includes an ion source for generating an ion beam, and a terminal suppression electrode coupled to a terminal, wherein the terminal suppression electrode is configured to conduct the ion beam through an aperture of the terminal suppression electrode and to apply a first potential to the ion beam from a first voltage supply. The system further includes a lens coupled to the terminal and disposed adjacent the terminal suppression electrode, wherein the lens is configured to conduct the ion beam through an aperture of the lens and to apply a second potential to the ion beam from a second voltage supply. In an exemplary approach, the lens is electrically insulated from the terminal suppression electrode and independently driven, thus allowing for an increased beam current operation range.

Abstract: Ion implantation systems and processes are disclosed. An exemplary ion implantation system may include an ion source, an extraction manipulator, a magnetic analyzer, and an electrode assembly. The extraction manipulator may be configured to generate an ion beam by extracting ions from the ion source. A cross-section of the generated ion beam may have a long dimension and a short dimension orthogonal to the long dimension of the ion beam. The magnetic analyzer may be configured to focus the ion beam in an x-direction parallel to the short dimension of the ion beam. The electrode assembly may be configured to accelerate or decelerate the ion beam. One or more entrance electrodes of the electrode assembly may define a first opening and the electrode assembly may be positioned relative to the magnetic analyzer such that the ion beam converges in the x-direction as the ion beam enters through the first opening.

Abstract: In one embodiment, a supporting case includes a lower case member and an upper case member. The mounting substrate is pinched between a lower cylindrical supporting portion and a upper cylindrical supporting portion. Peripheral regions of the mounting substrate that are on a peripheral side with respect to a part pinched between the lower cylindrical supporting portion and the upper cylindrical supporting portion are positioned in a space defined by a bottom plate portion, a lower peripheral-wall portion, and the lower cylindrical supporting portion of the lower case member and a top lid portion, an upper peripheral-wall portion, and the upper cylindrical supporting portion of the upper case member.

Abstract: A plasma processing equipment includes a vacuum processing chamber, an insulating material, a gas inlet, a high frequency induction antenna provided at an upper outside of the vacuum processing chamber, a magnetic field coil, a yoke for controlling distribution of a magnetic field in the vacuum processing chamber, a high frequency power supply for generating plasma and supplying a high frequency current to the antenna, and a power supply for supplying power to the magnetic field coil. The antenna is divided into n high frequency induction antenna elements are arranged in tandem on one circle so that a high frequency current delayed sequentially by ? (wavelength of high frequency power supply)/n flows clockwise through the antenna elements arranged in tandem via a delay unit, and a magnetic field is applied from the magnetic field coil to generate electron cyclotron resonance (ECR) phenomenon.

Abstract: A system provides post-match control of microwaves in a radial waveguide. The system includes the radial waveguide, and a signal generator that provides first and second microwave signals that have a common frequency. The signal generator adjusts a phase offset between the first and second signals in response to a correction signal. The system also includes first and second electronics sets, each of which amplifies a respective one of the first and second microwave signals. The system transmits the amplified, first and second microwave signals into the radial waveguide, and matches an impedance of the amplified microwave signals to an impedance presented by the waveguide. The system also includes at least two monitoring antennas disposed within the waveguide. A signal controller receives analog signals from the monitoring antennas, determines the digital correction signal based at least on the analog signals, and transmits the correction signal to the signal generator.

Abstract: A substrate treatment apparatus may include one or more of a process chamber, a gas supply assembly that may supply one or more gases into the process chamber, a gas exhaust assembly that may exhaust gases from the process chamber, and a gas injector assembly connected to the gas exhaust assembly independently of the process chamber. The gas injector assembly may supply a control gas into the gas exhaust assembly. The apparatus may include a gas injection control device configured to adjustably control the supply of control gas. The gas inject control device may measure an internal pressure of the process chamber and control the supply of control gas based on the internal pressure. The apparatus may include a diffuser that couples the gas injector assembly to the gas exhaust assembly and is configured to diffuse the control gas supplied from the gas injector assembly into the gas exhaust assembly.

Abstract: An apparatus for providing processing gases to a process chamber with improved uniformity is disclosed. One embodiment provides a gas delivery assembly. The gas delivery assembly includes a hub, a nozzle, and one or more gas diffusers disposed in the nozzle. The nozzle has a cylindrical body with a side wall and a top surface. A plurality of injection passages are formed inside the nozzle to deliver processing gases into the process chamber via a plurality of outlets disposed in the side wall. The injection passages are configured to direct process gases out of each outlet disposed in the side wall in a direction which is not radially aligned with a centerline of the hub.

Abstract: A bulk, sintered solid solution-comprising ceramic article useful in semiconductor processing, which is resistant to erosion by halogen-containing plasmas and provides advantageous mechanical properties. The solid solution-comprising ceramic article is formed from a combination of yttrium oxide and zirconium oxide. The bulk, sintered solid solution-comprising article is formed from zirconium oxide at a molar concentration ranging from about 96 mole % to about 94 mole %, and yttrium oxide at a molar concentration ranging from about 4 mole % to about 6 mole %.

Abstract: Provided are a system and a method for treating a substrate. The substrate treating system may include a process chamber including a body with an open top and a dielectric window hermetically sealing the top of the body from an outside, a supporting unit provided in the process chamber to support a substrate, a gas-supplying unit supplying a process gas into the process chamber, a plasma source provided outside the process chamber to generate plasma from the process gas supplied into the process chamber, and a heating unit heating the dielectric window. The heating unit may include a heater and a thermally conductive layer provided on one of surfaces of the dielectric window.

Abstract: The inventive concepts provide a substrate treating apparatus. The substrate treating apparatus includes a process chamber in which a treatment space is provided, a support unit supporting a substrate in the process chamber, a gas supply unit supplying a gas into the process chamber, and a plasma source generating plasma from the gas. The support unit includes a support plate on which a substrate is loaded, a focus ring disposed to surround the support plate, an electric field adjusting ring disposed under the focus ring, and an actuator vertically moving the electric field adjusting ring.

Abstract: A connection control method in a substrate processing apparatus is provided. The substrate processing apparatus comprises: a depressurized processing room; a susceptor that is provided in the processing room and configured to mount a wafer thereon; a HF high frequency power supply configured to apply a high frequency voltage for plasma generation to the susceptor; a LF high frequency power supply configured to apply a high frequency voltage for a bias voltage generation to the susceptor; and a DC voltage applying unit configured to apply a DC voltage of a rectangle-shaped wave to the susceptor, capable of improving a processing controllability in an etching process. The connection control method comprises controlling connection or disconnection between the susceptor and the LF high frequency power supply and connection or disconnection between the susceptor and the DC voltage applying unit when plasma is generated in the processing room.

Abstract: A plasma processing apparatus according to an embodiment includes a processing container, a mounting table, a plurality of heaters, and a power supply device. The mounting table is provided in the processing container. The plurality of heaters are provided in the mounting table. The power supply device supplies electric power to the plurality of heaters. The power supply device includes a plurality of transformers and a plurality of zero-cross control type solid state relays (SSRs). The plurality of transformers are configured to step down a voltage from an alternating-current power source. Each of the plurality of transformers includes a primary coil and a secondary coil. The primary coil is connected to the alternating-current power source. Each of the plurality of SSRs is provided between one corresponding heater among the plurality of heaters and the secondary coil of one corresponding transformer among the plurality of transformers.

Abstract: A baseplate for a temperature controlled substrate support assembly in a vacuum chamber includes a single cavity in an upper surface of the base plate. A cylindrical wall extends upward around an outer perimeter of the base plate to define the cavity. A cover plate arranged on the base plate above the cavity is in thermal contact with the cylindrical wall of the base plate. A plurality of thermoelectric modules is arranged within the cavity in the upper surface of the base plate in thermal contact with the cover plate and the base plate and is sealed from the vacuum chamber and maintained at atmospheric pressure. A plurality of fluid channels is arranged within the base plate below the cavity. A plurality of heat transfer pipes extends downward toward the fluid channels from an upper surface of the base plate within the cavity.

Abstract: A sputtering apparatus includes a chamber, a target section disposed in the chamber, and a stage facing the target section. The target section includes a first target having a first diameter and a second target having a second diameter different from the first diameter. The first target and the second target each extend in a longitudinal direction and have a cylindrical shape, and the first and second diameters are respectively measured along a cross-section of corresponding first and second targets taken along a direction perpendicular to the longitudinal direction.

Abstract: Systems and methods for growing hexagonal crystal structure piezoelectric material with a c-axis that is tilted (e.g., 25 to 50 degrees) relative to normal of a face of a substrate are provided. A deposition system includes a linear sputtering apparatus, a translatable multi-aperture collimator, and a translatable substrate table arranged to hold multiple substrates, with the substrate table and/or the collimator being electrically biased to a nonzero potential. An enclosure includes first and second deposition stations each including a linear sputtering apparatus, a collimator, and a deposition aperture.

Abstract: A sputtering apparatus includes a process chamber in which a sputtering process is performed, a substrate holder provided in the process chamber and fixing a horizontal position of a substrate during the sputtering process, and a first sputter gun provided to be vertically spaced apart from the substrate in the process chamber. The first sputter gun is spaced apart from the substrate by a first horizontal distance during the sputtering process. The first sputter gun is fixed during the sputtering process. The first horizontal distance is a horizontal distance between the substrate and the first sputter gun when viewed from a plan view.

Abstract: The invention relates to mass spectrometric analyses of heavy molecules and molecular complexes having molecular weights sometimes well above 100,000 daltons, by collision treatment in linear RF multipole collision cells. A mixture of at least one light collision gas (<40 daltons) and at least one heavy collision gas (>80 daltons) is provided in a linear RF collision cell. The heavy collision gas results in high-momentum and high-energy collisions, which leads to splitting and further fragmentation of portions of the heavy molecular (complex) ions. For this purpose, the molecular (complex) ions are axially injected into the collision cell at kinetic energies of several hundred electronvolts per charge; due to the collisions with the heavy collision gas molecules they are deflected from the axis and excited to undergo strong oscillations in the radial direction in the focusing RF field. The light collision gas serves in turn for damping these oscillations.

Abstract: A method of analysing ions is disclosed comprising performing an initial multi-dimensional survey scan comprising separating parent ions according to a first physico-chemical property and separating the parent ions according to a second physico-chemical property. At least one parent ion of interest from the initial multi-dimensional survey scan is determined, the at least one parent ion of interest having a first value or range of the first physico-chemical property and a second value or range of the second physico-chemical property. Then, during a subsequent single cycle of separation, the method further comprises separating parent ions according to the first physico-chemical property.

Abstract: A method of mass spectrometry is disclosed that comprises transforming mass spectral data to produce frequency-domain mass spectral data, modifying the frequency-domain mass spectral data to produce modified frequency-domain mass spectral data by attenuating and/or removing one or more ranges of the frequency-domain mass spectral data that relate to noise associated with peaks of interest in the mass spectral data, and transforming the modified frequency-domain mass spectral data to produce modified mass spectral data.

Abstract: A device for mass spectrometry comprises an ionization source, a mass analyzer fluidly coupled to the ionization source and an electronic data acquisition system for processing signals provided by the mass analyzer. The electronic data acquisition system comprises at least one analog-to-digital converter (10) producing digitized data from the signals obtained from the mass analyzer and a fast processing unit (47) receiving the digitized data from said analog-to-digital converter (10). The fast processing (47) unit is programmed to continuously, in real time inspect the digitized data for events of interest measured by the mass spectrometer; and the electronic data acquisition system is programmed to forward (23) the digitized data representing mass spectra relating to events of interest for further analysis and to reject the digitized data representing mass spectra not relating to events of interest.

Abstract: A sample plate in use with a MALDI-TOF (matrix-assisted laser desorption ionization time-of-flight) mass spectrometer. The sample plate is usable for the mass spectrometry of a polymeric material on the order of several hundreds of Da and a method of manufacturing the same sample plate. The sample plate including a target plate, an organic matrix formed on one surface of the target plate, and a Parylene thin film formed on the target plate on which the organic matrix is formed, the Parylene thin film entirely covering the organic matrix.

Abstract: Methods, systems and devices that provide fluid devices with at least one SPE bed adjacent (upstream of) a separation channel which may be in communication with an inlet of a Mass Spectrometer. The fluid device can be configured to operate using independently applied pressures to a BGE reservoir and a sample reservoir for pressure-driven injection that can inject a discrete sample plug into a separation channel that does not require voltage applied to the sample reservoir and can allow for in-channel focusing methods to be used. The methods, systems and devices are particularly suitable for use with a mass spectrometer but optical or other electronic detectors may also be used with the fluidic devices.

Abstract: Systems and methods for ionization of a sample and mass separation of the ions by a mass spectrometer are disclosed herein.

Abstract: Certain embodiments described herein are directed to induction devices comprising an oxidation resistant material. In certain examples, the induction device comprises a coil of wire that is produced from the oxidation resistant material. In some examples, the oxidation resistant induction device can be used to sustain an inductively coupled plasma in a torch.

Abstract: A mass spectrometer is disclosed comprising a gas chromatography separation device, an atmospheric pressure ionisation ion source and a control system arranged and adapted: (i) to operate the atmospheric pressure ionisation ion source at one or more first settings for a first period of time whilst one or more solvents elute from the gas chromatography separation device during a solvent front; and then (ii) to operate the atmospheric pressure ionisation ion source at one or more second different settings for a second subsequent period of time whilst one or more analytes elute from the gas chromatography separation device.

Abstract: A novel method and mass spectrometer apparatus is introduced to enable collision induced dissociation inside linear ion traps/guides or 3D ion traps based on digital waveform manipulation. In particular, using the device's digitally produced trapping waveforms to trap, isolate and energize the ions of interest creates a simplified and versatile ion trap/guide that is capable tandem mass spectrometry and high sensitivity. Coupling the digitally operated ion trap/guides to a TOF creates a Q-TOF instrument that outperforms any commercial system in terms of sensitivity and capabilities.

Abstract: An apparatus includes a vacuum chamber, a wafer transfer mechanism, a first gas source, a second gas source and a reuse gas pipe. The vacuum chamber is divided into at least three reaction regions including a first reaction region, a second reaction region and a third reaction region. The wafer transfer mechanism is structured to transfer a wafer from the first reaction region to the third reaction region via the second reaction region. The first gas source supplies a first gas to the first reaction region via a first gas pipe, and a second gas source supplies a second gas to the second reaction region via a second gas pipe. The reuse gas pipe is connected between the first reaction region and the third reaction region for supplying an unused first gas collected in the first reaction region to the third reaction region.

Abstract: A method for depositing a thin film onto a substrate is disclosed. In particular, the method forms a transitional metal silicate onto the substrate. The transitional metal silicate may comprise a lanthanum silicate or yttrium silicate, for example. The transitional metal silicate indicates reliability as well as good electrical characteristics for use in a gate dielectric material.

Abstract: A method of processing an engineered substrate structure includes providing an engineered substrate structure including a polycrystalline substrate and an engineered layer encapsulating the polycrystalline substrate, forming a sacrificial layer coupled to the engineered layer, joining a solid state device structure to the sacrificial layer, forming one or more channels in the solid state device structure by removing one or more portions of the solid state device structure to expose one or more portions of the sacrificial layer, flowing an etching chemical through the one or more channels to the one or more exposed portions of the sacrificial layer, and dissolving the sacrificial layer by interaction between the etching chemical and the sacrificial layer, thereby separating the engineered substrate structure from the solid state device structure.

Abstract: An apparatus of processing a semiconductor substrate include a chuck, a holder, a liquid supplying system and a positive pressure unit. The chuck has a principal surface and at least a hole formed thereon. The holder is capable of holding a semiconductor substrate at a position above the principal surface. The liquid supplying system is configured to provide a liquid film onto the principal surface through the hole. The positive pressure unit is configured for providing a gas flow to a space over the chuck. A method of processing a semiconductor substrate is disclosed herein as well.

Abstract: A method of cleaning a substrate includes providing the substrate, the substrate including a metal material film, performing physical cleaning of the substrate, performing chemical cleaning of the substrate, and drying a surface of the substrate. Performing the chemical cleaning includes supplying a chemical cleaning solution including an anionic surfactant at a concentration that is equal to or greater than a critical micelle concentration (CMC) onto the surface of the substrate.

Abstract: A brush-cleaning apparatus is disclosed for use in cleaning a semiconductor wafer after polishing. Embodiments of the brush-cleaning apparatus implemented with a multi-branch chemical dispensing unit are applied beneficially to clean semiconductor wafers, post-polish, using a hybrid cleaning method. An exemplary hybrid cleaning method employs a two-chemical sequence in which first and second chemical treatment modules are separate from one another, and are followed by a pH-neutralizing—rinse that occurs in a treatment module separate from the first and second chemical treatment modules. Implementation of such hybrid methods is facilitated by the multi-branch chemical dispensing unit, which provides separate chemical lines to different chemical treatment modules, and dispenses chemical to at least four different areas of each wafer during single-wafer processing in an upright orientation.

Abstract: A method for manufacturing a semiconductor device includes forming a transistor on a substrate. Precursor gases are provided from a showerhead of a chemical vapor deposition (CVD) apparatus to form a contact etch stop layer (CESL) to cover the transistor and the substrate. A temperature of the showerhead is controlled in a range of about 70° C. to about 100° C. to control a temperature of the precursor gases.

Abstract: Disclosed is a method of forming a semiconductor device using a self-assembly (DSA) patterning process. The method includes forming a patterned feature over a substrate; applying an orientation material that includes a first polymer and a second polymer over the substrate, wherein the first polymer has a first activation energy and the second polymer has a second activation energy; baking the substrate at first temperature thereby forming a first orientation layer that includes the first polymer; baking the substrate at second temperature thereby forming a second orientation layer that includes the second polymer; and performing a directed self-assembly (DSA) process over the first and the second orientation layers.

Abstract: A method including: providing a structure comprising: a spalled layer having a first side and a second side; and a tape layer provided on the first side of the spalled layer, wherein the tape layer is provided at below a first temperature range; applying a temporary substrate layer to the second side of the spalled layer, wherein the temporary substrate layer is applied at a second temperature range, and wherein at least a portion of the second temperature range is lower than the first temperature range; and after applying the temporary substrate layer, separating the tape layer from the spalled layer.

Abstract: Embodiments described herein generally relate to doping of three dimensional (3D) structures on a substrate. In one embodiment, a conformal dopant containing film may be deposited over the 3D structures. Suitable dopants that may be incorporated in the film may include boron, phosphorous, and other suitable dopants. The film may be subsequently annealed to diffuse the dopants into the 3D structures.

Abstract: A method for forming a semiconductor device includes implanting doping ions into a semiconductor substrate. A deviation between a main direction of a doping ion beam implanting the doping ions and a main crystal direction of the semiconductor substrate is less than ±0.5° during the implanting of the doping ions into the semiconductor substrate. The method further includes controlling a temperature of the semiconductor substrate during the implantation of the doping ions so that the temperature of the semiconductor substrate is within a target temperature range for more than 70% of an implant process time used for implanting the doping ions. The target temperature range reaches from a lower target temperature limit to an upper target temperature limit. The lower target temperature limit is equal to a target temperature minus 30° C., and the target temperature is higher than 80° C.

Abstract: A method of forming a patterned metal film layer and preparation methods of a transistor and an array substrate are disclosed, in the technical field of displays. The method of forming a patterned metal film layer of the invention comprises: sequentially depositing a sacrificial layer and a photoresist layer on a substrate, and forming a patterned sacrificial layer and a patterned photoresist layer overlying on the patterned sacrificial layer by exposure, development, and etching, wherein a side wall of the patterned sacrificial layer adjacent to a patterned metal film layer to be formed forms a chamfer; depositing a metal film layer on the substrate after finishing the above step, and removing the patterned photoresist layer and the sacrificial layer to form a patterned metal film layer.

Abstract: A method and structure for providing a pre-deposition treatment (e.g., of a work-function layer) to accomplish work function tuning. In various embodiments, a gate dielectric layer is formed over a substrate, and a work-function metal layer is deposited over the gate dielectric layer. In some embodiments, a first in-situ process including a pre-treatment process of the work-function metal layer is performed. By way of example, the pre-treatment process removes an oxidized layer of the work-function metal layer to form a treated work-function metal layer. In some embodiments, after performing the first in-situ process, a second in-situ process including a deposition process of another metal layer over the treated work-function metal layer is performed.

Abstract: Provided is a method of fabricating a semiconductor device. In the method, a double patterning technology is used to form various patterns with different widths.

Abstract: According to one embodiment, a semiconductor manufacturing apparatus includes a chamber, a stage, and first gas injector. The chamber is configured to contain a wafer. The stage is configured to hold the wafer in the chamber. The first gas injector is set at N (N is an integer of 2 or more) injection angles with respect to a vertical axis relative to a wafer surface, and is capable of injecting a gas of one and the same kind from the side portion to the center of the wafer at the N injection angles.

Abstract: Methods for fabricating semiconductor devices include forming a fin-type pattern protruding on a substrate, forming a gate electrode intersecting the fin-type pattern, forming a first recess adjacent to the gate electrode and within the fin-type pattern by using dry etching, forming a second recess by treating a surface of the first recess with a surface treatment process including a deposit process and an etch process, and forming an epitaxial pattern in the second recess.