Abstract: An on-load tap changer has: a first selector rod and a second selector rod; a load changeover-switch rod; a switch; and a transmission. The first selector rod, the second selector rod and the load changeover-switch rod are arranged collinearly. The transmission is configured to: move the first selector rod and the second selector rod during changeover from one selector contact to an adjacent selector contact in a first direction; and move the load changeover-switch rod during the changeover in the first direction and a second direction, which is opposite to the first direction, so as to actuate the switch.

Abstract: A keyboard device includes a substrate, a keycap on the substrate, a first link member connected between the substrate and the keycap and is adjacent to the first side portion of the keycap, and a second link member connected between the substrate and the keycap and is adjacent to the second side portion of the keycap. The two first short swing arms of the first link member are respectively connected to two ends of the first pivot arm of the first link member. A length of each first short swing arm is less than half of a length of the first pivot arm. The two second short swing arms of the second link member are respectively connected to two ends of the second pivot arm of the second link member. A length of each second short swing arm is less than half of a length of the second pivot arm.

Abstract: A rolling-ball tilt switch includes a conductive housing having an inner surface that surrounds a longitudinal axis and that defines a roller cavity, an insulating seat inserted into the roller cavity, a conductive terminal having a protruding section extending through the insulating seat into the roller cavity, and a conductive rolling-ball disposed in the roller cavity and movable between a conducting position and a non-conducting position. The longitudinal axis and an extension of a surface portion of the inner surface of the conductive housing cooperatively define an angle ranging from 5 to 55 degrees.

Abstract: A rotational over travel protection device for preventing over rotation of at least one of a cable, or a component operable with the rotational over travel protection device is provided. The device includes a housing, a rotatable shaft connected to the housing that can rotate relative to the house, and a triggering device supported in the housing and rotatable with the rotatable shaft. The device also includes a first and second rotational limit switch disposed in the housing. The switches are operable to be activated by the triggering device to arrest rotation of the rotatable shaft upon relative rotation of the rotatable shaft and the housing either a first or second rotation direction, respectively, at least 180 degrees from a zero position.

Abstract: A switch includes magnet for biasing a contact arm into a close position, the contact arm forced into an open position when an actuating force is applied to an extending portion of the arm. The switch can be operatively coupled to a zipper system of a container such that a zipper slider, when moved to a closed position of the zipper system, contact the extending portion of the arm to provide the actuating force. A circuit is formed by electrically connecting the switch to a battery and light source. The light source illuminates the interior of the container when the zipper slider is moved from a closed zipper system position.

Abstract: A switching device comprising first and second body parts and a first operating device for moving the body parts into a closed state. A piezoelectric actuator is coupled to each body part and is operable to move the body parts part away from one another. The switching device may be incorporated into an actuator for operating the vacuum interrupter of a vacuum circuit breaker.

Abstract: A guiding pull ring member for guiding a unit top contact in a switch assembly into a mounting contact. The guide ring member includes a mounting ring defined in a first plane, a grasping ring coupled to one side of the mounting ring and being defined in a second plane perpendicular to the first plane, and a V-shaped guide piece coupled to the mounting ring at a side opposite from the grasping ring and extending perpendicular to the first plane. The guiding pull ring member has particular application for a solenoid operated vacuum interrupter recloser switch mounted to a utility pole.

Abstract: Disclosed embodiments relate to an electrically controlled switch for high current switching operations and with different configurations of fixed terminal contacts that includes a switch body, a couple of moving contacts, a guide that drives the couple of moving contacts up to an abutting position, a housing groove running perimetric in the switch body, and at least one contact bar for connecting each of the moving contact to a respective fixed terminal contact of the switch, wherein the contact bar is hosted within the housing groove and has a free end projecting from the switch body to form the fixed terminal contact through a corresponding aperture of the switch body located on a same lateral side or on opposite lateral sides, or on the base support, respectively.

Abstract: A closing spring assembly for an electrical switching device is provided. The closing spring assembly is configured to exert a closing force on a moving contact of the switching device. The closing force helps to maintain physical and electrical contact between the moving contact and an associated stationary contact, so that the moving and stationary contacts form a path for conducing electric current through the switching device. The closing spring assembly is configured so that the closing force remains constant or decreases as the moving contact is driven away from the stationary contact during switching of the current path away from the moving and stationary contacts.

Abstract: An electromagnetic actuator has: an armature carrying at least one coil; a ferromagnetic yoke configured to channel a magnetic flux created by the coil; and a ferromagnetic moving part that interacts with the yoke to form a magnetic circuit formed at least in part by an assembly of laminated metal plates, the moving part being configured to move in relation to the armature under the action of the magnetic field generated by the coil. The actuator moreover has an auxiliary magnetic circuit made of electrically conductive material, in order to permit the flow of currents induced in the auxiliary magnetic circuit when a magnetic field is generated by the coil.

Abstract: A switching assembly is for an electrical switching apparatus of a switching system. The electrical switching apparatus includes a base. The switching system has a communication device. The switching assembly includes a number of contact assemblies coupled to the base, each of the contact assemblies having a stationary contact and a movable contact structured to move between a CLOSED position corresponding to engagement with the stationary contact, and an OPEN position corresponding to disengagement with the stationary contact; and a transfer assembly including an element and only one single actuator coupled to the element, the element being structured to be coupled to the base, the single actuator comprising a controller for receiving a signal from the communication device. The single actuator is structured to move the movable contact of each of the number of contact assemblies between the CLOSED position and the OPEN position.

Abstract: A thermal fuse may comprise an electrode and a conductor separated by a phase change material. The electrode may be formed from a conductive material that generates hydrogen when exposed to water or hydrogen peroxide. The phase change material may release water or hydrogen peroxide at or above an activation temperature.

Abstract: A fuse including a fuse body having a main body portion formed of a dielectric material, a plurality of arc chambers formed in the main body portion, the arc chambers arranged in a matrix configuration, a conductor extending through the main body portion and intersecting the arc chambers, the conductor having bridge portions disposed within the arc chambers, the bridge portions being mechanically weaker than other portions of the conductor and configured to melt and separate upon the occurrence of an overcurrent condition in the fuse.

Abstract: An ion source including a chamber housing defining an ion source chamber and including an extraction plate on a front side thereof, the extraction plate having an extraction aperture formed therein, and a tubular cathode disposed within the ion source chamber and having an opening formed in a front half thereof nearest the extraction aperture, wherein a rear half of the tubular cathode furthest from the extraction aperture is closed.

Abstract: A method of detecting a defect in a device using a charged particle beam includes inputting a charged particle beam condition, a light condition, and electronic device circuit information, controlling a charged particle beam applied to a sample based on the electron beam condition, controlling light applied to the sample based on the light condition, detecting second electrons emitted from the sample by the application of the charged particle beam and the light, and generating a calculation netlist based on the electronic device circuit information, generating a light irradiation netlist based on the calculation netlist and the light condition, estimating a first irradiation result when the charged particle beam and the light are applied to the sample based on the light irradiation netlist and the charged particle beam condition, and comparing the first irradiation result with a second irradiation result when the charged particle beam and the light are actually applied to the sample based on the electron beam

Abstract: Provided is a charged particle beam system capable of reducing the force applied to a sample when a chuck device grips the sample. The charged particle beam system is typified by an electron microscope including a sample chamber, a sample exchange chamber connected to the sample chamber, a sample container capable of being removably attached in the sample exchange chamber, and a transport device for transporting the sample between the sample container and the sample exchange chamber. The transport device includes the chuck device for gripping the sample, a drive mechanism for moving the chuck device in a given direction, a mechanical driver for actuating the chuck device, and a power transmission mechanism for transmitting power of the mechanical driver to the chuck device. The power transmission mechanism includes a shaft and a resilient member that elastically deforms when a force in the given direction is applied to the shaft.

Abstract: In one embodiment, an impedance matching network includes a variable reactance circuit providing a variable capacitance or inductance. The variable reactance circuit includes reactance components and corresponding switching circuits. Each of the switching circuits includes a diode and a driver circuit to switch the diode. The driver circuit includes first and second switches coupled in series. A first driver is coupled to the first switch, a second driver is coupled to the second switch, and a third driver is coupled to the first and second drivers. The third driver provides a first signal to the first driver, and a second signal to the second driver. In providing the signals, the third driver increases and decreases a duration of a dead time between (a) driving the first driver on and the second driver off, or (b) driving the second driver on and the first driver off.

Abstract: An apparatus for atomic scale processing is provided. The apparatus may include a reactor (100) and an inductively coupled plasma source (10). The reactor may have inner (154) and outer surfaces (152) such that a portion of the inner surfaces define an internal volume (156) of the reactor. The internal volume of the reactor may contain a fixture assembly (158) to support a substrate (118) wherein the partial pressure of each background impurity within the internal volume may be below 10?6 Torr to reduce the role of said impurities in surface reactions during atomic scale processing.

Abstract: In a plasma processing apparatus of an exemplary embodiment, a radio frequency power source generates radio frequency power for plasma generation. A bias power source periodically applies a pulsed negative direct-current voltage to a lower electrode to draw ions into a substrate support. The radio frequency power source supplies the radio frequency power as one or more pulses in a period in which the pulsed negative direct-current voltage is not applied to the lower electrode. The radio frequency power source stops supply of the radio frequency power in a period in which the pulsed negative direct-current voltage is applied to the lower electrode. Each of the one or more pulses has a power level that gradually increases from a point in time of start thereof to a point in time when a peak thereof appears.

Abstract: Some embodiments include a high voltage, high frequency switching circuit. The switching circuit may include a high voltage switching power supply that produces pulses having a voltage greater than 1 kV and with frequencies greater than 10 kHz and an output. The switching circuit may also include a resistive output stage electrically coupled in parallel with the output and between the output stage and the high voltage switching power supply, the resistive output stage comprising at least one resistor that discharges a load coupled with the output. In some embodiments, the resistive output stage may be configured to discharge over about 1 kilowatt of average power during each pulse cycle. In some embodiments, the output can produce a high voltage pulse having a voltage greater than 1 kV and with frequencies greater than 10 kHz with a pulse fall time less than about 400 ns.

Abstract: The heater component (1) has a substrate part (2), and a thin coating heater (4) which is equipped outside this substrate part (2) and generates heat by power supply. The thin coating heater (4) is formed of a thermal sprayed coating. The thin coating heater (4) has a heater body (10) and a heater extension part (11). The heater body (10) is arranged on a first end face (2a) of the substrate part (2). The heater extension part (11) is extended from the heater body (10) to a second end face (2b) of the substrate part (2) through a side surface (2c) of the substrate part (2). A tip part (11s) of the heater extension part (11) is a heater power supplying part (12) for supplying electric power to the heater body (10).

Abstract: In an inductively coupled plasma-mass spectrometry (ICP-MS) system, ions are transmitted into a collision/reaction cell. A DC potential is applied at an exit of the cell at a first magnitude to generate a DC potential barrier effective to prevent the ions from exiting the cell. The DC potential barrier is maintained during a confinement period to perform an interaction. After the confinement period, analyte ions or product ions are transmitted to a mass spectrometer by switching the exit DC potential to a second magnitude effective to allow the analyte ions or product ions to pass through the cell exit as a pulse. The analyte ions or product ions are then counted during a measurement period. The interaction may be ion-molecule reactions or ion-molecule collisions.

Abstract: An ion funnel fabricated from at least three faces that are each formed from a printed circuit board is described. In one aspect the faces are arranged edge to edge and there is provided a set of guard rails proximal to the edges to bias ions away from the edges. In another aspect slots are provided within the circuit board to facilitate an escape of gases from within the funnel.

Abstract: The invention generally relates to apparatuses for focusing ions at or above ambient pressure and methods of use thereof. In certain embodiments, the invention provides an apparatus for focusing ions that includes an electrode having a cavity, at least one inlet within the electrode configured to operatively couple with an ionization source, such that discharge generated by the ionization source is injected into the cavity of the electrode, and an outlet. The cavity in the electrode is shaped such that upon application of voltage to the electrode, ions within the cavity are focused and directed to the outlet, which is positioned such that a proximal end of the outlet receives the focused ions and a distal end of the outlet is open to ambient pressure.

Abstract: An ionizer includes a probe having multiple coaxially aligned conduits. The conduits may carry liquids, and nebulizing and heating gases at various flow rates and temperatures, for generation of ions from a liquid source. An outermost conduit defines an entrainment region that transports and entrains ions in a gas for a defined distance along the length of the conduits. In embodiments, various voltages may be applied to the multiple conduits to aid in ionization and to guide ions. Depending on the voltages applied to the multiple conduits and electrodes, the ionizer can act as an electrospray, APCI, or APPI source. Further, the ionizer may include a source of photons or a source of corona ionization. Formed ions may be provided to a downstream mass analyser.

Abstract: An extreme ultraviolet light source apparatus includes a disc-shaped cathode rotating about an axis, a disc-shaped anode rotating about an axis, an energy beam irradiation device irradiating a plasma raw material on the cathode with an energy beam to vaporize the plasma raw material, a power supply for causing a discharge between the cathode and the anode for generating a plasma in the gap between the cathode and the anode to emit extreme ultraviolet light, and an irradiation position adjusting mechanism for adjusting a position at which the cathode is irradiated with the energy beam. The cathode, the anode, and the irradiation position adjusting mechanism are accommodated in a housing. A photography device is disposed outside the housing and is configured to photograph a visible-light image of a vicinity of the cathode and the anode, the vicinity including visible light emitted from the plasma.

Abstract: In one aspect, the invention is formulations comprising both organoaminohafnium and organoaminosilane precursors that allows anchoring both silicon-containing fragments and hafnium-containing fragments onto a given surface having hydroxyl groups to deposit silicon doped hafnium oxide having a silicon doping level ranging from 0.5 to 8 mol %, preferably 2 to 6 mol %, most preferably 3 to 5 mol %, suitable as ferroelectric material. In another aspect, the invention is methods and systems for depositing the silicon doped hafnium oxide films using the formulations.

Abstract: A technique for obtaining good film quality in forming a silicon-oxide-containing insulating film as a coating film on a substrate. A coating liquid containing polysilazane is applied to a wafer, a solvent in the coating liquid is volatilized, and then the coating film is irradiated with ultraviolet rays under a nitrogen atmosphere before performing a curing process. Thus, dangling bonds are likely to be formed at hydrolyzed portions in polysilazane. Since dangling bonds are formed in advance at portions in silicon to be hydrolyzed, productivity of hydroxyl groups is enhanced. That is, since an energy required for hydrolysis is reduced, the number of the portions remaining without being hydrolyzed is reduced even when the curing process is performed at a low temperature. Therefore, dehydration synthesis occurs efficiently, which increases a crosslinking rate and makes it possible to form a dense (good film quality) insulating film.

Abstract: A perovskite material that has a perovskite crystal lattice having a formula of CxMyXz, where x, y, and z, are real numbers, and 1,4-diammonium butane cation cations disposed within or at a surface of the perovskite crystal lattice. C comprises one or more cations selected from the group consisting of Group 1 metals, Group 2 metals, ammonium, formamidinium, guanidinium, and ethene tetramine. M comprises one or more metals each selected from the group consisting of Be, Mg, Ca, Sr, Ba, Fe, Cd, Co, Ni, Cu, Ag, Au, Hg, Sn, Ge, Ga, Pb, In, Tl, Sb, Bi, Ti, Zn, Cd, Hg, and Zr and combinations thereof. X comprises one or more anions each selected from the group consisting of halides, sulfides, selenides, and combinations thereof.

Abstract: Methods of depositing a film using a plasma enhanced process are described. The method comprises providing continuous power from a power source connected to a microwave plasma source in a process chamber and a dummy load, the continuous power split into pulses having a first time and a second time defining a duty cycle of a pulse. The continuous power is directed to the microwave plasma source during the first time, and the continuous power is directed to the dummy load during the second time.

Abstract: A method for making a semiconductor device may include forming a superlattice above a semiconductor layer. The superlattice may include a plurality of stacked groups of layers, with each group of layers including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The method may further include selectively etching the superlattice to remove semiconductor atoms and cause non-semiconductor atoms to accumulate and define an etch stop layer.

Abstract: A method for fabricating a semiconductor structure includes: providing a substrate and a dielectric layer on the substrate; and forming an etching mask on the dielectric layer; and etching the dielectric layer using the etching mask to form at least one opening therein. The etching mask includes: a hard mask layer, a photoresist layer, and a hexamethyldisilazane (HMDS) layer. The photoresist layer is located over the hard mask layer, and the HMDS layer is located between the hard mask layer and the photoresist layer.

Abstract: A method of integrating a first substrate having a first surface with a first insulating material and a first contact structure with a second substrate having a second surface with a second insulating material and a second contact structure. The first insulating material is directly bonded to the second insulating material. A portion of the first substrate is removed to leave a remaining portion. A third substrate having a coefficient of thermal expansion (CTE) substantially the same as a CTE of the first substrate is bonded to the remaining portion. The bonded substrates are heated to facilitate electrical contact between the first and second contact structures. The third substrate is removed after heating to provided a bonded structure with reliable electrical contacts.

Abstract: Disclosed herein are techniques for bonding LED components. According to certain embodiments, a first component including a semiconductor layer stack is hybrid bonded to a second component including a substrate that has a different thermal expansion coefficient than the semiconductor layer stack. The semiconductor layer stack includes an n-side semiconductor layer, an active light emitting layer, and a p-side semiconductor layer. The first component and the second component further include first contacts and second contacts, respectively. To hybrid bond the two components, the first contacts are aligned with the second contacts. Then dielectric bonding is performed to bond respective dielectric materials of both components. The dielectric bonding is followed by metal bonding of the contacts, using annealing.

Abstract: A method of doping a substrate. The method may include providing a substrate in a process chamber. The substrate may include a semiconductor structure, and a dopant layer disposed on a surface of the semiconductor structure. The method may include maintaining the substrate at a first temperature for a first interval, the first temperature corresponding to a vaporization temperature of the dopant layer. The method may further include rapidly cooling the substrate to a second temperature, less than the first temperature, and heating the substrate from the second temperature to a third temperature, greater than the first temperature.

Abstract: Exemplary methods of etching may include flowing a fluorine-containing precursor and a secondary gas into a processing region of a semiconductor processing chamber. The secondary gas may be or include oxygen or nitrogen. A flow rate ratio of the fluorine-containing precursor to the secondary gas may be greater than or about 1:1. The methods may include contacting a substrate with the fluorine-containing precursor and the secondary gas. The substrate may include an exposed metal. The substrate may define a high aspect-ratio structure. The methods may include etching the exposed metal within the high aspect-ratio structure.

Abstract: A substrate processing method includes preparing a substrate including an etching target film and a mask; etching the etching target film through the mask by plasma; and heat-treating the substrate at a preset temperature after the etching of the etching target film.

Abstract: Methods for depositing a dielectric material using RF bias pulses along with remote plasma source deposition for manufacturing semiconductor devices, particularly for filling openings with high aspect ratios in semiconductor applications are provided. For example, a method of depositing a dielectric material includes providing a gas mixture into a processing chamber having a substrate disposed therein, forming a remote plasma in a remote plasma source and delivering the remote plasma to an interior processing region defined in the processing chamber, applying a RF bias power to the processing chamber in pulsed mode, and forming a dielectric material in an opening defined in a material layer disposed on the substrate in the presence of the gas mixture and the remote plasma.

Abstract: In a method, a mask is formed on a microstructure over a substrate. The mask includes a first pattern over a first region of the microstructure and a second pattern over a second region of the microstructure. A first etching process is performed to etch the microstructure by providing an etching gas and applying a first bias voltage to the substrate according to the first and second patterns of the mask. A protective layer is subsequently formed by providing a deposition gas and applying a second bias voltage to the substrate to cover the first pattern of the mask. A second etching process is performed to transfer the second pattern of the mask further into the second region of the microstructure. The deposition gas has a higher carbon to fluorine ratio than the etching gas, and the second bias voltage is smaller than the first bias voltage.

Abstract: A method for locally annealing and crystallizing a thin film by directing ultrashort optical pulses from an ultrafast laser into the film. The ultrashort pulses can selectively produce an annealed pattern and/or activate dopants on the surface or within the film.

Abstract: Methods of manufacturing a system are described. A method includes attaching a silicon backplane to a carrier and molding the silicon backplane on the carrier such that a molding material surrounds side surfaces of the silicon backplane to form a structure comprising a substrate with an embedded silicon backplane. The structure has a first surface opposite the carrier, a second surface adjacent the carrier, and side surfaces. At least one via is formed through the molding material and filled with a metal material. A metal layer is formed on a central region of the first surface of the structure. Redistribution layers are formed on the first surface of the structure adjacent the metal layer.

Abstract: Generally discussed herein are systems, devices, and methods that include an organic high density interconnect structure and techniques for making the same. According to an example a method can include forming one or more low density buildup layers on a core, conductive interconnect material of the one or more low density buildup layers electrically and mechanically connected to conductive interconnect material of the core, forming one or more high density buildup layers on an exposed low density buildup layer of the one or more low density buildup layers, conductive interconnect material of the high density buildup layers electrically and mechanically connected to the conductive interconnect material of the one or more low density buildup layers, and forming another low density buildup layer on and around an exposed high density buildup layer of the one or more high density buildup layers.

Abstract: In order to provide a concentration control apparatus that, without adding any new sensors or the like, makes it possible to accurately estimate a quantity of source consumed inside a vaporization tank, and to perform highly accurate concentration control in accordance with the remaining quantity of source, there is provided a concentration control apparatus that, in a vaporizer that is equipped with at least a vaporization tank containing a liquid or solid source, a carrier gas supply path that supplies a carrier gas to the vaporization tank, and a source gas extraction path along which flows a source gas which is created by vaporizing the source and is then extracted from the vaporization tank, controls a concentration of the source gas and includes a concentration monitor that is provided on the source gas extraction path, and outputs output signals in accordance with a concentration of the source gas.

Abstract: A holding apparatus including a holding substrate having a first main face on one side in a thickness direction thereof, and a heat generation section which is disposed in the holding substrate and generates heat when energized. The heat generation section includes a plurality of first heating elements arrayed in a planar direction orthogonal to the thickness direction of the holding substrate, and a second heating element disposed on a side toward the first main face in the thickness direction with respect to the plurality of first heating elements. Any one of the plurality of first heating elements is electrically connected to the second heating element in series through a first via extending in the thickness direction within the holding substrate.

Abstract: A substrate fixing device includes a baseplate, an insulating layer over the baseplate, and an electrostatic chuck on the insulating layer. The insulating layer includes a heating element and a metal layer. The metal layer has a higher thermal conductivity than the insulating layer and is positioned closer to the electrostatic chuck than the heating element.

Abstract: An apparatus is provided. The apparatus includes a spinner configured to hold a wafer, a nozzle configured to supply a liquid chemical onto an upper surface of the wafer, and a laser module configured to heat the wafer by radiating a laser beam to a lower surface of the wafer while the nozzle supplies the liquid chemical onto the upper surface of the wafer.

Abstract: Systems and methods of securing an integrated circuit assembly includes: arranging a plurality of securing elements within a plurality of orifices fabricated within one or more layer components of a plurality of layer components of an integrated circuit assembly; applying a mechanical compression load against the integrated circuit assembly that uniformly compresses together the plurality of layer components of the integrated circuit assembly; after applying the mechanical compression load to the integrated circuit assembly, fastening the plurality of securing elements while the integrated circuit assembly is in a compressed state based on the mechanical compression load; and terminating the application of the mechanical compression load against the integrated circuit assembly based on the fastening of the plurality of securing elements.

Abstract: A method of making a transfer head for transferring micro elements, wherein the transfer head includes a cavity with a plurality of vacuum paths and a suite having arrayed suction nozzles and vacuum paths. The suction nozzles are connected to the vacuum path components respectively, and the vacuum path components are formed to connect to vacuum paths in the cavity respectively. The suction nozzles attract or release the micro element through vacuum pressure transmitted by vacuum. When the suite is mounted in the cavity, the upper surface of the suite is arranged with optical switching components for controlling the switch of the vacuum path components and vacuum paths of each path so that the suction nozzles can attract or release required micro element through vacuum pressure; and fabricating a suite with an array micro-hole structure, wherein the array micro-hole structure serves as the vacuum path components and the suction nozzles.

Abstract: During electron beam imaging of a semiconductor wafer, the electron beam is adjusted to a first electron dose/nm2/time value below a damage threshold for an image frame grab of a site on the semiconductor wafer. Then the electron beam is adjusted to a second electron dose/nm2/time value different from the first electron dose/nm2/time value for a second image frame grab of the site. The second electron dose/nm2/time value can be above the damage threshold.

Abstract: A storage shelf includes second shelf modules each including a second shelf board, a supply nozzle, an MFC configured to adjust a flow rate of the fluid supplied from the supply nozzle, and a third pipe connecting between the MFC and a main pipe connected to a supply source of the fluid, and suspension frames each including additional shelf supporting portions supporting the second shelf modules from below and a pair of suspending portions and a pair of additional suspending portions suspending and supporting the additional shelf supporting portions. The suspension frames are disposed at regular intervals along one direction. Each second shelf module is laid over between additional shelf supporting portions of suspension frames adjacent to each other in the one direction, and a pipe connector being connectable to the main pipe is provided with an end of the third pipe.