Abstract: There are provided a method for manufacturing a Si(1-v-w-x)CwAlxNv substrate having a reduced number of cracks and high processability, a method for manufacturing an epitaxial wafer, a Si(1-v-w-x)CwAlxNv substrate, and an epitaxial wafer. A method for manufacturing a Si(1-v-w-x)CwAlxNv substrate 10a includes the following steps. First, a Si substrate 11 is prepared. A Si(1-v-w-x)CwAlxNv layer (0<v<1, 0<w<1, 0<x<1, and 0<v+w+x<1) is then grown on the Si substrate at a temperature below 550° C.

Abstract: The present invention relates to a method for growing a novel non-polar (13 40) plane epitaxy layer of wurtzite structure, which comprises the following steps: providing a single crystal oxide with perovskite structure; using a plane of the single crystal oxide as a substrate; and forming a non-polar (13 40) plane epitaxy layer of wurtzite semiconductors on the plane of the single crystal oxide by a vapor deposition process. The present invention also provides an epitaxy layer having non-polar (13 40) plane obtained according to the aforementioned method.

Abstract: The present application discloses the details of a microwave plasma chemical vapor deposition process that uses Nitrogen and Diborane simultaneously in combination along with the Methane and Hydrogen gases to grow white color diamonds. The invention embodies using nitrogen to avoid inclusions and impurities in the CVD diamond samples and Diborane for the color enhancement during the growth of diamond. It is also found that heating of the so grown diamonds to 2000 C results in significant color enhancement due to the compensation of Nitrogen and Boron centers in the samples. The origin of the various colors in diamond is explained on the basis of the band diagram of CVD diamond.

Abstract: In a physical vapor transport growth technique for silicon carbide a silicon carbide powder and a silicon carbide seed crystal are introduced into a physical vapor transport growth system and halosilane gas is introduced separately into the system. The source powder, the halosilane gas, and the seed crystal are heated in a manner that encourages physical vapor transport growth of silicon carbide on the seed crystal, as well as chemical transformations in the gas phase leading to reactions between halogen and chemical elements present in the growth system.

Abstract: The present invention is directed towards methods for growing diamond nanowires via chemical vapor deposition and apparatuses that incorporate these diamond nanowires.

Abstract: A light emitting device has a nanostructured layer with nanovoids. The nanostructured layer can be provided below and adjacent to active region or on a substrate or a template below an n-type layer for the active region, so as to reduce strain between epitaxial layers in the light emitting device. A method of manufacturing the same is provided.

Abstract: A high-quality, large-area seed crystal for ammonothermal GaN growth and method for fabricating. The seed crystal comprises double-side GaN growth on a large-area substrate. The seed crystal is of relatively low defect density and has flat surfaces free of bowing. The seed crystal is useful for producing large-volume, high-quality bulk GaN crystals by ammonothermal growth methods for eventual wafering into large-area GaN substrates for device fabrication.

Abstract: Hydride vapor-phase deposition (HVPE) systems are disclosed. An HVPE hydride vapor-phase deposition system may include a reactant source chamber and a growth chamber containing a susceptor coupled to the reactant source chamber. The reactant source chamber may be configured to create a reactant gas through a chemical reaction between a solid or liquid precursor and a different precursor gas. The reactant source chamber can be configured to operate at a temperature T(M) significantly above room temperature. The reactant gas can be chemically unstable at or near room temperature. The susceptor is configured to receive a substrate and maintain the substrate at a substrate temperature T(S). The growth chamber includes walls can be configured to operate at a temperature T(C) such that T(M), T(S) are greater than T(C).

Abstract: The present invention belongs to the technical field of semiconductor materials and specifically relates to a method for cleaning and passivizing gallium arsenide (GaAs) surface autologous oxide and depositing an Al2O3 dielectric. This method includes: use a new-type of sulfur passivant to react with the autologous oxide on the GaAs surface to clean it and generate a passive sulfide film to separate the GaAs from the outside environment, thus preventing the GaAs from oxidizing again; further cleaning the residuals such as autologous oxides and sulfides on the GaAs surface through the pretreatment reaction of the reaction source trimethyl aluminum (TMA) of the Al2O3 ALD with the GaAs surface, and then deposit high-quality Al2O3 dielectric through ALD as the gate dielectric which fully separates the GaAs from the outside environment. The present invention features a simple process and good effects, and can provide preconditions for manufacturing the GaAs devices.

Abstract: A semiconductor wafer is formed of a substrate wafer of single crystal silicon doped with dopant atoms of the n type or p type, with a front surface and a back surface, contains a layer deposited epitaxially on the front surface of the substrate wafer. The substrate wafer additionally includes an n++ or p++ doped layer, which extends from the front surface of the substrate wafer into the substrate wafer and has a defined thickness. The semiconductor wafer is produced by a process in which dopant atoms of the n type or p type are introduced into the substrate wafer through the front surface of the substrate wafer, the dopant concentration in a layer which extends from the front surface of the substrate wafer into the substrate wafer being increased from the level n+ or p+ to the level n++ or p++, and an epitaxial layer is then deposited on this layer.

Abstract: A method for growing low-dislocation-density material atop a layer of the material with an initially higher dislocation density using a monolayer of spheroidal particles to bend and redirect or directly block vertically propagating threading dislocations, thereby enabling growth and coalescence to form a very-low-dislocation-density surface of the material, and the structures made by this method.

Abstract: A method to grow a boule of silicon carbide is described. The method may include flowing a silicon-containing precursor and a carbon-containing precursor proximate to a heated filament array and forming the silicon carbide boule on a substrate from reactions of the heated silicon-containing and carbon-containing precursors. Also, an apparatus for growing a silicon carbide boule is described. The apparatus may include a deposition chamber to deposit silicon carbide on a substrate, and a precursor transport system for introducing silicon-containing and carbon-containing precursors into the deposition chamber. The apparatus may also include at least one filament or filament segment capable of being heated to a temperature that can activate the precursors, and a substrate pedestal to hold a deposition substrate upon which the silicon carbide boule is grown. The pedestal may be operable to change the distance between the substrate and the filament as the silicon carbide boule is grown.

Abstract: Enhanced corrosion resistance is achieved in a coating by using a germanium-containing precursor and hollow cathode techniques to form a first layer directly on the surface of a workpiece, prior to forming an outer layer, such as a layer of diamond-like carbon (DLC). The use of a germanium or germanium-carbide precursor reduces film stress and enables an increase in the thickness of the subsequently formed DLC. Germanium incorporation also reduces the porosity of the layer. In one embodiment, a cap layer containing germanium is added after the DLC in order to further reduce the susceptibility of the coating to chemical penetration from the top.

Abstract: Methods for formation epitaxial layers containing silicon and carbon doped with phosphorus are disclosed. The pressure is maintained equal to or above 100 torr during deposition. The methods result in the formation of a film including substitutional carbon. Specific embodiments pertain to the formation and treatment of epitaxial layers in semiconductor devices, for example, Metal Oxide Semiconductor Field Effect Transistor (MOSFET) devices.

Abstract: One or more layers are epitaxially grown on a bulk crystalline AlN substrate. The epitaxial layers include a surface which is the initial surface of epitaxial growth of the epitaxial layers. The AlN substrate is substantially removed over a majority of the initial surface of epitaxial growth.

Abstract: Methods for gas delivery to a process chamber are provided herein. In some embodiments, a method may include flowing a process gas through one or more gas conduits, each gas conduit having an inlet and an outlet for facilitating the flow of gas through the gas conduits and into a gas inlet funnel having a second volume, wherein each gas conduit has a first volume less than the second volume, and wherein each gas conduit has a cross-section that increases from a first cross-section proximate the inlet to a second cross-section proximate the outlet but excluding any intersection points between the gas inlet funnel and the gas conduit, and wherein the second cross-section is non-circular; and delivering the process gas to the substrate via the gas inlet funnel.

Abstract: In a manufacturing apparatus for manufacturing an epitaxial wafer with a wafer being mounted substantially concentrically with a susceptor, a center rod is provided to extend in an up-and-down direction on a side of a non-mounting surface of the susceptor so that its upper end is adjacent to the center of the susceptor. With this arrangement, part of radiation light irradiated toward the susceptor is diffusely reflected by the center rod before reaching the central portion of the susceptor, thereby reducing the amount of the radiation light irradiated to the central portion of the susceptor as well as lowering the temperature of the portion. Since the center rod and the susceptor are not in surface contact, the center rod does not take the heat from the susceptor, thereby suppressing the temperature from decreasing locally at the central portion of the susceptor.

Abstract: There is provided a method of vacuum evaporation comprising causing evaporated material (5) from vacuum evaporation source (20) furnished with container (1) with its one side open accommodating organic material (2) to form a film on opposed substrate (7), wherein the vacuum evaporation source has heating element (3) not fixed to the container, and being in contact with the surface of organic material held in the container, and wherein the organic material is evaporated by heating of the heating element only, the evaporated material released through at least one hole (6) or at least one slit made in the heating element.

Abstract: A method of growing a semiconductor epitaxial thin film and a method of fabricating a semiconductor light emitting device using the same are provided. The method of growing a semiconductor epitaxial thin film, includes: disposing a plurality of wafers loaded in a wafer holder in a reaction chamber; and jetting a reactive gas including a chlorine organic metal compound to the wafers through a gas supply unit provided to extend in a direction in which the wafers are loaded, to grow a semiconductor epitaxial thin film on a surface of each of the wafers.

Abstract: A nitride semiconductor single crystal substrate, a manufacturing method thereof and a method for manufacturing a vertical nitride semiconductor device using the same. According to an aspect of the invention, in the nitride semiconductor single crystal substrate, upper and lower regions are divided along a thickness direction, the nitride single crystal substrate having a thickness of at least 100 ?m. Here, the upper region has a doping concentration that is five times or greater than that of the lower region. Preferably, a top surface of the substrate in the upper region has Ga polarity. Also, according to a specific embodiment of the invention, the lower region is intentionally un-doped and the upper region is n-doped. Preferably, each of the upper and lower regions has a doping concentration substantially identical in a thickness direction.

Abstract: A process of producing a diamond thin-film includes implanting dopant into a diamond by an ion implantation technique, forming a protective layer on at least part of the surface of the ion-implanted diamond, and firing the protected ion-implanted diamond at a firing pressure of no less than 3.5 GPa and a firing temperature of no less than 600° C. A process of producing a diamond semiconductor includes implanting dopant into each of two diamonds by an ion implantation technique and superimposing the two ion-implanted diamonds on each other such that at least part of the surfaces of each of the ion-implanted diamonds makes contact with each other, and firing the ion implanted diamonds at a firing pressure of no less than 3.5 GPa and a firing temperature of no less than 600° C.

Abstract: A method for forming a transparent conductive film by atomic layer deposition includes providing more than one kind of oxide precursor which is individually introduced into atomic layer deposition equipment through different sources, wherein the oxide precursors are consecutively introduced into the atomic layer deposition equipment at the same time, so that the oxide precursors are simultaneously present in the atomic layer deposition equipment, to form a uniform mixture of oxide precursors in a single adsorbate layer for settling onto a substrate in the atomic layer deposition equipment. Then, an oxidant is provided to react with the oxide precursors to form a single multi-oxide atomic layer. The above mentioned steps are repeated to form a plurality of multi-oxide atomic layers.

Abstract: A method for making a flat substrate from incremental-width nanorods includes the steps of: providing a base layer, performing a lateral crystal growth process for a plurality of times, and forming a substrate. The base layer has a plurality of nanorods. Each time the lateral crystal growth process is performed, an additive reagent is added at a different concentration to enable lateral crystal growth and thereby increase the width of each nanorod incrementally. The incremental-width nanorods eventually bond with each other to form a substrate. The substrate may go through an annealing process so as to become a flat substrate.

Abstract: The present application relates generally to methods for growth of high quality graphene films. In particular, a method is provided for forming a graphene film using a modified chemical vapor deposition process using an oxygen-containing hydrocarbon liquid precursor. Desirably, the graphene films are a single-layer and have a single grain continuity of at least 1 ?m2.

Abstract: A semiconductor device manufacturing method including: (a) loading into a chamber a substrate having at least an exposed silicon surface and an exposed surface of silicon oxide film or silicon nitride film on a substrate surface; (b) simultaneously supplying at least a first process gas containing silicon and a second process gas for etching into the chamber when the substrate inside the chamber is heated to a predetermined temperature; and (c) supplying into the chamber a third process gas having an etchability higher than the second process gas etchability. Steps (b) and (c) are performed at least once to selectively grow an epitaxial film on the exposed silicon surface of the substrate surface. A temperature of the substrate is maintained at the predetermined temperature from (b) to (c), and the temperature of the substrate is temporarily elevated above the predetermined temperature and then returned to the predetermined temperature in (c).

Abstract: A method and apparatus for forming heterojunction stressor layers is described. A germanium precursor and a metal precursor are provided to a chamber, and an epitaxial layer of germanium-metal alloy formed on the substrate. The metal precursor is typically a metal halide, which may be provided by subliming a solid metal halide or by contacting a pure metal with a halogen gas. The precursors may be provided through a showerhead or through a side entry point, and an exhaust system coupled to the chamber may be separately heated to manage condensation of exhaust components.

Abstract: An optical device, e.g., LED, laser. The device includes a non-polar gallium nitride substrate member having a slightly off-axis non-polar oriented crystalline surface plane. In a specific embodiment, the slightly off-axis non-polar oriented crystalline surface plane is up to about ?0.6 degrees in a c-plane direction, but can be others. In a specific embodiment, the present invention provides a gallium nitride containing epitaxial layer formed overlying the slightly off-axis non-polar oriented crystalline surface plane. In a specific embodiment, the device includes a surface region overlying the gallium nitride epitaxial layer that is substantially free of hillocks.

Abstract: A semiconductor wafer for an epitaxial growth is disclosed comprising: a main face on which a vapor phase epitaxial layer grows; a back face provided on an opposite side of the wafer; a main chamfered part along a circumferential edge where the main face and a side face of the wafer meet; and a back chamfered part along a circumferential edge where the back face and the side face meet is provided. After a CVD layer formation process is conducted to form a layer at least on the back face and the back chamfered part, a machining process is conducted on the main face to remove a CVD layer at least partially formed thereon so as to polish the main face to a mirror finished surface with a maximum height of profile (Rz) not exceeding 0.3 ?m.

Abstract: A method for producing a Group III nitride semiconductor crystal includes a first step of supplying a Group III raw material and a Group V raw material at a V/III ratio of 0 to 1,000 to form and grow a Group III nitride semiconductor on a heated substrate and a second step of vapor-phase-growing a Group III nitride semiconductor crystal on the substrate using a Group III raw material and a nitrogen raw material.

Abstract: “Super-hetero-epitaxial” combinations comprise epitaxial growth of one material on a different material with different crystal structure. Compatible crystal structures may be identified using a “Tri-Unity” system. New bandgap engineering diagrams are provided for each class of combination, based on determination of hybrid lattice constants for the constituent materials in accordance with lattice-matching equations. Using known bandgap figures for previously tested materials, new materials with lattice constants that match desired substrates and have the desired bandgap properties may be formulated by reference to the diagrams and lattice matching equations. In one embodiment, this analysis makes it possible to formulate new super-hetero-epitaxial semiconductor systems, such as systems based on group IV alloys on c-plane LaF3; group IV alloys on c-plane langasite; Group III-V alloys on c-plane langasite; and group II-VI alloys on c-plane sapphire.

Abstract: A production method of a layered body having a single crystal layer including a group III nitride having a composition AlXGaYInZN (wherein, X, Y and Z are rational numbers respectively satisfying 0.9?X?1.0, 0.0?Y?0.1, 0.0?Z?0.1, and X+Y+Z=1.

Abstract: A process for producing a diamond thin-film includes forming a diamond crystal thin-film on a substrate and firing the diamond crystal thin-film at a sufficient temperature under high pressure under which a diamond is stable. A diamond single-crystal substrate having a diamond single-crystal thin-film formed thereon is placed in an ultra-high-pressure and high-temperature firing furnace to anneal the diamond single-crystal thin-film under the conditions of 1200° C. and 6 GPa.

Abstract: A silicon carbide single crystal wafer wherein a substrate is cut out at an OFF angle from a (0001) c plane of an ?-type silicon carbide single crystal of less than 2° and in an OFF direction in which a deviation from a (11-20) direction is less than 10°, the number of substantially triangular lamination defects exposed from a surface of a wafer which is epitaxial grown on the substrate is less than 4/cm2 over the entire surface of the wafer. The invention provides a producing method of a silicon carbide single crystal wafer capable of enhancing the utility ratio of the bulk silicon carbide single crystal, the element characteristics and the cleavage, as well as a silicon carbide single crystal wafer obtained by such a producing method.

Abstract: Direct resistive heating is used to grow nanotubes out of carbon and other materials. A growth-initiated array of nanotubes is provided using a CVD or ion implantation process. These processes use indirect heating to heat the catalysts to initiate growth. Once growth is initiated, an electrical source is connected between the substrate and a plate above the nanotubes to source electrical current through and resistively heat the nanotubes and their catalysts. A material source supplies the heated catalysts with carbon or another material to continue growth of the array of nanotubes. Once direct heating has commenced, the source of indirect heating can be removed or at least reduced. Because direct resistive heating is more efficient than indirect heating the total power consumption is reduced significantly.

Abstract: A method for producing a silicon carbide layer on a surface of a silicon substrate includes the step of irradiating the surface of the silicon substrate heated in a high vacuum at a temperature in a range of from 500° C. to 1050° C. with a hydrocarbon-based gas as well as an electron beam to form a cubic silicon carbide layer on the silicon substrate surface.

Abstract: A method of forming an epitaxially grown layer, preferably by providing a region of weakness in a support substrate and transferring a nucleation portion to the support substrate by bonding. A remainder portion of the support substrate is detached at the region of weakness and an epitaxial layer is grown on the nucleation portion. The remainder portion is separated or otherwise removed from the support portion.

Abstract: A method for making a flat substrate from incremental-width nanorods includes the steps of: providing a base layer, performing a lateral crystal growth process for a plurality of times, and forming a substrate. The base layer has a plurality of nanorods. Each time the lateral crystal growth process is performed, an additive reagent is added at a different concentration to enable lateral crystal growth and thereby increase the width of each nanorod incrementally. The incremental-width nanorods eventually bond with each other to form a substrate. The substrate may go through an annealing process so as to become a flat substrate.

Abstract: A semiconductor structure that is to be heated. The structure includes a substrate for the front face deposition of a useful layer intended to receive components for electronics, optics or optoelectronics. The structure contains doped elements that absorb infrared radiation so as to substantially increase infrared absorption by the structure so that the front face reaches a given temperature when a given infrared power is supplied to the structure. At least one part of the doped elements have insufficient electrical activity or localization in the structure, such that they cannot disturb the operation of the components. In addition, a method of producing this structure and a method of forming a useful layer of semiconductor material on the structure.

Abstract: A layer deposition apparatus and method is provided. The layer deposition method comprises a load-lock chamber in which a substrate is loaded, a transfer chamber having a transfer robot that transfers the substrate, a reaction chamber that receives the substrate from the transfer robot and grows at least one epitaxial layer on the substrate, a process-separation reaction chamber that receives the substrate and forms at least one epitaxial layer on the substrate, and a gas distributor that supplies a processing gas to the reaction chamber and the process-separation reaction chamber.

Abstract: remove impurities from an exposed surface in the ultrahigh vacuum environment. A high qualify single crystalline or polycrystalline silicon carbide film can be grown directly on the sapphire substrate by chemical vapor deposition employing a silicon-containing reactant and a carbon-containing reactant. Formation of single crystalline silicon carbide has been verified by x-ray diffraction, secondary ion mass spectroscopy, and transmission electron microscopy.

Abstract: A method for manufacturing a group III nitride crystal includes a step of mixing a group III source material and ammonia in a reactor including quartz, and growing a group III nitride crystal on a support substrate by a vapor deposition. The group III source material is an organic metal source material containing Al. The organic metal source material is mixed with a hydrogen halide gas and the mixture of the organic metal source material and the hydrogen halide gas is supplied to the reactor.

Abstract: A method of reducing threading dislocation densities in non-polar such as a-{11-20} plane and m-{1-100} plane or semi-polar such as {10-1n} plane III-Nitrides by employing lateral epitaxial overgrowth from sidewalls of etched template material through a patterned mask. The method includes depositing a patterned mask on a template material such as a non-polar or semi polar GaN template, etching the template material down to various depths through openings in the mask, and growing non-polar or semi-polar III-Nitride by coalescing laterally from the tops of the sidewalls before the vertically growing material from the trench bottoms reaches the tops of the sidewalls. The coalesced features grow through the openings of the mask, and grow laterally over the dielectric mask until a fully coalesced continuous film is achieved.

Abstract: High productivity thin film deposition methods and tools are provided wherein a thin film semiconductor material layer with a thickness in the range of less than 1 micron to 100 microns is deposited on a plurality of wafers in a reactor. The wafers are loaded on a batch susceptor and the batch susceptor is positioned in the reactor such that a tapered gas flow space is created between the susceptor and an interior wall of the reactor. Reactant gas is then directed into the tapered gas space and over each wafer thereby improving deposition uniformity across each wafer and from wafer to wafer.

Abstract: A semiconductor epitaxial substrate includes: a single crystal substrate; an AlN layer epitaxially grown on the single crystal substrate; and a nitride semiconductor layer epitaxially grown on the AlN layer, wherein an interface between the AlN layer and nitride semiconductor layer has a larger roughness than an interface between the single crystal substrate and AlN layer, and a skewness of the upper surface of the AlN layer is positive.

Abstract: A method for growing flat, low defect density, and strain-free thick non-polar III-V nitride materials and devices on any suitable foreign substrates using a fabricated nano-pores and nano-network compliant layer with an HVPE, MOCVD, and integrated HVPE/MOCVD growth process in a manner that minimum growth will occur in the nano-pores is provided. The method produces nano-networks made of the non-polar III-V nitride material and the substrate used to grow it where the network is continuous along the surface of the template, and where the nano-pores can be of any shape.

Abstract: Sterically hindered imidazole ligands are described, along with their synthesis, which are capable of coordinating to Group 2 metals, such as: calcium, magnesium, strontium, in an eta-5 coordination mode which permits the formation of monomeric or dimeric volatile complexes. A compound comprising one or more polysubstituted imidazolate anions coordinated to a metal selected from the group consisting of barium, strontium, magnesium, radium or calcium or mixtures thereof. Alternatively, one anion can be substituted with and a second non-imidazolate anion.

Abstract: Cyclohexasilane is used in chemical vapor deposition methods to deposit epitaxial silicon-containing films over substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. Furthermore, the crystalline Si may be in situ doped to contain relatively high levels of substitutional carbon by carrying out the deposition at a relatively high flow rate using cyclohexasilane as a silicon source and a carbon-containing gas such as dodecalmethylcyclohexasilane or tetramethyldisilane under modified CVD conditions.

Abstract: A novel approach for the growth of high-quality on-axis epitaxial silicon carbide (SiC) films and boules, using the Chemical Vapor Deposition (CVD) technique, is described here. The method includes a method of substrate preparation, which allows for the growth of “on-axis” SiC films, plus an approach giving the opportunity to grow silicon carbide on singular (a small-angle miscut) substrates, using halogenated carbon-containing precursors (carbon tetrachloride, CCl4, or halogenated hydrocarbons, CHCl3, CH2Cl2, or CH3Cl, or similar compounds or chemicals), or introducing other chlorine-containing species, in the gas phase, in the growth chamber. At gas mixtures greater than the critical amount, small clusters of SiC are etched, before they can become stable nuclei. The presence of chlorine and the formation of gas species allow an increased removal rate of these nuclei, in contrast to the growth without the presence of chlorine.

Abstract: Zinc sulfide (ZnS) single crystals and multi-grain ZnS crystals are suitable for many applications. The disclosed method produces ZnS single crystals or multi-grain ZnS crystals. More specifically, ZnS single crystals or multi-grain ZnS crystals of pure or substantially pure hexagonal wurtzite structure with sufficiently high purity and crystalline perfection to be used to fabricate components and devices including but not limited to optical components (useful in the infrared (IR) & visible spectrum range of 0.34-14 ?m), photoluminescence devices, cathode luminescence devices, electroluminescence devices, semiconductor devices, and IR laser gain mediums (in the wave length range of 1-5 ?m).

Abstract: Shaped nanocrystal particles and methods for making shaped nanocrystal particles are disclosed. One embodiment includes a method for forming a branched, nanocrystal particle. It includes (a) forming a core having a first crystal structure in a solution, (b) forming a first arm extending from the core having a second crystal structure in the solution, and (c) forming a second arm extending from the core having the second crystal structure in the solution.