Abstract: A single crystal material is prepared by forming a layer of an amorphous substance over a surface of a substrate of a single crystal having the same chemical composition as that of the amorphous substance, the resulting composite material is heated to epitaxially grow the amorphous layer into a single crystal layer. A composite material for producing such a single crystal material is also disclosed which includes a substrate of a single crystal, and a layer of an amorphous substance having the same chemical composition as that of the substrate, the layer having such a thickness that the layer as a whole can epitaxially grow to make a single crystal layer.

Abstract: The invention relates to the growth of nickel manganese oxide monocrystals having a cubic spinel geometry. Methods of their growth and sensors constructed with same are also described.

Abstract: A method of manufacturing a semiconductor includes the steps of: forming a first semiconductor film on a substrate having an insulating surface; applying an energy to the first semiconductor film to crystallize the first semiconductor film; patterning the first semiconductor film to form a region that forms a seed crystal; etching the seed crystal to selectively leave a predetermined crystal face in the seed crystal; covering the seed crystal to form a second semiconductor film; and applying an energy to the second semiconductor film to conduct a crystal growth from the seed crystal in the second semiconductor film.

Abstract: A single crystal silicon sheet is formed from a polycrystalline sheet by melting a relatively small portion of the sheet at an initial location and defining a single crystallographic orientation for the silicon by placing a small silicon seed crystal in contact with the melted silicon at the initial location. The melted portion is then moved from the initial location throughout the sheet to move impurities in the sheet to the edges of the sheet and to extend the crystallographic orientation of the silicon established at the initial location to the whole sheet, inwardly of the edges. The edges containing impurities and any remaining polycrystalline structure are removed to produce a sheet of single crystal silicon. A polycrystalline sheet may be formed by spreading a slurry of a silicon powder, a binder, and solvent on a surface and allowing the solvent to evaporate to form a sheet. The sheet is moistened to cause it to expand and sheer clear of the surface.

Abstract: A method for forming a polycrystalline silicon film includes the steps of: forming at least one step on a surface of an insulating substrate; depositing a first amorphous silicon film on the substrate; annealing the first amorphous silicon film so as to change the first amorphous silicon film into a first polycrystalline silicon film; patterning the first polycrystalline silicon film to form a patterned film at the at least one step of the insulating substrate, the patterned film having at least one side face; depositing a second amorphous silicon film on the insulating substrate so as to cover the patterned film; and annealing the second amorphous silicon film so as to change the second amorphous silicon film into a second polycrystalline silicon film by using the at least one side face of the pattered film as a seed crystal for lateral solid-phase crystallization.

Abstract: A method for forming an optical device includes the steps of providing a first plate having a first face defining a recess, filling the recess with a material which can be crystallized, and covering the first face and the recess with a second plate having a second face, so that the second face is in contact with the first face and the material in the recess is completely enclosed by the first and second plates. The material in the recess is thereby protected from chemical and mechanical damage, as well as evaporation. In addition, the plates can be transparent, allowing the material in the recess to be visually monitored. A grown crystalline film packed in the cell can be used as a non-liner and/or electro-optical device.

Abstract: A method for generating well-crystallized photo- and cathodoluminescent oxide phosphor powders. The method of this invention uses hydrothermal synthesis and annealing to produce nearly monosized (RE.sub.1-x Ln.sub.x)(P.sub.1-y V.sub.y)O.sub.4 (Ln.dbd.Ce.fwdarw.Lu) phosphor grains with crystallite sizes from 0.04 to 5 .mu.m. Such phosphors find application in cathode-ray tube, flat-panel, and projection displays.

Abstract: A process for the preparation of a semiconductor film. The process comprises depositing nanoparticles of a semiconductor material onto a substrate whose surface temperature during nanoparticle deposition thereon is sufficient to cause substantially simultaneous fusion of the nanoparticles to thereby coalesce with each other and effectuate film growth.

Abstract: A bonded substrate and a process for its production is provided to solve the problem involved in the heat treatment which tends to cause troubles such as break, separation and warpage of the substrates bonded. A single-crystal semiconductor epitaxially grown on a porous semiconductor substrate is bonded to an insulator substrate, and the semiconductor substrate is removed by etching, grinding, or a combination of the both, where no heat treatment is carried out or, even if carried out, only once.

Abstract: Hemispherical grain (HSG) silicon for a semiconductor device, is formed by: introducing a crystallization nucleus into a silicon material; and converting the silicon material into the HSG silicon by promoting the growth of the crystallization nucleus during a high vacuum anneal. An embodiment of the present invention is a semiconductor device having hemispherical grain (HSG) silicon, where the HSG silicon comprises a silicon material converted into the HSG silicon from the growth of at least one implanted crystallization nucleus.

Abstract: A non-magnetic single crystal of Mn--Zn ferrite obtained by a solid phase reaction process including the steps of contacting a seed single crystal ferrite with a polycrystal crystal ferrite and producing the single crystal by growing the single crystal in a direction from the seed single crystal toward the polycrystal under heating. The single crystal of Mn--Zn ferrite has a composition defined by points A, B, C, D and E in a three-phase diagram of Fe.sub.2 O.sub.3 --MnO--ZnO, in which:A: Fe.sub.2 O.sub.3 40 mol %, MnO 10 mol %, ZnO 50 mol %;B: Fe.sub.2 O.sub.3 40 mol %, MnO 35 mol %, ZnO 25 mol %;C: Fe.sub.2 O.sub.3 70 mol %, MnO 5 mol %, ZnO 25 mol %;D: Fe.sub.2 O.sub.3 70 mol %, MnO 2 mol %, ZnO 28 mol %; andE: Fe.sub.2 O.sub.3 48 mol %, MnO 2 mol %, ZnO 50 mol %.

Abstract: A method for developing large area highly oriented polycrystalline ferroelectric thin films using spin-on sol-gel deposition and laser crystallization techniques that allow for precise control of temperature distribution. The present invention improves quality, reliability, performance and cost effective production of ferroelectric non-volatile random access memory (FNVRAM) on thermally sensitive silicon and gallium arsenide semiconductor substrates compatible with very large scale integrated circuit technologies. The method is time effective, as crystallization is performed in three seconds as compared to thirteen hours in a conventional furnace for 1 cm.times.1 cm wafer. In addition, crystallization of the film is further achieved without exposing the underneath device structure to detrimental high temperature annealing conditions.

Abstract: A method of fabricating bulk superconducting material including RBa.sub.2 Cu.sub.3 O.sub.7-.delta. comprising heating compressed powder oxides and/or carbonates of R and Ba and Cu present in mole ratios to form RBa.sub.2 Cu.sub.3 O.sub.7-.delta. in physical contact with an oxide single crystal seed to a temperature sufficient to form a liquid phase in the RBa.sub.2 Cu.sub.3 O.sub.7-.delta. while maintaining the single crystal seed solid to grow the superconducting material and thereafter cooling to provide a material including RBa.sub.2 Cu.sub.3 O.sub.7-.delta.. R is a rare earth or Y or La and the single crystal seed has a lattice mismatch with RBa.sub.2 Cu.sub.3 O.sub.7-.delta. of less than about 2% at the growth temperature. The starting material may be such that the final product contains a minor amount of R.sub.2 BaCuO.sub.5.

Abstract: In a method for manufacturing a thin film of metal-oxide dielectric, a precursor solution in a sol state is synthesized in a first step. This precursor solution is composed of component elements of materials of the composite metal-oxide dielectric to be manufactured. In a second step, this precursor solution is made a thin film by spin coating. In a third step, this thin film in the sol state is dried to convert it into a thin film of dry gel. Thereafter, in a fourth step, the thin film of dry gel is subjected to a heat treatment for thermally decomposing and removing organic substances in the dry gel thin film and simultaneously crystallizing this gel state thin film.

Abstract: A material for use in a 1.5 .mu.m wide-band optical isolator, includes a bismuth-substituted terbium-iron garnet single crystal having a composition of Bi.sub.x Tb.sub.3-x Fe.sub.5 O.sub.12 in which x is 0.35 to 0.45. This bismuth-substituted terbium-iron garnet single crystal is grown by a solid phase reaction. A process for producing such a material is also disclosed.

Abstract: A method of producing sheets of crystalline material is disclosed, as well as devices employing such sheets. In the method, a growth mask is formed upon a substrate and crystalline material is grown at areas of the substrate exposed through the mask and laterally over the surface of the mask to form a sheet of crystalline material. This sheet is optionally separated so that the substrate can be reused. The method has particular importance in forming sheets of crystalline semiconductor material for use in solid state devices.

Abstract: A solid step process for convening a polycrystalline body to a single crystal body includes the steps of forming a selected surface topography on the body and then heating the body at a temperature below its melting temperature for a time sufficient to substantially convert the polycrystalline material to single crystal material. The surface topography includes depressions or protrusions from the body having sidewalls of the polycrystalline material that are disposed to intersect one another at junctions forming relatively sharp corners, and the dimensions of the sidewalls are greater than the average grain size of the polycrystalline material. Typically alumina is the polycrystalline material and surface features include grooves or the like. The patterned alumina body with the selected surface topography is heated to a temperature between 1800.degree. and 2000.degree. C. in one or more cycles to convert the polycrystalline alumina to sapphire.

Abstract: Polycrystalline silicon thin-films having a large grain size are formed by preparing a substrate of amorphous surface comprising first regions containing tin atoms at a higher content and second regions containing tin atoms at a lower content or not substantially containing them, and then heat-treating the substrate to grow crystal grains from crystal nuclei formed only in the first regions.

Abstract: Diamond materials are formed by sandwiching a carbon-containing material in a gap between two electrodes. A high-amperage electric current is applied between the two electrode plates so as cause rapid-heating of the carbon-containing material. The current is sufficient to cause heating of the carbon-containing material at a rate of at least approximately 5,000.degree. C./sec, and need only be applied for a fraction of a second to elevate the temperature of the carbon-containing material at least approximately 1000.degree. C. Upon terminating the current, the carbon-containing material is subjected to rapid-quenching (cooling). This may take the form of placing one or more of the electrodes in contact with a heat sink, such as a large steel table. The carbon-containing material may be rapidly-heated and rapidly-quenched (RHRQ) repeatedly (e.g., in cycles), until a diamond material is fabricated from the carbon-containing material.

Abstract: A process for producing high-purity silicon for solar cells continuously directly from inexpensive silicon containing a comparatively large amount of impurities. This process comprises melting continuously supplied raw material silicon in a bottomless crucible placed in an induction coil, while blowing a hot plasma gas incorporated with an oxygen-containing substance on the surface of the melt for purification, and continuously discharging the solidified silicon downward from said bottomless crucible, with at least an axial part of said bottomless crucible being divided into a plurality of electrically conductive pieces spaced circumferentially.

Abstract: A solid state method of converting a polycrystalline ceramic body to a single crystal body includes the steps of doping the polycrystalline ceramic material with a conversion-enhancing dopant and then heating the polycrystalline body at a selected temperature for a selected time sufficient to convert the polycrystalline body to a single crystal. The selected temperature is less than the melting temperature of the polycrystalline material and greater than about one-half the melting temperature of the material. In the conversion of polycrystalline alumina to single crystal alumina (sapphire), examples of conversion-enhancing dopants include cations having a +3 valence, such as chromium, gallium, and titanium.

Abstract: A method for producing a perovskite composition from a precursor composition wherein the precursor composition is irradiated with microwaves to heat the precursor composition and convert the precursor composition to perovskite. A susceptor crucible for use in processing a perovskite precursor composition. The susceptor crucible has an inner crucible, an outer crucible surrounding said inner crucible, and a susceptor material positioned between and separating the inner and outer crucibles.

Abstract: A solid state process for the bulk conversion of a dense polycrystalline ceramic body to a single crystal body has been accomplished by heating the polycrystalline material to a temperature above one-half of the melting temperature of the material but below the melting point of the material. As the process is a solid state process, no melting of the ceramic body is necessary to convert it to a single crystal. The process has been used to convert a dense polycrystalline alumina body (PCA) containing less than 100 wppm of magnesia to sapphire (single crystal alumina) by heating the PCA to temperatures above 1100.degree. C. but below 2050.degree. C., the melting point of alumina.

Abstract: A crystal article comprises a substrate having an insulating amorphous surface and monocrystal formed on the substrate. The monocrystal is formed by providing a primary seed in the form of a film with an area 100 .mu.m.sup.2 or less arranged in a desired pattern on the surface of the substrate acting as a non-nucleation surface with a small nucleation density, then subjecting the primary seed to thermal treatment to convert it to a monocrystalline seed, and subsequently subjecting the monocrystalline seed to crystal growth treatment to allow a monocrystal to grow beyond the monocrystalline seed and cover the non-nucleation surface.

Abstract: A lower capacitor electrode is formed on the basic plate 1, and thereafter a ferroelectric film, for example, a PZT film having the Pb is formed. ITO, RuO2, SnO2 which are Pt or oxide conductive material are formed as a cap layer into 200 .ANG. or more in film thickness by a sputtering method or silicone oxide film or the like are formed with 200A or more in film thickness by a thermal CVD method. Thereafter, a thermal operating operation is effected. By the prevention of the Pb from being evaporated at the thermal processing time, the elaborate ferroelectric film of stoichiometrical perovskite construction can be formed.

Abstract: A method of manufacturing semiconductor particles (30) of uniform mass. A template (12) is used to meter out uniform mass piles (28) of semiconductor feedstock upon a refractory layer (14). These piles (28) of semiconductor feedstock are then melted briefly to obtain semiconductor particles (30) of uniform mass. Silica is the preferred refractory layer, and is separated from the particles after the melt procedure. Subsequent melt procedures can be implemented to ultimately obtain perfect spheres of the semiconductor material. The present invention is well suited for forming semiconductor spheres to be implemented in photovoltaic solar cells. Semiconductor grade or metallurgical grade feedstock can be implemented to obtain particles of high purity. High yields of uniformly massed spheres can be obtained to produce high efficiency photovoltaic cells at a moderate cost.

Abstract: Films of hexagonal boron nitride are converted to a highly desirable cubic-like phase of boron nitride. The transformation is achieved by annealing the hBN material at temperatures below 1000.degree. C. The conversion may be conducted in a hydrogen, nitrogen, ammonia, vacuum, or inert gas containing atmosphere.

Abstract: Beta-silicon carbide whiskers of superior uniformity can be formed, either singly or in-situ in a matrix, by heating a source for silicon with a source of carbon (greater than 0 percent but less than or equal to about 60 percent of stoichiometric, with respect to the silicon source) in the presence of a titanium-containing catalyst, such as titanocene dichloride. Advantageously, the titanium catalyst can be applied by drying a solution of the titanium catalyst on the carbon and silicon sources. The titanium, carbon and silicon sources are then heated together, preferably to between about 1800.degree. C. and about 1850.degree. C., resulting in a product containing high quality beta-silicon carbide whiskers.

Abstract: An object of this invention is to provide a semiconductor element manufacturing method in which, in forming a polycrystal semiconductor layer by applying ultraviolet rays to an amorphous semiconductor layer formed on a large substrate, an excimer laser employed in the conventional art is used in such a manner that the layer is made uniform in crystallinity, thereby to manufacture a polycrystal semiconductor layer high in quality.

Abstract: A method for producing oriented, intermetallic, thin film structures having uniaxial magnetic, electronic, optical, and mechanical properties. Artificial superlattices (10) are assembled by sputter deposition of alternating layers of the component metals of the target intermetallic compound on an aligned substrate (16). Either single crystal substrates or crystallographically textured substrates may be used to induce alignment of the deposited layers (10, 12) in the method of the present invention. Annealing of the resulting superlattice (10) generates aligned, thin film intermetallic compounds (38) of the component metals at the interfaces (44) of the superlattice (10), the thin film intermetallic compounds having pronounced, uniaxial properties.

Abstract: A method for growth of a crystal wherein a monocrystalline seed is arranged on a substrate and a monocrystal is permitted to grow with the seed as the originating point, comprises the step of:(1) providing a substrate having a surface of smaller nucleation density;(2) arranging on the surface of the substrate primary seeds having sufficiently fine surface area to be agglomerated;(3) applying heat treatment to the primary seeds to cause agglomeration to occur, thereby forming a monocrystalline seed with a controlled face orientation; and(4) applying crystal growth treatment to permit a monocrystal to grow with the monocrystalline seed as the originating point.

Abstract: A process for crystallizing an amorphous semiconductor by irradiating a laser beam thereto, which comprises thermally annealing the amorphous semiconductor prior to the crystallization thereof in vacuum or in an inactive gas atmosphere at a temperature not higher than the crystallization temperature of the amorphous semiconductor, and then irradiating a laser beam to the thermally annealed amorphous semiconductor in vacuum or in an inactive gas atmosphere to crystallize the amorphous semiconductor. The process provides a uniform polycrystalline silicon film having high crystallinity, which has less dependence on the energy density of the laser beam which is irradiated thereto for crystallization, and hence useful for thin film devices such as insulated gate field effect transistors.