Abstract: Prior to transfer of an wafer W, a mixed gas is being generated and exhausted, thereby fluctuation of concentration and temperature of a solvent component at the beginning of gas introduction into a chamber 3 is suppressed. A step of gelling after the wafer W is carried into an aging unit is divided into several steps. Until a temperature of the wafer W reaches a predetermined treatment temperature, an average concentration of the solvent component in a mixed gas is gradually raised relative to the temperature of the wafer W. Thereby, immediately after the wafer W is transferred into a sealed chamber, the gas of the solvent component is prevented from condensing.

Abstract: A method and apparatus for continuously coating moving web and splices with a coating fluid. The system includes a slide coating die having a slide surface with at least one feed slot for extruding the coating fluid onto the moving web. The slide coating die defines a coating gap with the moving web. The coating gap is adjustable between a coating position and a splice coating position. A web guide is positioned to guide the moving web in a first direction past the slide coating die such that a coating bead of the coating fluid can be formed in the coating gap. A vacuum system is positioned to generate a reduced pressure condition along a lower surface of the slide coating die. The vacuum system defines a vacuum gap with the moving web. The vacuum gap is adjustable independent of the coating gap between a coating position and a splice coating position. A detector signals an increase in web thickness. A controller is functionally connected to the detector.

Abstract: A method and apparatus can provide surface protection of substrates such as semiconductor wafers while they are being transported from one unit process to another unit process. The method comprises coating at least a part of a surface of the substrate with a coagulated film such as an ice film.

Abstract: A coating processing apparatus is structured by a rotating cup having an opening portion on the top thereof for housing a substrate, a spin chuck for rotating the substrate in the rotating cup, a lid body having an opening and attached to the rotating cup, a resist solution discharge nozzle for discharging a resist solution onto the substrate through the opening of the lid body, a small lid for blocking up the opening of the lid body, and a protrusion member provided on the underneath surface of the small lid to be positioned inside the rotating cup when the small lid is attached into the opening of the lid body. Thus, adjustment of a film thickness of a coating film after a coating solution is coated can be effectively performed.

Abstract: Bowing of semiconductor wafers during heating is reduced by heating the wafers in a gas with a thermal conductivity and mean free path greater than that of oxygen, or by heating the wafers in a processing chamber under a pressure less than 0.1 Torr. In one embodiment, the high thermal conductivity gas is helium and heating in the helium takes place at a pressure less than 2.4 Torr.

Abstract: The present invention is a substrate inverting apparatus mounted to a substrate-coating machine. The apparatus is used for inverting a substrate within a vacuum chamber. The apparatus includes a substrate holding means for holding the substrate substantially rigidly relative to the substrate holding means. The apparatus further includes an actuating means mounted to the substrate-coating machine for inverting the substrate holding means.

Abstract: A curing module for use in fabricating semiconductor wafers is provided. The cure module comprises a housing and a bottom plate. The housing also contains a heating plate adjacent a top surface of the housing and side walls extending from the top surface. The housing sidewalls, the heating plate and the bottom plate define a chamber within the cure module. Films disposed on semiconductor wafers are cured within the chamber by being raised on lift pins to the heating plate during a heating operation and then lowered on the lift pins to the bottom plate during a cooling operation.

Abstract: In a coating method for forming a film of a coating material on a substrate by supplying the coating material from a coating unit to the substrate held by a stage while the coating unit is moved relative to the stage, the stage includes a substrate-holding section and a peripheral section which has a surface higher than that of the substrate-holding section. The coating method includes the steps of mounting the substrate on the substrate-holding section of the stage; forming the film of the coating material so that the coating covers the substrate and extends to the peripheral section; and removing the coating material remaining in the peripheral section by a coating material removing unit after the substrate provided with the film is dismounted from the stage.

Abstract: Several components are used in combination to effect an apparatus for a spray system, which improves the transfer characteristics and efficiency of polymer applied to the surface of a printing plate. In accordance with this invention, the apparatus comprises: a nozzle for spraying a solid stream of polymer, a circumferential conduit surrounding the polymer spray that carries heated, high-pressure air, which heats, atomizes and improves the transfer efficiency of the polymer, a mixer that allows the mixing of the polymer's constituent reagents immediately prior to the polymer entering the spray nozzle, a fast shut-off valve that allows precision control of the spray nozzle's output, a shroud equipped with vacuum to remove and recycle “overspray”, and a cleaning arm, equipped with a vacuum, that may be activated to clean unused polymer from the components of the nozzle, and to prime the spray nozzle with fresh polymer.

Abstract: An improved reactor to facilitate new precursor chemistries and transport polymerization processes that are useful for preparations of low ∈ (dielectric constant) films. An improved TP Reactor that consists of UV source and a fractionation device for chemicals is provided to generate useful reactive intermediates from precursors. The reactor is useful for the deposition system.

Abstract: This invention describes improved apparatus and methods for spin-on deposition of semiconductor thin films. The improved apparatus provides for controlled temperature, pressure and gas compositions within the deposition chamber. The improved methods comprise dispensing of solutions containing thin film precursor via a moveable dispensing device and the careful regulation of the pattern of deposition of the precursor solution onto the wafer. The invention also comprises the careful regulation of deposition variables including dispensation time, wafer rpm, stop time and rates of wafer rotation. In one embodiment, the precursor solution is dispensed from the outer edge of the wafer toward the center. In alternative embodiments, processors regulate the movement of the dispensing arm and the precursor pump to provide an evenly dispensed layer of precursor solution. The invention also describes improved methods for evaporating solvents and curing thin films.

Abstract: A spin chuck for holding a wafer to the front face of which a resist solution is supplied, a cup for housing the spin chuck and forcibly exhausting an atmosphere around the wafer by exhaust from the bottom thereof, and an air flow control plate, provided in the cup to surround the outer periphery of the wafer, for controlling an air flow in the vicinity of the wafer are provided. Accordingly, a state of a special air flow at an outer edge portion of a substrate to be processed can be eliminated, thereby preventing an increase in film thickness at the outer edge portion.

Abstract: A coating apparatus and a coating method are provided capable of adjusting the coating conditions into optimum and producing stabilized coating film continuously. The coating apparatus comprises a backing roll 2; a coating color delivery slit 4; a gas chamber 10, disposed upstream to the coating color delivery slit 4, containing therein a gas injection nozzle 9 and a pressure sensor 7; a gas recovery chamber 14 disposed upstream to the gas chamber; a nozzle group 20 disposed upstream to the gas recovery chamber 14; and a pressure control device for controlling the pressure inside of the gas chamber within a predetermined pressure range based on the detection results of the pressure sensor.

Abstract: A substrate processing apparatus processes a substrate introduced into a chamber under a low pressure. The substrate processing apparatus comprises a vacuum pump for evacuating a chamber and a gas ejection portion provided in the vacuum pump for ejecting a gas toward the substrate. The vacuum pump is disposed in the vicinity of or inside of the chamber. The substrate processing apparatus further comprises a gas introduction path passed through at least a portion of a rotor in the vacuum pump for introducing the gas into the gas ejection portion. The gas ejection portion in the vacuum pump comprises a valve body for closing and opening a suction port provided on a chamber side of the vacuum pump. The vacuum pump has a moving mechanism for vertically moving the valve body.

Abstract: The present invention provides a method and apparatus for dispensing materials onto a substrate. In one embodiment, a dispensing system includes a controller, a vacuum source in electrical communication with the controller, the vacuum source applying a vacuum to at least a portion of the substrate in response to an instruction from the controller, an injector in electrical communication with the controller, the injector comprising a valve in communication with a pressure source and a material port in communication with a material source, the valve permitting material from the material source to be dispensed onto a substrate in accordance with an instruction from the controller. In one embodiment, the dispensing system also includes a trap in communication with the vacuum source, where the trap substantially prevents excessive material dispensed by the injector from contacting the vacuum source.

Abstract: An apparatus and a method for manufacturing a semiconductor device can provide a good quality film growth in a highly clean reaction atmosphere unaffected by contamination from a furnace opening portion. A reverse-diffusion preventing body 8 is provided between a furnace opening flange 7 and a boat susceptor 19 so that a substrate processing space 20 is isolated from a furnace opening portion space 21 to thereby prevent reverse-diffusion of a contaminant which occurs at a furnace opening portion B, to the substrate processing space 20. At a furnace opening flange 7, a furnace opening exhausting tube 15 is provided which constitutes a furnace opening system for exhausting the space 21 independently of the space 20 so that the space 21 is exhausted while being purged by supplying a purge gas into the space 21, to thereby remove a contaminant from the space 21.

Abstract: The present invention is related to the modifying of substrates such as monofilaments, bundles of monofilaments, and fibrous structural material with a modifying agent. The modifying agent is suspended or dissolved in a supercritical fluid, near-critical fluid, superheated fluid, superheated liquid, or a liquified gas and is deposited by rapidly altering the pressure in a chamber to deposit the modifying material onto the substrate.

Abstract: The present invention is directed to a film deposition method, which performs one series of processing from formation of the barrier metal up to and including formation of the metal layer in an environment cut off from air. Specifically, the performing of the barrier metal layer formation in a first device and the metal layer formation in a second device; and the transport of a semiconductor wafer from the first device to the second device is performed through a transport pathway that is cut off from air. As a result, the barrier metal layer that is formed is not affected by, for example, natural oxidation and layer quality is improved.

Abstract: A catalyst composition is applied to an interior of a hollow substrate. The composition is coated on the substrate by immersing the substrate into a vessel containing a bath of coating slurry. A vacuum is then applied to the partially immersed substrate. The intensity of the vacuum and its application time is sufficient to draw the coating slurry upwardly from the bath into each of a plurality of channels located in the interior of the hollow substrate. After removing the substrate from the bath, it is rotated 180°. A blast of pressurized air is applied at an intensity and for a time sufficient to distribute the coating slurry within the channels of the substrate to form a uniform coating profile therein.

Abstract: A powder paint reclamation collector includes an upper chamber for collecting powder paint particles from a paint booth and a lower chamber that receives the particles from the upper chamber. A vacuum line communicates with the lower chamber retrieving the particles from the collector and transferring the particles to a reclamation system. An air chamber receives pressurized air from an air supply and communicates with the lower chamber through a porous plate. Air bleeds through the porous plate into lower and upper chambers for fluidizing the paint particles. The porous plate and an air chamber floor angle downward from the lower chamber towards the vacuum line to improve the flow of fluidized paint particles into the vacuum line.

Abstract: The present invention relates to a processing method for processing a substrate, and comprises a step of coating a coating solution on a surface of the substrate while relatively moving a coating solution discharge nozzle and the substrate and discharging the coating solution from the nozzle onto the substrate. Thereafter, the substrate is exposed to a solvent atmosphere of the coating solution or the pressure is temporarily applied thereto in a container. Thereafter, the pressure inside the container in which the substrate is housed is reduced to dry the coating solution on the substrate. According to the present invention, it is possible to narrow the so-called edge cutting width, which is at a periphery part of the substrate and is not commercialized, and to maintain an in-plane uniformity of the coating film.

Abstract: There provided a powder supply means for supplying a powdery mold releasing agent to a basin and a pressure reduction means for reducing a pressure in a cavity, and in a casting work the powdery mold releasing agent is supplied through a basin into a cavity while reducing a pressure in the cavity.

Abstract: A method of applying a treating liquid to a porous body (11), in particular a pre-baked carbon component of an aluminium production cell, such as an anode block, a cathode block or a sidewall. In this method first the body (11) to be treated is inserted, with its part to be treated facing up, in the treating chamber (12). At least one sealing member (13) is then applied to the body so as to isolate a space (14) in an upper part of the treating chamber (12) around the part of the body to be treated from a lower part (15) of the treating chamber around a bottom part of the body which is not to be treated. Next, treating liquid (10) is supplied to the upper part (14) of the treating chamber to cover the part of the body to be treated with the treating liquid and applying a vacuum to intake an amount of the treating liquid into pores in the part of the body to be treated. Then the body (11) is freed from the sealing member(s) (13), and removed from the treating chamber (12).

Abstract: A method for producing a laminated metal ribbon comprises the steps of (a) vapor-depositing a third metal layer on at least one welding surface of a first metal ribbon 4 and a second metal ribbon 5 in a vacuum chamber 1, the third metal being the same as or different from a metal or an alloy of the first and second metal ribbons 4, 5; (b) pressure-welding the first metal ribbon 4 to the second metal ribbon 5; and (c) subjecting the resultant laminate 9 to a heat treatment for thermal diffusion.

Abstract: An apparatus for application of a chemical process to a workpiece in which movement and precise location of the workpiece within the apparatus is accomplished by means of a single linear actuator and two locator components. A sequence of liquid solutions may be applied to a surface of the workpiece during processing, and a sequence of controlled atmospheres may be provided within a reaction chamber of the apparatus to thereby facilitate implementation of chemical processes that utilize both liquid-phase and gas-phase reactions in concert.

Abstract: An apparatus for applying liquid or pasty application medium, in particular aqueous pigment suspension, to one or both sides of a moving material web, especially to a paper or board web, during its production and/or finishing. The invention provides for the vacuum generating device to be assigned to that side of the material web which faces away from the application medium curtain, at least to the region of incidence of the application medium on the material web.

Abstract: In a coating and developing treatment for a substrate, the present invention comprises the steps of: supplying a coating solution to the substrate to form a coating layer on the substrate; performing a developing treatment for the substrate in the processing zone after it undergoes an exposure processing by an aligner not included in the system; and carrying the substrate into the chamber after the step of forming the coating layer and before the exposure processing and thereafter reducing the pressure inside the airtightly closed chamber to a predetermined pressure to remove impurities adhering to the substrate inside the chamber from the substrate for a predetermined time, wherein the predetermined pressure and the predetermined time are adjusted based on the density of the impurities measured inside the processing zone.

Abstract: A coating head discharges the coating solution in a discharging direction through a slit to a support and is designed such that a slit has a length M (mm) along the discharging direction and a gap G (mm), and a manifold has a coating width L (mm) orthogonal to the discharging direction, a cross sectional area S (mm2) and a circumferential length R (mm) of a cross section, wherein the coating head and the supplying means are arranged such that the coating solution is supplied symmetrically in terms of the center of the coating width of the manifold through the feeding port into the manifold, and dimensions of the coating head are determined to satisfy formula (1): 10−4<(L2R2G3)/(24MS3)<10−2  (1)

Abstract: A process for coating a solid surface (42) with a conditioned liquid composition of substantially uniform thickness is provided. A liquid composition is conditioned by a) degassing either via vacuum or by sparging with a high kinematic viscosity gas; and b) substantially maintaining the viscosity of the liquid composition. The conditioned liquid may then be dispensed onto a solid surface (42) positioned in a sub-atmospheric environment (37) or in a helium-rich environment (37). The solid surface (42) is rotated so that the liquid composition forms a uniformly thick coating free from bubbles on the solid surface (42) and thereby produces a thin film of uniform thickness.

Abstract: A vacuum treatment workpiece support and method for a vacuum treatment apparatus, uses a sun system that is rotatable with respect to the apparatus about a sun system axle. The sun system is coupled to an apparatus-side drive. At least one planet system supported on the sun system, is rotatable about a planet axle and is provided with a driving coupling with respect to the apparatus. At least one moon system is supported on the planet system, and is rotatable about a moon axle with a driving connection to the sun system. A receiver for at least one workpiece is provided on the moon system. The driving connection is established, at least during operation of the apparatus, in an uninterrupted manner, between the sun system and the moon system.

Abstract: Powder overspray that is extracted from a spray booth is recovered back to a powder supply that is used to supply powder to the spray guns inside the spray booth. The powder overspray extracted from the booth is separated from the high flow air stream by a separator such as a cyclone separator. The powder falls into a transfer pan and a vacuum is used to convey the powder from the transfer pan to a vacuum receiver. The powder is then discharged to the feed hopper in the feed center. The use of a vacuum to convey powder from the cyclone to the feed center in effect permits substantially all of the powder overspray to be recovered from the spray booth directly to the feed hopper with minimal dwell or residence time within the cyclone or vacuum receiver subsystems during a spraying operation. The receiver can be rotated for easy cleaning, and the vacuum line cleaned by one or more cleaning elements drawn through the vacuum line.

Abstract: An apparatus and method for drying printing composition on a print medium are disclosed. A method embodiment for use in a printing device includes depositing printing composition onto a print medium and enclosing the print medium in a sealed environment. The method additionally includes reducing a pressure in the sealed environment below an ambient pressure and heating the print medium in the sealed environment to dry the printing composition on the print medium. An apparatus embodiment for use in a printing device having a print engine for depositing printing composition onto a print medium includes an enclosure configured to provide a sealed environment around the print medium. The apparatus additionally includes a vacuum source fluidly coupled to the enclosure and configured to reduce a pressure in the sealed environment below an ambient pressure and a heater configured to apply heat energy to the print medium in the sealed environment to dry the printing composition on the print medium.

Abstract: A workpiece holding device for a vacuum unit has coolable or heatable transfer plates (2) displaceable independently of one another in a baseplate (1) and each comprising a heat transfer surface (3) which is surrounded by an O-ring (4), is connected to a pipe (5) and, with a workpiece (15) which is pressed against the O-ring (4) by a holder (16), encloses a gap (20). The holder (16) can be locked to the baseplate (1). After lowering of the holder (16) into a closed position and load-free locking to the baseplate (1), the heat transfer plates (2) are pneumatically raised until in each case a stop (23, 22) becomes effective between said heat transfer plates and the holder (16) and determines the width of the gap (20). The gap (20) is then filled via the pipe (5) with a heat transfer medium, e.g. helium. After processing of the workpiece (15), the heat transfer plates (2) are lowered and the holder (16) is released again in a loadfree manner.

Abstract: A vacuum exhaust system comprising a vacuum chamber; means for introducing a gas into the vacuum chamber; a main pump for exhausting the vacuum chamber and reducing a pressure of the vacuum chamber to a desired pressure; an auxiliary pump disposed downstream from the main pump; and piping for connecting them, wherein an outer diameter of connecting piping as a connection between the main pump and the auxiliary pump is ½ inch (12.7 mm) or less; and a length of the connecting piping and capability of the auxiliary pump are combined so that a back pressure of the main pump becomes 5 Torr or more. This vacuum exhaust system can realize cost reduction through a saving in entire space, simplification of piping construction work, and so on.

Abstract: A plasma spraying assembly comprising a treatment chamber and a plasma spraying device located in the interior thereof is disclosed that further comprises an assembly for controlling the gas flow in the interior of the treatment chamber. In order to prevent a gas flow in the interior of the treatment chamber that whirls deposits to be created, a deflection device is provided that is located at least partially in the interior of the treatment chamber. Vertically below the treatment chamber, a collecting shaft is located. In the region between the treatment chamber and the collecting shaft, there is provided a basic element comprising baffle members, but leaving open a passage between the treatment chamber and the collecting shaft. In the interior of the collecting shaft, a deflection element is located having essentially conical shape and towering into the passage of the basic element. The collecting shaft is in operative connection with the suction side of a blower and with a vacuum pump.

Abstract: Since a widely applicable high quality plasma display equipped with a phosphor layer suitable as a highly precise plasma display can be produced continuously at a high productivity level, an industrially advantageous method and apparatus for producing a plasma display can be provided. The highly precise plasma display obtained in the present invention can be widely used in the display field, for example, for wall mounted television sets, information displays, etc.

Abstract: Variable mode plasma system and method for processing a semiconductor wafer. The modulation of the plasma potential relative to the semiconductor wafer is varied for different process steps. A capacitive shield may be selectively grounded to vary the level of capacitive coupling and modulation of the plasma. Process pressures, gases and power level may also be modified for different process steps. Plasma properties may easily be tailored to specific layers and materials being processed on the surface of the wafer. Variable mode processes may be adapted for (i) removal of photoresist after high-dose ion implant, (ii) post metal etch polymer removal, (iii) via clean, and (iv) other plasma enhanced processes.

Abstract: A metal organic chemical vapor deposition apparatus comprising a source ampule, a liquid micro-pump, a vaporizer equipped with a solvent supply means, and a reactor. A reactant dissolved in a solvent in the source ampule is transferred to the vaporizer by the liquid micro-pump. A sufficient amount of the solvent is additionally fed to the vaporizer by the solvent supply means, concurrently with the transfer, and vaporized along with the reactants. After being vaporized in the vaporizer, the reactant is injected to the reactor by carrier gas and deposited on a semiconductor substrate to form a high dielectric thin film. By virtue of the additional supplied solvent, the recondensation of the reactant in the vaporizer, which is attributed to the separation of the solvent from the reactant, can be prevented in the vaporizer and in the transfer line between the vaporizer and the reactor.

Abstract: A load-lock mechanism according to the invention comprises a vacuum chamber 31 arranged between a vacuum first transferring chamber 20 and atmospheric second transferring chambers 40. The vacuum chamber 31 has a first opening 31A facing the first transferring chamber 20, a vertical pair of second openings 31B facing the second transferring chambers 40 and open-close mechanisms 34A, 34B to open and close each of the second opening 31B. One vertical pair of load-lock chambers 32, 33 are movably housed in the vacuum chamber 31. The supply-discharge passageways 31G, 31H are provided in the vacuum chamber 31 to supply and discharge air into and out of each of the load-lock chambers 32, 33. Each of the load-lock chamber 32, 33 has a first port 32A, 33A which can communicate with the first opening 31A, a second port 32B, 33B which can communicate with the corresponding second opening 31B.

Abstract: The present invention is a system for performing coating and developing treatment for a substrate, which comprises a treatment section having a coating treatment unit for forming a coating film on the substrate, a developing treatment unit for developing the substrate, a thermal treatment unit for performing thermal treatment for the substrate, and a first carrier unit for carrying the substrate into/out of these coating treatment unit, developing treatment unit, and thermal treatment unit. The system of the present invention further comprises an interface section having a second carrier unit for carrying the substrate through a route at least between the treatment section and an exposure processing unit provided outside the system for performing exposure processing for the substrate.

Abstract: An apparatus for processing a workpiece in a micro-environment includes a workpiece housing connected to a motor for rotation. The workpiece housing forms a substantially closed processing chamber where processing fluids are distributed across at least one face of the workpiece by centrifugal force generated during rotation of the housing. The housing may also be detached from the motor and moved to another location. The housing consequently serves as a processing chamber, as well as a storage or transport chamber.

Abstract: A method, apparatus and system for controlling a rate of pressure change in a vacuum process chamber during pump down and vent up cycles of a vacuum process are provided. The method includes sensing the pressure in the process chamber, and then controlling the rate of pressure change to achieve a desired rate for a particular vacuum process. For a pump down cycle, the apparatus can include a control valve in flow communication with the process chamber and with an evacuation pump. For a vent up cycle, the apparatus can include a control valve in flow communication with the process chamber and with an inert gas supply. With either embodiment controllers can be programmed to adjust positions of the control valves based upon feedback from pressure sensors. The system can include multiple chambers each having an associated pump down and vent up control apparatus configured to match the rates of pressure change between chambers.

Abstract: A method and apparatus for controlling a temperature of a microelectronic substrate. In one embodiment, the apparatus can include a substrate support configured to engage and support the microelectronic substrate. The apparatus can further include a temperature controller having one or more thermal links coupled directly with the substrate when the substrate is supported by the substrate support. The thermal links can maintain thermal contact with the substrate when the substrate is either stationary or mobile relative to the temperature controller. The temperature controller can heat or cool different portions of the substrate at different rates with one or more of several heat transfer devices, including liquid jets, gas jets, resistive electrical elements and/or thermoelectric elements.

Abstract: This invention relates to a system and method for performing accurate coating operations while minimizing contamination of the coating fluid arising from contact between the fluid and the extrusion head. In one embodiment, the extrusion head is composed entirely of non-metallic material, possibly ceramic, thereby minimizing any material removal by the fluid, and any ionic or chemical reaction between the extrusion head material and the fluid. In another embodiment, a shim separating metal parts of an extrusion head is composed of a non-metallic substance to prevent galvanic potential induced corrosion between the shim and the extrusion head material and the resulting release of the products of such corrosion into the coating fluid.

Abstract: A tubular element (100) which is inserted into a liquid-conducting conduit (10) includes an annular chamber (25) that is delimited radially towards the inside by a tubing section (30) made of a material with an elastically flexible surface. The tubular element (100) serves as a flexible damping conduit section, or, if the annular chamber (25) is connected with a partial vacuum chamber at a connector (21), and the tubing section (30) is inflated into the annular chamber (25), as a means for temporarily holding an amount of liquid, for example in order to withdraw a dye bath from the exit slit of an application device for dyeing textile webs.

Abstract: An apparatus for chemical vapor deposition includes a dispenser for dispensing a precursor to a vaporizer positioned within a vaporization chamber. A delivery conduit joins the vaporization with a process chamber. A flow meter is positioned within the delivery conduit for measuring the flow of precursor through the delivery conduit. A flow controller is likewise positioned within the delivery conduit for controlling the flow of precursor in response to the measured flow rate.

Abstract: A method of forming a uniform-thickness good-quality protective film with scratch-proofness and ultraviolet cutting characteristic on a plastic part having a diversified and complex three-dimensional shape without wasteful release of an organic solvent, or the like, into the atmosphere. In a plasma chemical vapor deposition apparatus, the shape of at least one part of a surface of a cathode provided in a reaction chamber is made coincident with the shape of a surface of a plastic part such as a car headlamp lens, or the like. The plastic part is attached to the cathode in the condition that the two surfaces coincident in shape come into contact with each other. High-frequency electric power is supplied between the cathode and the reaction chamber while a hydrogen gas and hexamethyldisilane (HMDS) as a raw material gas for forming a protective film are imported into the reaction chamber. Thus, a protective film is formed on the surface of the plastic part by vapor deposition.

Abstract: An improved gas phase synthesized diamond, CBN, BCN, or CN thin film having a modified region in which strain, defects, color and the like are reduced and/or eliminated. The thin film can be formed on a substrate or be a free-standing thin film from which the substrate has been removed. The thin film can be stably and reproducibly modified to have an oriented polycrystal structure or a single crystal structure. The thin film is modified by being subjected to and heated by microwave irradiation in a controlled atmosphere. The thin film has a modified region in which a line width of the diamond spectrum evaluated by Raman spectroscopy of 0.1 microns or greater is substantially constant along a film thickness direction of the thin film, and the line width of the modified region is 85% or less of a maximum line width of the residual portion of the film thickness.

Abstract: A method and apparatus for loading a substrate is applied to a semiconductor manufacturing apparatus in which a substrate is carried in a vacuum-processing chamber, and loaded on a heated processing table, and further is applied with predetermined processing in a cold-wall processing mode. In the method, for example, the substrate is temporarily stopped before being loaded on the processing table. By the temporal stop, the temperature difference between the substrate and the processing table becomes smaller. When the temperature difference becomes smaller, even if the substrate expands due to heat from the processing table, the degree of the change becomes smaller and therefore it is possible to reduce peeling of films deposited on the substrate-loading surface of the processing table.

Abstract: An inactive gas is introduced into an organic material evaporation source to place a thin organic film material in the organic material evaporation source in an atmosphere having a relatively high pressure, and the temperature of the thin organic film material is increased up to a certain temperature. Then, the organic material evaporation source is evacuated to lower the pressure around the thin organic film material for thereby causing the thin organic film material to emit a vapor. Since no wasteful vapor is emitted from the thin organic film material, the thin organic film material is effectively utilized. Because the inactive gas acts as a heating medium, the temperature of the thin organic film material is increased at a high rate, and the thin organic film material is uniformly heated. When the temperature of the thin organic film material is lowered in an inactive gas atmosphere, it can be lowered at a high rate.